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61. 发明授权

US08350248B2 Memory element and memory device 有权
标题翻译：存储器元件和存储器件
公开(公告)号：US08350248B2
公开(公告)日：2013-01-08
申请号：US12349644
申请日：2009-01-07
申请人： Shuichiro Yasuda , Tomohito Tsushima , Satoshi Sasaki , Katsuhisa Aratani
发明人： Shuichiro Yasuda , Tomohito Tsushima , Satoshi Sasaki , Katsuhisa Aratani
IPC分类号： H01L47/00
CPC分类号： G11C13/02 , G11C2213/11 , G11C2213/56 , G11C2213/79 , H01L27/2436 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/146 , H01L45/1625
摘要： A memory device of a resistance variation type, in which data retaining characteristic at the time of writing is improved, is provided. The memory device includes: a plurality of memory elements in which a memory layer is provided between a first electrode and a second electrode so that data is written or erased in accordance with a variation in electrical characteristics of the memory layer; and pulse applying means applying a voltage pulse or a current pulse selectively to the plurality of memory elements. The memory layer includes an ion source layer including an ionic-conduction material and at least one kind of metallic element, and the ion source layer further contains oxygen.
摘要翻译：提供了一种电阻变化型存储器件，其中写入时的数据保持特性得到改善。存储器件包括：多个存储元件，其中存储层设置在第一电极和第二电极之间，使得根据存储层的电特性的变化来写入或擦除数据; 以及对多个存储元件选择性地施加电压脉冲或电流脉冲的脉冲施加装置。存储层包括离子源层，其包括离子传导材料和至少一种金属元素，离子源层还含有氧。

62. 发明申请

US20120214795A1 FUSED HETEROCYCLIC RING DERIVATIVE AND USE THEREOF 有权
公开(公告)号：US20120214795A1
公开(公告)日：2012-08-23
申请号：US13392051
申请日：2010-08-25
申请人： Hiroshi Banno , Toshio Tanaka , Satoshi Sasaki
发明人： Hiroshi Banno , Toshio Tanaka , Satoshi Sasaki
IPC分类号： A61K31/519 , C07D491/048 , A61K31/5377 , A61P35/00 , A61K31/55 , C07D487/04 , C07D495/04
CPC分类号： C07D487/04 , C07D495/04
摘要： The present invention provides a fused heterocycle derivative having a strong Smo inhibitory activity, and use thereof.Specially, the present invention relates to a compound represented by the formula wherein each symbol is as defined in the specification, or salt thereof, and a medicament containing the compound or a prodrug thereof, which is an Smo inhibitor or an agent for the prophylaxis or treatment of cancer.

63. 发明授权

US08227836B2 Semiconductor device and radio communication device 有权
标题翻译：半导体器件和无线电通信设备
公开(公告)号：US08227836B2
公开(公告)日：2012-07-24
申请号：US12579975
申请日：2009-10-15
申请人： Satoshi Sasaki , Yasunari Umemoto , Yasuo Osone , Tsutomu Kobori , Chushiro Kusano , Isao Ohbu , Kenji Sasaki
发明人： Satoshi Sasaki , Yasunari Umemoto , Yasuo Osone , Tsutomu Kobori , Chushiro Kusano , Isao Ohbu , Kenji Sasaki
IPC分类号： H01L27/082 , H01L27/102
CPC分类号： H01L29/7304 , H01L23/66 , H01L24/48 , H01L24/49 , H01L25/042 , H01L27/0605 , H01L27/067 , H01L28/40 , H01L29/0808 , H01L29/7371 , H01L2223/6627 , H01L2223/6644 , H01L2224/05553 , H01L2224/05554 , H01L2224/32225 , H01L2224/48091 , H01L2224/48095 , H01L2224/48137 , H01L2224/48227 , H01L2224/48235 , H01L2224/49113 , H01L2224/49171 , H01L2224/73265 , H01L2924/00014 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/0102 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/01037 , H01L2924/01041 , H01L2924/01042 , H01L2924/01049 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/10329 , H01L2924/10336 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/1423 , H01L2924/19032 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/30105 , H01L2924/3011 , H01L2924/30111 , H01L2924/00 , H01L2224/45099
摘要： A technology which allows a reduction in the thermal resistance of a semiconductor device and the miniaturization thereof is provided. The semiconductor device has a plurality of unit transistors Q, transistor formation regions 3a, 3b, and 3e each having a first number (e.g., seven) of the unit transistors Q, and transistor formation regions 3c and 3d each having a second number (e.g., four) of the unit transistors Q. The transistor formation regions 3c and 3d are located between the transistor formation regions 3a, 3b, 3e, and 3f, and the first number is larger than the second number.
摘要翻译：提供了允许半导体器件的热阻降低和小型化的技术。半导体器件具有多个单位晶体管Q，每个具有单位晶体管Q的第一数量（例如七个）的晶体管形成区域3a，3b和3e以及每个具有第二数量的晶体管形成区域3c和3d（例如，，四个）单位晶体管Q.晶体管形成区域3c和3d位于晶体管形成区域3a，3b，3e和3f之间，并且第一数量大于第二数量。

