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51. 发明授权

US3633269A Method of making contact to semiconductor devices 失效
标题翻译：制造与半导体器件接触的方法
公开(公告)号：US3633269A
公开(公告)日：1972-01-11
申请号：US3633269D
申请日：1969-06-24
申请人： TELEFUNKEN PATENT
发明人： BACHMEIER ALFRED
IPC分类号： H01L23/485 , B01J17/00 , H01L5/00
CPC分类号： H01L23/485 , H01L2924/0002 , Y10S438/951 , H01L2924/00
摘要： The disclosure relates to a method of making contact with semiconductor devices by applying a metal layer, e.g. nickel or aluminum, onto an insulating layer, e.g. silicon dioxide, on the semiconductor material and onto the surface of the semiconductor material itself through windows in the insulating material and removing the part of the metal layer applied to the insulating layer by means of an adhesive strip, the metal layer having been treated, during or after its application, by heat to render it more firmly bonded to the semiconductor material than to the insulating layer.
摘要翻译：本公开涉及通过施加金属层来与半导体器件接触的方法，例如，镍或铝，在绝缘层上，例如二氧化硅，并且通过绝缘材料中的窗口在半导体材料本身上和半导体材料本身的表面上，并且通过粘合带去除施加到绝缘层的金属层的部分，该金属层在或者在其应用之后，通过加热使其比绝缘层更牢固地结合到半导体材料。

52. 发明授权

US08133775B2 Semiconductor device with mushroom electrode and manufacture method thereof 有权
标题翻译：具有蘑菇电极的半导体器件及其制造方法
公开(公告)号：US08133775B2
公开(公告)日：2012-03-13
申请号：US12985742
申请日：2011-01-06
申请人： Kozo Makiyama , Naoya Ikechi , Takahiro Tan
发明人： Kozo Makiyama , Naoya Ikechi , Takahiro Tan
IPC分类号： H01L21/338 , H01L21/28 , H01L21/44 , H01L21/302
CPC分类号： H01L21/0274 , H01L21/28114 , H01L21/28264 , H01L21/28587 , H01L29/42316 , H01L29/42376 , H01L29/517 , H01L29/66462 , H01L29/66871 , H01L29/78 , Y10S430/143 , Y10S438/949 , Y10S438/95 , Y10S438/951
摘要： A semiconductor device has: a semiconductor substrate having a pair of current input/output regions via which current flows; an insulating film formed on the semiconductor substrate and having a gate electrode opening; and a mushroom gate electrode structure formed on the semiconductor substrate via the gate electrode opening, the mushroom gate electrode structure having a stem and a head formed on the stem, the stem having a limited size on the semiconductor substrate along a current direction and having a forward taper shape upwardly and monotonically increasing the size along the current direction, the head having a size expanded stepwise along the current direction, and the stem contacting the semiconductor substrate in the gate electrode opening and riding the insulating film near at a position of at least one of opposite ends of the stem along the current direction.
摘要翻译：半导体器件具有：半导体衬底，具有电流流过的一对电流输入/输出区域; 形成在所述半导体基板上并具有栅电极开口的绝缘膜; 以及通过所述栅电极开口形成在所述半导体基板上的蘑菇栅极电极结构，所述蘑菇栅电极结构具有杆和形成在所述杆上的头部，所述杆在所述半导体衬底上沿着电流方向具有有限的尺寸，并且具有向前锥形形状向上并沿着电流方向单调地增加尺寸，头部具有沿着电流方向逐步扩大的尺寸，并且杆在栅极电极开口中接触半导体衬底并且在至少一个位置附近骑绝缘膜杆的相对端之一沿着当前方向。

