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61. 发明授权

US08624311B2 Method and structure to reduce dark current in image sensors 有权
标题翻译：降低图像传感器暗电流的方法和结构
公开(公告)号：US08624311B2
公开(公告)日：2014-01-07
申请号：US13238248
申请日：2011-09-21
申请人： Chun-Chieh Chuang , Chih-Min Lin , Ken Wen-Chien Fu , Dun-Nian Yaung
发明人： Chun-Chieh Chuang , Chih-Min Lin , Ken Wen-Chien Fu , Dun-Nian Yaung
IPC分类号： H01L31/113
CPC分类号： H01L27/14689 , H01L27/14603 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14643
摘要： A method to fabricate an image sensor includes providing a semiconductor substrate having a pixel region and a periphery region, forming a light sensing element on the pixel region, and forming at least one transistor in the pixel region and at least one transistor in the periphery region. The step of forming the at least one transistor in the pixel region and periphery region includes forming a gate electrode in the pixel region and periphery region, depositing a dielectric layer over the pixel region and periphery region, partially etching the dielectric layer to form sidewall spacers on the gate electrode and leaving a portion of the dielectric layer overlying the pixel region, and forming source/drain (S/D) regions by ion implantation.
摘要翻译：制造图像传感器的方法包括提供具有像素区域和外围区域的半导体衬底，在像素区域上形成感光元件，以及在像素区域中形成至少一个晶体管和在周边区域中形成至少一个晶体管。在像素区域和外围区域中形成至少一个晶体管的步骤包括在像素区域和外围区域中形成栅电极，在像素区域和外围区域上沉积电介质层，部分蚀刻电介质层以形成侧壁间隔物并且留下覆盖像素区域的电介质层的一部分，以及通过离子注入形成源极/漏极（S / D）区域。

62. 发明申请

US20130307104A1 Image Sensor Structure to Reduce Cross-Talk and Improve Quantum Efficiency 有权
标题翻译：图像传感器结构，以减少交叉和提高量子效率
公开(公告)号：US20130307104A1
公开(公告)日：2013-11-21
申请号：US13476785
申请日：2012-05-21
申请人： Shuang-Ji Tsai , Dun-Nian Yaung , Jen-Cheng Liu , Feng-Chi Hung , Jeng-Shyan Lin , Wen-De Wang
发明人： Shuang-Ji Tsai , Dun-Nian Yaung , Jen-Cheng Liu , Feng-Chi Hung , Jeng-Shyan Lin , Wen-De Wang
IPC分类号： H01L31/0232
CPC分类号： H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/1464
摘要： A semiconductor device includes a substrate including a pixel region incorporating a photodiode, a grid disposed over the substrate and having walls defining a cavity vertically aligned with the pixel region, and a color filter material disposed in the cavity between the walls of the grid.
摘要翻译：半导体器件包括：衬底，其包括并入有光电二极管的像素区域，设置在衬底上的栅格，并且具有限定与像素区域垂直对准的空腔的壁;以及布置在栅格壁之间的空腔中的滤色器材料。

63. 发明授权

US08586404B2 Method for reducing contact resistance of CMOS image sensor 有权
标题翻译：降低CMOS图像传感器接触电阻的方法
公开(公告)号：US08586404B2
公开(公告)日：2013-11-19
申请号：US13556869
申请日：2012-07-24
申请人： Kuan-Chieh Huang , Chih-Jen Wu , Chen-Ming Huang , Dun-Nian Yaung , An-Chun Tu
发明人： Kuan-Chieh Huang , Chih-Jen Wu , Chen-Ming Huang , Dun-Nian Yaung , An-Chun Tu
IPC分类号： H01L21/00
CPC分类号： H01L27/14689 , H01L21/28518
摘要： This description relates to a method for reducing CMOS Image Sensor (CIS) contact resistance, the CIS having a pixel array and a periphery. The method includes performing Physical Vapor Deposition (PVD) at a pixel contact hole area, annealing for silicide formation at the pixel contact hole area and performing contact filling. This description also relates to a method for reducing CMOS Image Sensor (CIS) contact resistance, the CIS having a pixel array and a periphery. The method includes implanting N+ or P+ for pixel contact plugs at a pixel contact hole area, performing Physical Vapor Deposition (PVD) at pixel contact hole area, annealing for silicide formation at the pixel contact hole area, performing contact filling and depositing a first metal film layer, wherein the first metal film layer links contact holes for a source, a drain, or a poly gate of a CMOS device.
摘要翻译：本说明书涉及用于降低CMOS图像传感器（CIS）接触电阻的方法，CIS具有像素阵列和周边。该方法包括在像素接触孔区域进行物理气相沉积（PVD），在像素接触孔区域进行硅化物形成退火并进行接触填充。该描述还涉及用于减小CMOS图像传感器（CIS）接触电阻的方法，CIS具有像素阵列和周边。该方法包括在像素接触孔区域处对像素接触插塞注入N +或P +，在像素接触孔区域进行物理气相沉积（PVD），在像素接触孔区域进行硅化物形成退火，执行接触填充和沉积第一金属膜层，其中所述第一金属膜层连接CMOS器件的源极，漏极或多晶硅栅极的接触孔。

