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51. 发明申请

US20110114155A1 SOLAR ENERGY USE 审中-公开
标题翻译：太阳能使用
公开(公告)号：US20110114155A1
公开(公告)日：2011-05-19
申请号：US12997125
申请日：2009-06-09
申请人： Alexander Stoev
发明人： Alexander Stoev
IPC分类号： H01L31/052 , B21D53/02 , H01L31/058
CPC分类号： H02S40/44 , F24S10/755 , H02S20/23 , Y02B10/12 , Y02E10/44 , Y02E10/60 , Y10T29/49364
摘要： The solar combination panel, including a solar panel and a heat exchanger, has a tubular heat exchanger at the back of a solar panel, by which the solar panel can always be operated in the optimal temperature range so as to improve the electricity yield. A host of heat collector sheets, which are provided as heat collectors and are attached by cementing, are located on the back cover film of the solar panel. Fluted metal adhesive plates are located on the heat collector sheets. The fluted metal adhesive plates are likewise cemented and in the fluting of which a metal pipe is geometrically cemented such that in this way the transmission of power from the heat exchanger to the solar panel is minimized. A method for producing the solar combination panel is described.
摘要翻译：包括太阳能电池板和热交换器的太阳能组合板在太阳能电池板的背面具有管状热交换器，太阳能电池板可以始终在最佳温度范围内运行，从而提高电力产量。大量集热片设置在太阳能电池板的后盖膜上，它们作为集热器设置并通过固井而附着。槽形金属粘合板位于集热片上。带槽纹的金属粘合板同样是胶合的，并且在其凹槽中金属管几何地粘合，使得以这种方式将功率从热交换器传输到太阳能电池板被最小化。对太阳能组合面板的制造方法进行说明。

52. 发明申请

US20110088755A1 MOBILE SOLAR POWER GENERATOR 审中-公开
标题翻译：移动太阳能发电机
公开(公告)号：US20110088755A1
公开(公告)日：2011-04-21
申请号：US12580020
申请日：2009-10-15
申请人： Robert SUN
发明人： Robert SUN
IPC分类号： H01L31/058
CPC分类号： H02S10/10 , F24S10/90 , F24S60/00 , Y02E10/40
摘要： A mobile solar power generator is disclosed. The mobile solar power generator includes a plurality of solar energy collecting plates, a thermoelectric conversion unit, and a power distribution unit. The solar energy collecting plates are disposed at a top and/or a lateral side of the thermoelectric conversion unit for collecting thermal energy provided by the sun. The thermoelectric conversion unit is adapted for utilizing the collected thermal energy to vaporize a liquid into a vapor, and generating electric power with the vapor. The liquid has a relatively low boiling point. The power distribution unit is coupled to the thermoelectric conversion unit, for providing the electric power generated by the thermoelectric conversion unit to drive an external electric appliance.
摘要翻译：公开了一种移动式太阳能发电机。移动太阳能发电机包括多个太阳能收集板，热电转换单元和配电单元。太阳能收集板设置在热电转换单元的顶部和/或侧面，用于收集由太阳提供的热能。热电转换单元适于利用所收集的热能将液体蒸发成蒸汽，并且与蒸汽产生电力。液体沸点相对较低。电力分配单元耦合到热电转换单元，用于提供由热电转换单元产生的电力来驱动外部电器。

53. 发明申请

US20110030766A1 Solar energy utilizing apparatuses and methods of manufacturing the same 审中-公开
标题翻译：太阳能利用装置及其制造方法
公开(公告)号：US20110030766A1
公开(公告)日：2011-02-10
申请号：US12659154
申请日：2010-02-26
申请人： Hyung-bin Son , Jong-min Kim , Young-jun Park , Seung-nam Cha
发明人： Hyung-bin Son , Jong-min Kim , Young-jun Park , Seung-nam Cha
IPC分类号： H01L31/058 , H01L31/00 , H01L31/18
CPC分类号： H01L31/035281 , F24S10/503 , F24S10/504 , H01L31/048 , H02S40/44 , Y02E10/44 , Y02E10/50 , Y02E10/60
摘要： A solar energy utilizing apparatus includes: a fluid pipe forming a flow path of a heat medium and including a convex surface; and a solar cell formed on the convex surface of the fluid pipe. In a method of manufacturing a solar energy utilizing apparatus, a first substrate including a first surface and a second surface is formed. The first surface has a plurality of convex surfaces and the second surface has a plurality of concave surfaces. A plurality of solar cells are formed on the convex surfaces, respectively. A second substrate is formed, and the second substrate is bonded to the first substrate.
摘要翻译：太阳能利用装置包括：流体管，其形成热介质的流路并且包括凸面; 以及形成在流体管的凸表面上的太阳能电池。在制造太阳能利用装置的方法中，形成包括第一表面和第二表面的第一基板。第一表面具有多个凸面，第二面具有多个凹面。在凸面上分别形成有多个太阳能电池。形成第二基板，第二基板与第一基板接合。