64. 发明申请

US20120069631A1 MEMORY ELEMENT AND MEMORY DEVICE 有权
标题翻译：存储元件和存储器件
公开(公告)号：US20120069631A1
公开(公告)日：2012-03-22
申请号：US13303544
申请日：2011-11-23
申请人： Shuichiro Yasuda , Tomohito Tsushima , Satoshi Sasaki , Katsuhisa Aratani
发明人： Shuichiro Yasuda , Tomohito Tsushima , Satoshi Sasaki , Katsuhisa Aratani
IPC分类号： G11C11/00
CPC分类号： G11C13/02 , G11C2213/11 , G11C2213/56 , G11C2213/79 , H01L27/2436 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/146 , H01L45/1625
摘要： A memory device of a resistance variation type, in which data retaining characteristic at the time of writing is improved, is provided. The memory device includes: a plurality of memory elements in which a memory layer is provided between a first electrode and a second electrode so that data is written or erased in accordance with a variation in electrical characteristics of the memory layer; and pulse applying means applying a voltage pulse or a current pulse selectively to the plurality of memory elements. The memory layer includes an ion source layer including an ionic-conduction material and at least one kind of metallic element, and the ion source layer further contains oxygen.
摘要翻译：提供了一种电阻变化型存储器件，其中写入时的数据保持特性得到改善。存储器件包括：多个存储元件，其中存储层设置在第一电极和第二电极之间，使得根据存储层的电特性的变化来写入或擦除数据; 以及对多个存储元件选择性地施加电压脉冲或电流脉冲的脉冲施加装置。存储层包括离子源层，其包括离子传导材料和至少一种金属元素，离子源层还含有氧。

65. 发明授权

US07914355B2 Method of manufacturing display apparatus with SAW touch sensor 失效
标题翻译：使用SAW触摸传感器制造显示装置的方法
公开(公告)号：US07914355B2
公开(公告)日：2011-03-29
申请号：US12278697
申请日：2006-02-08
申请人： Fumihiko Nakazawa , Takashi Katsuki , Yuji Takahashi , Satoshi Sato , Satoshi Sasaki , Tamotsu Watanabe , Kunizo Ogoshi , Michiko Endo
发明人： Fumihiko Nakazawa , Takashi Katsuki , Yuji Takahashi , Satoshi Sato , Satoshi Sasaki , Tamotsu Watanabe , Kunizo Ogoshi , Michiko Endo
IPC分类号： H01J9/24
CPC分类号： G06F3/0436 , G06F3/0412
摘要： First electrodes partially configuring light-emitting elements are patterned in the form of stripes on a first major surface of a transparent substrate. Next, piezoelectric elements functioning a SAW touch sensor are formed on a second major surface of the transparent substrate. Next, the light-emitting elements forming step of forming light-emitting elements on the first electrodes which are patterned in advance is sequentially executed. After the formation of the piezoelectric elements, since the step of forming the light-emitting elements is executed, the light-emitting elements can be prevented from being damaged by receiving heat in the formation of the piezoelectric elements.
摘要翻译：部分地配置发光元件的第一电极在透明衬底的第一主表面上以条纹的形式被图案化。接下来，在透明基板的第二主表面上形成起着SAW触摸传感器的压电元件的作用。接下来，依次执行在预先图案化的第一电极上形成发光元件的发光元件的形成步骤。在形成压电元件之后，由于执行形成发光元件的步骤，可以通过在压电元件的形成中受热来防止发光元件的损坏。

