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1. 发明授权

US06949330B2 Multiple level photolithography 失效
标题翻译：多级光刻
公开(公告)号：US06949330B2
公开(公告)日：2005-09-27
申请号：US10231918
申请日：2002-08-30
申请人： Brian Martin , John Perring , John Shannon
发明人： Brian Martin , John Perring , John Shannon
IPC分类号： G03F7/20
CPC分类号： G03F7/703 , G03F1/70 , G03F7/203 , G03F7/70466
摘要： A method is provided for performing photolithography on a substrate which has a first region on a lower level and a second region on an upper level, wherein a first pattern area exists within said first region, a second pattern area exists within said second region, and at least said first and second regions are coated with a photoresist, the method comprising: a) exposing the photoresist through a first mask so as to expose said first region including said first pattern area, and thus create a first pattern in said first pattern area, but not expose said second pattern area; and b) exposing the photoresist through a second mask so as to expose said second pattern area, and thus create a second pattern in said second pattern area, but not expose said first pattern area, and also to expose an area of said first region which lies adjacent said second region.
摘要翻译：提供了一种用于在具有下层的第一区域和上层的第二区域的基板上进行光刻的方法，其中在所述第一区域内存在第一图案区域，在所述第二区域内存在第二图案区域，并且至少所述第一和第二区域涂覆有光致抗蚀剂，所述方法包括：a）通过第一掩模曝光所述光致抗蚀剂，以便露出包括所述第一图案区域的所述第一区域，从而在所述第一图案区域中产生第一图案但不暴露所述第二图案区域; 以及b）通过第二掩模曝光光致抗蚀剂以暴露所述第二图案区域，从而在所述第二图案区域中产生第二图案，但不暴露所述第一图案区域，并且还暴露所述第一区域的区域，位于所述第二区域附近。

2. 发明申请

US20060050255A1 Multiple level photolithography 有权
公开(公告)号：US20060050255A1
公开(公告)日：2006-03-09
申请号：US11200421
申请日：2005-08-09
申请人： Brian Martin , John Perring , John Shannon
发明人： Brian Martin , John Perring , John Shannon
IPC分类号： G03B27/42
CPC分类号： G03F7/703 , G03F1/70 , G03F7/203 , G03F7/70466
摘要： A method is provided for performing photolithography on a substrate which has a first region on a lower level and a second region on an upper level, wherein a first pattern area exists within said first region, a second pattern area exists within said second region, and at least said first and second regions are coated with a photoresist, the method comprising: a) exposing the photoresist through a first mask so as to expose said first region including said first pattern area, and thus create a first pattern in said first pattern area, but not expose said second pattern area; and b) exposing the photoresist through a second mask so as to expose said second pattern area, and thus create a second pattern in said second pattern area, but not expose said first pattern area, and also to expose an area of said first region which lies adjacent said second region.

3. 发明授权

US07349070B2 Multiple level photolithography 有权
标题翻译：多级光刻
公开(公告)号：US07349070B2
公开(公告)日：2008-03-25
申请号：US11200421
申请日：2005-08-09
申请人： Brian Martin , John Perring , John Shannon
发明人： Brian Martin , John Perring , John Shannon
IPC分类号： G03B27/42 , G03B27/44 , G03B27/58
CPC分类号： G03F7/703 , G03F1/70 , G03F7/203 , G03F7/70466
摘要： A method is provided for performing photolithography on a substrate which has a first region on a lower level and a second region on an upper level, wherein a first pattern area exists within said first region, a second pattern area exists within said second region, and at least said first and second regions are coated with a photoresist, the method comprising: a) exposing the photoresist through a first mask so as to expose said first region including said first pattern area, and thus create a first pattern in said first pattern area, but not expose said second pattern area; and b) exposing the photoresist through a second mask so as to expose said second pattern area, and thus create a second pattern in said second pattern area, but not expose said first pattern area, and also to expose an area of said first region which lies adjacent said second region.
摘要翻译：提供了一种用于在具有下层的第一区域和上层的第二区域的基板上进行光刻的方法，其中在所述第一区域内存在第一图案区域，在所述第二区域内存在第二图案区域，并且至少所述第一和第二区域涂覆有光致抗蚀剂，所述方法包括：a）通过第一掩模曝光所述光致抗蚀剂，以便露出包括所述第一图案区域的所述第一区域，从而在所述第一图案区域中产生第一图案但不暴露所述第二图案区域; 以及b）通过第二掩模曝光光致抗蚀剂以暴露所述第二图案区域，从而在所述第二图案区域中产生第二图案，但不暴露所述第一图案区域，并且还暴露所述第一区域的区域，位于所述第二区域附近。

4. 发明授权

US4621867A Easy entry seat adjuster 失效
标题翻译：轻松进入座椅调节器
公开(公告)号：US4621867A
公开(公告)日：1986-11-11
申请号：US720370
申请日：1985-04-04
申请人： John Perring , William J. Watkinson
发明人： John Perring , William J. Watkinson
IPC分类号： B60N2/06 , B60N2/08 , B60N2/12 , B60N2/20 , B60N1/04
CPC分类号： B60N2/123
摘要： An easy entry seat adjuster includes upper and lower track members which are slidable relative to each other. A latch carrier is slidably mounted on both track members and mounts a latch member having latch arms engageable within an opening of the upper track member and any one of a series of openings in the lower track member. Manual movement of the latch member out of engagement with an opening of the lower track member permits horizontal adjustment of the seat as the latch member carrier and upper track member move relative to the lower track member. Movement of the latch member out of engagement with the opening of the upper track member by a seat back actuated cam on the upper track member permits displacement of the upper track member between a horizontally adjusted position and easy entry position.
摘要翻译：容易进入座椅调节器包括可相对于彼此滑动的上和下轨道构件。闩锁支架可滑动地安装在两个轨道构件上并且安装具有可接合在上轨道构件的开口内的闩锁臂和下轨道构件中的一系列开口中的任一个的闩锁构件。当闩锁构件托架和上轨道构件相对于下轨道构件移动时，闩锁构件的手动移动与下轨道构件的开口脱离接合允许水平调节座椅。通过上轨道构件上的座椅靠背致动凸轮，闩锁构件与上轨道构件的开口脱离接合的运动允许上轨道构件在水平调节位置和容易进入位置之间移动。

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