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    • 2. 发明授权
    • Plasma treatment apparatus and method
    • 等离子体处理装置及方法
    • US5685949A
    • 1997-11-11
    • US590057
    • 1996-01-16
    • Koji Yashima
    • Koji Yashima
    • H05H1/46C23F4/00H01J37/32H01L21/302H01L21/3065H01L21/31H01L21/316H01L21/318H01L21/324H01L21/00
    • H01J37/32082H01J37/3255H01J2237/2001
    • A plasma treatment apparatus for plasma treating an object to be treated or workpiece by exposure to ions, free radicals and activated gas species generated by a plasma discharge includes a suscepter electrode supposing the workpiece and another electrode facing the suscepter electrode, together constituting a pair of plasma generating electrodes across which an AC voltage is applied. The apparatus also includes halogen lamps which are disposed outside of the respective electrodes for radiating heat rays to the object. The plasma generating electrodes are formed of a material which transmits the heat rays from the halogen lamp and resists a temperature of about 200.degree. C. or higher, such as a doped silicon in which impurities are doped into a silicon substrate. Thus, the object may be treated in a short time and at a low temperature by heating and using a plasma.
    • 一种等离子体处理装置,用于通过暴露于由等离子体放电产生的离子,自由基和活性气体等离子体处理待处理物体或工件,包括:假定工件的另一电极,另一电极面对所述电容器,一起构成一对 施加有交流电压的等离子体产生电极。 该设备还包括卤素灯,其设置在各个电极的外侧,用于向物体辐射热射线。 等离子体产生电极由传递来自卤素灯的热射线并抵抗约200℃或更高温度的材料形成,例如杂质被掺杂到硅衬底中的掺杂硅。 因此,可以通过加热和使用等离子体在短时间和低温下处理物体。