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51. 发明申请

US20090155546A1 FILM-FORMING COMPOSITION, METHOD FOR PATTERN FORMATION, AND THREE-DIMENSIONAL MOLD 审中-公开
标题翻译：成膜组合物，形成图案的方法和三维模具
公开(公告)号：US20090155546A1
公开(公告)日：2009-06-18
申请号：US12064342
申请日：2006-08-28
申请人： Naoki Yamashita , Kiyoshi Ishikawa , Yoshinori Sakamoto , Takuma Hojo
发明人： Naoki Yamashita , Kiyoshi Ishikawa , Yoshinori Sakamoto , Takuma Hojo
IPC分类号： B32B5/00 , G03F7/20 , G03F7/004
CPC分类号： G03F7/0043 , B81C99/009 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/0045 , G03F7/0757 , G03F7/203 , Y10T428/24802
摘要： Disclosed are a film-forming composition which can form a pattern having an enhanced contrast by the action of uneven surface morphology produced after image development, and a method for forming a pattern and a three-dimensional mold using the composition. A composition comprising at least one of a hydrolysate and a condensation product of an alkoxy metal compound represented by the chemical formula (A), the composition additionally comprising a compound which can respond to at least one of light and heat to control the solubility of a finished film in a developing solution. R1n-M(OR2)4-n (A) wherein M represents a silicon, a germanium, a titanium, a tantalum, an indium or a tin; R1 represents a hydrogen atom or a monovalent organic group; R2 represents a monovalent organic group; and n represents an integer of 1 to 3.
摘要翻译：公开了一种成膜组合物，其可以通过图像显影后产生的不均匀表面形态的作用形成具有增强的对比度的图案，以及使用该组合物形成图案的方法和三维模具。一种组合物，其包含由化学式（A）表示的烷氧基金属化合物的水解产物和缩合产物中的至少一种，所述组合物另外包含可以响应于光和热中的至少一种以控制溶解度的化合物成品薄膜在开发中的解决方案。 <？in-line-formula description =“In-line Formulas”end =“lead”？> R1n-M（OR2）4-n（A）<？in-line-formula description =“In-line Formulas”end =“尾”→其中M表示硅，锗，钛，钽，铟或锡; R1表示氢原子或一价有机基团; R2表示一价有机基团; n表示1〜3的整数。

52. 发明申请

US20090087798A1 SYSTEM AND METHOD FOR ABSORBANCE MODULATION LITHOGRAPHY 失效
标题翻译：用于吸收调制算法的系统和方法
公开(公告)号：US20090087798A1
公开(公告)日：2009-04-02
申请号：US12338202
申请日：2008-12-18
申请人： Rajesh Menon , Henry I. Smith
发明人： Rajesh Menon , Henry I. Smith
IPC分类号： G03F7/20
CPC分类号： G03F7/70291 , G03F7/001 , G03F7/203 , G03F7/7005 , G03F7/70275 , G03F7/70316 , G03F7/70408 , G03F7/70466
摘要： A lithography system is disclosed that provides an array of areas of imaging electromagnetic energy that are directed toward a recording medium. The reversible contrast-enhancement material is disposed between the recording medium and the array of areas of imaging electromagnetic energy.
摘要翻译：公开了一种光刻系统，其提供朝向记录介质的成像电磁能的区域阵列。可逆对比度增强材料设置在记录介质和成像电磁能的区域阵列之间。

53. 发明授权

US07501227B2 System and method for photolithography in semiconductor manufacturing 有权
标题翻译：半导体制造中的光刻系统和方法
公开(公告)号：US07501227B2
公开(公告)日：2009-03-10
申请号：US11216658
申请日：2005-08-31
申请人： Kuei Shun Chen , Chin-Hsiang Lin , David Ding-Chung Lu
发明人： Kuei Shun Chen , Chin-Hsiang Lin , David Ding-Chung Lu
IPC分类号： G03F7/20
CPC分类号： G03F7/70341 , G03F7/203 , G03F7/70466
摘要： A method for producing a pattern on a substrate includes providing at least one exposure of the pattern onto a layer of the substrate by a higher-precision lithography mechanism and providing at least one exposure of the pattern onto a layer of the substrate by a lower-precision lithography mechanism. The exposures can be done in either order, and additional exposures can be included. The higher-precision lithography mechanism can be immersion lithography and the lower-precision lithography mechanism can be dry lithography.
摘要翻译：用于在衬底上产生图案的方法包括通过更高精度的光刻机构将图案的至少一次曝光提供到衬底的层上，并且通过较低精度的光刻机提供图案的至少一次曝光到衬底的层上，精密光刻机制。曝光可以以任一顺序完成，并可以包括额外的曝光。高精度光刻机构可以是浸没式光刻技术，较低精度的光刻机构可以是干式光刻技术。