64. 发明申请

US20130020662A1 NOVEL CMOS IMAGE SENSOR STRUCTURE 有权
标题翻译：新型CMOS图像传感器结构
公开(公告)号：US20130020662A1
公开(公告)日：2013-01-24
申请号：US13185204
申请日：2011-07-18
申请人： Min-Feng Kao , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Wen-De Wang
发明人： Min-Feng Kao , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Wen-De Wang
IPC分类号： H01L31/02
CPC分类号： H01L27/146 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14687
摘要： Provided is a method of fabricating an image sensor device. The method includes providing a first substrate having a radiation-sensing region disposed therein. The method includes providing a second substrate having a hydrogen implant layer, the hydrogen implant layer dividing the second substrate into a first portion and a second portion. The method includes bonding the first portion of the second substrate to the first substrate. The method includes after the bonding, removing the second portion of the second substrate. The method includes after the removing, forming one or more microelectronic devices in the first portion of the second substrate. The method includes forming an interconnect structure over the first portion of the second substrate, the interconnect structure containing interconnect features that are electrically coupled to the microelectronic devices.
摘要翻译：提供了一种制造图像传感器装置的方法。该方法包括提供其中设置有辐射感测区域的第一基板。该方法包括提供具有氢注入层的第二衬底，氢注入层将第二衬底分成第一部分和第二部分。该方法包括将第二衬底的第一部分接合到第一衬底。该方法包括在接合之后，去除第二衬底的第二部分。该方法包括在去除之后，在第二衬底的第一部分中形成一个或多个微电子器件。该方法包括在第二基板的第一部分上形成互连结构，所述互连结构包含电耦合到微电子器件的互连特征。

65. 发明申请

US20130001725A1 METHOD OF FABRICATING BACKSIDE-ILLUMINATED IMAGE SENSOR 有权
公开(公告)号：US20130001725A1
公开(公告)日：2013-01-03
申请号：US13542591
申请日：2012-07-05
申请人： Kuan-Chieh Huang , Dun-Nian Yaung , Chih-Jen Wu , Chen-Ming Huang
发明人： Kuan-Chieh Huang , Dun-Nian Yaung , Chih-Jen Wu , Chen-Ming Huang
IPC分类号： H01L27/14
CPC分类号： H01L31/0232 , H01L21/6835 , H01L23/49805 , H01L24/02 , H01L24/05 , H01L24/16 , H01L24/81 , H01L24/85 , H01L27/14618 , H01L27/14621 , H01L27/14627 , H01L27/1464 , H01L27/14645 , H01L27/14687 , H01L27/14689 , H01L31/18 , H01L2221/68327 , H01L2221/68363 , H01L2221/68381 , H01L2224/02313 , H01L2224/0239 , H01L2224/024 , H01L2224/0401 , H01L2224/81191 , H01L2224/81801 , H01L2224/85 , H01L2924/00014 , H01L2924/01019 , H01L2924/01087 , H01L2924/01327 , H01L2924/10253 , H01L2924/12043 , H01L2924/14 , H01L2924/1461 , H05K3/3436 , H05K2201/10151 , H01L2924/01029 , H01L2924/01028 , H01L2924/01022 , H01L2924/00 , H01L2224/48 , H01L2224/45015 , H01L2924/207 , H01L2224/45099
摘要： Provided is a method of fabricating a backside illuminated image sensor that includes providing a device substrate having a frontside and a backside, where pixels are formed at the frontside and an interconnect structure is formed over pixels, forming a re-distribution layer (RDL) over the interconnect structure, bonding a first glass substrate to the RDL, thinning and processing the device substrate from the backside, bonding a second glass substrate to the backside, removing the first glass substrate, and reusing the first glass substrate for fabricating another backside-illuminated image sensor.

