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1. 发明授权

US08373339B2 Method of patterning transparent conductive film, thin film transistor substrate using the same and fabricating method thereof 有权
标题翻译：透明导电膜的构图方法，使用其的薄膜晶体管基板及其制造方法
公开(公告)号：US08373339B2
公开(公告)日：2013-02-12
申请号：US12982682
申请日：2010-12-30
申请人： Byung Chul Ahn , Byoung Ho Lim , Byeong Dae Choi
发明人： Byung Chul Ahn , Byoung Ho Lim , Byeong Dae Choi
IPC分类号： H01L29/10
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/2022 , H01L21/76838 , H01L27/1214 , H01L27/1255 , H01L27/1277 , H01L27/1288 , H01L29/66765 , H01L29/78603 , Y10S438/951
摘要： A method of patterning a transparent conductive film adaptive for selectively etching a transparent conductive film without any mask processes, a thin film transistor for a display device using the same and a fabricating method thereof are disclosed. In the method of patterning the transparent conductive film, an inorganic material substrate is prepared. An organic material pattern is formed at a desired area of the inorganic material substrate. A thin film having a different crystallization rate depending upon said inorganic material and said organic material is formed. The thin film is selectively etched in accordance with said crystallization rate.
摘要翻译：公开了一种适合于选择性地蚀刻透明导电膜而不需要任何掩模工艺的透明导电膜的图案化方法，用于使用其的显示装置用薄膜晶体管及其制造方法。在透明导电膜的图案化方法中，制备无机材料基板。有机材料图案形成在无机材料基板的所需区域。形成根据所述无机材料和所述有机材料具有不同结晶速率的薄膜。根据所述结晶速率选择性地蚀刻薄膜。

2. 发明授权

US07887710B2 Method of patterning transparent conductive film, thin film transistor substrate using the same and fabricating method thereof 有权
标题翻译：透明导电膜的构图方法，使用其的薄膜晶体管基板及其制造方法
公开(公告)号：US07887710B2
公开(公告)日：2011-02-15
申请号：US11987369
申请日：2007-11-29
申请人： Byung Chul Ahn , Byoung Ho Lim , Byeong Dae Choi
发明人： Byung Chul Ahn , Byoung Ho Lim , Byeong Dae Choi
IPC分类号： B44C1/22
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/2022 , H01L21/76838 , H01L27/1214 , H01L27/1255 , H01L27/1277 , H01L27/1288 , H01L29/66765 , H01L29/78603 , Y10S438/951
摘要： A method of patterning a transparent conductive film adaptive for selectively etching a transparent conductive film without any mask processes, a thin film transistor for a display device using the same and a fabricating method thereof are disclosed. In the method of patterning the transparent conductive film, an inorganic material substrate is prepared. An organic material pattern is formed at a desired area of the inorganic material substrate. A thin film having a different crystallization rate depending upon said inorganic material and said organic material is formed. The thin film is selectively etched in accordance with said crystallization rate.
摘要翻译：公开了一种适合于选择性地蚀刻透明导电膜而不需要任何掩模工艺的透明导电膜的图案化方法，用于使用其的显示装置用薄膜晶体管及其制造方法。在透明导电膜的图案化方法中，制备无机材料基板。有机材料图案形成在无机材料基板的所需区域。形成根据所述无机材料和所述有机材料具有不同结晶速率的薄膜。根据所述结晶速率选择性地蚀刻薄膜。

3. 发明申请

US20110096270A1 METHOD OF PATTERNING TRANSPARENT CONDUCTIVE FILM, THIN FILM TRANSISTOR SUBSTRATE USING THE SAME AND FABRICATING METHOD THEREOF 有权
标题翻译：透明透明膜的方法，使用其的薄膜晶体管衬底及其制造方法
公开(公告)号：US20110096270A1
公开(公告)日：2011-04-28
申请号：US12982682
申请日：2010-12-30
申请人： Byung Chul Ahn , Byoung Ho Lim , Byeong Dae Choi
发明人： Byung Chul Ahn , Byoung Ho Lim , Byeong Dae Choi
IPC分类号： G02F1/1333 , H01L29/786
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/2022 , H01L21/76838 , H01L27/1214 , H01L27/1255 , H01L27/1277 , H01L27/1288 , H01L29/66765 , H01L29/78603 , Y10S438/951
摘要： A method of patterning a transparent conductive film adaptive for selectively etching a transparent conductive film without any mask processes, a thin film transistor for a display device using the same and a fabricating method thereof are disclosed. In the method of patterning the transparent conductive film, an inorganic material substrate is prepared. An organic material pattern is formed at a desired area of the inorganic material substrate. A thin film having a different crystallization rate depending upon said inorganic material and said organic material is formed. The thin film is selectively etched in accordance with said crystallization rate.
摘要翻译：公开了一种适合于选择性地蚀刻透明导电膜而不需要任何掩模工艺的透明导电膜的图案化方法，用于使用其的显示装置用薄膜晶体管及其制造方法。在透明导电膜的图案化方法中，制备无机材料基板。有机材料图案形成在无机材料基板的所需区域。形成根据所述无机材料和所述有机材料具有不同结晶速率的薄膜。根据所述结晶速率选择性地蚀刻薄膜。

