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51. 发明授权

US3996573A Bubble propagation circuits and formation thereof 失效
标题翻译：气泡传播电路及其形成
公开(公告)号：US3996573A
公开(公告)日：1976-12-07
申请号：US569626
申请日：1975-04-21
申请人： Shalendra Kumar Singh
发明人： Shalendra Kumar Singh
IPC分类号： G11C19/08 , H01F10/06 , G11C11/14
CPC分类号： G11C19/0816 , H01F10/06
摘要： A magnetic domain memory comprising a planar layer of magnetic material in which magnetic bubbles are moved by a rotating magnetic field in the plane of the layer. At least one circuit or path is provided for guiding the propagation of the bubbles in the layer. This path comprises an overlay pattern of magnetically soft material the periphery of which defines the travel of the bubbles. The surface area of the layer bounding the outside of the overlay pattern comprises an ion-implanted region. This magnetic bubble propagation circuit is made by forming a thin film pattern of a magnetically soft material, such as permalloy, on the surface of a layer of magnetic material, and then directing at the surface of this layer ions having a sufficiently high energy level so as to effect implantation thereof in the lattice structure of the magnetic layer while utilizing the pattern of magnetically soft material to block the ions from penetration of the magnetic layer underlying the pattern.
摘要翻译：一种磁畴存储器，其包括磁性材料的平面层，其中通过所述层的平面中的旋转磁场使磁性气泡移动。提供至少一个电路或路径来引导层中气泡的传播。该路径包括磁性软材料的覆盖图案，其周边限定气泡的行进。覆盖覆盖图案外侧的层的表面积包括离子注入区域。该磁性气泡传播电路通过在磁性材料层的表面上形成诸如坡莫合金的软磁性材料的薄膜图案，然后在该层的表面上引导具有足够高的能级的离子，为了在磁性层的晶格结构中实现其植入，同时利用磁软材料的图案阻挡离子从图案下方的磁性层的穿透。

52. 发明授权

US3963569A Apparatus for plating elongated bodies 失效
标题翻译：用于电镀细长体的装置
公开(公告)号：US3963569A
公开(公告)日：1976-06-15
申请号：US529778
申请日：1974-12-05
申请人： Emil Toledo
发明人： Emil Toledo
IPC分类号： C25D7/06 , H01F10/06 , H01F41/26 , C25D5/08 , C25D17/00
CPC分类号： H01F41/26 , C25D7/0607 , H01F10/06
摘要： An electropolished, copper plated, beryllium copper wire is plated with a composite coating of a nickel-iron-cobalt alloy. Such coating consists of a layer having a high anisotropic field parameter, of the order of 6 oersteds or higher, adjacent the surface of the wire, superimposed by a layer having a lower anisotropic field parameter, of the order of 4 oersteds or less. The wire is plated in two plating cells, the first of which is provided with a plurality of passages directing the flow of a plating electrode with a major component of flow across the wire and a minor component of flow in one direction along the wire. The second plating cell is provided with a plurality of passages directing the flow of a plating electrolyte substantially transverse to the wire. The electrolyte supplied to the first cell contains salts of iron, nickel and cobalt, with cobalt being present in a relatively high concentration. A similar electrolyte is supplied to the second cell except that its maximum concentration of cobalt is about one fifth of that of the first electrolyte.
摘要翻译：电抛光，镀铜的铍铜线镀有镍 - 钴 - 钴合金复合涂层。这样的涂层由具有大于6奥斯特或更高的高各向异性场参数的层构成，邻近线的表面，叠加有具有较低各向异性场参数的层，大约为4奥斯特或更小。导线被镀在两个电镀单元中，其中第一个电镀槽设置有多个通道，其引导镀层电极的流动，其中流动的主要成分流过电线，并且沿导线沿一个方向流动一小部分流。第二电镀单元设置有多个通道，其引导电镀电解液的流动基本横向于电线。提供给第一个电池的电解质含有铁，镍和钴的盐，其中钴以较高的浓度存在。将类似的电解质供应到第二电池，不同之处在于钴的最大浓度是第一电解质的约五分之一。

53. 发明授权

US3921157A Nonuniform spacing layer for magnetic bubble circuits 失效
标题翻译：磁泡电路不均匀间隔层
公开(公告)号：US3921157A
公开(公告)日：1975-11-18
申请号：US45521974
申请日：1974-03-27
申请人： MONSANTO CO
发明人： SANDFORT ROBERT MELVIN
IPC分类号： G11C19/08 , H01F10/06 , H01F41/34 , G11C11/14
CPC分类号： H01F10/06 , G11C19/0808 , G11C19/0883 , H01F41/34
摘要： In a bubble chip, increased spacing between a circuit overlay and a sheet of magnetic bubble material is provided at selected locations for particular circuit elements from which bubbles are to be deflected by magnetic repulsion. Differential spacing is achieved in one embodiment by means of a stratified spacing layer composed of the conventional nonmagnetic spacing layer plus a layer of nonmagnetic metal etched to form a mesa pattern which may include electrical control leads where necessary.
摘要翻译：在气泡芯片中，电路覆盖层和一个磁性气泡材料片之间的间隔增加被提供在特定的电路元件的选定位置，气泡将通过磁性斥力偏转。在一个实施例中，通过由常规非磁性间隔层加上被蚀刻以形成台面图案的非磁性金属层组成的分层间隔层实现差分间隔，其中必要时可包括电控制引线。