66. 发明申请

US20110031669A1 VIBRATION-DAMPING DEVICE 审中-公开
标题翻译：振动阻尼装置
公开(公告)号：US20110031669A1
公开(公告)日：2011-02-10
申请号：US12918928
申请日：2009-02-27
申请人： Satoshi Sasaki
发明人： Satoshi Sasaki
IPC分类号： F16F15/08 , F16F1/36 , B60G11/22
CPC分类号： F16F1/371
摘要： This vibration-damping device (10) includes: a first main body component (11) that is linked to a vibration receiving portion; a second main body component (12) that is placed on the opposite side from a vibration generating portion so as to sandwich the first main body component (11); a linking component (13) that penetrates through the first main body component (11) and mutually links together the second main body component (12) and the vibration generating portion; main body rubber (14) that elastically links together the first main body component (11) and the second main body component (12) and that has the linking component (13) inserted through its interior space (K); a tubular stopper fitting (15) that is provided on the first main body component (11) and that surrounds from the outward side in the radial direction a rod-shaped contact portion (16) that is provided in the linking component (13); and tubular stopper rubber (17) that is mounted on at least one of an inner surface of the stopper fitting (15) and the contact portion (16). Moreover, distances between mutually facing surfaces formed by internal surfaces of the stopper fitting (15) and the contact portion (16) which are facing each other are uniform over the entire area of each of the facing surface areas. According to this vibration-damping device (10), the load applied to the stopper rubber (17) is reduced, and the durability of the vibration-damping device (10) is improved.
摘要翻译：该减震装置（10）包括：第一主体部件（11），其连接到振动接收部分; 第二主体部件（12），其设置在与振动产生部分相对的一侧，以夹持第一主体部件（11）; 连接部件（13），其穿过第一主体部件（11）并将第二主体部件（12）和振动产生部分相互连接在一起; 主体橡胶（14），其将第一主体部件（11）和第二主体部件（12）弹性连接，并且具有通过其内部空间（K）插入的连接部件（13）; 一个管状止动器配件（15），设置在第一主体部件（11）上并且从径向外侧包围设置在连接部件（13）中的杆状接触部分（16）; 以及安装在止动配件（15）的内表面和接触部分（16）中的至少一个上的管状止动橡胶（17）。而且，由各止动配件（15）的内表面和彼此面对的接触部分（16）形成的彼此相对的表面之间的距离在每个相对表面区域的整个区域上是均匀的。根据该减震装置（10），施加到止动橡胶（17）的负荷减小，并且减振装置（10）的耐久性得到改善。

67. 发明申请

US20110003788A1 FUSED HETEROCYCLIC DERIVATIVE AND USE THEREOF 有权
标题翻译：熔融杂环衍生物及其用途
公开(公告)号：US20110003788A1
公开(公告)日：2011-01-06
申请号：US12919413
申请日：2009-02-25
申请人： Nobuhiro Fujii , Yuya Oguro , Satoshi Sasaki , Shigeru Kondo
发明人： Nobuhiro Fujii , Yuya Oguro , Satoshi Sasaki , Shigeru Kondo
IPC分类号： A61K31/4375 , C07D495/04 , C07D471/04 , C07D491/048 , C07D491/10 , C07D471/14 , A61K31/4365 , A61K31/496 , A61K31/5377 , A61K31/551 , A61K31/437 , A61K31/4355 , A61K31/55 , A61K31/497 , A61K31/541 , A61K31/438 , A61K31/506 , A61P35/00
CPC分类号： C07D471/04 , C07D471/14 , C07D498/04 , C07D513/04
摘要： The present invention provides a compound having a superior Smo inhibitory activity and lower toxicity, which is sufficiently satisfactory as a pharmaceutical product. The present invention provides a compound represented by the formula (I) wherein ring A is 5- to 7-membered ring optionally having substituent(s), where substituents are optionally bonded to each other to form a ring; X is O, S or NR1 (R1 is a hydrogen atom or a hydrocarbon group optionally having substituent(s)); R2 is carbamoyl optionally having substituent(s); and R3 is hydroxy optionally having substituent(s), or a salt thereof.
摘要翻译：本发明提供具有优异的Smo抑制活性和较低毒性的化合物，其作为药物产品足够令人满意。本发明提供由式（I）表示的化合物，其中环A为任选具有取代基的5-至7-元环，其中取代基彼此任选结合形成环; X是O，S或NR1（R1是氢原子或任选具有取代基的烃基）; R2是任选具有取代基的氨基甲酰基; 和R 3是任选具有取代基的羟基，或其盐。

