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51. 发明授权

US06495002B1 Method and apparatus for depositing ceramic films by vacuum arc deposition 失效
标题翻译：通过真空电弧沉积沉积陶瓷膜的方法和装置
公开(公告)号：US06495002B1
公开(公告)日：2002-12-17
申请号：US09826861
申请日：2001-04-06
申请人： C. Christopher Klepper , John Niemel , Robert C. Hazelton , Edward J. Yadlowsky , Michael D. Keitz
发明人： C. Christopher Klepper , John Niemel , Robert C. Hazelton , Edward J. Yadlowsky , Michael D. Keitz
IPC分类号： C23C1434
CPC分类号： H01J37/32055 , C23C14/0635 , C23C14/325 , H01J37/3255
摘要： A method and apparatus for depositing a ceramic film on a substrate by vacuum arc deposition, includes a vacuum chamber, a cathode comprised of an electrically conductive ceramic material to be deposited on a substrate, an electrically insulating member about the cathode, a heater for preheating the cathode to a predetermined temperature, an anode positioned downstream of the cathode and including an opening to allow ions of the ceramic material from the cathode to flow therethrough, a substrate support positioned downstream of the anode, and a plurality of magnetic members disposed around the vacuum chamber for guiding the ions from the cathode in a predetermined direction.
摘要翻译：一种通过真空电弧沉积在衬底上沉积陶瓷膜的方法和装置，包括一个真空室，一个由待沉积在基底上的导电陶瓷材料构成的阴极，一个围绕阴极的电绝缘构件，一个用于预热的加热器阴极到预定温度，位于阴极下游的阳极，并且包括允许来自阴极的陶瓷材料的离子流过其中的开口，位于阳极下游的衬底支撑件，以及设置在阳极周围的多个磁性构件真空室，用于沿预定方向引导来自阴极的离子。

52. 发明授权

US06491784B2 Dry etching device 有权
标题翻译：干蚀刻装置
公开(公告)号：US06491784B2
公开(公告)日：2002-12-10
申请号：US09900470
申请日：2001-07-09
申请人： Akira Yamaguchi , Fumitsugu Nakayama
发明人： Akira Yamaguchi , Fumitsugu Nakayama
IPC分类号： H05H100
CPC分类号： H01J37/32009 , H01J37/3244 , H01J37/3255
摘要： It is an object of the present invention to provide an upper electrode which is prevented from being contaminated with an impurity, has a sufficient adhesive strength between the pedestal and electrode plate of silicon, secures high-precision parallelism with the lower electrode, and hence improves the etching characteristics and silicon wafer yield. It is another object of the present invention to provide a dry etching device equipped with the upper electrode. The present invention provides an upper electrode for dry etching devices, comprising an electrode plate of silicon which is supported by a pedestal, wherein (a) the pedestal is made of graphite, and (b) the electrode plate of silicon is joined to the pedestal by an organic adhesive containing a filler having a Young's modulus of 6×109 to 68×109N/m2.
摘要翻译：本发明的目的是提供一种防止被杂质污染的上电极，在硅基座和电极板之间具有足够的粘合强度，确保与下电极的高精度平行度，从而改善蚀刻特性和硅晶片产量。本发明的另一个目的是提供一种配备有上电极的干蚀刻装置。本发明提供了一种用于干蚀刻装置的上电极，包括由基座支撑的硅电极板，其中（a）基座由石墨制成，（b）硅的电极板与基座接合通过含有杨氏模量为6×10 9〜68×10 9 N / m 2的填料的有机粘合剂。

