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1. 发明授权

US07696592B2 Solid state imaging apparatus method for fabricating the same and camera using the same 有权
标题翻译：固态成像装置的制造方法及使用其的相机
公开(公告)号：US07696592B2
公开(公告)日：2010-04-13
申请号：US10571426
申请日：2005-06-28
申请人： Mitsuyoshi Mori , Daisuke Ueda
发明人： Mitsuyoshi Mori , Daisuke Ueda
IPC分类号： H01L31/058
CPC分类号： H01L27/14603 , H01L27/1463 , H01L27/14643 , H01L27/14689
摘要： A solid state imaging apparatus includes a plurality of photoelectric conversion sections formed in an imaging area of a silicon substrate, and an embedded layer embedded in an isolation trench formed in at least one part of the silicon substrate located around the photoelectric conversion sections. The embedded layer is made of an isolation material having a thermal expansion coefficient larger than silicon oxide and equal to or smaller than silicon.
摘要翻译：固态成像装置包括形成在硅衬底的成像区域中的多个光电转换部分和嵌入在位于光电转换部分周围的硅衬底的至少一部分中的隔离沟槽中的嵌入层。嵌入层由具有大于硅的热膨胀系数和等于或小于硅的热膨胀系数的隔离材料制成。

2. 发明授权

US08354693B2 Solid state imaging device and method for fabricating the same 有权
标题翻译：固态成像装置及其制造方法
公开(公告)号：US08354693B2
公开(公告)日：2013-01-15
申请号：US12035340
申请日：2008-02-21
申请人： Mitsuyoshi Mori , Toru Okino , Daisuke Ueda , Toshinobu Matsuno
发明人： Mitsuyoshi Mori , Toru Okino , Daisuke Ueda , Toshinobu Matsuno
IPC分类号： H01L31/0336
CPC分类号： H01L27/14689 , H01L27/14632 , H01L27/14645 , H01L27/14687
摘要： A solid state imaging device includes a pixel having a photoelectric conversion element formed on a semiconductor substrate. The photoelectric conversion element includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type formed on the first semiconductor layer and forming a junction therebetween; a third semiconductor layer formed on the second semiconductor layer and having a smaller band gap energy than the second semiconductor layer, the third semiconductor layer being made of a single-crystal semiconductor and containing an impurity; and a fourth semiconductor layer of the first conductivity type covering a side surface and an upper surface of the third semiconductor layer. Provision of the fourth semiconductor layer can reduce a current flowing in dark conditions.
摘要翻译：固态成像装置包括具有形成在半导体基板上的光电转换元件的像素。光电转换元件包括：第一导电类型的第一半导体层; 第二导电类型的第二半导体层，形成在第一半导体层上并在其间形成接合部; 形成在所述第二半导体层上并且具有比所述第二半导体层更小的带隙能量的第三半导体层，所述第三半导体层由单晶半导体制成并且含有杂质; 以及覆盖第三半导体层的侧表面和上表面的第一导电类型的第四半导体层。提供第四半导体层可以减少在黑暗条件下流动的电流。

3. 发明申请

US20080105906A1 Solid State Imaging Apparatus Method for Fabricating the Same and Camera Using the Same 有权
标题翻译：固态成像装置及其制造方法及其使用方法
公开(公告)号：US20080105906A1
公开(公告)日：2008-05-08
申请号：US10571426
申请日：2005-06-28
申请人： Mitsuyoshi Mori , Daisuke Ueda
发明人： Mitsuyoshi Mori , Daisuke Ueda
IPC分类号： H01L29/76 , H01L29/94 , H01L31/00 , H01L21/8238
CPC分类号： H01L27/14603 , H01L27/1463 , H01L27/14643 , H01L27/14689
摘要： A solid state imaging apparatus includes a plurality of photoelectric conversion sections formed in an imaging area of a silicon substrate, and an embedded layer embedded in an isolation trench formed in at least one part of the silicon substrate located around the photoelectric conversion sections. The embedded layer is made of an isolation material having a thermal expansion coefficient larger than silicon oxide and equal to or smaller than silicon.
摘要翻译：固态成像装置包括形成在硅衬底的成像区域中的多个光电转换部分和嵌入在位于光电转换部分周围的硅衬底的至少一部分中的隔离沟槽中的嵌入层。嵌入层由具有大于硅的热膨胀系数和等于或小于硅的热膨胀系数的隔离材料制成。