53. 发明申请

US20110266494A1 Stripper Solution and Method of Manufacturing Liquid Crystal Display Using the Same 审中-公开
标题翻译：剥离剂溶液及使用其的液晶显示器的制造方法
公开(公告)号：US20110266494A1
公开(公告)日：2011-11-03
申请号：US13151845
申请日：2011-06-02
申请人： Soon Sung Yoo , Oh Nam Kwon , Heung Lyul Cho
发明人： Soon Sung Yoo , Oh Nam Kwon , Heung Lyul Cho
IPC分类号： C09K13/00
CPC分类号： H01L27/1288 , H01L27/1214 , Y10S438/951
摘要： A method for manufacturing a liquid crystal display includes simultaneously forming a gate electrode and a gate bus line on a transparent dielectric substrate, simultaneously forming a channel layer, an ohmic contact layer, and source/drain electrodes by forming a gate insulation film, an amorphous silicon film, a doped amorphous silicon film, and a metal film on the transparent dielectric substrate on which the gate electrode and the gate bus line are formed and etching the metal film, the amorphous silicon film, and the doped amorphous silicon film, and forming a pixel electrode by forming a protective film and a transparent metal film on the transparent dielectric substrate upon which the source/drain electrodes are formed and finely etching the transparent metal film through a lift-off process using a stripper solution.
摘要翻译：液晶显示器的制造方法包括：在透明电介质基板上同时形成栅极电极和栅极总线，同时形成沟道层，欧姆接触层，源极/漏极，形成栅极绝缘膜，硅膜，掺杂非晶硅膜和金属膜，在其上形成栅极电极和栅极总线的透明介质基板上蚀刻金属膜，非晶硅膜和掺杂非晶硅膜，并形成通过在形成源/漏电极的透明电介质基板上形成保护膜和透明金属膜，并通过使用剥离剂溶液的剥离工艺对透明金属膜进行微细蚀刻来形成像素电极。

54. 发明授权

US07977250B2 Stripper solution and method of manufacturing liquid crystal display using the same 有权
标题翻译：剥离剂溶液和使用其制造液晶显示器的方法
公开(公告)号：US07977250B2
公开(公告)日：2011-07-12
申请号：US12837313
申请日：2010-07-15
申请人： Soon Sung Yoo , Oh Nam Kwon , Heung Lyul Cho
发明人： Soon Sung Yoo , Oh Nam Kwon , Heung Lyul Cho
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L27/1288 , H01L27/1214 , Y10S438/951
摘要： A method for manufacturing a liquid crystal display includes simultaneously forming a gate electrode and a gate bus line on a transparent dielectric substrate, simultaneously forming a channel layer, an ohmic contact layer, and source/drain electrodes by forming a gate insulation film, an amorphous silicon film, a doped amorphous silicon film, and a metal film on the transparent dielectric substrate on which the gate electrode and the gate bus line are formed and etching the metal film, the amorphous silicon film, and the doped amorphous silicon film, and forming a pixel electrode by forming a protective film and a transparent metal film on the transparent dielectric substrate upon which the source/drain electrodes are formed and finely etching the transparent metal film through a lift-off process using a stripper solution.
摘要翻译：液晶显示器的制造方法包括：在透明电介质基板上同时形成栅极电极和栅极总线，同时形成沟道层，欧姆接触层，源极/漏极，形成栅极绝缘膜，硅膜，掺杂非晶硅膜和金属膜，在其上形成栅极电极和栅极总线的透明介质基板上蚀刻金属膜，非晶硅膜和掺杂非晶硅膜，并形成通过在形成源/漏电极的透明电介质基板上形成保护膜和透明金属膜，并通过使用剥离剂溶液的剥离工艺对透明金属膜进行微细蚀刻来形成像素电极。