4. 发明申请

US20080164472A1 Method of patterning transparent conductive film, thin film transistor substrate using the same and fabricating method thereof 有权
公开(公告)号：US20080164472A1
公开(公告)日：2008-07-10
申请号：US11987369
申请日：2007-11-29
申请人： Byung Chul Ahn , Byoung Ho Lim , Byeong Dae Choi
发明人： Byung Chul Ahn , Byoung Ho Lim , Byeong Dae Choi
IPC分类号： G03F7/00 , C23F1/00 , B05D5/12 , G02F1/1333 , H01L31/00
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/2022 , H01L21/76838 , H01L27/1214 , H01L27/1255 , H01L27/1277 , H01L27/1288 , H01L29/66765 , H01L29/78603 , Y10S438/951
摘要： A method of patterning a transparent conductive film adaptive for selectively etching a transparent conductive film without any mask processes, a thin film transistor for a display device using the same and a fabricating method thereof are disclosed. In the method of patterning the transparent conductive film, an inorganic material substrate is prepared. An organic material pattern is formed at a desired area of the inorganic material substrate. A thin film having a different crystallization rate depending upon said inorganic material and said organic material is formed. The thin film is selectively etched in accordance with said crystallization rate.

5. 发明授权

US07316784B2 Method of patterning transparent conductive film, thin film transistor substrate using the same and fabricating method thereof 有权
标题翻译：透明导电膜的构图方法，使用其的薄膜晶体管基板及其制造方法
公开(公告)号：US07316784B2
公开(公告)日：2008-01-08
申请号：US10774701
申请日：2004-02-10
申请人： Byung Chul Ahn , Byoung Ho Lim , Byeong Dae Choi
发明人： Byung Chul Ahn , Byoung Ho Lim , Byeong Dae Choi
IPC分类号： H01L21/302
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/2022 , H01L21/76838 , H01L27/1214 , H01L27/1255 , H01L27/1277 , H01L27/1288 , H01L29/66765 , H01L29/78603 , Y10S438/951
摘要： A method of patterning a transparent conductive film adaptive for selectively etching a transparent conductive film without any mask processes, a thin film transistor for a display device using the same and a fabricating method thereof are disclosed. In the method of patterning the transparent conductive film, an inorganic material substrate is prepared. An organic material pattern is formed at a desired area of the inorganic material substrate. A thin film having a different crystallization rate depending upon said inorganic material and said organic material is formed. The thin film is selectively etched in accordance with said crystallization rate.
摘要翻译：公开了一种适合于选择性地蚀刻透明导电膜而不需要任何掩模工艺的透明导电膜的图案化方法，用于使用其的显示装置用薄膜晶体管及其制造方法。在透明导电膜的图案化方法中，制备无机材料基板。有机材料图案形成在无机材料基板的所需区域。形成根据所述无机材料和所述有机材料具有不同结晶速率的薄膜。根据所述结晶速率选择性地蚀刻薄膜。

