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51. 发明授权

US5015323A Multi-tipped field-emission tool for nanostructure fabrication 失效
标题翻译：用于纳米结构制造的多点场致发射工具
公开(公告)号：US5015323A
公开(公告)日：1991-05-14
申请号：US419164
申请日：1989-10-10
申请人： Alan C. Gallagher
发明人： Alan C. Gallagher
IPC分类号： B82B3/00 , C23C16/04 , C30B25/02 , H01J37/073 , H01J37/317
CPC分类号： B82B3/00 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C23C16/047 , C23C16/45536 , C23C16/45544 , C30B25/02 , C30B29/06 , C30B29/42 , H01J37/073 , H01J37/3177 , H01J2237/0635 , H01J2237/30427 , H01J2237/31735 , Y10S977/707 , Y10S977/855 , Y10S977/856 , Y10S977/857 , Y10S977/875 , Y10S977/876 , Y10S977/878 , Y10S977/888
摘要： A tool consists of an array of field-emitting nanostructure probe tip extensions on the end of a metal probe. The probe is tapered to a long, narrow, flat end with typical dimensions of 1 cm.times.1 .mu.m. The probe tip extensions typically extend approximately 100 .ANG. beyond the probe surface and their ends are shaped to act as independent field-emission tips, each at an exact atomic location. These ends are a single crystal plane terminating in a single crystal unit plane cell having a central atom with a lower work function than the atoms surrounding the central atom. The nanostructures are spaced in a prescribed, repeating pattern with typical spacings on the order of 400 .ANG.. The probe voltage, current and position, as well as CVD or etching gas pressures, are sequentially adjusted to fabricate nanostructures on a nearby substrate, which is typically 10-30 .ANG. below the termination points of the probe tip extensions.
摘要翻译：工具由金属探针末端的场发射纳米结构探针尖端延伸阵列组成。探头锥形到长，窄，平的端部，典型尺寸为1厘米×1μm。探针尖端延伸部分通常在探针表面之外延伸约100安培角，其端部成形为独立的场致发射尖端，每个尖端位于精确的原子位置。这些端部是终止在具有比围绕中心原子的原子更低的功函数的中心原子的单晶单元平面单元中的单晶平面。纳米结构以规定的重复图案间隔开，典型的间距为400。依次调节探针电压，电流和位置以及CVD或蚀刻气体压力，以在附近的衬底上制造纳米结构，通常在探针尖端延伸部的终点下方为10-30安培。

52. 发明授权

US08689361B1 Method of making thin film probe tip for atomic force microscopy 失效
标题翻译：制造原子力显微镜薄膜探针头的方法
公开(公告)号：US08689361B1
公开(公告)日：2014-04-01
申请号：US13759465
申请日：2013-02-05
申请人： Salleh Ismail
发明人： Salleh Ismail
IPC分类号： G01Q60/38 , G01Q70/16 , G01Q60/24 , G01Q60/42
CPC分类号： G01Q60/38 , G01Q60/24 , G01Q60/40 , G01Q60/42 , G01Q70/16 , Y10S977/855 , Y10S977/863 , Y10S977/867
摘要： A probe for atomic force microscopy may be provided by depositing a thin film onto a wafer substrate and etching the substrate to leave the thin film behind in the form of a handle, a cantilever, and a probe tip in the cantilever. In some embodiments, a thin film substrate for the probe may be accomplished by forming the probe mold on a first wafer, bonding a second wafer onto the first wafer, and patterning out the second wafer to define the substrate for the probe on the first wafer. The thin film may be deposited onto the exposed portions of the first wafer. Thereafter, portions of the first and second wafers may be removed to leave behind the probe.
摘要翻译：用于原子力显微镜的探针可以通过将薄膜沉积到晶片衬底上并蚀刻衬底以将薄膜留在悬臂形式的手柄，悬臂和探针尖端的形式来提供。在一些实施例中，用于探针的薄膜基底可以通过在第一晶片上形成探针模具，将第二晶片结合到第一晶片上并且将第二晶片图案化以在第一晶片上限定用于探针的基板。薄膜可以沉积在第一晶片的暴露部分上。此后，可以去除第一和第二晶片的部分以留下探针。