54. 发明授权

US07804148B2 Opto-thermal mask including aligned thermal dissipative layer, reflective layer and transparent capping layer 失效
标题翻译：光热掩模包括对准的热耗散层，反射层和透明覆盖层
公开(公告)号：US07804148B2
公开(公告)日：2010-09-28
申请号：US11355799
申请日：2006-02-16
申请人： Louis L. Hsu , Jack A. Mandelman , Chandrasekhar Narayan , Chun-Yung Sung
发明人： Louis L. Hsu , Jack A. Mandelman , Chandrasekhar Narayan , Chun-Yung Sung
IPC分类号： H01L23/58 , H01L31/058 , H01L31/02 , H01L31/0232 , H01L31/024 , H01L21/033 , H01L21/00
CPC分类号： H01L21/268 , H01L21/84 , H01L27/1203 , H01L29/78603 , H01L2924/0002 , H01L2924/00
摘要： An opto-thermal annealing mask stack layer includes a thermal dissipative layer located over a substrate. A reflective layer is located upon the thermal dissipative layer. A transparent capping layer, that may have a thickness from about 10 to about 100 angstroms, is located upon the reflective layer. The opto-thermal annealing mask layer may be used as a gate electrode within a field effect device.
摘要翻译：光热退火掩模层叠层包括位于衬底上的散热层。反射层位于热耗散层上。可以具有约10至约100埃厚度的透明覆盖层位于反射层上。光热退火掩模层可以用作场效应器件中的栅电极。

55. 发明授权

US07800195B2 Semiconductor apparatus having temperature sensing diode 有权
标题翻译：具有温度感测二极管的半导体装置
公开(公告)号：US07800195B2
公开(公告)日：2010-09-21
申请号：US12071719
申请日：2008-02-26
申请人： Shoji Ozoe , Shoji Mizuno , Takaaki Aoki , Tomofusa Shiga
发明人： Shoji Ozoe , Shoji Mizuno , Takaaki Aoki , Tomofusa Shiga
IPC分类号： H01L31/058
CPC分类号： H01L29/945 , G01K7/015 , H01L28/40 , H01L29/92
摘要： A semiconductor apparatus is provided. The semiconductor apparatus includes a semiconductor substrate and a temperature sensing diode that is disposed on a surface part of the semiconductor substrate. A relation between a forward current flowing through the temperature sensing diode and a corresponding voltage drop across the temperature sensing diode varies with temperature. The semiconductor apparatus further includes a capacitor that is coupled with the temperature sensing diode, configured to reduce noise to act on the temperature sensing diode, and disposed such that the capacitor and the temperature sensing diode have a layered structure in a thickness direction of the semiconductor substrate.
摘要翻译：提供一种半导体装置。半导体装置包括设置在半导体衬底的表面部分上的半导体衬底和温度感测二极管。流过温度感测二极管的正向电流和温度感测二极管两端的相应电压降之间的关系随着温度而变化。半导体装置还包括与温度感测二极管耦合的电容器，其被配置为降低作用在温度感测二极管上的噪声，并且被布置为使得电容器和温度感测二极管在半导体的厚度方向上具有层状结构基质。