6. 发明申请

US20090284676A1 Thin film transistor substrate and fabricating method thereof, liquid crystal display panel using the same and fabricating method thereof 有权
标题翻译：薄膜晶体管基板及其制造方法，使用其的液晶显示面板及其制造方法
公开(公告)号：US20090284676A1
公开(公告)日：2009-11-19
申请号：US12458784
申请日：2009-07-22
申请人： Byung Chul Ahn , Byoung Ho Lim , Jae Jun Ahn
发明人： Byung Chul Ahn , Byoung Ho Lim , Jae Jun Ahn
IPC分类号： G02F1/1368
CPC分类号： G02F1/136227 , G02F2001/136231 , H01L27/124 , H01L27/1288
摘要： A thin film transistor substrate and a fabricating method thereof; and a liquid crystal display panel employing the same and a fabricating method thereof for simplifying a process are disclosed. A thin film transistor substrate, including: a gate line on a substrate; a data line crossing the gate line having a gate insulating film therebetween to define a pixel area; a pixel hole in the pixel area; a pixel electrode made of a transparent conductive film on the gate insulating film in the pixel hole in the pixel area; and a thin film transistor including a gate electrode connected to the gate line, a source electrode connected to the data line, a drain electrode connected to the pixel electrode, and a semiconductor layer defining a channel between the source electrode and the drain electrode, wherein the semiconductor layer overlaps with a source/drain metal pattern including the data line, the source electrode, and the drain electrode; wherein the drain electrode protrudes from the semiconductor layer toward an upper portion of the pixel electrode, and the drain electrode connects to the pixel electrode; and wherein the semiconductor layer is removed from where it overlaps the transparent conductive film.
摘要翻译：一种薄膜晶体管基板及其制造方法; 并且公开了一种使用该液晶显示面板的液晶显示面板及其制造方法，用于简化工艺。一种薄膜晶体管衬底，包括：衬底上的栅极线; 与栅极线交叉的数据线，其间具有栅极绝缘膜，以限定像素区域; 像素区域中的像素孔; 像素区域中的像素孔中的栅极绝缘膜上的由透明导电膜构成的像素电极; 以及薄膜晶体管，其包括连接到所述栅极线的栅电极，连接到所述数据线的源电极，连接到所述像素电极的漏电极以及限定所述源电极和所述漏电极之间的沟道的半导体层，其中，半导体层与包括数据线，源电极和漏电极的源极/漏极金属图案重叠; 其中，所述漏电极从所述半导体层向所述像素电极的上部突出，所述漏电极与所述像素电极连接; 并且其中半导体层从其与透明导电膜重叠的地方去除。

7. 发明授权

US07553708B2 Fabricating method for a liquid crystal display of horizontal electric field applying type 有权
标题翻译：水平电场应用型液晶显示器的制造方法
公开(公告)号：US07553708B2
公开(公告)日：2009-06-30
申请号：US11529592
申请日：2006-09-29
申请人： Byung Chul Ahn , Byoung Ho Lim
发明人： Byung Chul Ahn , Byoung Ho Lim
IPC分类号： H01L29/04
CPC分类号： G02F1/13458 , G02F1/134363 , G02F2001/136236 , H01L27/124 , H01L27/1288
摘要： A liquid crystal display having an applied horizontal electric field comprising: a gate line; a common line substantially parallel to the gate line; a data line arranged to cross the gate line and the common line to define a pixel area; a thin film transistor formed at each crossing of the gate line and the data line; a common electrode formed in the pixel area and connected to the common line; a pixel electrode connected to the thin film transistor, wherein the horizontal electric field is formed between the pixel electrode and the common electrode in the pixel area; a gate pad formed with at least one conductive layer included in the gate line; a data pad formed with at least one conductive layer included in the data line; a common pad formed with at least one conductive layer included in the common line; a passivation film to expose at least one of the gate pad, the data pad and the common pad; and a driving integrated circuit mounted on a substrate to connect directly to one of the gate pad and the data pad.
摘要翻译：一种具有施加的水平电场的液晶显示器，包括：栅极线; 基本上平行于栅极线的公共线; 布置成跨越所述栅极线和所述公共线以限定像素区域的数据线; 形成在栅极线和数据线的每个交叉处的薄膜晶体管; 在像素区域中形成并连接到公共线的公共电极; 连接到所述薄膜晶体管的像素电极，其中在像素区域中的像素电极和公共电极之间形成水平电场; 栅极焊盘，其形成有包括在栅极线中的至少一个导电层; 数据焊盘，其形成有包括在所述数据线中的至少一个导电层; 公共焊盘，其形成有包括在所述公共线中的至少一个导电层; 钝化膜以暴露所述栅极焊盘，所述数据焊盘和所述公共焊盘中的至少一个; 以及安装在基板上以直接连接到所述栅极焊盘和所述数据焊盘之一的驱动集成电路。

