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1. 发明授权

US07459690B2 Lithographic apparatus, device manufacturing method, and device manufactured thereby 有权
标题翻译：平版印刷设备，器件制造方法和由此制造的器件
公开(公告)号：US07459690B2
公开(公告)日：2008-12-02
申请号：US11432365
申请日：2006-05-12
申请人： Jan Evert Van Der Werf , Mark Kroon , Wilhelmus Cornelis Keur , Vadim Yevgenyevich Banine , Hans Van Der Laan , Johannes Hubertus Josephina Moors , Erik Roelof Loopstra
发明人： Jan Evert Van Der Werf , Mark Kroon , Wilhelmus Cornelis Keur , Vadim Yevgenyevich Banine , Hans Van Der Laan , Johannes Hubertus Josephina Moors , Erik Roelof Loopstra
IPC分类号： G01J1/42
CPC分类号： G03F7/70558 , G01J1/58 , G03F7/70741 , G03F7/7085 , G03F7/70916 , G03F7/70983
摘要： A radiation sensor for use with a lithographic apparatus is disclosed, the radiation sensor comprising a radiation-sensitive material which converts incident radiation of wavelength λ1 into secondary radiation; and sensing means capable of detecting the secondary radiation emerging from said layer.
摘要翻译：公开了一种用于光刻设备的辐射传感器，辐射传感器包括将波长λ1的入射辐射转换成次级辐射的辐射敏感材料; 以及能够检测从所述层出现的二次辐射的感测装置。

2. 发明授权

US07307712B2 Method of detecting mask defects, a computer program and reference substrate 有权
标题翻译：检测掩模缺陷的方法，计算机程序和参考基板
公开(公告)号：US07307712B2
公开(公告)日：2007-12-11
申请号：US10693603
申请日：2003-10-27
申请人： Jan Evert Van Der Werf , Auke Jan Mud
发明人： Jan Evert Van Der Werf , Auke Jan Mud
IPC分类号： G01N21/00
CPC分类号： G03F7/7065
摘要： A method of detecting mask defects in which a reference substrate is patterned by the mask immediately after manufacture of the mask is disclosed. The reference substrate is stored in clean conditions while IC manufacture takes place. When a mask defect is suspected, a resist coated substrate, the test substrate, is patterned by exposure of the mask. The patterns on the reference substrate and the test substrate are compared to determine if there is a mask defect. The location of the mask defect can be found by scanning smaller areas of the patterns.
摘要翻译：公开了一种在制造掩模之后立即检测掩模缺陷的方法，其中通过掩模对参考基板进行图案化。参考基板在IC制造过程中保存在干净的状态。当怀疑掩模缺陷时，通过掩模的曝光将抗蚀剂涂覆的基底（即测试基底）图案化。比较参考基板和测试基板上的图案，以确定是否存在掩模缺陷。掩模缺陷的位置可以通过扫描图案的较小区域来找到。

3. 发明授权

US07277185B2 Method of measuring overlay 有权
标题翻译：测量覆盖层的方法
公开(公告)号：US07277185B2
公开(公告)日：2007-10-02
申请号：US11153316
申请日：2005-06-16
申请人： Rene Monshouwer , Jacobus Hermanus Maria Neijzen , Jan Evert Van Der Werf
发明人： Rene Monshouwer , Jacobus Hermanus Maria Neijzen , Jan Evert Van Der Werf
IPC分类号： G01B11/02 , G01B11/00
CPC分类号： G03F7/70633 , G03F7/70675 , G03F9/7049 , G03F9/7084
摘要： In a method of measuring, in a lithographic manufacturing process using a lithographic projection apparatus, overlay between a resist layer, in which a mask pattern is to be imaged, and a substrate, use is made of an alignment-measuring device forming part of the apparatus and of specific overlay marks in the substrate and resist layer. These marks have periodic structures with periods which cannot be resolved by the alignment device, but generate an interference pattern having a period corresponding to the period of a reference mark of the alignment device.
摘要翻译：在使用光刻投影装置的光刻制造工艺中，在要成像掩模图案的抗蚀剂层与基板之间进行覆盖的测量方法中，使用对准测量装置形成部分设备和基板和抗蚀剂层中的特定覆盖标记。这些标记具有周期性结构，其周期不能由对准装置解决，而是产生具有对应于对准装置的参考标记的周期的周期的干涉图案。

