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51. 发明授权

US07851110B2 Secure photomask with blocking aperture 有权
标题翻译：具有阻塞光圈的安全光掩模
公开(公告)号：US07851110B2
公开(公告)日：2010-12-14
申请号：US12105992
申请日：2008-04-18
申请人： Christopher J. Progler
发明人： Christopher J. Progler
IPC分类号： G03F1/00
CPC分类号： G03F1/40 , G03F1/38
摘要： A secure photomask including a substrate having one or more pattern layers formed thereon and a blocking aperture disposed below the one or more pattern layers that prevents at least one of unauthorized use and copying of the photomask.
摘要翻译：一种安全的光掩模，其包括其上形成有一个或多个图案层的基板和设置在一个或多个图案层下方的阻挡孔，其防止光掩模的未经授权的使用和复制中的至少一个。

52. 发明申请

US20100124710A1 Photomask 失效
标题翻译：光掩模
公开(公告)号：US20100124710A1
公开(公告)日：2010-05-20
申请号：US12585922
申请日：2009-09-29
申请人： Keisuke Hatano , Takeshi Matsunuma , Shinji Miyazawa
发明人： Keisuke Hatano , Takeshi Matsunuma , Shinji Miyazawa
IPC分类号： G03F1/00
CPC分类号： G03F1/40 , G03F1/50
摘要： A photomask includes a base, a plurality of chip pattern regions over which a light shielding pattern of a metal material is defined, the plurality of chip pattern regions being defined on the base, scribe regions defined between the chip pattern regions, the scribe regions being defined by using the light shielding pattern, and slits in which the light shielding pattern is not defined, the slits being defined so as to surround the chip pattern regions.
摘要翻译：光掩模包括基底，多个芯片图案区域，金属材料的遮光图案被限定在其上，所述多个芯片图案区域被限定在基底上，划线区域限定在芯片图案区域之间，划线区域为通过使用遮光图案限定，以及未限定遮光图案的狭缝，狭缝被限定为围绕芯片图案区域。

53. 发明授权

US07691547B2 Reticle containing structures for sensing electric field exposure and a method for its use 有权
标题翻译：用于感测电场暴露的掩模版包含结构及其使用方法
公开(公告)号：US07691547B2
公开(公告)日：2010-04-06
申请号：US11724715
申请日：2007-03-16
申请人： Gavin Charles Rider
发明人： Gavin Charles Rider
IPC分类号： G03F1/00 , G03C5/00
CPC分类号： G03F1/40 , G03F1/44
摘要： A reticle includes an image area having one or more electrically conductive portions susceptible to damage by an electric field and an electric field sensor feature, the sensor feature adapted to be at least as susceptible to being altered by the electric field as the electrically conductive portions of the image area, the sensor feature being located in a position which is more readily viewable to show alteration than the electrically conductive portions of the image area.
摘要翻译：掩模版包括具有一个或多个容易被电场损坏的导电部分和电场传感器特征的图像区域，所述传感器特征适于至少与电场一样容易被电场改变，因为传导部分的导电部分图像区域，传感器特征位于比图像区域的导电部分更易于观看以显示改变的位置。

54. 发明申请

US20080187843A1 PHOTOMASK AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE USING THE PHOTOMASK 有权
标题翻译：光电子和使用光电子学制造半导体器件的方法
公开(公告)号：US20080187843A1
公开(公告)日：2008-08-07
申请号：US12025250
申请日：2008-02-04
申请人： Naoyuki ISHIWATA
发明人： Naoyuki ISHIWATA
IPC分类号： G03F1/00 , G03F7/00
CPC分类号： G03F1/40
摘要： A photomask including a chip area and a shaded area with a first transmitting pattern located in the chip area forming a ring shape with a missing part, and a second transmitting pattern located in the shaded area having a shape corresponding to the missing part of the first transmitting pattern.
摘要翻译：一种光掩模，其包括芯片区域和具有位于芯片区域中的第一透射图案的阴影区域，其形成具有缺失部分的环形，以及位于阴影区域中的第二透射图案，其具有与第一透明图案的缺失部分相对应的形状传输模式。

