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    • 51. 发明授权
    • Confined-flux ferrite structure for circulator/isolator
    • 循环器/隔离器的限制磁通铁氧体结构
    • US06518851B2
    • 2003-02-11
    • US09827787
    • 2001-04-09
    • Karen Kocharyan
    • Karen Kocharyan
    • H01P138
    • H01P1/32
    • A ferrite structure for non-reciprocal microwave device such as circulator/isolator. The structure includes one or more composite ferrite bodies, each having at least one region of a soft ferrite material and at least one region of a hard ferrite material, and at least two ferrous/ferrite plates. The ferrous/ferrite plates are attached to the composite ferrites so as to contribute to the completion of the magnetic loop via hard and soft ferrite portions of the composite ferrites. The soft and hard ferrite regions are magnetized in the opposite directions. The range of operation is selected to be between the resonant frequencies of soft and hard ferrite materials. With such setting the hard and soft ferrite regions provide the circulation in the same direction. As compared to the state-of-the art devices, the circulators/isolators made according to the present invention incorporate the confined-flux self-magnetized ferrite structure thus eliminating the use of conventional magnets. These devices have extended bandwidth, are reliable in operation and inexpensive in production. The structure according to the present invention is very compact, lightweight and broadband.
    • 用于不可逆微波器件的循环器/隔离器的铁氧体结构。 该结构包括一个或多个复合铁氧体体,每个复合铁氧体具有至少一个软铁氧体材料区域和至少一个硬质铁氧体材料区域,以及至少两个铁/铁素体区域。 铁素体/铁素体板附着在复合铁氧体上,以有助于通过复合铁氧体的硬和软铁氧体部分完成磁环。 软和硬铁氧体区域沿相反的方向被磁化。 选择操作范围在软铁素体材料的谐振频率之间。 通过这种设置,硬和软铁氧体区域在相同方向上提供循环。 与现有技术的装置相比,根据本发明制造的循环器/隔离器结合了限制自由磁铁氧体结构,从而消除了常规磁体的使用。 这些设备具有扩展的带宽,操作可靠,生产便宜。 根据本发明的结构非常紧凑,轻便且宽带。
    • 52. 发明申请
    • Structure and method for fabricating on chip radio frequency circulator/isolator structures and devices
    • 用于制造片上射频循环器/隔离器结构和器件的结构和方法
    • US20020179931A1
    • 2002-12-05
    • US09865428
    • 2001-05-29
    • MOTOROLA, INC.
    • Kevin B. Traylor
    • H01L031/0328H01L031/0336H01L031/072H01L031/109
    • H01L21/8258H01L21/02373H01L21/02381H01L21/02439H01L21/02488H01L21/02499H01L21/02505H01L21/02521H01L21/02543H01L21/02546H01L21/02557H01L21/0256H01L27/0605H01P1/32H01P11/00
    • High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystaline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. The use of monocrystalline magnetic material as an overlying layer is disclosed to facilitate the fabrication of on chip high frequency communications devices such as microwave circulators and isolators with direct interface to high speed compound semiconductor material in the integrated circuit.
    • 通过形成用于生长单晶层的柔性衬底,可以将单晶材料的高质量外延层生长在覆盖单晶衬底(例如大硅晶片)上。 实现顺应性衬底的形成的一种方式包括首先在硅晶片上生长容纳缓冲层。 容纳缓冲层是通过氧化硅的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变,并允许生长高品质的单晶氧化物容纳缓冲层。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外,顺应性衬底的形成可以包括利用表面活性剂增强的外延,将单晶硅外延生长到单晶氧化物上,以及Zintl相材料的外延生长。 公开了使用单晶磁性材料作为覆盖层,以便于集成电路中与高速化合物半导体材料直接接口的片上高频通信设备(例如微波循环器和隔离器)的制造。
    • 53. 发明申请
    • Nonreciprocal circuit device and communication device
    • 不可逆电路装置及通讯装置
    • US20020097103A1
    • 2002-07-25
    • US10053775
    • 2002-01-22
    • Murata Manufacturing Co., Ltd.
    • Satoru ShimmuraMakoto KawashimaSeigo Hino
    • H01P001/32
    • H01P1/32
    • A nonreciprocal circuit device which can be connected to a balanced circuit without going through a balun, and a communication device which includes the nonreciprocal circuit device. An isolator generally includes a circuit board, a lower metal case, a center electrode assembly, an upper metal case, a permanent magnet, a resistor, and matching capacitors. The circuit board comprises an insulating substrate, such as a glass epoxy substrate or a ferrite substrate, on which are formed an unbalanced input terminal, balanced output terminals (i.e., differential output terminals), a grounding terminal, and a half-wave line which interconnects the balanced output terminals.
    • 不平衡转换器可以连接到平衡电路的不可逆电路装置,以及包括不可逆电路装置的通信装置。 隔离器通常包括电路板,下金属外壳,中心电极组件,上金属外壳,永磁体,电阻器和匹配电容器。 电路板包括绝缘基板,例如玻璃环氧基板或铁氧体基板,其上形成有不平衡输入端子,平衡输出端子(即差分输出端子),接地端子和半波线 互连平衡输出端子。
    • 54. 发明申请
    • Radio freqency signal output module having radio-frequency power amplifier and isolator element
    • 无线电频率信号输出模块具有射频功率放大器和隔离元件
    • US20020017952A1
    • 2002-02-14
    • US09922727
    • 2001-08-07
    • TDK CORPORATION
    • Shinya NakaiRyoichi Kondo
    • H03G003/20H03F003/60
    • H01P1/32H05K1/0237H05K1/16H05K1/182
    • A radio frequency signal output module having a power amplifier and an isolator element is provided in which a radio-frequency output stage can be largely reduced in size and thickness. The radio frequency signal output module comprises a dielectric multilayer substrate; a radio-frequency power amplifier circuit; an isolator element; an impedance matching circuit which is inserted and connected between the radio-frequency power amplifier circuit and the isolator element; and a feedback loop for controlling the gain of the radio-frequency power amplifier circuit. The radio-frequency power amplifier circuit, the isolator element, the impedance matching circuit, and the feedback loop are integrally mounted on the dielectric multilayer substrate, and the feedback loop is branched from the impedance matching circuit, and connected to the radio-frequency power amplifier circuit.