8. 发明授权

US08179510B2 Liquid crystal display device and fabricating method thereof 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US08179510B2
公开(公告)日：2012-05-15
申请号：US11168358
申请日：2005-06-29
申请人： Byung Chul Ahn , Byoung Ho Lim , Jae Jun Ahn
发明人： Byung Chul Ahn , Byoung Ho Lim , Jae Jun Ahn
IPC分类号： G02F1/1343 , G02F1/1345 , G02F1/13
CPC分类号： G02F1/134363 , G02F1/1368 , G02F2001/136231
摘要： A liquid crystal display device having first and second substrates; a gate line on the first substrate; a data line crossing the gate line to define a pixel area, the gate line and the data line having a gate insulating film there between; a thin film transistor including a gate electrode, a source electrode, a drain electrode and a semiconductor layer for defining a channel between the source electrode and the drain electrode; a common line in parallel to the gate line on the first substrate; a common electrode extended from the common line in the pixel area; and a pixel electrode spaced apart from the common line and the common electrode in the pixel area to be defined in a pixel hole passing through the gate insulating film, wherein the semiconductor layer overlaps with a source and drain metal pattern including the data line, the source electrode and the drain electrode, and wherein the drain electrode protrudes from the semiconductor layer toward an upper portion of the pixel electrode to be connected to the pixel electrode.
摘要翻译：一种具有第一和第二基板的液晶显示装置; 第一基板上的栅极线; 与栅极线交叉以限定像素区域的数据线，栅极线和数据线之间具有栅极绝缘膜; 包括栅电极，源电极，漏电极和用于限定源电极和漏电极之间的沟道的半导体层的薄膜晶体管; 与第一衬底上的栅极线并联的公共线; 从像素区域中的公共线延伸的公共电极; 以及与通过栅极绝缘膜的像素孔中限定的像素区域中的公共线和公共电极间隔开的像素电极，其中半导体层与包括数据线的源极和漏极金属图案重叠，源电极和漏电极，并且其中漏电极从半导体层突出到像素电极的上部，以连接到像素电极。

9. 发明授权

US07760276B2 Liquid crystal display device and fabricating method thereof 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US07760276B2
公开(公告)日：2010-07-20
申请号：US11169571
申请日：2005-06-30
申请人： Byung Chul Ahn , Byoung Ho Lim , Jae Jun Ahn
发明人： Byung Chul Ahn , Byoung Ho Lim , Jae Jun Ahn
IPC分类号： G02F1/1343
CPC分类号： G02F1/134363 , G02F1/1368 , G02F2001/136231 , G02F2001/136236
摘要： Disclosed is a thin film transistor substrate for a fringe filed switching type liquid crystal display device, and a fabrication method thereof, that reduces the number of required mask processes, and thus improves fabrication efficiency. The fabrication method involves three mask processes, wherein the masks are partial transmitting masks, and the resulting photo-resist patterns have varying thicknesses. By having photo-resist layers of varying thicknesses, structures can be formed in multiple etching steps using the same photo-resist pattern by incrementally removing the photo-resist according to its thickness. The thin film transistor substrate has a common line, a common electrode, a gate line and a gate electrode formed directly on the substrate. The common electrode overlaps the pixel electrode in the pixel area.
摘要翻译：公开了一种用于边缘场开关型液晶显示装置的薄膜晶体管基板及其制造方法，其减少了所需的掩模处理次数，从而提高了制造效率。制造方法涉及三个掩模工艺，其中掩模是部分透射掩模，并且所得光刻胶图案具有变化的厚度。通过具有不同厚度的光致抗蚀剂层，可以通过使用相同光刻胶图案的多个蚀刻步骤，通过根据其厚度逐渐去除光致抗蚀剂来形成结构。薄膜晶体管基板具有直接形成在基板上的公共线，公共电极，栅极线和栅电极。公共电极与像素区域中的像素电极重叠。

10. 发明申请

US20100015740A1 Liquid crystal display device and fabricating method thereof 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US20100015740A1
公开(公告)日：2010-01-21
申请号：US12585845
申请日：2009-09-25
申请人： Byung Chul Ahn , Byoung Ho Lim , Jae Jun Ahn
发明人： Byung Chul Ahn , Byoung Ho Lim , Jae Jun Ahn
IPC分类号： H01L21/28
CPC分类号： G02F1/1368 , G02F1/13458 , G02F2001/136236
摘要： A liquid crystal display device, including: first and second substrates; a gate line on the first substrate; a data line crossing the gate line having a gate insulating film therebetween to define a pixel area; a pixel electrode formed of a transparent conductive film in a pixel hole passing through the gate insulating film in the pixel area; and a thin film transistor including a gate electrode, a source electrode, a drain electrode, and a semiconductor layer defining a channel between the source electrode and the drain electrode, wherein the semiconductor layer overlaps with a source and drain metal pattern including the data line, the source electrode and the drain electrode; and wherein the drain electrode protrudes from the semiconductor layer toward inside of the pixel electrode to be connected to the pixel electrode.
摘要翻译：一种液晶显示装置，包括：第一和第二基板; 第一基板上的栅极线; 与栅极线交叉的数据线，其间具有栅极绝缘膜，以限定像素区域; 在通过像素区域中的栅极绝缘膜的像素孔中由透明导电膜形成的像素电极; 以及薄膜晶体管，其包括栅电极，源电极，漏电极和限定在所述源电极和所述漏电极之间的沟道的半导体层，其中所述半导体层与包括所述数据线的源极和漏极金属图案重叠源电极和漏电极; 并且其中所述漏电极从所述半导体层突出到所述像素电极的内部以连接到所述像素电极。

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