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51. 发明申请

US20090020068A1 METHOD OF MANUFACTURING OF SUBSTRATE 审中-公开
标题翻译：基板的制造方法
公开(公告)号：US20090020068A1
公开(公告)日：2009-01-22
申请号：US12117992
申请日：2008-05-09
申请人： Hiroyuki ODE
发明人： Hiroyuki ODE
IPC分类号： C30B11/10
CPC分类号： C23C18/02 , B08B7/0021 , H01L21/02164 , H01L21/02216 , H01L21/02282 , H01L21/316 , H01L21/67126 , H01L21/6719
摘要： A method of manufacturing a substrate is provided for readily processing a substrate in the presence of a supercritical fluid in a deposition step, an etching step, a resist peeling step and the like. The method of manufacturing a substrate of the present invention is a method of manufacturing a substrate for processing a surface of the substrate by filling a liquid fluid in a reaction chamber in which the substrate is placed, and reacting a precursor solved in the liquid fluid in the vicinity of the surface of the substrate, wherein the substrate is placed on a ceiling of the reaction chamber with the surface of the substrate oriented downward.
摘要翻译：提供一种制造基板的方法，用于在沉积步骤，蚀刻步骤，抗蚀剂剥离步骤等中，在超临界流体的存在下容易地处理基板。本发明的基板的制造方法是通过将液体流体填充在其中放置基板的反应室中来制造用于处理基板的表面的基板的方法，并且将溶解在液体流体中的前体衬底的表面附近，其中衬底被放置在反应室的天花板上，衬底的表面朝向下方。

52. 发明授权

US07465682B2 Method and apparatus for processing organosiloxane film 失效
标题翻译：有机硅氧烷膜的加工方法及装置
公开(公告)号：US07465682B2
公开(公告)日：2008-12-16
申请号：US10553191
申请日：2004-04-20
申请人： Shingo Hishiya
发明人： Shingo Hishiya
IPC分类号： H01L21/31
CPC分类号： H01L21/02126 , B05D3/0453 , H01L21/02118 , H01L21/02123 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/3122 , H01L21/316
摘要： A method for processing an organosiloxane film includes loading a target substrate (W) with a coating film formed thereon into a reaction chamber (2), and performing a heat process on the target substrate (W) within the reaction chamber (2) to bake the coating film. The coating film contains a polysiloxane base solution having an organic functional group. The heat process includes a temperature setting step of setting an interior of the reaction chamber (2) at a process temperature by heating, and a supplying step of supplying a baking gas into the reaction chamber (2) set at the process temperature, while activating the baking gas by a gas activation section (14) disposed outside the reaction chamber (2).
摘要翻译：一种加工有机硅氧烷膜的方法包括将其上形成有涂膜的目标基材（W）加载到反应室（2）中，并对反应室（2）内的目标基材（W）进行热处理以烘烤涂膜。涂膜含有具有有机官能团的聚硅氧烷碱溶液。热处理包括：通过加热将反应室（2）的内部设定在处理温度的温度设定步骤，以及供给步骤，在设定为处理温度的反应室（2）内供给烘烤气体，同时激活通过设置在反应室（2）外部的气体活化部分（14）来形成烘烤气体。