4. 发明授权

US06937334B2 Method of measuring alignment of a substrate with respect to a reference alignment mark 失效
标题翻译：测量衬底相对于参考对准标记的对准的方法
公开(公告)号：US06937334B2
公开(公告)日：2005-08-30
申请号：US09940819
申请日：2001-08-28
申请人： Rene Monshouwer , Jacobus Hermanus Maria Neijzen , Jan Evert Van Der Werf
发明人： Rene Monshouwer , Jacobus Hermanus Maria Neijzen , Jan Evert Van Der Werf
IPC分类号： G03F7/22 , G03F9/00 , H01L21/027 , G01B11/00 , G01B11/02
CPC分类号： G03F9/7015 , G03F9/7049 , G03F9/7076
摘要： For determining the alignment of a substrate with respect to a mask, a substrate alignment mark having a periodic structure, and an additional alignment mark, having a periodic structure and provided in a resist layer (RL) on top of the substrate, are used. Upon illumination of these two marks, having a period which is considerably smaller than that of a reference mark, an interference pattern (Pb) is generated, which has a period corresponding to that of the reference mark. By measuring the movement of the interference pattern with respect to the reference mark, the much smaller mutual movement of the fine alignment marks can be measured. In this way, the resolution and accuracy of a conventional alignment device can be increased considerably.
摘要翻译：为了确定衬底相对于掩模的对准，使用具有周期性结构的衬底对准标记和具有周期性结构并且设置在衬底顶部的抗蚀剂层（RL）中的附加对准标记）。在照射这两个标记时，具有比参考标记的周期明显更小的周期，产生具有对应于参考标记的周期的干涉图案（Pb）。通过测量干涉图案相对于参考标记的移动，可以测量精细对准标记的相对较小的相互移动。以这种方式，可以显着提高常规对准装置的分辨率和精度。

5. 发明授权

US07505116B2 Lithographic apparatus and device manufacturing method 有权
标题翻译：平版印刷设备和器件制造方法
公开(公告)号：US07505116B2
公开(公告)日：2009-03-17
申请号：US11202195
申请日：2005-08-12
申请人： Jan Evert Van Der Werf , George Arie Jan Fockert , Hans Van Der Laan
发明人： Jan Evert Van Der Werf , George Arie Jan Fockert , Hans Van Der Laan
IPC分类号： G03B27/54 , G03B27/42 , G01B11/00
CPC分类号： G03F7/70258 , G03F7/70233 , G03F7/70591 , G03F9/7015 , G03F9/7088
摘要： A reflector alignment system uses an alignment beam propagating through a projection system that includes a mirror group to measure the apparent relative positions of two reference marks fixed to a reference frame on opposite sides of the projection system. Any movement of mirrors in the projection system will be detected as a shift in the apparent position of the reference marks.
摘要翻译：反射器对准系统使用传播通过投影系统的对准束，该投影系统包括反射镜组，以测量固定在投影系统的相对侧上的参考框架的两个参考标记的表观相对位置。投影系统中任何反射镜的移动将被检测为参考标记的表观位置的偏移。

6. 发明授权

US07283236B2 Alignment system and lithographic apparatus equipped with such an alignment system 有权
标题翻译：对准系统和配备这种对准系统的光刻设备
公开(公告)号：US07283236B2
公开(公告)日：2007-10-16
申请号：US10882683
申请日：2004-07-02
申请人： Cristian Presura , Jan Evert Van Der Werf
发明人： Cristian Presura , Jan Evert Van Der Werf
IPC分类号： G01B11/00 , G03B27/42 , G03B27/32 , H01L23/544 , H01L21/76 , G03F9/00 , G03C5/00
CPC分类号： G03F9/7076
摘要： A marker structure on a substrate includes line elements and trench elements, the line elements and trench elements each having a length in a first direction and being arranged in an alternating repetitive sequence in a second direction perpendicular to the first direction, the alternating repetitive sequence having a sequence length, the marker structure having at least one pitch value, the at least one pitch value being the sum of a line width of one line element and a trench width of one trench element. A width of the line elements varies over the sequence length of the marker structure between a minimum line width value and a maximum line width value, while a width of the trench elements likewise varies over the sequence length of the marker structure between a minimum trench width value and a maximum trench width value. A duty cycle of a pair of a line element and an adjacent trench element is substantially constant over the sequence length of the marker structure. Thus, the pitch value varies from a minimum pitch value to a maximum pitch value over the sequence length.
摘要翻译：衬底上的标记结构包括线元件和沟槽元件，线元件和沟槽元件各自具有在第一方向上的长度并且在垂直于第一方向的第二方向上以交替的重复序列排列，所述交替重复序列具有序列长度，所述标记结构具有至少一个间距值，所述至少一个间距值是一个线形元件的线宽和一个沟槽元件的沟槽宽度之和。线元素的宽度在标记结构的序列长度之间在最小线宽度值和最大线宽度值之间变化，而沟槽元件的宽度同样在标记结构的序列长度之间变化，最小沟宽度值和最大沟槽宽度值。一对线元件和相邻沟槽元件的占空比在标记结构的序列长度上基本上是恒定的。因此，音调值在序列长度上从最小音调值变化到最大音调值。