53. 发明申请

US20020007792A1 Cathode electrode for plasma sources and plasma source of a vacuum coating device, in particular for the application of coating layers on optical substrates 审中-公开
标题翻译：用于等离子体源的阴极电极和真空涂覆装置的等离子体源，特别是用于在光学基底上施加涂层
公开(公告)号：US20020007792A1
公开(公告)日：2002-01-24
申请号：US09870571
申请日：2001-05-31
申请人： SATIS VACUUM INDUSTRIES VERTRIEBS-AG
发明人： Beat Siegrist
IPC分类号： C23C016/00
CPC分类号： H01J37/32009 , H01J37/3255
摘要： The cathode electrode for plasma sources of a vacuum coating device, preferably for the application of coating layers on optical substrates, consists at least partially of a material with preferably as wide a band gap as possible of at least 3 eV between its energy bands. In this case, the wide band gap material of the cathode electrode doped for an optimal primary and secondary electron emission and can consist of diamond doped with nitrogen (N) or sulfur (S) or diamond with a codoping of boron (B) and nitrogen (N) or N-doped crystalline 6HnullSiC and 4HnullSiC (silicon carbide), or GaN, AlN and AlGaInN alloys doped with Zn, Si or ZnnullSi, as well as BN, CN, BCN and other n-doped nitrides, borides and oxides. As the band gap between two allowed bands increases, the emission of primary and secondary electrons rises significantly given a suitable energy supply.
摘要翻译：用于真空涂覆装置的等离子体源的阴极优选用于在光学基底上施加涂层，至少部分地由具有优选在其能带之间至少3eV的带隙尽可能宽的材料构成。在这种情况下，掺杂用于最佳一次和二次电子发射的阴极的宽带隙材料可以由掺杂有氮（N）或硫（S）的金刚石或具有硼（B）和氮的共掺杂的金刚石（N）或N掺杂结晶6H-SiC和4H-SiC（碳化硅）或掺杂有Zn，Si或Zn + Si的GaN，AlN和AlGaInN合金，以及BN，CN，BCN等n掺杂氮化物，硼化物和氧化物。随着两个允许频带之间的带隙增加，一个和一个二次电子的发射在适当的能量供应下显着上升。

54. 发明授权

US5993597A Plasma etching electrode 失效
标题翻译：等离子体蚀刻电极
公开(公告)号：US5993597A
公开(公告)日：1999-11-30
申请号：US883310
申请日：1997-06-26
申请人： Kazuo Saito , Yasushi Mochizuki , Akira Yamaguchi
发明人： Kazuo Saito , Yasushi Mochizuki , Akira Yamaguchi
IPC分类号： C30B29/06 , C23F4/00 , C30B33/12 , H01J37/32 , H01L21/302 , H01L21/3065 , C23F1/02 , C23C16/00
CPC分类号： H01J37/32009 , H01J37/3255 , Y10S156/914
摘要： The present invention provides:a plasma etching electrode made of single-crystal silicon, which has an electric resistance of 0.0001-40 .OMEGA.cm, whose crystal faces are (100), which is doped with boron or phosphorus, whose surface has been subjected to an etching treatment with an acid, and which has been subjected to a heat treatment in vacuum, or a plasma etching electrode made of polycrystalline silicon, which has an electric resistance of 0.0001-40 .OMEGA.cm, which is doped with boron or phosphorus, whose surface has been subjected to an etching treatment with an acid, and which has been subjected to a heat treatment in vacuum, anda process for producing a plasma etching electrode, which comprises doping metallic silicon with boron or phosphorus, subjecting the surface of the resulting material to an etching treatment with an acid, and subjecting the surface-etched material to a heat treatment in vacuum.With the plasma etching electrode, dust generation is minimized and uniform etching can be realized.
摘要翻译：本发明提供一种由单晶硅构成的等离子体蚀刻电极，该等离子体蚀刻电极的表面已经受到了表面的掺杂硼或磷的电阻为0.0001-40欧姆·厘米，晶体面为（100）由真空中进行了热处理的真空中进行了蚀刻处理，或由多晶硅制成的等离子体蚀刻电极，其电阻为0.0001-40欧米亚厘米，掺杂有硼或磷，表面已经用酸进行了蚀刻处理，并且在真空中进行了热处理，以及用于制造等离子体蚀刻电极的方法，其包括用硼或磷掺杂金属硅，使所得到的表面用酸蚀刻处理的材料，并在真空中对表面蚀刻的材料进行热处理。利用等离子体蚀刻电极，可以实现灰尘的产生和均匀蚀刻。