53. 发明申请

US20080305611A1 COATING COMPOSITION FOR FORMING OXIDE FILM AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE USING THE SAME 审中-公开
标题翻译：用于形成氧化膜的涂料组合物及其制造使用其的半导体器件的方法
公开(公告)号：US20080305611A1
公开(公告)日：2008-12-11
申请号：US12135412
申请日：2008-06-09
申请人： Toshiyuki HIROTA
发明人： Toshiyuki HIROTA
IPC分类号： H01L21/762 , C09D183/00
CPC分类号： C09D183/04 , C09D183/16 , H01L21/02164 , H01L21/02211 , H01L21/02216 , H01L21/02222 , H01L21/02282 , H01L21/02323 , H01L21/02337 , H01L21/02348 , H01L21/3121 , H01L21/3124 , H01L21/3125 , H01L21/316 , C08L83/00
摘要： A coating composition for forming an oxide film, which can suppress the phenomenon of an increased wet etching rate caused by a part of the SOG film embedded inside a groove becoming low-density, and which can suppress the volume expansion coefficient to a low level, and a method for producing a semiconductor device using the same are provided. An oxide film is formed inside a groove by: coating a coating composition for forming an oxide film, which contains a polysilazane or a hydrogenated silsesquioxane, and a polysilane, on a substrate having a groove; and thereafter heat treatment in an oxidizing atmosphere. This method is suitable for forming a device isolation region and a wiring interlayer dielectric film.
摘要翻译：一种用于形成氧化膜的涂料组合物，其可以抑制由嵌入在槽内的SOG膜的一部分变成低密度引起的增加的湿蚀刻速率的现象，并且可以将体积膨胀系数抑制到低水平，提供了使用该半导体器件的半导体器件的制造方法。通过在具有凹槽的基板上涂覆含有聚硅氮烷或氢化倍半硅氧烷和聚硅烷的氧化膜形成用涂料组合物，在凹槽内形成氧化膜; 然后在氧化气氛中进行热处理。该方法适用于形成器件隔离区域和布线层间绝缘膜。

54. 发明申请

US20080293170A1 METHOD FOR EVALUATING A GATE INSULATION FILM CHARACTERISTIC FOR USE IN A SEMICONDUCTOR DEVICE 失效
标题翻译：评估用于半导体器件的栅绝缘膜特性的方法
公开(公告)号：US20080293170A1
公开(公告)日：2008-11-27
申请号：US12183704
申请日：2008-07-31
申请人： Masayasu Miyata , Masamitsu Uehara
发明人： Masayasu Miyata , Masamitsu Uehara
IPC分类号： H01L21/66
CPC分类号： H01L21/28202 , H01L21/0214 , H01L21/02145 , H01L21/02148 , H01L21/02159 , H01L21/02164 , H01L21/02238 , H01L21/02255 , H01L21/02337 , H01L21/28194 , H01L21/3003 , H01L21/316 , H01L21/31608 , H01L21/31612 , H01L21/31654 , H01L29/517 , H01L29/518 , H01L29/6659 , H01L29/78
摘要： A gate insulating film 3 is formed of an insulative inorganic material containing silicon and oxygen as a main material. The gate insulating film 3 contains hydrogen atoms. A part of the absorbance of infrared radiation of which wave number is in the range of 830 to 900 cm−1 is less than both the absorbance of infrared radiation at the wave number of 830 cm−1 and the absorbance of infrared radiation at the wave number of 900 cm−1 when the insulating film to which an electric field has never been applied is measured by means of Fourier Transform Infrared Spectroscopy at room temperature. Further, in the case where the absolute value of the difference between the absorbance of infrared radiation at the wave number of 830 cm−1 and the absorbance of infrared radiation at the wave number of 770 cm−1 is defined as A and the absolute value of the difference between the absorbance of infrared radiation at the wave number of 900 cm−1 and the absorbance of infrared radiation at the wave number of 990 cm−1 is defined as B, then A and B satisfy the relation: A/B is 1.8 or more.
摘要翻译：栅绝缘膜3由含有硅和氧作为主要材料的绝缘无机材料形成。栅绝缘膜3含有氢原子。波数在830〜900cm -1范围内的红外辐射吸收率的一部分小于波数为830cm -1的红外辐射的吸光度和波浪上的红外辐射的吸光度通过在室温下的傅里叶变换红外光谱来测量当未施加电场的绝缘膜时的900cm -1的数量。此外，在波数为830cm -1处的红外辐射的吸光度与波数为770cm -1的红外线的吸光度的绝对值的绝对值定义为A，绝对值波数为900cm -1的红外辐射的吸光度与波数为990cm -1的红外辐射的吸光度之间的差异定义为B，则A和B满足关系：A / B为 1.8以上。