    • 提供具有功率放大器和隔离器元件的射频信号输出模块,其中射频输出级可以大大减小尺寸和厚度。 射频信号输出模块包括电介质多层基片; 射频功率放大器电路; 隔离元件; 阻抗匹配电路插入并连接在射频功率放大器电路和隔离器元件之间; 以及用于控制射频功率放大器电路的增益的反馈回路。 射频功率放大电路,隔离元件,阻抗匹配电路和反馈回路整体安装在电介质多层基板上,反馈回路从阻抗匹配电路分支,并连接到射频电源 放大电路。
    • 55. 发明授权
    • Planar gyrator
    • 平面旋转器
    • US5903198A
    • 1999-05-11
    • US902702
    • 1997-07-30
    • Jerald A. Weiss
    • Jerald A. Weiss
    • H01P1/32
    • H01P1/32
    • In a planar gyrator, parallel transmission lines are positioned proximal to a magnetized gyrotropic substrate. Input and output transducers couple the ends of the transmission lines to corresponding input and output ports. The input and output transducers are configured to excite first and second partial wave fields on the transmission lines of similar or different phases respectively. The wave fields, in turn, interact gyromagnetically with the substrate, such that the resultant difference in phase change for a first wave propagating from the first to the second port and a second wave propagating from the second to the first port is an odd-integer multiple of 180 degrees. Alternatively, if the magnetization of the substrate is reversed, the phase of a wave propagating from the first to the second port is changed by 180 degrees. The planar gyrator is amenable to application in miniaturized planar microwave devices, for example as a magnetically-controlled phaser or switch, or as a component in a circulator or isolator implemented in planar microwave technology.
    • 在平面旋转器中,平行传输线位于磁化旋转基板的近侧。 输入和输出传感器将传输线的两端耦合到相应的输入和输出端口。 输入和输出换能器被配置为分别在类似或不同相位的传输线上激发第一和第二部分波场。 波场又与基板进行陀螺磁场相互作用,使得从第一端口传播到第二端口的第一波的相位变化的结果差和从第二端口传播到第一端口的第二波是奇整数 180度的倍数。 或者,如果基板的磁化反转,则从第一端口传播到第二端口的波的相位改变180度。 平面旋转器适用于微型平面微波装置,例如作为磁控相移器或开关,或作为在平面微波技术中实现的循环器或隔离器中的部件。
    • 57. 发明授权
    • Dielectric slab antennas
    • 介质板天线
    • US4835543A
    • 1989-05-30
    • US801533
    • 1985-11-27
    • Hermann B. Sequeira
    • Hermann B. Sequeira
    • G02B6/12H01P1/10H01P1/32H01P1/36H01P1/38H01P3/02H01P3/08H01P3/16H01P5/08H01Q13/20H01Q13/24H01Q13/28H03C7/00
    • H01P3/082H01P1/10H01P1/32H01P3/16H01Q13/20
    • A transmission line comprising a multi-layer dielectric slab structure including: a dielectric substrate layer (30) having a thickness d.sub.s and permittivity .epsilon..sub.s ; a conductive ground plane (31) on the bottom surface of the dielectric substrate layer (30); a dielectric guiding layer (32) having a thickness h and permittivity .epsilon..sub.g, where .epsilon..sub.g >.epsilon..sub.s, attached to the top surface of dielectric substrate layer (30); at least one elongated and relatively narrow dielectric loading strip layer (33) having a width W, thickness d.sub.1, and permittivity .epsilon..sub.1, where .epsilon..sub.g >.epsilon..sub.1, attached to the top surface of the dielectric guiding layer (32); and a conductive coating (34) on the top surface of the dielectric loading strip layer (32). Such a structure permits single mode propagation over a relatively wide frequency band. Radiation losses due to coupling of the desired mode to the substrate modes and the conductors are furthermore reduced and the polarization of the dominant mode is such as to render said structure relatively insensitive to small deviations from parallelism among the different interfaces. This invention is directed to antenna structures formed from this type of multi-layer dielectric slab structure.
    • 一种包括多层电介质板结构的传输线,包括:具有厚度ds和介电常数ε的电介质基底层(30); 介电基片层(30)的底表面上的导电接地层(31); 电介质引导层(32),其具有附着到电介质基底层(30)的顶表面的厚度h和介电常数εg,其中εg>ε; 具有宽度W,厚度d1和介电常数ε1的至少一个细长且相对较窄的电介质加载带层,其中ε1>ε1附着到电介质引导层(32)的顶表面; 以及在介电加载带层(32)的顶表面上的导电涂层(34)。 这种结构允许在相对宽的频带上进行单模传播。 进一步降低了由于期望的模式与衬底模式和导体的耦合而导致的辐射损耗,并且主要模式的极化使得所述结构对于不同接口之间的平行度的小偏差相对不敏感。 本发明涉及由这种类型的多层介质板结构形成的天线结构。