55. 发明授权

US07338609B2 Partial edge bead removal to allow improved grounding during e-beam mask writing 有权
标题翻译：部分边缘珠去除以允许在电子束掩模写入期间改进接地
公开(公告)号：US07338609B2
公开(公告)日：2008-03-04
申请号：US11333678
申请日：2006-01-17
申请人： J. Brett Rolfson
发明人： J. Brett Rolfson
IPC分类号： B44C1/22 , C25F3/00 , G03F1/00
CPC分类号： G03F1/40 , G03F1/86
摘要： A method to provide a ground point for second, or subsequent, e-beam mask-writing steps by selectively removing the photoresist edge bead of a photomask substrate to expose the underlying chrome layer. The selective removal leaves at least one tab of photoresist edge bead over the chrome layer. After the first e-beam mask writing step and subsequent etch, the tab can be removed to expose a portion of the chromium layer that can act as a new ground point for a second e-beam etch. Also, a nozzle for use in selectively removing the edge bead to leave a tab of photoresist edge bead.
摘要翻译：通过选择性地去除光掩模衬底的光致抗蚀剂边缘以暴露下面的铬层来为第二或随后的电子束掩模写入步骤提供接地点的方法。选择性去除在铬层上留下光致抗蚀剂边缘珠的至少一个突片。在第一电子束掩模写入步骤和随后的蚀刻之后，可以去除突片以暴露可以充当第二电子束蚀刻的新接地点的铬层的一部分。而且，用于选择性地去除边缘珠以留下光致抗蚀剂边缘珠的突片的喷嘴。

56. 发明授权

US07226706B2 Modification of mask blank to avoid charging effect 有权
标题翻译：修改面罩空白以避免充电效果
公开(公告)号：US07226706B2
公开(公告)日：2007-06-05
申请号：US10441888
申请日：2003-05-20
申请人： Cheng-ming Lin
发明人： Cheng-ming Lin
IPC分类号： G03F1/00 , G03C5/00
CPC分类号： G03F1/40 , C23C14/048 , G03F1/54 , G03F1/78
摘要： A blank mask for photomasking patterns on an integrated circuit comprises a non-conductive substrate and a layer of conductive material deposited on the substrate covering substantially the entire surface of said substrate. Methods for preventing charge accumulation on a non-conductive region of a mask, which is not covered by a layer of conductive material, are provided. One method comprises controlling electron beams to prevent the beams from striking an outer region for an area more than 90 percent of the outer region when patterning a predetermined feature on the mask. The outer region comprises an area beginning from an edge of the mask and ending at 2 to 6 mm inward from the edge. Another method comprises using a blocker to prevent electron beams from hitting the outer region for an area more than 90 percent of the outer region when patterning a predetermined feature on the substrate.
摘要翻译：用于集成电路上的光掩模图案的空白掩模包括非导电衬底和沉积在衬底上的基本覆盖所述衬底的整个表面的导电材料层。提供了防止未被导电材料层覆盖的掩模的非导电区域上的电荷积聚的方法。一种方法包括在图案化掩模上的预定特征时，控制电子束以防止光束撞击外部区域超过外部区域的90％以上的区域。外部区域包括从掩模的边缘开始并从边缘向内延伸2至6mm的区域。另一种方法包括当图案化衬底上的预定特征时，使用阻挡剂来防止电子束撞击外部区域超过外部区域的90％的面积。

57. 发明授权

US07125755B2 Method and structure for electrostatic discharge protection of photomasks 有权
公开(公告)号：US07125755B2
公开(公告)日：2006-10-24
申请号：US10773597
申请日：2004-02-06
申请人： Kuei-Chi Kuo
发明人： Kuei-Chi Kuo
IPC分类号： H01L21/332 , H01L21/479
CPC分类号： G03F1/40 , Y10S438/945
摘要： A mask for manufacturing integrated circuits and use of the mask. The mask has a mask substrate. The mask also has an active mask region within a first portion of the mask substrate. The active region is adapted to accumulate a pre-determined level of static electricity. The mask also has a first guard ring structure surrounding a portion of the active mask region to isolate the active region from an outer region of the mask substrate and a second guard ring structure having at least one fuse structure surrounding a portion of the first guard ring structure. The fuse structure is operably coupled to the active region to absorb a current from static electricity. The static electricity is accumulated by the active region to the pre-determined level and being discharged as current to the fuse structure while maintaining the active region free from damage from the static electricity.