55. 发明申请

US20080138981A1 SYSTEM AND METHOD FOR MANUFACTURING CONTACT 有权
标题翻译：制造联系人的系统和方法
公开(公告)号：US20080138981A1
公开(公告)日：2008-06-12
申请号：US11950370
申请日：2007-12-04
申请人： Tao Han , Jianguo Fan
发明人： Tao Han , Jianguo Fan
IPC分类号： H01L21/768
CPC分类号： H01L21/316 , H01L21/76843 , H01L21/76856
摘要： System and method for manufacturing contact. According to an embodiment, the present invention provides a method for manufacturing integrated circuits. The method includes a step for providing a semiconductor substrate. The method also includes a step for defining a plurality of contact regions on the semiconductor substrate. The method further includes a step for forming a plurality of dielectric structures on the plurality of contact regions. Additionally, the method includes a step for forming a plurality of openings on the semiconductor substrate. For example, each of the openings is characterized by at least a depth, a width, and an aspect ratio. Furthermore, the method includes a step for performing deposition within the openings using a first type of material, which includes a titanium material. The method additionally includes a step for performing annealing at a predetermined set of conditions.
摘要翻译：制造接触的系统和方法。根据实施例，本发明提供一种用于制造集成电路的方法。该方法包括提供半导体衬底的步骤。该方法还包括在半导体衬底上限定多个接触区域的步骤。该方法还包括在多个接触区域上形成多个电介质结构的步骤。此外，该方法包括在半导体衬底上形成多个开口的步骤。例如，每个开口的特征在于至少深度，宽度和纵横比。此外，该方法包括使用包括钛材料的第一类型的材料在开口内进行沉积的步骤。该方法另外包括在预定条件下执行退火的步骤。

56. 发明授权

US07365000B2 Method for fabricating semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07365000B2
公开(公告)日：2008-04-29
申请号：US10876783
申请日：2004-06-28
申请人： Sung-Kwon Lee , Min-Suk Lee
发明人： Sung-Kwon Lee , Min-Suk Lee
IPC分类号： H01L21/4763 , H01L21/76
CPC分类号： H01L21/02063 , H01L21/02046 , H01L21/02052 , H01L21/02164 , H01L21/022 , H01L21/02211 , H01L21/02222 , H01L21/02274 , H01L21/02282 , H01L21/02337 , H01L21/31116 , H01L21/3125 , H01L21/316 , H01L21/31612 , H01L21/76837 , H01L21/76897 , H01L21/823475
摘要： Disclosed is a method for fabricating a semiconductor device capable of preventing an inter-layer insulation layer from being damaged during a wet cleaning process due to a density difference created by reliance on a thickness of a SOG layer subjected to a curing process and of overcoming defects caused by an improper contact opening in a certain region and a punch taken place by micro voids of an APL layer. Particularly, the method includes the steps of: forming a plurality of conductive structure on a substrate; forming a spin-on-glass layer; curing the spin-on-glass layer; forming an advanced-planarization-layer on the spin-on-glass layer; and forming a plurality of contact holes by selectively etching the advanced-planarization-layer and the spin-on-glass layer, thereby exposing portions of the substrate.
摘要翻译：公开了一种制造半导体器件的方法，该半导体器件能够防止层间绝缘层在湿式清洁过程中由于依赖于经历固化过程的SOG层的厚度和克服缺陷而产生的密度差而被损坏这是由于某个区域的接触开口不正确以及由APL层的微小空隙发生的冲击造成的。特别地，该方法包括以下步骤：在衬底上形成多个导电结构; 形成旋涂玻璃层; 固化旋涂玻璃层; 在旋涂玻璃层上形成先进的平面化层; 以及通过选择性地蚀刻高级平坦化层和旋涂玻璃层而形成多个接触孔，从而暴露基板的部分。