55. 发明授权

US5685949A Plasma treatment apparatus and method 失效
标题翻译：等离子体处理装置及方法
公开(公告)号：US5685949A
公开(公告)日：1997-11-11
申请号：US590057
申请日：1996-01-16
申请人： Koji Yashima
发明人： Koji Yashima
IPC分类号： H05H1/46 , C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/31 , H01L21/316 , H01L21/318 , H01L21/324 , H01L21/00
CPC分类号： H01J37/32082 , H01J37/3255 , H01J2237/2001
摘要： A plasma treatment apparatus for plasma treating an object to be treated or workpiece by exposure to ions, free radicals and activated gas species generated by a plasma discharge includes a suscepter electrode supposing the workpiece and another electrode facing the suscepter electrode, together constituting a pair of plasma generating electrodes across which an AC voltage is applied. The apparatus also includes halogen lamps which are disposed outside of the respective electrodes for radiating heat rays to the object. The plasma generating electrodes are formed of a material which transmits the heat rays from the halogen lamp and resists a temperature of about 200.degree. C. or higher, such as a doped silicon in which impurities are doped into a silicon substrate. Thus, the object may be treated in a short time and at a low temperature by heating and using a plasma.
摘要翻译：一种等离子体处理装置，用于通过暴露于由等离子体放电产生的离子，自由基和活性气体等离子体处理待处理物体或工件，包括：假定工件的另一电极，另一电极面对所述电容器，一起构成一对施加有交流电压的等离子体产生电极。该设备还包括卤素灯，其设置在各个电极的外侧，用于向物体辐射热射线。等离子体产生电极由传递来自卤素灯的热射线并抵抗约200℃或更高温度的材料形成，例如杂质被掺杂到硅衬底中的掺杂硅。因此，可以通过加热和使用等离子体在短时间和低温下处理物体。

56. 发明授权

US5372674A Electrode for use in a plasma assisted chemical etching process 失效
标题翻译：用于等离子体辅助化学蚀刻工艺的电极
公开(公告)号：US5372674A
公开(公告)日：1994-12-13
申请号：US189262
申请日：1994-01-28
申请人： George Steinberg
发明人： George Steinberg
IPC分类号： C23F4/00 , H01J27/08 , H01J37/08 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/306 , B44C1/22
CPC分类号： H01J37/32009 , H01J37/32082 , H01J37/3244 , H01J37/3255 , H01J2237/3341
摘要： The electrode (11) of the present invention is used in a Plasma Assisted Chemical Etching process and comprises an inner member (47) surrounded by an outer member (45) defining a gap (77) therebetween such that a gas can flow therethrough. In the preferred embodiment, the inner member (47) and the concentric outer member (45) are both cylindrical in shape, therefore, the gap (77) has an annular configuration. A vertical ducting system is bored within the inner member (47) and directly or indirectly intersects the annular gap (77).
摘要翻译：本发明的电极（11）用于等离子辅助化学蚀刻工艺中，并且包括由外部构件（45）围绕的内部构件（47），外部构件（45）在其间限定间隙（77），使得气体可以流过其中。在优选实施例中，内部构件（47）和同心外部构件（45）的形状都是圆柱形，因此间隙（77）具有环形构造。垂直管道系统在内部构件（47）内钻孔，并与环形间隙（77）直接或间接相交。