68. 发明申请

US20100254665A1 Semiconductor optical communication module and manufacturing method thereof 有权
标题翻译：半导体光通信模块及其制造方法
公开(公告)号：US20100254665A1
公开(公告)日：2010-10-07
申请号：US12659967
申请日：2010-03-26
申请人： Munechika Kubota , Koji Yamada , Keizou Takemasa , Tomonori Shimamura , Satoshi Sasaki , Xiang Yu , Kouyu Moriya , Takashi Sugiyama
发明人： Munechika Kubota , Koji Yamada , Keizou Takemasa , Tomonori Shimamura , Satoshi Sasaki , Xiang Yu , Kouyu Moriya , Takashi Sugiyama
IPC分类号： G02B6/42 , H01L21/50
CPC分类号： G02B6/4207 , G02B6/12004 , G02B6/4204 , G02B6/4279 , G02B2006/12119 , H01L24/48 , H01L2224/48 , H01L2924/00014 , H01L2924/12043 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01S5/0064 , H01S5/02276 , H01S5/02284 , H01S5/02415 , H01S5/0265 , H01S5/06226 , H01S5/101 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor optical communication module includes a semiconductor chip mounted on a chip carrier and a lens assembly having an end parallel to and facing the front edge of the chip carrier. The semiconductor chip has a front facet oriented at an acute angle to the front edge of the chip carrier. An optical waveguide in the semiconductor chip transmits an optical signal that propagates on an optical axis extending from the front facet of the semiconductor chip to the end of the lens assembly. The optical axis is orthogonal to the end of the lens assembly and the front edge of the chip carrier. The angled mounting of the semiconductor chip on the chip carrier allows the lens assembly to be placed close to the edge of the chip carrier, and to be moved for optical axis adjustment without striking the chip carrier.
摘要翻译：半导体光通信模块包括安装在芯片载体上的半导体芯片和具有平行于并面向芯片载体的前边缘的端部的透镜组件。半导体芯片具有与芯片载体的前边缘成锐角取向的前刻面。半导体芯片中的光波导传输在从半导体芯片的前端面延伸到透镜组件的端部的光轴上传播的光信号。光轴与透镜组件的端部和芯片载体的前边缘正交。半导体芯片在芯片载体上的倾斜安装允许透镜组件靠近芯片载体的边缘放置，并且被移动以进行光轴调整而不会撞击芯片载体。