54. 发明授权

US3920409A Plated ferromagnetic wire for wire memory 失效
标题翻译：电镀铁丝线用于线存储器
公开(公告)号：US3920409A
公开(公告)日：1975-11-18
申请号：US26415572
申请日：1972-06-19
申请人： HITACHI LTD
发明人： TANIGUCHI SATOSHI
IPC分类号： B21C37/04 , B21F19/00 , H01F10/06 , B23P3/00 , G11C11/02
CPC分类号： B21C37/042 , B21F19/00 , H01F10/06 , Y10S428/928 , Y10S428/935 , Y10T428/12896 , Y10T428/1291 , Y10T428/12986
摘要： Plated ferromagnetic wire for wire memory, in which silvercopper alloy having precipitation-hardening property is used as the core wire. A method for manufacturing the plated ferromagnetic wire, wherein the core wire is heat-treated and coated with at least one layer of ferromagnetic material.
摘要翻译：作为芯线，使用具有析出硬化性的银 - 铜合金用的线记忆用电镀铁丝。一种制造电镀铁磁线的方法，其中芯线被热处理并涂覆有至少一层铁磁材料层。

55. 发明授权

US3905776A Method of making a thin, ferro-magnetic memory layer and article made thereby 失效
标题翻译：制造薄铁磁记忆层的方法和由此制成的制品
公开(公告)号：US3905776A
公开(公告)日：1975-09-16
申请号：US37685673
申请日：1973-07-05
申请人： NICO MAGNETICS INC
发明人： LONG KENNETH E , TAYLOR DAVID W
IPC分类号： C25D3/12 , G11B5/858 , H01F10/06 , B23P3/00 , G11C11/02 , G11C11/04
CPC分类号： H01F10/06 , C25D3/12 , G11B5/858 , Y10S205/922 , Y10S428/926 , Y10T428/12063 , Y10T428/12896
摘要： A ferromagnetic layer having high information density capabilities is deposited on a suitable substrate in a thin, continuous, uniform and coherent manner utilizing a process which involves providing the substrate with a conductive copper surface and electrodepositing a ferromagnetic layer of cobalt no greater than 20 microinches, on top of the copper. The cobalt is deposited in the form of hexagonal crystals from a bath of cobalt chloride buffered with a low molecular weight carboxylic acid in a pH range of between about 3.6 and 5.8. The cobalt electrodeposit is then covered with a suitable protective layer.
摘要翻译：具有高信息密度能力的铁磁层以薄的，连续的，均匀的和连贯的方式沉积在合适的衬底上，利用一种方法，该方法涉及向基体提供导电铜表面，并且电沉积不大于20微英寸的钴的铁磁性层，在铜的顶部。钴在六分之一晶体形式的沉积中由氯化钴缓冲的低分子量羧酸在约3.6和5.8之间的pH范围内沉积。然后用合适的保护层覆盖钴电沉积物。

56. 发明授权

US3804686A Process for making tunnel structure for plated wire 失效
标题翻译：制造电线隧道结构的工艺
公开(公告)号：US3804686A
公开(公告)日：1974-04-16
申请号：US24162872
申请日：1972-04-06
申请人： GOODYEAR AEROSPACE CORP
发明人： APICELLA A , TUMA W
IPC分类号： B01D45/12 , B04B7/14 , B04C5/18 , H01F10/06 , B32B31/28 , B32B31/10
CPC分类号： H01F10/06 , B01D45/12 , B04B7/14 , B04C5/18
摘要： The invention provides a tunnel structure for plated wire which permits precise alignment for plated wire and terminations so that automated bonding of the plated wire may be accomplished, and which will eliminate the use of forming wires during fabrication and hence reduce the scrap rate drastically, and which permits more rapid fabrication of tunnel structures.
摘要翻译：本发明提供了一种用于电镀线的隧道结构，其允许电镀线和终端的精确对准，使得可以实现电镀线的自动接合，并且这将在制造期间消除使用成形线，并因此大大降低废品率，以及这允许更快速地制造隧道结构。