54. 发明授权

US07349070B2 Multiple level photolithography 有权
标题翻译：多级光刻
公开(公告)号：US07349070B2
公开(公告)日：2008-03-25
申请号：US11200421
申请日：2005-08-09
申请人： Brian Martin , John Perring , John Shannon
发明人： Brian Martin , John Perring , John Shannon
IPC分类号： G03B27/42 , G03B27/44 , G03B27/58
CPC分类号： G03F7/703 , G03F1/70 , G03F7/203 , G03F7/70466
摘要： A method is provided for performing photolithography on a substrate which has a first region on a lower level and a second region on an upper level, wherein a first pattern area exists within said first region, a second pattern area exists within said second region, and at least said first and second regions are coated with a photoresist, the method comprising: a) exposing the photoresist through a first mask so as to expose said first region including said first pattern area, and thus create a first pattern in said first pattern area, but not expose said second pattern area; and b) exposing the photoresist through a second mask so as to expose said second pattern area, and thus create a second pattern in said second pattern area, but not expose said first pattern area, and also to expose an area of said first region which lies adjacent said second region.
摘要翻译：提供了一种用于在具有下层的第一区域和上层的第二区域的基板上进行光刻的方法，其中在所述第一区域内存在第一图案区域，在所述第二区域内存在第二图案区域，并且至少所述第一和第二区域涂覆有光致抗蚀剂，所述方法包括：a）通过第一掩模曝光所述光致抗蚀剂，以便露出包括所述第一图案区域的所述第一区域，从而在所述第一图案区域中产生第一图案但不暴露所述第二图案区域; 以及b）通过第二掩模曝光光致抗蚀剂以暴露所述第二图案区域，从而在所述第二图案区域中产生第二图案，但不暴露所述第一图案区域，并且还暴露所述第一区域的区域，位于所述第二区域附近。

55. 发明申请

US20070134598A1 Manufacturing method of semiconductor device, and wafer and manufacturing method thereof 审中-公开
标题翻译：半导体装置及其制造方法及其制造方法
公开(公告)号：US20070134598A1
公开(公告)日：2007-06-14
申请号：US11405634
申请日：2006-04-18
申请人： Shigeru Iwamoto
发明人： Shigeru Iwamoto
IPC分类号： G03F7/20
CPC分类号： G03F7/203 , G03F1/00 , G03F7/70425 , G03F7/7065
摘要： A semiconductor device manufacturing method which makes it possible to accurately grasp chip positions on a wafer. The method comprises the steps of forming an uppermost layer wiring, a passivation film and a resist; exposing, using a reticle having formed thereon a pad pattern, exposure shot regions excluding one exposure shot region out of all exposure shot regions of the resist; exposing, using a reticle having formed thereon a pattern different from the pad pattern, the one remaining exposure shot region; developing the whole resist to form resist patterns; and etching the passivation film using the resist pattern as masks to respectively form a pad for a product chip and an opening section of a reference chip in the regions exposed using these different reticles. Thus, the product chip and the reference chip can be discriminated by image recognition so that chip positions on the wafer can be accurately grasped.
摘要翻译：一种使得可以准确地掌握晶片上的芯片位置的半导体器件制造方法。该方法包括形成最上层布线，钝化膜和抗蚀剂的步骤; 使用其上形成有焊盘图案的掩模版曝光，除了抗蚀剂的所有曝光拍摄区域中的一个曝光拍摄区域之外的曝光拍摄区域; 使用其上形成有与所述焊盘图案不同的图案的掩模版曝光所述一个剩余的曝光拍摄区域; 开发整个抗蚀剂以形成抗蚀剂图案; 并且使用抗蚀剂图案作为掩模蚀刻钝化膜，以在使用这些不同的掩模版露出的区域中分别形成用于产品芯片的焊盘和参考芯片的开口部分。因此，可以通过图像识别来区分产品芯片和参考芯片，从而可以准确地掌握晶片上的芯片位置。