69. 发明申请

US20090156646A1 PYRIDYLPHENOL COMPOUND AND USE THEREOF 审中-公开
标题翻译：吡啶酚化合物及其用途
公开(公告)号：US20090156646A1
公开(公告)日：2009-06-18
申请号：US12063472
申请日：2006-08-10
申请人： Satoshi Sasaki , Atsuo Baba
发明人： Satoshi Sasaki , Atsuo Baba
IPC分类号： A61K31/44 , C07D213/85 , A61P5/24
CPC分类号： C07D213/85 , C07D213/80 , C07D401/10 , C07D401/12 , C07D401/14 , C07D405/12 , C07D405/14 , C07D409/12 , C07D409/14 , C07D413/12 , C07D413/14 , C07D417/12 , C07D417/14
摘要： The present invention provides a compound which has metastin receptor antagonist activity and is useful for preventing and treating hormone-dependent cancer, benign prostatomegaly, endometriosis, precocious puberty, uterine myoma or the like. More specifically, the present invention provides a compound, represented by the formula: or a salt thereof, a prodrug thereof, and a pharmaceutical agent containing the same; wherein Ring A represents a 5- to 8-membered homocyclic or heterocyclic group optionally having a substituent other than formula —X-R1 wherein X represents a bond or a spacer, and R1 represents optionally substituted amino or an optionally substituted nitrogen-containing heterocyclic group; Ring B represents an optionally substituted benzene ring; R2 represents an optionally substituted homocyclic or heterocyclic group; and R3 and R4 independently represent a hydrogen atom, cyano, acyl or an optionally substituted hydrocarbon group.
摘要翻译：本发明提供了具有转移受体拮抗剂活性的化合物，可用于预防和治疗激素依赖性癌症，良性前列腺肥大，子宫内膜异位症，早熟性青春期，子宫肌瘤等。更具体地，本发明提供由下式表示的化合物或其盐，其前药和含有该化合物的药剂; 其中环A表示任选具有除式-X-R1以外的取代基的5至8元的环状或杂环基，其中X表示键或间隔基，并且R 1表示任选取代的氨基或任选取代的含氮杂环基 ; 环B表示任选取代的苯环; R 2表示任选取代的杂环或杂环基; 并且R 3和R 4独立地表示氢原子，氰基，酰基或任选取代的烃基。

70. 发明授权

US07511315B2 Semiconductor device and manufacturing method therefor 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07511315B2
公开(公告)日：2009-03-31
申请号：US11108729
申请日：2005-04-19
申请人： Satoru Konishi , Tsuneo Endo , Hirokazu Nakajima , Yasunari Umemoto , Satoshi Sasaki , Chushiro Kusano , Yoshinori Imamura , Atsushi Kurokawa
发明人： Satoru Konishi , Tsuneo Endo , Hirokazu Nakajima , Yasunari Umemoto , Satoshi Sasaki , Chushiro Kusano , Yoshinori Imamura , Atsushi Kurokawa
IPC分类号： H01L21/00 , H01L29/34 , H01L23/48 , H01L21/4763
CPC分类号： H01L29/4933 , H01L21/84 , H01L23/4824 , H01L23/49844 , H01L24/48 , H01L24/49 , H01L24/73 , H01L25/16 , H01L29/456 , H01L29/7835 , H01L2224/1403 , H01L2224/16235 , H01L2224/1703 , H01L2224/32145 , H01L2224/48091 , H01L2224/48227 , H01L2224/49171 , H01L2224/49175 , H01L2224/73253 , H01L2224/73265 , H01L2924/00014 , H01L2924/01078 , H01L2924/01079 , H01L2924/1305 , H01L2924/13091 , H01L2924/15153 , H01L2924/1517 , H01L2924/181 , H01L2924/19041 , H01L2924/19105 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device has an external wiring for GND formed over an underside surface of a wiring substrate. A plurality of via holes connecting to the external wiring for GND are formed to penetrate the wiring substrate. A first semiconductor chip of high power consumption, including HBTs, is mounted over a principal surface of the wiring substrate. The emitter bump electrode of the first semiconductor chip is connected in common with emitter electrodes of a plurality of HBTs formed in the first semiconductor chip. The emitter bump electrode is extended in a direction in which the HBTs line up. The first semiconductor chip is mounted over the wiring substrate so that a plurality of the via holes are connected with the emitter bump electrode. A second semiconductor chip lower in heat dissipation value than the first semiconductor chip is mounted over the first semiconductor chip.
摘要翻译：半导体器件具有在布线基板的下表面上形成的用于GND的外部布线。连接到GND的外部配线的多个通孔形成为穿透布线基板。包括HBT的高功率的第一半导体芯片安装在布线基板的主表面上。第一半导体芯片的发射极电极与形成在第一半导体芯片中的多个HBT的发射极共同连接。发射极电极沿HBT排列的方向延伸。第一半导体芯片安装在布线基板上，使得多个通孔与发射极电极连接。散热值比第一半导体芯片低的第二半导体芯片安装在第一半导体芯片上。

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