7. 发明授权

US07012673B2 Lithographic apparatus and device manufacturing method 有权
标题翻译：平版印刷设备和器件制造方法
公开(公告)号：US07012673B2
公开(公告)日：2006-03-14
申请号：US10866077
申请日：2004-06-14
申请人： Aleksey Yurievich Kolesnychenko , Jan Evert Van Der Werf
发明人： Aleksey Yurievich Kolesnychenko , Jan Evert Van Der Werf
IPC分类号： G03B27/42 , G03B27/52
CPC分类号： G03F7/70341
摘要： Liquid is supplied to a space between a projection system of a lithographic apparatus and a substrate, but there is a space between the liquid and the substrate. An evanescent field may be formed between the liquid and the substrate allowing some photons to expose the substrate. Due to the refractive index of the liquid, the resolution of the system may be improved and liquid on the substrate may be avoided.
摘要翻译：液体被供应到光刻设备的投影系统和基板之间的空间，但在液体和基板之间存在空间。可以在液体和基底之间形成一个ev逝场，使一些光子露出基底。由于液体的折射率，可以改善系统的分辨率，并且可以避免衬底上的液体。

8. 发明授权

US07499149B2 Holographic mask for lithographic apparatus and device manufacturing method 有权
标题翻译：光刻设备和器件制造方法全息掩模
公开(公告)号：US07499149B2
公开(公告)日：2009-03-03
申请号：US10872775
申请日：2004-06-22
申请人： Bernardus Hendrikus Wilhelmus Hendriks , Jan Evert Van Der Werf
发明人： Bernardus Hendrikus Wilhelmus Hendriks , Jan Evert Van Der Werf
IPC分类号： G03B27/62 , G03F1/00 , G03F7/00 , G21K5/00
CPC分类号： G03F7/70408
摘要： A holographic mask includes a plurality of pixels each imparting a calculated phase and/or amplitude change to the projection beam to provide an image that is parallel to the mask. The holographic mask is used displaced from the best object plane of the projection lens.
摘要翻译：全息掩模包括多个像素，每个像素赋予投影光束计算的相位和/或幅度变化以提供平行于掩模的图像。使用全息掩模从投影透镜的最佳物体平面移位。

9. 发明授权

US07492443B2 Device manufacturing method, device manufactured thereby and a mask for use in the method 有权
标题翻译：装置制造方法，由此制造的装置和用于该方法的掩模
公开(公告)号：US07492443B2
公开(公告)日：2009-02-17
申请号：US11023359
申请日：2004-12-29
申请人： Jan Evert Van Der Werf , Erik Roelof Loopstra , Hans Meiling , Johannes Hubertus Josephina Moors , Martinus Hendrikus Antonius Leenders
发明人： Jan Evert Van Der Werf , Erik Roelof Loopstra , Hans Meiling , Johannes Hubertus Josephina Moors , Martinus Hendrikus Antonius Leenders
IPC分类号： G03B27/68 , G03B27/42 , G03F9/00 , G03C5/00
CPC分类号： G03F7/707 , G03F7/70233 , G03F7/70258 , G03F7/70283 , G03F7/703
摘要： A device manufacturing method according to one embodiment of the invention includes positioning a reflective patterning structure to reflect at least a portion of a beam of radiation as a patterned beam of radiation having a pattern in its cross-section. The method also includes using a projection system to project the patterned beam of radiation to form an image on a target portion of a layer of radiation-sensitive material. Positioning includes at least one among shifting and tilting a nominal reflective surface of the reflective patterning structure with respect to a nominal object plane of the projection system according to a distortion value.
摘要翻译：根据本发明的一个实施例的器件制造方法包括定位反射图案形成结构以将辐射束的至少一部分反射为在其横截面中具有图案的图案化辐射束。该方法还包括使用投影系统投影图案化的辐射束以在辐射敏感材料层的目标部分上形成图像。定位包括根据失真值相对于投影系统的标称物平面移动和倾斜反射图案形成结构的标称反射表面中的至少一个。

10. 发明授权

US07453577B2 Apparatus and method for inspecting a patterned part of a sample 失效
标题翻译：用于检查样品的图案化部分的装置和方法
公开(公告)号：US07453577B2
公开(公告)日：2008-11-18
申请号：US11010566
申请日：2004-12-14
申请人： Jan Evert Van Der Werf , Arie Jeffrey Den Boef , Cristian-Nicolae Presura
发明人： Jan Evert Van Der Werf , Arie Jeffrey Den Boef , Cristian-Nicolae Presura
IPC分类号： G01B11/30
CPC分类号： G01N21/211 , G01N21/956 , G01N2021/213
摘要： An inspection apparatus is disclosed having an radiation system configured to provide an radiation beam, a beamnsplitter configured to create, from the radiation beam, a first illumination beam and a second illumination beam directed to a planar reference part of a sample and a patterned part of the sample, respectively, and a beam detector configured to detect a detection beam, the detection beam comprising a recombination of radiation scattered from the planar reference part and the patterned part.
摘要翻译：公开了一种检查设备，其具有被配置为提供辐射束的辐射系统，束分配器被配置成从辐射束产生第一照明光束和指向样品的平面参考部分的第二照明光束，所述样本分别和被配置为检测检测光束的光束检测器，所述检测光束包括从所述平面参考部分和所述图案化部分散射的辐射的复合。

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