56. 发明授权

US07741692B2 Integrated circuit device with temperature monitor members 有权
标题翻译：具有温度监视器构件的集成电路装置
公开(公告)号：US07741692B2
公开(公告)日：2010-06-22
申请号：US11087587
申请日：2005-03-24
申请人： Hiroaki Ohkubo , Yasutaka Nakashiba , Naoyoshi Kawahara , Hiroshi Murase , Naoki Oda , Tokuhito Sasaki , Nobukazu Ito
发明人： Hiroaki Ohkubo , Yasutaka Nakashiba , Naoyoshi Kawahara , Hiroshi Murase , Naoki Oda , Tokuhito Sasaki , Nobukazu Ito
IPC分类号： H01L31/058
CPC分类号： H01L23/34 , G01K7/01 , G01K7/42 , H01L2924/0002 , H01L2924/00
摘要： In a semiconductor integrated circuit device, a logic circuit section is provided at the top surface of a P-type silicon substrate and a multi-level wiring layer. The device is further provided with a temperature sensor section in which a first temperature monitor member of vanadium oxide is provided above the multi-level wiring layer. A second temperature monitor member of Ti is provided at a lowermost layer of the multi-level wiring layer. The first and second temperature monitor members are connected in series between a ground potential wire and a power-source potential wire, with an output terminal connected to the node of both members. The temperature coefficient of the electric resistivity of the first temperature monitor member is negative, while that of the second temperature monitor member is positive.
摘要翻译：在半导体集成电路器件中，逻辑电路部分设置在P型硅衬底和多层布线层的顶表面处。该装置还设置有温度传感器部分，其中在多层布线层上方设置有氧化钒的第一温度监测部件。 Ti的第二温度监视器构件设置在多层布线层的最下层。第一和第二温度监视器构件串联连接在地电位线和电源电位线之间，输出端连接到两个构件的节点。第一温度监视部件的电阻率的温度系数为负，第二温度监视部件的温度系数为正。

57. 发明授权

US07696595B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07696595B2
公开(公告)日：2010-04-13
申请号：US10573467
申请日：2004-09-24
申请人： Hiroya Kobayashi , Masaharu Muramatsu
发明人： Hiroya Kobayashi , Masaharu Muramatsu
IPC分类号： H01L31/058
CPC分类号： H01L21/563 , H01L24/29 , H01L24/81 , H01L24/90 , H01L27/14636 , H01L27/1464 , H01L27/14806 , H01L2224/73203 , H01L2224/81203 , H01L2224/81801 , H01L2224/83191 , H01L2224/83194 , H01L2924/01004 , H01L2924/01006 , H01L2924/01015 , H01L2924/01033 , H01L2924/01058 , H01L2924/01082 , H01L2924/15787 , H01L2924/19041 , H01L2924/19043 , H01L2924/19105 , H01L2924/30105 , H01L2924/3512 , H01L2924/00
摘要： With this semiconductor device, the distortion and cracking of a thinned portion of a semiconductor substrate are prevented to enable high precision focusing with respect to a photodetecting unit and uniformity and stability of high sensitivity of the photodetecting unit to be maintained. A semiconductor device 1 has a semiconductor substrate 10, a wiring substrate 20, conductive bumps 30, and a resin 32. A CCD 12 and a thinned portion 14 are formed on semiconductor substrate 10. Electrodes 16 of semiconductor substrate 10 are connected via conductive bumps 30 to electrodes 22 of wiring substrate 20. Insulating resin 32 fills a gap between outer edge 15 of thinned portion 14 and wiring substrate 20 to reinforce the bonding strengths of conductive bumps 30. This resin 32 is a resin sheet that has been formed in advance so as to surround a periphery of a gap between thinned portion 14 and wiring substrate 20 except for portions of the periphery.
摘要翻译：通过该半导体装置，能够防止半导体基板的薄壁化部分的变形和破裂，从而能够实现相对于光检测单元的高精度聚焦，并且保持光检测单元的高灵敏度的均匀性和稳定性。半导体器件1具有半导体衬底10，布线衬底20，导电凸块30和树脂32.半导体衬底10上形成CCD 12和薄化部分14.半导体衬底10的电极16通过导电凸块绝缘树脂32填充薄部14的外缘15与布线基板20之间的间隙，以增强导电凸块30的接合强度。该树脂32是预先形成的树脂片以便围绕除了周边部分之间的间隔部分14和布线基板20之间的间隙的周边。