56. 发明申请

US20070072133A1 Substrate, method of exposing a substrate, machine readable medium 失效
标题翻译：基板，曝光基板的方法，机器可读介质
公开(公告)号：US20070072133A1
公开(公告)日：2007-03-29
申请号：US11234399
申请日：2005-09-26
申请人： Alek Chen
发明人： Alek Chen
IPC分类号： G03F7/20
CPC分类号： G03F7/203 , G03F1/70 , G03F7/095 , G03F7/70466
摘要： A double exposure method for enhancing the image resolution in a lithographic system, is presented herein. The invention comprises decomposing a desired pattern to be printed on the substrate into at least two constituent sub-patterns that are capable of being optically resolved by the lithographic system, coating the substrate with a first positive tone resist layer and a thin second positive tone resist layer on top of a target layer which is to be patterned with the desired dense line pattern. The second resist material is absorbing exposure radiation during a first patterning exposure and after development during a second patterning exposure to prevent exposure above energy-to-clear of at least a portion of the first resist material underneath exposed portions of the second resist material layer.
摘要翻译：本文提出了用于增强光刻系统中的图像分辨率的双重曝光方法。本发明包括将要印刷的期望图案分解成能够由光刻系统光学分辨的至少两个组成子图案，用第一正色调抗蚀剂层和薄的第二正色调抗蚀剂涂覆基板在要用所需的密集线图案图案化的目标层的顶部上的层。第二抗蚀剂材料在第一图案化曝光期间和在第二图案化曝光期间的显影之后吸收曝光辐射，以防止暴露在第二抗蚀剂材料层的暴露部分下方的第一抗蚀剂材料的至少一部分的能量之上。

57. 发明申请

US20070072097A1 Substrate, method of exposing a substrate, machine readable medium 有权
标题翻译：基板，曝光基板的方法，机器可读介质
公开(公告)号：US20070072097A1
公开(公告)日：2007-03-29
申请号：US11526244
申请日：2006-09-25
申请人： Alek Chen
发明人： Alek Chen
IPC分类号： G03F7/20
CPC分类号： G03F7/203 , G03F1/70 , G03F7/095 , G03F7/70466
摘要： A multiple exposure method for enhancing the image resolution in a lithographic system is disclosed. The method comprises, for example, decomposing a desired pattern to be printed on the substrate into at least two constituent sub-patterns that are capable of being optically resolved by the lithographic system, coating the substrate with a positive tone resist layer and a relatively thin positive tone developable material layer on top of a target layer which is to be patterned with the desired dense feature pattern. The positive tone developable material absorbs exposure radiation during a first patterning exposure and, after development, during a second patterning exposure to prevent exposure of at least a portion of the positive tone resist layer, underneath exposed portions of the positive tone developable material layer, to an exposure dose above a fraction of an energy-to-clear exposure dose associated with the positive tone resist layer.
摘要翻译：公开了用于增强光刻系统中的图像分辨率的多重曝光方法。该方法包括例如将待印刷的期望图案分解成能够被光刻系统光学分辨的至少两个成分子图案，用正色调抗蚀剂层和相对薄的涂层涂覆基板正色调可显影材料层在目标层的顶部，其将被图案化以具有期望的密集特征图案。正色调显影材料在第一图案曝光期间吸收曝光辐射，并且在显影之后，在第二图案化曝光期间，以防止正色调抗蚀剂层的至少一部分在正色调可显影材料层的暴露部分的下方暴露于暴露剂量高于与正色调抗蚀剂层相关联的能量到清除曝光剂量的一部分。