66. 发明授权

US08278152B2 Bonding process for CMOS image sensor 有权
标题翻译： CMOS图像传感器的粘合工艺
公开(公告)号：US08278152B2
公开(公告)日：2012-10-02
申请号：US12626296
申请日：2009-11-25
申请人： Jen-Cheng Liu , Dun-Nian Yaung , Chen-Cheng Kuo , Chen-Shien Chen , Shou-Gwo Wuu
发明人： Jen-Cheng Liu , Dun-Nian Yaung , Chen-Cheng Kuo , Chen-Shien Chen , Shou-Gwo Wuu
IPC分类号： H01L21/44
CPC分类号： H01L21/76898 , H01L23/3171 , H01L23/481 , H01L24/12 , H01L27/14618 , H01L27/14683 , H01L2224/05001 , H01L2224/05009 , H01L2224/05548 , H01L2224/0557 , H01L2924/01019 , H01L2924/01068 , H01L2924/01078 , H01L2924/04941 , H01L2924/12043 , H01L2924/13091 , H01L2924/14 , H01L2924/1461 , H01L2924/00
摘要： The present disclosure provides a method of making an integrated circuit (IC). The method includes forming an electric device on a front side of a substrate; forming a top metal pad on the front side of the substrate, the top metal pad being coupled to the electric device; forming a passivation layer on the front side of the substrate, the top metal pad being embedded in the passivation layer; forming an opening in the passivation layer, exposing the top metal pad; forming a deep trench in the substrate; filling a conductive material in the deep trench and the opening, resulting in a though-wafer via (TWV) feature in the deep trench and a pad-TWV feature in the opening, where the top metal pad being connected to the TWV feature through the pad-TWV feature; and applying a polishing process to remove excessive conductive material, forming a substantially planar surface.
摘要翻译：本公开提供了制造集成电路（IC）的方法。该方法包括在基板的正面上形成电子装置; 在所述基板的前侧形成顶部金属焊盘，所述顶部金属焊盘联接到所述电气装置; 在所述基板的正面上形成钝化层，所述顶部金属焊盘嵌入所述钝化层中; 在钝化层中形成开口，暴露顶部金属垫; 在衬底中形成深沟槽; 在深沟槽和开口中填充导电材料，导致深沟槽中的贯穿晶片通孔（TWV）特征和开口中的焊盘TWV特征，其中顶部金属焊盘通过该沟槽连接到TWV特征 pad-TWV功能; 以及施加抛光工艺以去除过量的导电材料，形成基本平坦的表面。

67. 发明授权

US08227288B2 Image sensor and method of fabricating same 有权
标题翻译：图像传感器及其制造方法
公开(公告)号：US08227288B2
公开(公告)日：2012-07-24
申请号：US12413752
申请日：2009-03-30
申请人： Wen-De Wang , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Jeng-Shyan Lin
发明人： Wen-De Wang , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Jeng-Shyan Lin
IPC分类号： H01L21/00
CPC分类号： H01L27/14685 , H01L27/14623 , H01L27/1463 , H01L27/14636 , H01L27/1464
摘要： Provided is a method of fabricating an image sensor device. The method includes providing a device substrate having a front side and a back side. The method includes forming first and second radiation-sensing regions in the device substrate, the first and second radiation-sensing regions being separated by an isolation structure. The method also includes forming a transparent layer over the back side of the device substrate. The method further includes forming an opening in the transparent layer, the opening being aligned with the isolation structure. The method also includes filling the opening with an opaque material.
摘要翻译：提供了一种制造图像传感器装置的方法。该方法包括提供具有前侧和后侧的装置基板。该方法包括在器件衬底中形成第一和第二辐射感测区域，第一和第二辐射感测区域由隔离结构隔开。该方法还包括在器件衬底的背面上形成透明层。该方法还包括在透明层中形成开口，该开口与隔离结构对准。该方法还包括用不透明材料填充开口。