58. 发明授权

US07696592B2 Solid state imaging apparatus method for fabricating the same and camera using the same 有权
标题翻译：固态成像装置的制造方法及使用其的相机
公开(公告)号：US07696592B2
公开(公告)日：2010-04-13
申请号：US10571426
申请日：2005-06-28
申请人： Mitsuyoshi Mori , Daisuke Ueda
发明人： Mitsuyoshi Mori , Daisuke Ueda
IPC分类号： H01L31/058
CPC分类号： H01L27/14603 , H01L27/1463 , H01L27/14643 , H01L27/14689
摘要： A solid state imaging apparatus includes a plurality of photoelectric conversion sections formed in an imaging area of a silicon substrate, and an embedded layer embedded in an isolation trench formed in at least one part of the silicon substrate located around the photoelectric conversion sections. The embedded layer is made of an isolation material having a thermal expansion coefficient larger than silicon oxide and equal to or smaller than silicon.
摘要翻译：固态成像装置包括形成在硅衬底的成像区域中的多个光电转换部分和嵌入在位于光电转换部分周围的硅衬底的至少一部分中的隔离沟槽中的嵌入层。嵌入层由具有大于硅的热膨胀系数和等于或小于硅的热膨胀系数的隔离材料制成。

59. 发明授权

US07652343B2 Solid-state imaging device and method for manufacturing same 失效
标题翻译：固态成像装置及其制造方法
公开(公告)号：US07652343B2
公开(公告)日：2010-01-26
申请号：US10963849
申请日：2004-10-13
申请人： Keiji Mabuchi
发明人： Keiji Mabuchi
IPC分类号： H01L31/058
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14643
摘要： The reduction in size, noise and voltage is realized in a MOS solid-state imaging device. A gate electrode in a pixel part is formed in a two-level structure. An amplifier gate of an amplifier transistor is formed in the first level while a select gate of a select transistor is formed in the second level. The both are structurally partly overlapped. With the first-level amplifier gate as self-alignment, ions are implanted for a select gate in the second level. Although the gate electrode if formed in one level as in the conventional requires a space of nearly a design rule between the amplifier gate and the select gate, the structure of the invention can eliminate such a dead space. Meanwhile, because the diffusion layer does not exist between the amplifier gate and the select gate, the diffusion layer is eliminated of sheet resistance and voltage drop. Also, the resistance and voltage decrease, resulting from the LDD region of a transistor gate end, are eliminated in one end of the amplifier gate and in one end of the select gate.
摘要翻译：在MOS固态成像装置中实现了尺寸，噪声和电压的降低。像素部分中的栅电极形成为二电平结构。放大器晶体管的放大器栅极形成在第一电平，而选择晶体管的选择栅极形成在第二电平。两者在结构上部分重叠。利用第一级放大器门作为自对准，在第二级中注入离子用于选择栅极。虽然像以往那样形成在一个级中的栅电极需要放大器门与选择栅极之间几乎设计规则的空间，但是本发明的结构可以消除这样的死空间。同时，由于放大器栅极和选择栅极之间不存在扩散层，所以消除了薄层电阻和电压降的扩散层。此外，由晶体管栅极端的LDD区产生的电阻和电压降低在放大器门的一端和选择栅极的一端被消除。

60. 发明授权

US07629664B1 Lateral-moving micromachined thermal bimorph and method for fabricating same 有权
标题翻译：横向移动微机械加热双压电晶片及其制造方法
公开(公告)号：US07629664B1
公开(公告)日：2009-12-08
申请号：US11149882
申请日：2005-06-10
申请人： Robert Faye Elliott , Philip John Reiner
发明人： Robert Faye Elliott , Philip John Reiner
IPC分类号： H01L31/058
CPC分类号： H01H37/52 , B81B3/0078 , B81B2201/032 , B81B2203/056 , H01H2001/0047 , H01H2037/008 , H01H2300/032
摘要： The Lateral-Moving Micromachined Thermal Bimorph provides the capability of achieving in-plane thermally-induced motion on a microchip, as opposed to the much more common out-of-plane, or vertical, motion seen in many devices. The present invention employs a novel fabrication process to allow the fabrication of a lateral bimorph in a fundamentally planar set of processes. In addition, the invention incorporates special design features that allow the bimorph to maintain material interfaces.
摘要翻译：横向移动微机械加热双压电晶片提供了在微芯片上实现面内热感应运动的能力，而不是在许多器件中看到的更常见的平面外或垂直运动。本发明采用新颖的制造工艺，以允许在基本平面的工艺集合中制造横向双压电晶片。此外，本发明还包含允许双压电晶体保持材料界面的特殊设计特征。

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