58. 发明申请

US20070000866A1 Patterning and alteration of molecules 有权
标题翻译：分子的形成和改变
公开(公告)号：US20070000866A1
公开(公告)日：2007-01-04
申请号：US11401485
申请日：2006-04-10
申请人： Declan Ryan , Babak Amir-Parviz , Vincent Linder , Vincent Semetey , Samuel Sia , George Whitesides
发明人： Declan Ryan , Babak Amir-Parviz , Vincent Linder , Vincent Semetey , Samuel Sia , George Whitesides
IPC分类号： C23F1/00 , H01L21/302 , B44C1/22
CPC分类号： G03F7/165 , B01J2219/00605 , B01J2219/0061 , B01J2219/00612 , B01J2219/00626 , B01J2219/00628 , B01J2219/0063 , B01J2219/00637 , B01J2219/00659 , B82Y5/00 , B82Y30/00 , C03C17/28 , C03C23/0005 , C03C2218/32 , C40B80/00 , G03F7/203
摘要： The present invention provides a series of methods, compositions, and articles for patterning a surface with multiple, aligned layers of molecules, by exposing the molecules to electromagnetic radiation. In certain embodiments, a single photomask acts as an area-selective filter for light at multiple wavelengths. A single set of exposures of multiple wavelengths through this photomask may make it possible to fabricate a pattern comprising discontinuous multiple regions, where the regions differ from each other in at least one chemical and/or physical property, without acts of alignment between the exposures. In certain embodiments, the surface includes molecules attached thereto that can be photocleaved upon exposure to a certain wavelength of radiation, thereby altering the chemical composition on at least a portion of the surface. In some embodiments, the molecules attached to the surface may include thiol moieties (e.g., as in alkanethiol), by which the molecule can become attached to the surface. In some embodiments, the molecules may be terminated at the unattached end with photocleavable groups. In other embodiments, a molecule that was photocleaved may be exposed to another molecule that binds to the photocleaved molecule. In certain cases, the molecules may be terminated at the unattached end with hydrophilic groups that may, for example, be resistant to the adsorption of proteins. In other cases, the molecules may be terminated at the unattached end with end groups that are not resistant to the adsorption of proteins. In certain embodiments, the techniques are used to pattern simultaneously two different regions that are resistant to the adsorption of proteins, and a third region that does not resist the adsorption of proteins.
摘要翻译：本发明通过将分子暴露于电磁辐射来提供一系列方法，组合物和用于图案化具有多个对准的分子层的表面的制品。在某些实施例中，单个光掩模用作多个波长的光的区域选择滤光器。通过该光掩模的多组波长的一组曝光可以使得可以制造包括不连续多个区域的图案，其中区域在至少一种化学和/或物理性质上彼此不同，而不影响曝光之间的对准。在某些实施方案中，表面包括附着于其上的分子，其可以在暴露于一定波长的辐射时被光刻，从而改变表面的至少一部分上的化学组成。在一些实施方案中，连接到表面的分子可以包括硫醇部分（例如，如在链烷硫醇中），分子可以通过该分子附着到表面。在一些实施方案中，分子可以在不附着的端部用可光致发光的基团终止。在其它实施方案中，被光致剪切的分子可以暴露于结合光刻分子的另一个分子。在某些情况下，分子可以在亲水基团的末端被终止，所述亲水基团例如可以抵抗蛋白质的吸附。在其他情况下，分子可以在不附着于不附着蛋白质的端基的端基处终止。在某些实施方案中，所述技术用于同时模拟对蛋白质的吸附具有抗性的两个不同区域，以及不抵抗蛋白质吸附的第三区域。

59. 发明申请

US20060215143A1 Exposure apparatus and exposing method and method of manufacturing a printed wiring board 有权
标题翻译：曝光装置及曝光方法以及制造印刷电路板的方法
公开(公告)号：US20060215143A1
公开(公告)日：2006-09-28
申请号：US11370044
申请日：2006-03-08
申请人： Yoshihide Yamaguchi , Hiroshi Oyama
发明人： Yoshihide Yamaguchi , Hiroshi Oyama
IPC分类号： G03B27/72
CPC分类号： G03F7/70291 , G03F7/203 , G03F7/7005 , G03F7/70383 , G03F7/70466 , H05K3/0082
摘要： The mask-less exposure apparatus includes: a stage which moves with the substrate having a photosensitive resin layer with sensitivity to ultraviolet radiation formed thereon; a first light source for emitting light containing a wavelength component in the wavelength range of 300 to 410 nm; a first light irradiation optical system for modulating a radiant flux emitted from the first light source based on data of a desired exposure pattern to image a pattern on the photosensitive resin layer; a second light source for emitting light containing a wavelength component in the wavelength range of 450 to 2500 nm; and a second light irradiation optical system for guiding a radiant flux emitted from the second light source to a second light irradiation area that is set so as to include at least a first light irradiation area.
摘要翻译：无掩模曝光装置包括：具有对其上形成的紫外线辐射敏感的感光性树脂层的基板移动的台阶; 用于发射包含波长范围为300〜410nm的波长成分的光的第一光源; 第一光照射光学系统，用于基于期望的曝光图案的数据来调制从第一光源发射的辐射通量，以在感光性树脂层上成像; 第二光源，用于发射包含在波长范围为450至2500nm的波长分量的光; 以及第二光照射光学系统，用于将从第二光源发射的辐射通量引导到被设定为至少包括第一光照射区域的第二光照射区域。

60. 发明申请

US20060183059A1 System and method for absorbance modulation lithography 有权
标题翻译：吸光度调制光刻系统和方法
公开(公告)号：US20060183059A1
公开(公告)日：2006-08-17
申请号：US11331752
申请日：2006-01-13
申请人： Rajesh Menon , Henry Smith
发明人： Rajesh Menon , Henry Smith
IPC分类号： G03F7/00
CPC分类号： G03F7/70291 , G03F7/001 , G03F7/203 , G03F7/7005 , G03F7/70275 , G03F7/70316 , G03F7/70408 , G03F7/70466
摘要： A lithography system is disclosed that provides an array of areas of imaging electromagnetic energy that are directed toward a recording medium. The reversible contrast-enhancement material is disposed between the recording medium and the array of areas of imaging electromagnetic energy.
摘要翻译：公开了一种光刻系统，其提供朝向记录介质的成像电磁能的区域阵列。可逆对比度增强材料设置在记录介质和成像电磁能的区域阵列之间。

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