57. 发明授权

US5196273A Tantalum carbide composite materials 失效
标题翻译：碳酸钡复合材料
公开(公告)号：US5196273A
公开(公告)日：1993-03-23
申请号：US698898
申请日：1991-05-13
申请人： Peter Tsantrizos , Lakis T. Mavropoulos , Kartik Shanker , Robin A. L. Drew , Bruce Henshaw , Raynald Lachance
发明人： Peter Tsantrizos , Lakis T. Mavropoulos , Kartik Shanker , Robin A. L. Drew , Bruce Henshaw , Raynald Lachance
IPC分类号： C04B35/56 , C04B41/88 , C22C29/06 , H01J37/32 , H05H1/34 , H05H1/40
CPC分类号： H01J37/3255 , C22C29/06 , H05H1/34 , H05H1/40 , Y10T428/12486
摘要： A tantalum carbide composite material comprises a tantalum carbide preform infiltrated with a low melting temperature metal selected from aluminum, copper, various alloys of either aluminum or copper, gold and silver.

58. 发明授权

US4786359A Xenon enhanced plasma etch 失效
标题翻译：氙气增强等离子体蚀刻
公开(公告)号：US4786359A
公开(公告)日：1988-11-22
申请号：US65746
申请日：1987-06-24
申请人： Mark M. Stark , Shu Nakajima , Roger B. Lachenbruch
发明人： Mark M. Stark , Shu Nakajima , Roger B. Lachenbruch
IPC分类号： C23F4/00 , H01J37/32 , H01L21/3065 , C03C15/00
CPC分类号： H01J37/32082 , H01J37/3255 , H01L21/3065 , H01J2237/3347
摘要： A plasma etch process and apparatus is disclosed in which a gas mixture comprises CF.sub.3 Br, xenon or krypton, and oxygen. The plasma reactor includes a sacrificial element, preferably in the form of a graphite ring, on the lower electrode of a parallel plate reactor.

59. 发明授权

US4394245A Sputtering apparatus 失效
标题翻译：溅射装置
公开(公告)号：US4394245A
公开(公告)日：1983-07-19
申请号：US346959
申请日：1982-02-08
申请人： Yoshio Homma , Sukeyoshi Tsunekawa , Hiroshi Morisaki , Seiki Harada
发明人： Yoshio Homma , Sukeyoshi Tsunekawa , Hiroshi Morisaki , Seiki Harada
IPC分类号： C23C14/34 , C23C14/35 , C23C14/36 , H01J37/34 , C23C15/00
CPC分类号： H01J37/3255 , H01J37/3408
摘要： Herein disclosed is a sputtering apparatus in which a substrate electrode has its electrode surface plate made of a soft magnetic material. The thickness distribution of the film deposited is made uniform by the use of the sputtering apparatus.
摘要翻译：这里公开了一种溅射装置，其中基板电极具有由软磁性材料制成的电极表面板。通过使用溅射装置使沉积的膜的厚度分布均匀。

60. 发明授权

US12068137B2 Thread profiles for semiconductor process chamber components 有权
公开(公告)号：US12068137B2
公开(公告)日：2024-08-20
申请号：US17032220
申请日：2020-09-25
申请人： APPLIED MATERIALS, INC.
发明人： Reyn Tetsuro Wakabayashi , Carlaton Wong , Timothy Joseph Franklin
IPC分类号： H01J37/32 , C23C16/455 , F16K27/00 , H01L21/67
CPC分类号： H01J37/32568 , C23C16/45559 , F16K27/003 , H01J37/3244 , H01J37/3255 , H01L21/67017 , H01L21/6719 , H01J2237/334
摘要： A component for use in a substrate process chamber includes: a body having an opening extending partially through the body from a top surface of the body, wherein the opening includes a threaded portion for fastening the body to a second process chamber component, wherein the threaded portion includes a plurality of threads defining a plurality of rounded crests and a plurality of rounded roots, and wherein a depth of the threaded portion, being a radial distance between a rounded crest of the plurality of rounded crests and an adjacent root of the plurality of rounded roots, decreases from a first depth to a second depth at a last thread of the plurality of threads.

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