55. 发明申请

US20110165705A1 Method for Fabricating LED Chip Comprising Reduced Mask Count and Lift-Off Processing 有权
标题翻译：制造LED芯片的方法包括减少掩模计数和剥离处理
公开(公告)号：US20110165705A1
公开(公告)日：2011-07-07
申请号：US13046606
申请日：2011-03-11
申请人： Kuo-Lung Fang , Chien-Sen Weng , Chih-Wei Chao
发明人： Kuo-Lung Fang , Chien-Sen Weng , Chih-Wei Chao
IPC分类号： H01L33/36
CPC分类号： H01L33/44 , H01L33/387 , Y10S438/951
摘要： A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting diode chip. In the present invention, some components may also be simultaneously formed by an identical process to reduce the process steps of the light emitting diode chip. Consequently, the fabricating method of the light emitting diode provided in the present invention reduces the cost and time for the fabrication of the light emitting diode.
摘要翻译：提供一种制造发光二极管芯片的方法。在该方法中，应用半色调掩模处理，灰度色调处理或多色调掩模处理，并与剥离处理相结合，以进一步减少发光二极管芯片的处理步骤。在本发明中，一些部件也可以通过相同的工艺同时形成，以减少发光二极管芯片的工艺步骤。因此，本发明中提供的发光二极管的制造方法降低了用于制造发光二极管的成本和时间。

56. 发明申请

US20110159614A1 Method for Fabricating LED Chip Comprising Reduced Mask Count and Lift-Off Processing 有权
公开(公告)号：US20110159614A1
公开(公告)日：2011-06-30
申请号：US13046632
申请日：2011-03-11
申请人： Kuo-Lung Fang , Chien-Sen Weng , Chih-Wei Chao
发明人： Kuo-Lung Fang , Chien-Sen Weng , Chih-Wei Chao
IPC分类号： H01L33/48
CPC分类号： H01L33/44 , H01L33/387 , Y10S438/951
摘要： A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting diode chip. In the present invention, some components may also be simultaneously formed by an identical process to reduce the process steps of the light emitting diode chip. Consequently, the fabricating method of the light emitting diode provided in the present invention reduces the cost and time for the fabrication of the light emitting diode.

57. 发明申请

US20110096270A1 METHOD OF PATTERNING TRANSPARENT CONDUCTIVE FILM, THIN FILM TRANSISTOR SUBSTRATE USING THE SAME AND FABRICATING METHOD THEREOF 有权
标题翻译：透明透明膜的方法，使用其的薄膜晶体管衬底及其制造方法
公开(公告)号：US20110096270A1
公开(公告)日：2011-04-28
申请号：US12982682
申请日：2010-12-30
申请人： Byung Chul Ahn , Byoung Ho Lim , Byeong Dae Choi
发明人： Byung Chul Ahn , Byoung Ho Lim , Byeong Dae Choi
IPC分类号： G02F1/1333 , H01L29/786
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/2022 , H01L21/76838 , H01L27/1214 , H01L27/1255 , H01L27/1277 , H01L27/1288 , H01L29/66765 , H01L29/78603 , Y10S438/951
摘要： A method of patterning a transparent conductive film adaptive for selectively etching a transparent conductive film without any mask processes, a thin film transistor for a display device using the same and a fabricating method thereof are disclosed. In the method of patterning the transparent conductive film, an inorganic material substrate is prepared. An organic material pattern is formed at a desired area of the inorganic material substrate. A thin film having a different crystallization rate depending upon said inorganic material and said organic material is formed. The thin film is selectively etched in accordance with said crystallization rate.
摘要翻译：公开了一种适合于选择性地蚀刻透明导电膜而不需要任何掩模工艺的透明导电膜的图案化方法，用于使用其的显示装置用薄膜晶体管及其制造方法。在透明导电膜的图案化方法中，制备无机材料基板。有机材料图案形成在无机材料基板的所需区域。形成根据所述无机材料和所述有机材料具有不同结晶速率的薄膜。根据所述结晶速率选择性地蚀刻薄膜。