4. 发明申请

US20070230722A1 Condenser microphone 审中-公开
标题翻译：冷凝器麦克风
公开(公告)号：US20070230722A1
公开(公告)日：2007-10-04
申请号：US11651024
申请日：2007-01-09
申请人： Mitsuyoshi Mori , Daisuke Ueda
发明人： Mitsuyoshi Mori , Daisuke Ueda
IPC分类号： H04R25/00
CPC分类号： H04R19/016 , H01G7/021
摘要： An electret condenser microphone (ECM) forms an air-gap capacitor structure in which an upper electrode and a lower electrode are opposed to each other with its hollow portion interposed therebetween, and an electret film made of a charge retention material is formed between the electrodes. The ECM is formed continuously with a semiconductor substrate, and the electret film is made of an amorphous perfluoropolymeric resin. The electret film made of such a material can be formed on the substrate by spin coating. This facilitates reducing the thickness of the electret film. In addition, the film can be easily etched by a fluorine based gas used in a semiconductor process. This permits fine patterning, resulting in the reduced area of a condenser.
摘要翻译：驻极体电容式麦克风（ECM）形成气隙电容器结构，其中上电极和下电极彼此相对并且其中空部分彼此相对，并且在电极之间形成由电荷保持材料制成的驻极体膜。 ECM与半导体衬底连续形成，驻极体膜由无定形全氟聚合物树脂制成。由这种材料制成的驻极体膜可以通过旋涂形成在基板上。这有助于减小驻极体膜的厚度。此外，可以通过半导体工艺中使用的氟基气体容易地蚀刻该膜。这允许精细图案化，导致冷凝器的面积减小。

5. 发明授权

US08582277B2 Laminated type ceramic electronic parts 有权
标题翻译：层压型陶瓷电子零件
公开(公告)号：US08582277B2
公开(公告)日：2013-11-12
申请号：US13300952
申请日：2011-11-21
申请人： Hirobumi Tanaka , Makoto Endo , Satoko Ueda , Daisuke Ueda , Shogo Murosawa , Daisuke Yoshida , Kenta Ono , Minoru Ogasawara , Tatsuya Kikuchi
发明人： Hirobumi Tanaka , Makoto Endo , Satoko Ueda , Daisuke Ueda , Shogo Murosawa , Daisuke Yoshida , Kenta Ono , Minoru Ogasawara , Tatsuya Kikuchi
IPC分类号： H01G4/12 , C04B35/468
CPC分类号： H01G4/1227 , H01G4/1281 , H01G4/30
摘要： A multilayer ceramic electronic component comprising an element body in which a dielectric layer and an internal electrode layer are stacked. The dielectric layer is constituted from a dielectric ceramic composition including; a compound having a perovskite structure expressed by a formula of ABO3 (A is at least one selected from Ba, Ca, and Sr; B is at least one selected from Ti, Zr, and Hf); an oxide of Mg; an oxide of rare earth elements including Sc and Y; and an oxide including Si. The dielectric ceramic composition comprises a plurality of dielectric particles and a grain boundary present in between the dielectric particles. In the grain boundary, when content ratios of Mg and Si are set to D(Mg) and D(Si) respectively, D(Mg) is 0.2 to 1.8 wt % in terms of MgO, and D(Si) is 0.4 to 8.0 wt % in terms of SiO2.
摘要翻译：一种多层陶瓷电子部件，其特征在于，具有层叠有电介质层和内部电极层的元件体。电介质层由介电陶瓷组合物构成，包括：具有由式ABO 3表示的钙钛矿结构的化合物（A是选自Ba，Ca和Sr中的至少一种; B是选自Ti，Zr和Hf中的至少一种）; Mg的氧化物; 包括Sc和Y的稀土元素的氧化物; 和包含Si的氧化物。电介质陶瓷组合物包含存在于电介质颗粒之间的多个电介质颗粒和晶界。在晶界中，当Mg和Si的含量比分别设定为D（Mg）和D（Si）时，D（Mg）以MgO计为0.2〜1.8重量％，D（Si）为0.4〜8.0 重量％。