57. 发明申请

US20080090101A1 Method of preparing a coating solution and a corresponding use of the coating solution for coating a substrate 有权
标题翻译：制备涂布溶液的方法以及用于涂布基材的涂布溶液的相应用途
公开(公告)号：US20080090101A1
公开(公告)日：2008-04-17
申请号：US11582239
申请日：2006-10-17
申请人： Andreas Klipp , Stephan Wege , Tobias Mayer-Uhma , Cornelia Klein , Alexander Michaelis , Falko Schlenkrich
发明人： Andreas Klipp , Stephan Wege , Tobias Mayer-Uhma , Cornelia Klein , Alexander Michaelis , Falko Schlenkrich
IPC分类号： B05D3/12 , B05D3/02 , C09K17/40 , H01L21/316 , C23C16/40 , C01B25/00
CPC分类号： H01L21/02282 , H01L21/02178 , H01L21/02189 , H01L21/316
摘要： A method of preparing a coating solution, comprising the steps of providing a first solution comprising a lower alcohol; a polyethylene glycol; a complexing agent; and water; providing a second solution comprising a higher alcohol; and at least one metal alkoxide, wherein the metal in said at least one metal alkoxide is selected from the group consisting of zirconium, aluminium, titanium, tantalum and yttrium; forming a sol-gel solution by mixing said first and second solutions and thereby hydrolyzing said at least one metal alkoxide to a metal oxide and an alcohol; forming a concentrated solution by removing said lower alcohol and the alcohol resulting from the hydrolysis of said at least one metal alkoxide; and forming a coating solution by adding a medium alcohol to said concentrated solution.
摘要翻译：一种制备涂布溶液的方法，包括以下步骤：提供包含低级醇的第一溶液; 聚乙二醇; 络合剂和水; 提供包含高级醇的第二溶液; 和至少一种金属醇盐，其中所述至少一种金属醇盐中的金属选自锆，铝，钛，钽和钇; 通过混合所述第一和第二溶液形成溶胶 - 凝胶溶液，从而将所述至少一种金属醇盐水解成金属氧化物和醇; 通过除去由所述至少一种金属醇盐的水解产生的所述低级醇和醇形成浓缩溶液; 以及通过向所述浓缩溶液中加入中等醇形成涂布溶液。

58. 发明申请

US20080006877A1 Method of Forming a Solution Processed Device 有权
标题翻译：形成溶液处理装置的方法
公开(公告)号：US20080006877A1
公开(公告)日：2008-01-10
申请号：US11855425
申请日：2007-09-14
申请人： Peter Mardilovich , Randy Hoffman , Gregory Herman
发明人： Peter Mardilovich , Randy Hoffman , Gregory Herman
IPC分类号： H01L29/78 , B05C1/00 , H01L23/58
CPC分类号： H01L21/022 , B33Y10/00 , B33Y70/00 , H01L21/02118 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02183 , H01L21/02186 , H01L21/02189 , H01L21/02192 , H01L21/02197 , H01L21/02282 , H01L21/312 , H01L21/3143 , H01L21/316 , H01L21/3185 , H01L21/4757 , H01L27/1292 , H01L29/4908 , H01L29/7869 , H01L51/0003 , H01L51/0035 , H01L51/0537
摘要： Embodiments of methods, apparatuses, devices, and/or systems for forming a solution processed device are described.
摘要翻译：描述了用于形成解决方案处理设备的方法，设备，设备和/或系统的实施例。