53. 发明申请

US20130337642A1 METHODS AND DEVICES FOR FORMING NANOSTRUCTURE MONOLAYERS AND DEVICES INCLUDING SUCH MONOLAYERS 有权
标题翻译：用于形成纳米结构单层的方法和装置和包括这种单层的装置
公开(公告)号：US20130337642A1
公开(公告)日：2013-12-19
申请号：US13956483
申请日：2013-08-01
申请人： SanDisk 3D LLC
发明人： Jian Chen , Karen Chu Cruden , Xiangfeng Duan , Chao Liu , J. Wallace Parce
IPC分类号： H01L21/3105 , H01L21/28
CPC分类号： H01L21/28008 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L21/28229 , H01L21/28273 , H01L21/3105 , Y10S977/774 , Y10S977/782 , Y10S977/845 , Y10S977/855 , Y10S977/89 , Y10S977/891
摘要： Methods for forming or patterning nanostructure arrays are provided. The methods involve formation of arrays on coatings comprising nanostructure association groups, formation of arrays in spin-on-dielectrics, solvent annealing after nanostructure deposition, patterning using resist, and/or use of devices that facilitate array formation. Related devices for forming nanostructure arrays are also provided, as are devices including nanostructure arrays (e.g., memory devices).
摘要翻译：提供了形成或构图纳米结构阵列的方法。所述方法包括在包含纳米结构缔合基团，自旋电介质中阵列形成，纳米结构沉积后的溶剂退火，使用抗蚀剂图案化和/或使用促进阵列形成的器件的涂层上形成阵列。还提供了用于形成纳米结构阵列的相关器件，以及包括纳米结构阵列（例如，存储器件）的器件。

54. 发明授权

US08507390B2 Methods and devices for forming nanostructure monolayers and devices including such monolayers 有权
标题翻译：用于形成纳米结构单层的方法和装置以及包括这种单层的装置
公开(公告)号：US08507390B2
公开(公告)日：2013-08-13
申请号：US12803568
申请日：2010-06-29
申请人： Jian Chen , Karen Chu Cruden , Xiangfeng Duan , Chao Liu , J. Wallace Parce
发明人： Jian Chen , Karen Chu Cruden , Xiangfeng Duan , Chao Liu , J. Wallace Parce
IPC分类号： H01L21/3105
CPC分类号： H01L21/28008 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L21/28229 , H01L21/28273 , H01L21/3105 , Y10S977/774 , Y10S977/782 , Y10S977/845 , Y10S977/855 , Y10S977/89 , Y10S977/891
摘要： Methods for forming or patterning nanostructure arrays are provided. The methods involve formation of arrays on coatings comprising nanostructure association groups, formation of arrays in spin-on-dielectrics, solvent annealing after nanostructure deposition, patterning using resist, and/or use of devices that facilitate array formation. Related devices for forming nanostructure arrays are also provided, as are devices including nanostructure arrays (e.g., memory devices).
摘要翻译：提供了形成或构图纳米结构阵列的方法。所述方法包括在包含纳米结构缔合基团，自旋电介质中阵列形成，纳米结构沉积后的溶剂退火，使用抗蚀剂图案化和/或使用促进阵列形成的器件的涂层上形成阵列。还提供了用于形成纳米结构阵列的相关器件，以及包括纳米结构阵列（例如，存储器件）的器件。

55. 发明申请

US20110297084A1 Apparatus for Direct Fabrication of Nanostructures 审中-公开
标题翻译：用于直接制造纳米结构的装置
公开(公告)号：US20110297084A1
公开(公告)日：2011-12-08
申请号：US13210318
申请日：2011-08-15
申请人： Brian Hubert , Joseph Jacobson , Aggelos Bletsas
发明人： Brian Hubert , Joseph Jacobson , Aggelos Bletsas
IPC分类号： B05C1/00 , B05C11/00 , B82Y99/00
CPC分类号： B82B3/00 , G03F7/0002 , Y10S977/849 , Y10S977/85 , Y10S977/851 , Y10S977/855 , Y10S977/86
摘要： An all-additive apparatus for direct fabrication of nanometer-scale planar and multilayer structures that performs “pick-and-place” retrieval and deposition of materials comprises a tip and a controller and transport mechanism configured for causing the tip to acquire a transferable material and deposit at least a portion of the acquired transferable material at a predetermined location onto a substrate, without the use of a bridging medium, in order to directly assemble a structure. The tip may be submillimeter-scale, may comprise a plurality of sub-tips disposed in a predetermined arrangement, and/or may mechanically vibrate. Mechanical vibration of the tip may be monitored. The tip may acquire the transferable material from a reservoir. The assembled structure may be cured on the substrate.
摘要翻译：用于直接制造纳米级平面和多层结构的全添加装置，其执行材料的“拾取和放置”取出和沉积，包括尖端和配置用于使尖端获得可转移材料的控制器和输送机构，将所获得的可转移材料的至少一部分在预定位置沉积到基板上，而不使用桥接介质，以便直接组装结构。尖端可以是亚毫米级的，可以包括以预定布置设置的多个子尖端和/或可以机械振动。可以监测尖端的机械振动。尖端可以从储存器获取可转移材料。组装的结构可以在基底上固化。