6. 发明授权

US08307772B2 Sewing machine 有权
标题翻译：缝纫机
公开(公告)号：US08307772B2
公开(公告)日：2012-11-13
申请号：US12656236
申请日：2010-01-21
申请人： Akifume Nakashima , Daisuke Ueda
发明人： Akifume Nakashima , Daisuke Ueda
IPC分类号： D05B23/00
CPC分类号： D05C7/00 , D05B29/06 , D05D2303/00
摘要： A sewing machine including a presser foot that presses a workpiece, a presser bar that has a lower end allowing detachable attachment of the presser foot; a presser bar vertically moving mechanism that moves the presser bar up and down; a presser bar driver that drives the presser bar vertically moving mechanism; a needle plate that has an upper surface for placing the workpiece; a projecting element that is detachably attached to the presser bar and that is driven up and down with the presser bar as the presser bar is driven up and down by the presser bar driver through the presser bar vertically moving mechanism to form embosses on the workpiece by downwardly pressing the workpiece; and a receiving section that is provided on the upper surface of the needle plate that opposes the projecting element to receive a tip of the projecting element.
摘要翻译：一种缝纫机，包括按压工件的压脚，具有下端的压脚，允许压脚可拆卸地附接; 按压杆上下移动机构; 一个驱动压杆垂直移动机构的压脚驱动器; 具有用于放置所述工件的上表面的针板; 突出元件，其可拆卸地附接到压脚杆，并且当压杆作为压杆时上下驱动，压杆驱动器通过压杆垂直移动机构被上下驱动，以在工件上形成压花，以通过向下按压工件; 以及接收部，其设置在与所述突出元件相对的所述针板的上表面上，以容纳所述突出元件的前端。

7. 发明授权

US08203376B2 Semiconductor device and method for driving the same 有权
标题翻译：半导体装置及其驱动方法
公开(公告)号：US08203376B2
公开(公告)日：2012-06-19
申请号：US12445390
申请日：2007-11-20
申请人： Tatsuo Morita , Manabu Yanagihara , Hidetoshi Ishida , Yasuhiro Uemoto , Hiroaki Ueno , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Tatsuo Morita , Manabu Yanagihara , Hidetoshi Ishida , Yasuhiro Uemoto , Hiroaki Ueno , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： H03K17/687
CPC分类号： H01L29/7787 , H01L27/0605 , H01L29/0619 , H01L29/1066 , H01L29/2003 , H01L29/432 , H01L29/739 , H01L29/8124
摘要： A semiconductor device includes a semiconductor layer stack 13 formed on a substrate 11 and having a channel region, a first electrode 16A and a second electrode 16B formed spaced apart from each other on the semiconductor layer stack 13, a first gate electrode 18A formed between the first electrode 16A and the second electrode 16B, and a second gate electrode 18B formed between the first gate electrode 18A and the second electrode 16B. A first control layer 19A having a p-type conductivity is formed between the semiconductor layer stack 13 and the first gate electrode 18A.
摘要翻译：半导体器件包括形成在衬底11上并具有沟道区的半导体层堆叠13，在半导体层叠层13上彼此隔开形成的第一电极16A和第二电极16B，形成在第一栅电极18A之间的第一栅电极18A 第一电极16A和第二电极16B，以及形成在第一栅电极18A和第二电极16B之间的第二栅电极18B。在半导体层堆叠13和第一栅电极18A之间形成具有p型导电性的第一控制层19A。

8. 发明授权

US08134191B2 Solid-state imaging device, signal processing method, and camera 有权
标题翻译：固态成像装置，信号处理方法和相机
公开(公告)号：US08134191B2
公开(公告)日：2012-03-13
申请号：US12160291
申请日：2006-07-11
申请人： Takumi Yamaguchi , Yuuichi Inaba , Daisuke Ueda , Yoshiyuki Matsunaga
发明人： Takumi Yamaguchi , Yuuichi Inaba , Daisuke Ueda , Yoshiyuki Matsunaga
IPC分类号： H01L31/09
CPC分类号： H04N9/045 , H04N5/33 , H04N5/332
摘要： A solid-state imaging apparatus that performs color imaging using visible light and imaging using infrared light, the solid-state imaging apparatus including a plurality of two-dimensionally arranged pixel cells, in each of which a filter mainly transmits one of visible light and infrared light, wherein filters are arranged such that a first unit of arrangement where a plurality of filters that mainly transmit visible light are arranged and a second unit of arrangement where a filter that mainly transmits visible light and a filter that mainly transmits infrared light are arranged are alternately arranged in both a row direction and a column direction. Also, in the first unit of arrangement are arranged filters including three kinds of filters each transmitting one of red light, green light and blue light and in the second unit of arrangement are arranged four kinds of filters each transmitting one of red light, green light, blue light and infrared light.
摘要翻译：一种使用可见光进行彩色成像并使用红外光成像的固态成像装置，所述固态成像装置包括多个二维排列的像素单元，每个像素单元中的每一个主要透过可见光和红外线之一光，其中滤光器被布置成使得布置有主要透射可见光的多个滤光器的第一布置单元和布置有主要透射可见光的滤光器的第二单元和布置有主要透射红外光的滤光器的布置的第二单元是布置的，交替地排列在行方向和列方向上。此外，在第一单元中布置有包括发射红光，绿光和蓝光中的一种的三种滤光器的滤色器，并且在第二种布置中布置了四种滤色片，每种滤色片透过红光，绿光，蓝光和红外灯。