59. 发明授权

US07314837B2 Chemical treatment of semiconductor substrates 失效
标题翻译：半导体衬底的化学处理
公开(公告)号：US07314837B2
公开(公告)日：2008-01-01
申请号：US11333629
申请日：2005-12-29
申请人： Li Li , Weimin Li
发明人： Li Li , Weimin Li
IPC分类号： H01L21/31
CPC分类号： H01L21/316 , H01L21/76232 , H01L21/76826 , H01L21/76828 , H01L21/76837 , Y10S438/902
摘要： A method is disclosed for removing liquids from a semiconductor substrate by contacting the liquid on the substrate with a liquid which attracts the liquid on the substrate, separating the liquids from the substrate, and inducing a phase transition in a layer on the substrate. In particular, the method is applicable to removing water from a water-containing layer on the substrate by contacting the layer with a hygroscopic liquid. Trenches on a substrate can be isolated by filling the trenches with a water-containing gel formed by reacting silane and hydrogen peroxide. The gel is contacted with sulfuric acid to remove a portion of the water from the gel before annealing to form silica in the trenches. Unlike filled trenches formed by conventional technology, there are no voids in the bottom of the trenches. The method is also applicable to forming dielectric layers which cover metal lines, low-dielectric layers, and interlayer dielectric layers. The liquid may be applied to the substrate by chemical vapor deposition or by spin-applying.
摘要翻译：公开了一种通过使衬底上的液体接触吸附衬底上的液体的液体，将液体与衬底分离并引起衬底上的层中的相变来从半导体衬底去除液体的方法。特别地，该方法适用于通过使该层与吸湿性液体接触来从基底上的含水层除去水分。通过用硅烷和过氧化氢反应形成的含水凝胶填充沟槽可以分离衬底上的沟槽。将凝胶与硫酸接触以在退火之前从凝胶中除去一部分水以在沟槽中形成二氧化硅。与常规技术形成的填充沟槽不同，沟槽底部没有空隙。该方法也适用于形成覆盖金属线，低电介质层和层间电介质层的电介质层。液体可以通过化学气相沉积或通过旋涂施加到基底上。

60. 发明授权

US07282436B2 Plasma treatment for silicon-based dielectrics 有权
标题翻译：硅基电介质的等离子体处理
公开(公告)号：US07282436B2
公开(公告)日：2007-10-16
申请号：US10843957
申请日：2004-05-11
申请人： Ping Jiang , Hyesook Hong , Ting Yiu Tsui , Robert Kraft
发明人： Ping Jiang , Hyesook Hong , Ting Yiu Tsui , Robert Kraft
IPC分类号： H01L21/4763
CPC分类号： H01L21/02123 , H01L21/0234 , H01L21/3105 , H01L21/316 , H01L21/76807 , H01L21/76808
摘要： An embodiment of the invention is a method of manufacturing a semiconductor wafer. The method includes depositing spin-on-glass material over the semiconductor wafer (step 208), modifying a top surface of the spin-on glass material to form a SiO2 layer (step 210), applying a vapor prime (step 212), forming a photoresist layer over the spin-on-glass material (step 214), patterning the photoresist layer (step 214), and then etching the semiconductor wafer (step 216). Another embodiment of the invention is a method of manufacturing a dual damascene back-end layer on a semiconductor wafer. The method includes depositing spin-on-glass material over the dielectric layer and within the via holes (step 208), modifying a top surface of the spin-on glass material to form a SiO2 layer (step 210), applying a vapor prime (step 212), forming a photoresist layer over said spin-on-glass material (step 214), patterning the photoresist layer (step 214), and etching trench spaces (step 216).
摘要翻译：本发明的一个实施例是制造半导体晶片的方法。该方法包括在半导体晶片上沉积旋涂玻璃材料（步骤208），修饰旋涂玻璃材料的顶表面以形成SiO 2层（步骤210），施加蒸发（步骤212），在旋涂玻璃材料上形成光致抗蚀剂层（步骤214），图案化光致抗蚀剂层（步骤214），然后蚀刻半导体晶片（步骤216）。本发明的另一实施例是在半导体晶片上制造双镶嵌后端层的方法。该方法包括在电介质层上和通孔内沉积旋涂玻璃材料（步骤208），修饰旋涂玻璃材料的顶表面以形成SiO 2层（步骤（步骤212），在所述旋涂玻璃材料上形成光致抗蚀剂层（步骤214），图案化光致抗蚀剂层（步骤214）和蚀刻沟槽空间（步骤216）。

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