57. 发明授权

US3788896A Method for producing bubble domains in magnetic film-substrate structures 失效
标题翻译：在磁性薄膜基体结构中生产泡罩的方法
公开(公告)号：US3788896A
公开(公告)日：1974-01-29
申请号：US3788896D
申请日：1970-12-28
申请人： NORTH AMERICAN ROCKWELL
发明人： MEE J , BESSER P
IPC分类号： H01F10/24 , H01F41/28 , H01F10/06
CPC分类号： H01F10/24 , H01F41/28
摘要： A METHOD FOR PRODUCING A BUBBLE DOMAIN IN AMAGNETIC SINGLE CRYSTLA GARNET FILM-SUBSTRATE STRUCTURE IS DISCLOSED. THE METHOD INVOLVES THE EPTIAXIAL DEPOSITION OF AN IRON GARNET FILM OF THE PROPER ORIENTATION AND HAVING A NEGATIVE MAGNETOSTRICTION CONSTANT ON A GARNET SUBSTRATE IN WHICH THE ROOM TEMPERATURE LATTICE CONTHE FILM IS LARGER THAN THE ROOM TEMPERATURE LATTICE CONSTANT OF THE SUBSTRATE BY AN AMOUNT GREATER THAN ABOUT 0.035 ANGATROM.

D R A W I N G

58. 发明授权

US3702991A Magnetic domain memory structure 失效
标题翻译：磁域记忆结构
公开(公告)号：US3702991A
公开(公告)日：1972-11-14
申请号：US3702991D
申请日：1971-03-30
申请人： TEXAS INSTRUMENTS INC
发明人： BATE ROBERT THOMAS , WEST FORREST GEROME JR
IPC分类号： G11C19/08 , H01F10/06 , H01L29/82 , G11C11/14 , G11C19/00
CPC分类号： G11C19/0866 , G11C19/08 , G11C19/085 , H01F10/06 , H01L29/82
摘要： A magnetic memory structure is disclosed that includes a plurality of insulated gate field effect transistors (IGFET''s) on one surface of a semiconductor substrate. A predetermined pattern of propagating material overlies the IGFET devices, and a layer of magnetic material capable of supporting cylindrical magnetic domains is mechanically attached to the structure to overlie the propagating material.

59. 发明授权

US3700500A Magnetic films having a predetermined coercivity 失效
标题翻译：具有预定协议的磁片
公开(公告)号：US3700500A
公开(公告)日：1972-10-24
申请号：US3700500D
申请日：1967-12-04
申请人： GEN ELECTRIC
发明人： RODBELL DONALD STANLEY , LOMMEL JAMES M
IPC分类号： H01F10/10 , H01F10/32 , H01F10/06
CPC分类号： B82Y25/00 , H01F10/10 , H01F10/32 , Y10S264/58 , Y10T428/1259 , Y10T428/12597 , Y10T428/12611 , Y10T428/12646 , Y10T428/12757 , Y10T428/12875 , Y10T428/12917
摘要： D R A W I N G
MAGNETIC FILMS HAVING A PREDETERMINED COERCIVITY ARE FORMED BY DISPOSING A VACUUM DEPOSITED, POLYCRYSTALLINE THIN MAGNETIC FILM OF IRON, COBALT OR NICKEL IN AN OXYGEN BEARING ATMOSPHERE AND SUBSEQUENTLY ANNEALING THE MAGNETIC FILM AT A TEMPERATURE BETWEEN 50*C. AND 600*C. FOR A SUFFICIENT PERIOD, E.G. BETWEEN 10 TO 300 MINUTES, TO INCREASE THE COERCIVITY OF THE MAGNETIC FILM TO A DESIRED VALUE WITHIN A FIXED RANGE. IN A SPECIFIC INSTANCE, A MONOTONIC INCREASE FROM 38.4 OERSTEDS TO 530 OERSTEDS WAS OBSERVED IN THE COERCIVE FORCE OF 300 A. THICK IRON FILM UPON A GLASS SUBSTRATE WHEN ANNEALED FOR 130 MINUTES AT A PRESSURE OF 5X10**-5 TORR. ANNEALING OF THE MAGNETIC FILMS GENERALLY WAS FOUND TO PRODUCE ONLY A FRACTIONAL DECREASE IN THE MAGNETIZATION OF THE FILMS.

60. 发明授权

US3685029A Magnetic memory member 失效
标题翻译：磁记忆会员
公开(公告)号：US3685029A
公开(公告)日：1972-08-15
申请号：US3685029D
申请日：1970-04-20
申请人： INTERN POUR L INF COMP
发明人： BLANCHARD JOSEPH LOUIS
IPC分类号： G11C19/08 , H01F10/06 , G11B5/00
CPC分类号： H01F10/06 , G11C19/0841
摘要： There is disclosed an improved structure of a binary information memory member made of thin layers and comprising magnetic domain propagation channels. This member includes a first thin layer of a soft magnetic anisotropic material coated with a second layer of a hard magnetic material, and the propagation channels are defined therein by providing non magnetic metallizations patterned according to the required propagation channels between the first and the second magnetic layers of the member.
摘要翻译：公开了由薄层制成并包括磁畴传播通道的二进制信息存储器件的改进结构。该构件包括涂覆有第二层硬磁材料的软磁各向异性材料的第一薄层，并且通过提供根据第一和第二磁性之间所需的传播通道图案化的非磁性金属化来限定传播通道成员的层。

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