58. 发明申请

US20060216614A1 Method of mask making and structure thereof for improving mask ESD immunity 审中-公开
标题翻译：掩模制造方法及其结构，用于提高掩模的ESD抗扰度
公开(公告)号：US20060216614A1
公开(公告)日：2006-09-28
申请号：US11089061
申请日：2005-03-24
申请人： Shyh-Jen Guo , Yu Lo
发明人： Shyh-Jen Guo , Yu Lo
IPC分类号： G03C5/00 , G03F1/00
CPC分类号： G03F1/40 , G03F1/50 , G03F1/62
摘要： A method for fabricating a mask (or reticle) to improve the mask ESD immunity is provided. A substrate having an upper surface is substantially transparent to a selected radiation. A light sensitive layer is formed over the substrate. The light sensitive layer is patterned and etched to form a pattern of openings in the light sensitive layer. The substrate is etched according to the pattern of openings in the light sensitive layer. The light sensitive layer is stripped. An opaque layer is then deposited on the upper surface and in the openings of the patterned substrate. The substrate is planarized by removing excess opaque layer from over the upper surface of the substrate. A pellicle is then mounted outstretched on the upper surface of the substrate.
摘要翻译：提供了制造掩模（或掩模版）以提高掩模ESD抗扰度的方法。具有上表面的基底对所选择的辐射基本上是透明的。在衬底上形成光敏层。对感光层进行图案化和蚀刻，以在光敏层中形成开口图案。根据光敏层中的开口图案蚀刻衬底。剥去光敏层。然后在图案化衬底的上表面和开口中沉积不透明层。通过从衬底的上表面上去除多余的不透明层来平坦化衬底。然后将防护薄膜组件伸出到衬底的上表面上。

59. 发明授权

US06972832B1 Method of grounding a photoblank to a holding device 失效
标题翻译：将照相机接地到保持装置的方法
公开(公告)号：US06972832B1
公开(公告)日：2005-12-06
申请号：US09660899
申请日：2000-09-13
申请人： Gernot Gödl , Andreas Oelmann , Gerd Unger , Wolfgang Besenböck , Alois Reiter
发明人： Gernot Gödl , Andreas Oelmann , Gerd Unger , Wolfgang Besenböck , Alois Reiter
IPC分类号： G03F1/00 , G03F7/20 , H01J37/20 , G03B27/62 , G03B27/32 , G03F9/00 , G21G5/00
CPC分类号： G03F1/78 , G03F1/40 , H01J2237/004 , H01J2237/3175
摘要： A retaining device for photo blanks, comprising a retaining member (1) with a supporting surface (3) for a photo blank (4) and a ground element (10) which can be brought into contact with an electroconductive layer (6) of said photo blank. The ground element is provided with a contact tip (15) which can be manipulated in such a way that it can be lowered substantially onto the photo blank (4) without any lateral movement in relation to said photo blank which is inserted into the retaining device.
摘要翻译：一种用于照片坯料的保持装置，包括具有用于光致抗蚀剂（4）的支撑表面（3）的保持构件（1）和能够与所述电路板的导电层（6）接触的接地元件（10）照片空白接地元件设置有接触尖端（15），其可以以这样的方式操作，使得其可以基本上降低到照片坯料（4）上，而不会相对于插入保持装置中的所述照片坯料的任何横向移动。

60. 发明申请

US20050214654A1 ESD-resistant photomask and method of preventing mask ESD damage 有权
标题翻译：防静电光掩模和防止掩膜ESD损伤的方法
公开(公告)号：US20050214654A1
公开(公告)日：2005-09-29
申请号：US10810920
申请日：2004-03-26
申请人： Ching-Yu Chang
发明人： Ching-Yu Chang
IPC分类号： G03C5/00 , G03F1/14 , G03F9/00 , G21K5/10 , H01J37/08
CPC分类号： G03F1/60 , G03F1/40 , H01J2237/31794
摘要： An ESD-resistant photomask and method of preventing mask ESD damage is disclosed. The ESD-resistant photomask includes a mask substrate, a pattern-forming material provided on the substrate, a circuit pattern defined by exposure regions etched in the pattern-forming material, and positive or negative ions implanted into the mask substrate throughout ion implantation regions. The ions in the ion implantation regions dissipate electrostatic charges on the mask, thus preventing the buildup of electrostatic charges which could otherwise attract image-distorting particles to the mask or damage the mask.
摘要翻译：公开了一种防静电防护光掩模和防止掩膜ESD损伤的方法。防静电光掩模包括掩模基板，设置在基板上的图案形成材料，由在图案形成材料中蚀刻的曝光区域限定的电路图案，以及在离子注入区域中注入到掩模基板中的正或负离子。离子注入区域中的离子消耗掩模上的静电电荷，从而防止静电电荷的积累，否则可能会吸引图像变形颗粒到掩模或损坏掩模。

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