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    • 52. 发明申请
    • Apparatus and method for detecting wafer position
    • 用于检测晶片位置的装置和方法
    • US20050012938A1
    • 2005-01-20
    • US10621453
    • 2003-07-18
    • Jun-Ming ChenLi-Chun Wei
    • Jun-Ming ChenLi-Chun Wei
    • G01B11/14G03F7/20H01L21/00
    • H01L21/67259G03F7/707G03F7/70708
    • Apparatus and method for detecting wafer position is described. The apparatus for detecting wafer position includes a first sensor group and a second sensor group. The first sensor group and the second sensor group both include at least one light emitter and at least one light receiver. In one case, the light emitter is at one side beside a wafer and the light receiver is at the same height with the light emitter at the opposing side beside the wafer. In the other case, the light emitter neighbors the light receiver vertically at the same side beside the wafer. When the apparatus for detecting wafer position is operating, the apparatus determines whether a wafer position is normal by the relative position between the wafer and the sensors (the first sensor group and the second sensor group). Once the wafer position is abnormal and the time interval between the trigger of the first sensor group and the trigger of the second sensor group deviates the predetermined time interval the apparatus for detecting wafer position reports the abnormal event to the equipment including the apparatus to stop the motion of the wafer lifter and the motion of the robot blade in the process chamber. At the same time, the equipment including the apparatus for detecting wafer position alarms people in the production to proceed with troubleshooting.
    • 描述了用于检测晶片位置的装置和方法。 用于检测晶片位置的装置包括第一传感器组和第二传感器组。 第一传感器组和第二传感器组都包括至少一个光发射器和至少一个光接收器。 在一种情况下,光发射器在晶片旁边的一侧,并且光接收器与晶片旁边的相对侧处的光发射器处于相同的高度。 在另一种情况下,光发射器在晶片旁边的同一侧垂直地邻近光接收器。 当用于检测晶片位置的装置运行时,该装置通过晶片和传感器(第一传感器组和第二传感器组)之间的相对位置来确定晶片位置是否正常。 一旦晶片位置异常,并且第一传感器组的触发与第二传感器组的触发之间的时间间隔偏离预定时间间隔,则用于检测晶片位置的装置将异常事件报告给包括该装置的设备以停止 晶片升降器的运动和机器人叶片在处理室中的运动。 同时,包括用于检测晶片位置的设备的设备会警告生产中的人员进行故障排除。
    • 57. 发明申请
    • System for correcting aberrations and distortions in EUV lithography
    • 用于校正EUV光刻中的像差和畸变的系统
    • US20040013956A1
    • 2004-01-22
    • US10455254
    • 2003-06-04
    • Nikon Corporation
    • Michael Sogard
    • G03F007/20G03F007/207B32B003/10G03B027/68G03B027/34G03B027/40G03B027/32G03B027/62G21K005/00
    • G03F7/70233G03F7/70258G03F7/70266G03F7/703G03F7/707G03F7/70708G03F7/70783G03F7/70875G03F7/70891Y10T428/24802
    • A system for correcting aberration and distortion in EUV lithography places a reticle on a deformable reticle chuck, and a reticle height sensor is used to measure the surface height of the reticle placed on the deformable reticle chuck. An optical system projects EUV radiation onto the reticle and collects and projects reflected EUV radiation from the reticle through its exit pupil onto a wafer placed on a wafer chuck. A deformable mirror disposed proximal to the exit pupil may also be controlled for this purpose. The deformable reticle chuck and the deformable mirror are controlled such that aberration and distortion of an image of the reticle formed on the wafer by the optical system are corrected based on the height measured by the reticle height sensor. The deformable reticle chuck includes a supporting structure, a deformable membrane disposed above and being comprised of a dielectric layer and a conductive layer, a voltage source connected to the conductive coating on the reticle and the conductive layer to generate an electrostatic attractive force between them, a plurality of actuator rods each connected to a corresponding one of actuators, and a coolant gas inside a chamber formed between the membrane and the top surface of the supporting structure. A deformable wafer chuck and wafer height sensor may be included to provide further correction of the image.
    • 用于校正EUV光刻中的像差和畸变的系统将光罩放置在可变形的光罩卡盘上,并且使用标线高度传感器来测量放置在可变形标线盘卡盘上的掩模版的表面高度。 光学系统将EUV辐射投射到掩模版上,并将来自掩模版的反射EUV辐射通过其出射光瞳聚集并投射到放置在晶片卡盘上的晶片上。 为了此目的也可以控制靠近出射光瞳设置的可变形反射镜。 控制可变形的光罩卡盘和可变形反射镜,使得基于由光罩高度传感器测量的高度来校正通过光学系统在晶片上形成的掩模版图像的像差和畸变。 可变形标线盘卡盘包括支撑结构,设置在电介质层和导电层之上并由导电层构成的可变形膜,连接到标线片上的导电涂层和导电层的电压源,以在它们之间产生静电引力, 多个致动器杆,每个致动器杆连接到相应的一个致动器,以及在膜和支撑结构的顶表面之间形成的室内的冷却剂气体。 可以包括可变形的晶片卡盘和晶片高度传感器以提供图像的进一步校正。
    • 60. 发明申请
    • Exposure apparatus, exposure method, and device manufacturing method
    • 曝光装置,曝光方法和装置制造方法
    • US20030197848A1
    • 2003-10-23
    • US10443034
    • 2003-05-22
    • Nikon Corporation
    • Naomasa Shiraishi
    • G03B027/54G03B027/42
    • G03F9/7026G03F7/70358G03F7/707G03F7/70708G03F7/70866G03F7/70983
    • In an exposure apparatus, a main controller calculates the thickness of a light transmitting protective member that protects a pattern surface of a mask, based on detection signals of a first and second reflection beams of a detection beam irradiated from an irradiation system, reflected off the front and back surfaces of the protective member, and received by a photodetection system. This makes exposure that takes into account the variation in the image forming state of the image pattern depending on the calculated thickness of the protective member possible. Accordingly, exposure with high precision is possible, without the difference in thickness of the protective member protecting the pattern surface of the mask affecting the exposure. In addition, when the incident angle of the detection beam is optimized, setting a detection offset in the photodetection system, or resetting the origin will not be necessary.
    • 在曝光装置中,主控制器基于从照射系统照射的检测光束的第一反射光束和第二反射光束的检测信号,计算保护掩模的图案表面的透光保护部件的厚度, 保护构件的前表面和后表面,并由光电检测系统接收。 这使得考虑到图像图案的图像形成状态的变化取决于所计算的保护构件的厚度的曝光。 因此,可以高精度地曝光,而不影响保护罩的图案表面的保护构件的厚度差异,从而影响曝光。 此外,当检测光束的入射角度被优化时,在光电检测系统中设置检测偏移或复位原点将是不必要的。