58. 发明授权

US07858412B2 Thin-film transistor substrate and method of fabricating the same 有权
标题翻译：薄膜晶体管基板及其制造方法
公开(公告)号：US07858412B2
公开(公告)日：2010-12-28
申请号：US12498534
申请日：2009-07-07
申请人： Joo-Han Kim , Ki-Hun Jeong , Seung-Hwan Shim
发明人： Joo-Han Kim , Ki-Hun Jeong , Seung-Hwan Shim
IPC分类号： H01L21/3213 , H01L21/336
CPC分类号： H01L27/12 , H01L27/124 , H01L27/1248 , H01L27/1288 , Y10S438/951
摘要： A thin-film transistor (“TFT”) substrate and a method of fabricating the same include: an insulating substrate; gate wiring which is disposed on the insulating substrate and includes a gate line and a gate electrode; a semiconductor pattern which is disposed on the gate electrode; data wiring which is disposed on the semiconductor pattern and includes a data line, a source electrode, and a drain electrode; a passivation layer which includes a first sub-passivation layer and a second sub-passivation layer deposited on the data wiring; and a pixel electrode which is electrically connected to the drain electrode through a contact hole disposed in the passivation layer, wherein the second sub-passivation layer has a lower density than the first sub-passivation layer.
摘要翻译：薄膜晶体管（“TFT”）基板及其制造方法包括：绝缘基板; 栅极布线，其布置在所述绝缘基板上并且包括栅极线和栅电极; 设置在栅电极上的半导体图案; 数据布线，其布置在半导体图案上并且包括数据线，源电极和漏电极; 钝化层，其包括沉积在数据布线上的第一子钝化层和第二子钝化层; 以及通过设置在所述钝化层中的接触孔电连接到所述漏电极的像素电极，其中所述第二子钝化层具有比所述第一子钝化层更低的密度。

59. 发明授权

US07588971B2 Method of fabricating vertical thin film transistor 有权
公开(公告)号：US07588971B2
公开(公告)日：2009-09-15
申请号：US11778668
申请日：2007-07-17
申请人： Yi-Kai Wang , Tsung-Hsien Lin , Tarng-Shiang Hu , Yu-Yuan Shen
发明人： Yi-Kai Wang , Tsung-Hsien Lin , Tarng-Shiang Hu , Yu-Yuan Shen
IPC分类号： H01L29/786 , H01L21/84
CPC分类号： H01L51/057 , Y10S438/944 , Y10S438/951
摘要： A method of fabricating a vertical thin film transistor (vertical TFT) is disclosed, wherein a shadow mask is used to fabricate the TFT device in vertical structure. First, a metal layer is formed, which serves as ribs and a gate layer. Next, a shadow mask is disposed on the gate layer. Afterwards, the shadow mask is used as a mask to form a source layer, an organic semiconductor layer and a drain layer. Thus, the process is simplified. Since no photolithography process is required, and therefore damage of the organic semiconductor layer is avoided and a vertical TFT with desired electrical characteristics may be obtained.

60. 发明申请

US20080166838A1 MANUFACTURING METHODS OF METAL WIRE, ELECTRODE AND TFT ARRAY SUBSTRATE 有权
标题翻译：金属线，电极和TFT阵列基板的制造方法
公开(公告)号：US20080166838A1
公开(公告)日：2008-07-10
申请号：US11958634
申请日：2007-12-18
申请人： Chunping Long , Xinxin Li
发明人： Chunping Long , Xinxin Li
IPC分类号： H01L21/00
CPC分类号： H01L27/124 , Y10S438/951
摘要： A method of forming a gate line and gate electrode and a method of manufacturing a TFT array substrate. The metal gate line and gate electrode can be formed by: providing a substrate, forming a photoresist layer on the substrate, a photoresist pattern being formed complementary with that of the gate line and gate electrode, forming a metal Cu thin film or a composite thin film comprising a metal Cu thin film on the substrate, and removing the photoresist pattern and the metal Cu thin film or composite thin film comprising the metal Cu thin film formed thereon from the substrate.
摘要翻译：一种形成栅极线和栅电极的方法和制造TFT阵列基板的方法。金属栅极线和栅电极可以通过以下方式形成：提供衬底，在衬底上形成光致抗蚀剂层，形成与栅极线和栅电极互补的光致抗蚀剂图案，形成金属Cu薄膜或复合薄膜在基板上包含金属Cu薄膜的薄膜，以及从基板上去除其上形成有金属Cu薄膜的光刻胶图案和金属Cu薄膜或复合薄膜。

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