68. 发明申请

US20120038017A1 Method for Making Multi-Step Photodiode Junction Structure for Backside Illuminated Sensor 有权
标题翻译：制造背光照明传感器多步光电二极管结结构的方法
公开(公告)号：US20120038017A1
公开(公告)日：2012-02-16
申请号：US13271780
申请日：2011-10-12
申请人： Tzu-Hsuan Hsu , Dun-Nian Yaung
发明人： Tzu-Hsuan Hsu , Dun-Nian Yaung
IPC分类号： H01L31/02
CPC分类号： H01L27/14645 , H01L27/1464
摘要： A method of making a backside illuminated sensor is provided. A substrate is provided and a high energy ion implantation is performed over the substrate to implant a first doped region. A layer is formed over the substrate and a self-align high energy ion implantation is performed over the substrate to implant a second doped region over the first doped region. The combined thickness of the first and second doped region is greater than 50 percent of thickness of the substrate and the distance between back surface of the substrate and the first and second doped regions is less than 50 percent of thickness of the substrate. In this way, an enlarged light sensing region is formed through which electrons generated from back surface of the surface may easily reach the pixel.
摘要翻译：提供制造背面照明传感器的方法。提供衬底并且在衬底上执行高能离子注入以注入第一掺杂区域。在衬底上形成层，并在衬底上执行自对准高能离子注入，以在第一掺杂区域上注入第二掺杂区域。第一和第二掺杂区域的组合厚度大于衬底的厚度的50％，并且衬底的背表面与第一和第二掺杂区域之间的距离小于衬底厚度的50％。以这种方式，形成放大的光感测区域，通过该放大的光感测区域从表面的后表面产生的电子可以容易地到达像素。

69. 发明申请

US20110298072A1 RIDGE STRUCTURE FOR BACK SIDE ILLUMINATED IMAGE SENSOR 有权
标题翻译：背面照明图像传感器的RIDGE结构
公开(公告)号：US20110298072A1
公开(公告)日：2011-12-08
申请号：US12794101
申请日：2010-06-04
申请人： Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Keng-Yu Chou , Wen-De Wang , Pao-Tung Chen
发明人： Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Keng-Yu Chou , Wen-De Wang , Pao-Tung Chen
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L27/14685 , H01L27/1462 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/1464 , H01L27/14643 , H01L27/14689
摘要： Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side. The image sensor includes first and second radiation-detection devices that are disposed in the substrate. The first and second radiation-detection devices are operable to detect radiation waves that enter the substrate through the back side. The image sensor also includes an anti-reflective coating (ARC) layer. The ARC layer is disposed over the back side of the substrate. The ARC layer has first and second ridges that are disposed over the first and second radiation-detection devices, respectively. The first and second ridges each have a first refractive index value. The first and second ridges are separated by a substance having a second refractive index value that is less than the first refractive index value.
摘要翻译：提供了一种图像传感器装置。图像传感器装置包括具有正面和背面的基板。图像传感器包括设置在基板中的第一和第二放射线检测装置。第一和第二放射线检测装置可操作以检测通过背面进入衬底的辐射波。图像传感器还包括抗反射涂层（ARC）层。 ARC层设置在基板的背面上。 ARC层具有分别设置在第一和第二辐射检测装置上的第一和第二脊。第一和第二脊各自具有第一折射率值。第一和第二脊由具有小于第一折射率值的第二折射率值的物质分开。

70. 发明授权

US07999342B2 Image sensor element for backside-illuminated sensor 有权
标题翻译：用于背面照明传感器的图像传感器元件
公开(公告)号：US07999342B2
公开(公告)日：2011-08-16
申请号：US11859848
申请日：2007-09-24
申请人： Tzu-Hsuan Hsu , Dun-Nian Yaung , Ching-Chun Wang
发明人： Tzu-Hsuan Hsu , Dun-Nian Yaung , Ching-Chun Wang
IPC分类号： H01L31/0232
CPC分类号： H01L27/14625 , H01L27/14603 , H01L27/1464
摘要： Provided is a backside-illuminated sensor including a semiconductor substrate having a front surface and a back surface. A plurality of image sensor elements are formed on the front surface of the semiconductor substrate. At least one of the image sensor elements includes a transfer transistor and a photodetector. The gate of the transfer transistor includes an optically reflective layer. The gate of the transfer transistor, including the optically reflective layer, overlies the photodetector. In one embodiment, the gate overlies the photodetector by at least 5%.
摘要翻译：提供了一种背面照明传感器，其包括具有前表面和后表面的半导体基板。多个图像传感器元件形成在半导体衬底的前表面上。图像传感器元件中的至少一个包括传输晶体管和光电检测器。转移晶体管的栅极包括光反射层。包括光反射层的传输晶体管的栅极覆盖在光电检测器上。在一个实施例中，栅极覆盖光电探测器至少5％。

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