9. 发明授权

US08076698B2 Transistor and method for operating the same 有权
标题翻译：晶体管及其操作方法
公开(公告)号：US08076698B2
公开(公告)日：2011-12-13
申请号：US11995040
申请日：2006-06-27
申请人： Daisuke Ueda , Tsuyoshi Tanaka , Yasuhiro Uemoto , Tetsuzo Ueda , Manabu Yanagihara , Masahiro Hikita , Hiroaki Ueno
发明人： Daisuke Ueda , Tsuyoshi Tanaka , Yasuhiro Uemoto , Tetsuzo Ueda , Manabu Yanagihara , Masahiro Hikita , Hiroaki Ueno
IPC分类号： H01L31/0328
CPC分类号： H01L29/739 , H01L29/1066 , H01L29/2003 , H01L29/4175 , H01L29/7786
摘要： In a transistor, an AlN buffer layer 102, an undoped GaN layer 103, an undoped AlGaN layer 104, a p-type control layer 105, and a p-type contact layer 106 are formed in this order on a sapphire substrate 101. The transistor further includes a gate electrode 110 in ohmic contact with the p-type contact layer 106, and a source electrode 108 and a drain electrode 109 provided on the undoped AlGaN layer 104. By applying a positive voltage to the p-type control layer 105, holes are injected into a channel to increase a current flowing in the channel.
摘要翻译：在晶体管中，在蓝宝石衬底101上依次形成AlN缓冲层102，未掺杂的GaN层103，未掺杂的AlGaN层104，p型控制层105和p型接触层106。晶体管还包括与p型接触层106欧姆接触的栅电极110以及设置在未掺杂的AlGaN层104上的源电极108和漏极109.通过向p型控制层105施加正电压，孔被注入到通道中以增加在通道中流动的电流。

10. 发明申请

US20100327486A1 Manufacturing Method of Cylindrical Member and Manufacturing Method of Vibration Damping Rubber Bushing Having the Cylindrical Member 有权
标题翻译：圆柱形构件的制造方法和具有圆柱形构件的振动阻尼橡胶衬套的制造方法
公开(公告)号：US20100327486A1
公开(公告)日：2010-12-30
申请号：US12821429
申请日：2010-06-23
申请人： Norimasa Kuki , Yoshikane Akiyama , Mitiharu Hikosaka , Kazuhiko Kato , Kazumasa Sekido , Daisuke Ueda , Harumi Niwa , Hiroshi Itazu , Yuji Mizuno
发明人： Norimasa Kuki , Yoshikane Akiyama , Mitiharu Hikosaka , Kazuhiko Kato , Kazumasa Sekido , Daisuke Ueda , Harumi Niwa , Hiroshi Itazu , Yuji Mizuno
IPC分类号： B28B1/02
CPC分类号： F16F1/3842 , B21H1/18 , B21J5/00 , B21J5/008 , B21J5/12 , B21J9/025 , B21K21/12 , F16F1/3828 , F16F1/3863 , F16F2230/0035 , F16F2230/02
摘要： A method of manufacturing a cylindrical member having anti-slip projections formed on axial end faces, the method comprising the steps of: employing a roller die, which is provided with a circumferential die groove of annular form extending through a medial section in a generatrix direction of a die face defined by an integral tapered outside peripheral face, and with a plurality of sloping die grooves extending in a tapered slope direction of the die face situated to both large-diameter and small-diameter sides of the circumferential die groove; providing plastic working to the axial end face with the small-diameter side of the roller die facing towards an inner peripheral side of the cylindrical member and with the large-diameter side facing towards an outer peripheral side, by pushing the die face against the axial end face while rotating circumferentially; and forming simultaneously an annular water barrier projection and the anti-slip projections.
摘要翻译：一种制造具有形成在轴向端面上的防滑突起的圆柱形构件的方法，所述方法包括以下步骤：使用辊模，其设置有沿母线方向延伸穿过中间部分的环形的周向模槽具有由整体的锥形外周面限定的模具面，并且具有沿着位于周向模槽的大直径侧和小直径侧的模面的锥形倾斜方向延伸的多个倾斜模槽; 向所述轴向端面提供塑性加工，所述辊模的小直径侧朝向所述圆筒形构件的内周侧，并且所述大直径侧面向外周侧，通过将所述模具面朝向轴向端面旋转; 同时形成环形防水突起和防滑突起。

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