56. 发明授权

US07998528B2 Method for direct fabrication of nanostructures 有权
标题翻译：直接制造纳米结构的方法
公开(公告)号：US07998528B2
公开(公告)日：2011-08-16
申请号：US10367616
申请日：2003-02-14
申请人： Brian Hubert , Joseph Jacobson , Aggelos Bletsas
发明人： Brian Hubert , Joseph Jacobson , Aggelos Bletsas
IPC分类号： B05D5/00 , B05D7/00 , B05D1/34 , B05D1/36
CPC分类号： B82B3/00 , G03F7/0002 , Y10S977/849 , Y10S977/85 , Y10S977/851 , Y10S977/855 , Y10S977/86
摘要： An all-additive method for direct fabrication of nanometer-scale planar and multilayer structures comprises the steps of acquiring a transferable material with a submillimeter-scale tip, depositing at least a portion of the acquired first transferable material at a predetermined location onto a substrate without a bridging medium, and repeating to create a structure using the transferable material.
摘要翻译：用于直接制造纳米尺度平面和多层结构的全加法方法包括以下步骤：用亚毫米级尖端获取可转移材料，将获取的第一可转移材料的至少一部分在预定位置沉积到基底上，而无需桥接介质，并重复使用可转移材料产生结构。

57. 发明申请

US20110081526A1 PATTERNING OF SOLID STATE FEATURES BY DIRECT WRITE NANOLITHOGRAPHIC PRINTING 审中-公开
标题翻译：通过直写写纳印刷印刷固体状态特征
公开(公告)号：US20110081526A1
公开(公告)日：2011-04-07
申请号：US12898416
申请日：2010-10-05
申请人： Chad A. Mirkin , Vinayak P. Dravid , Ming Su , Xiaogang Liu
发明人： Chad A. Mirkin , Vinayak P. Dravid , Ming Su , Xiaogang Liu
IPC分类号： B32B3/10 , B05D5/12 , B82Y40/00 , B82Y30/00
CPC分类号： B82B3/00 , B82Y10/00 , B82Y30/00 , B82Y40/00 , G03F7/0002 , Y10S977/855 , Y10S977/857 , Y10T428/24802 , Y10T428/24926 , Y10T428/265
摘要： The present invention includes a method of fabricating organic/inorganic composite nanostructures on a substrate comprising depositing a solution having a block copolymer and an inorganic precursor on the substrate using dip pen nanolithography. The nanostructures comprises arrays of lines and/or dots having widths/diameters less than 1 micron. The present invention also includes a device comprising an organic/inorganic composite nanoscale region chemically bonded to a substrate, wherein the nanoscale region, wherein the nanoscale region has a nanometer scale dimension other than height.
摘要翻译：本发明包括在衬底上制造有机/无机复合纳米结构的方法，其包括使用浸渍笔纳米光刻法在衬底上沉积具有嵌段共聚物和无机前体的溶液。纳米结构包括具有小于1微米的宽度/直径的线和/或点的阵列。本发明还包括一种包括化学键合到基底上的有机/无机复合纳米尺度区域的器件，其中所述纳米尺度区域，其中所述纳米尺度区域具有除了高度之外的纳米尺度尺寸。

58. 发明申请

US20110020533A1 SCANNING PROBE-BASED LITHOGRAPHY METHOD 失效
标题翻译：基于扫描探针的LITHOGRAPHY方法
公开(公告)号：US20110020533A1
公开(公告)日：2011-01-27
申请号：US12899817
申请日：2010-10-07
申请人： Michel Despont , Urs T. Duerig , Jane E. Frommer , Bernd W. Gotsmann , James L. Hedrick , Craig Jon Hawker , Robert D. Miller
发明人： Michel Despont , Urs T. Duerig , Jane E. Frommer , Bernd W. Gotsmann , James L. Hedrick , Craig Jon Hawker , Robert D. Miller
IPC分类号： B05D3/00 , B29C59/00
CPC分类号： G03F7/0002 , G01Q80/00 , Y10S977/849 , Y10S977/85 , Y10S977/851 , Y10S977/855 , Y10S977/857
摘要： A resist medium in which features are lithographically produced by scanning a surface of the medium with an AFM probe positioned in contact therewith. The resist medium comprises a substrate; and a polymer resist layer within which features are produced by mechanical action of the probe. The polymer contains thermally reversible crosslinkages. Also disclosed are methods that generally includes scanning a surface of the polymer resist layer with an AFM probe positioned in contact with the resist layer, wherein heating the probe and a squashing-type mechanical action of the probe produces features in the layer by thermally reversing the crosslinkages.
摘要翻译：抗蚀剂介质，其特征是通过用与其接触的AFM探针扫描介质的表面来光刻制造。抗蚀剂介质包括基底; 以及聚合物抗蚀剂层，其中通过探针的机械作用产生特征。聚合物含有热可逆交联。还公开了通常包括用定位成与抗蚀剂层接触的AFM探针扫描聚合物抗蚀剂层的表面的方法，其中加热探针和探针的挤压型机械作用通过热反转来产生该层中的特征交联。

59. 发明授权

US07799291B2 Apparatus for synthesis of ZnO nano-structured materials 有权
标题翻译： ZnO纳米结构材料的合成装置
公开(公告)号：US07799291B2
公开(公告)日：2010-09-21
申请号：US11725439
申请日：2007-03-20
申请人： Jae-Hwan Park , Heon-Jin Choi , Jae-Gwan Park
发明人： Jae-Hwan Park , Heon-Jin Choi , Jae-Gwan Park
IPC分类号： B01J19/08 , C23C16/00
CPC分类号： C01G9/03 , B01J6/00 , B01J2219/00063 , B01J2219/00135 , B01J2219/00186 , B01J2219/182 , B01J2219/1923 , B01J2219/1943 , B82Y30/00 , C01P2004/64 , C23C14/0021 , C23C14/086 , C23C14/228 , C23C14/243 , Y10S977/755 , Y10S977/762 , Y10S977/811 , Y10S977/84 , Y10S977/855
摘要： An apparatus for fabricating ZnO nanostructures includes a heating element, a horizontal reaction tube having an inlet and an outlet. The reaction tube is positioned inside the interior cavity of the heating element with the inlet disposed to introduce a carrier gas into the reaction tube. The apparatus includes a source of a carrier gas in flow communication with the inlet, a container within the reaction tube that is disposed to receive and contain source materials comprising ZnO and graphite. An array of solid substrates is located on the container above the source materials. Adjacent substrates in the array are positioned with a space in between to allow the carrier gas to impinge on the source materials in the container.
摘要翻译：一种用于制造ZnO纳米结构的装置包括加热元件，具有入口和出口的水平反应管。反应管位于加热元件的内腔内部，入口设置成将载气引入反应管中。该装置包括与入口流动连通的载气源，反应管内的容器，其设置成容纳并容纳包含ZnO和石墨的源材料。固体基质阵列位于源材料上方的容器上。阵列中的相邻衬底被定位成在其间具有空间，以允许载气撞击容器中的源材料。

60. 发明申请

US20090255465A1 THERMAL CONTROL OF DEPOSITION IN DIP PEN NANOLITHOGRAPHY 审中-公开
标题翻译： DIP PEN纳米尺度沉积的热控制
公开(公告)号：US20090255465A1
公开(公告)日：2009-10-15
申请号：US12475837
申请日：2009-06-01
申请人： Paul E. Sheehan , Lloyd J. Whitman , William P. King
发明人： Paul E. Sheehan , Lloyd J. Whitman , William P. King
IPC分类号： B05C11/00
CPC分类号： G03F7/0002 , G01Q80/00 , Y10S977/849 , Y10S977/851 , Y10S977/855 , Y10S977/857
摘要： The present invention describes an apparatus for nanolithography and a process for thermally controlling the deposition of a solid organic “ink” from the tip of an atomic force microscope to a substrate. The invention may be used to turn deposition of the ink to the substrate on or off by either raising its temperature above or lowing its temperature below the ink's melting temperature. This process may be useful as it allows ink deposition to be turned on and off and the deposition rate to change without the tip breaking contact with the substrate. The same tip can then be used for imaging purposes without fear of contamination. This invention can allow ink to be deposited in a vacuum enclosure, and can also allow for greater spatial resolution as the inks used have lower surface mobilities once cooled than those used in other nanolithography methods.
摘要翻译：本发明描述了用于纳米光刻的装置和用于热控制固体有机“墨”从原子力显微镜的尖端沉积到基底上的方法。本发明可以用于通过将其温度升高到或低于其低于墨水的熔融温度的温度来将油墨沉积到基底上开启或关闭。该方法可能是有用的，因为其允许油墨沉积被打开和关闭，并且沉积速率在没有尖端与基材断开接触的情况下改变。然后可以将相同的尖端用于成像目的，而不用担心污染。本发明可以允许油墨沉积在真空外壳中，并且还可以允许更大的空间分辨率，因为所使用的油墨一旦冷却而具有比在其它纳米光刻方法中使用的更低的表面迁移率。

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