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1. 发明申请

US20100124710A1 Photomask 失效
标题翻译：光掩模
公开(公告)号：US20100124710A1
公开(公告)日：2010-05-20
申请号：US12585922
申请日：2009-09-29
申请人： Keisuke Hatano , Takeshi Matsunuma , Shinji Miyazawa
发明人： Keisuke Hatano , Takeshi Matsunuma , Shinji Miyazawa
IPC分类号： G03F1/00
CPC分类号： G03F1/40 , G03F1/50
摘要： A photomask includes a base, a plurality of chip pattern regions over which a light shielding pattern of a metal material is defined, the plurality of chip pattern regions being defined on the base, scribe regions defined between the chip pattern regions, the scribe regions being defined by using the light shielding pattern, and slits in which the light shielding pattern is not defined, the slits being defined so as to surround the chip pattern regions.
摘要翻译：光掩模包括基底，多个芯片图案区域，金属材料的遮光图案被限定在其上，所述多个芯片图案区域被限定在基底上，划线区域限定在芯片图案区域之间，划线区域为通过使用遮光图案限定，以及未限定遮光图案的狭缝，狭缝被限定为围绕芯片图案区域。

2. 发明授权

US08007962B2 Photomask 失效
标题翻译：光掩模
公开(公告)号：US08007962B2
公开(公告)日：2011-08-30
申请号：US12585922
申请日：2009-09-29
申请人： Keisuke Hatano , Takeshi Matsunuma , Shinji Miyazawa
发明人： Keisuke Hatano , Takeshi Matsunuma , Shinji Miyazawa
IPC分类号： G03F1/00 , G03F1/08
CPC分类号： G03F1/40 , G03F1/50
摘要： A photomask includes a base, a plurality of chip pattern regions over which a light shielding pattern of a metal material is defined, the plurality of chip pattern regions being defined on the base, scribe regions defined between the chip pattern regions, the scribe regions being defined by using the light shielding pattern, and slits in which the light shielding pattern is not defined, the slits being defined so as to surround the chip pattern regions.
摘要翻译：光掩模包括基底，多个芯片图案区域，金属材料的遮光图案被限定在其上，所述多个芯片图案区域被限定在基底上，划线区域限定在芯片图案区域之间，划线区域为通过使用遮光图案限定，以及未限定遮光图案的狭缝，狭缝被限定为围绕芯片图案区域。

3. 发明授权

US08981515B2 Solid-state imaging device and electronic apparatus 有权
标题翻译：固态成像装置和电子装置
公开(公告)号：US08981515B2
公开(公告)日：2015-03-17
申请号：US13534309
申请日：2012-06-27
申请人： Keisuke Hatano , Atsushi Toda
发明人： Keisuke Hatano , Atsushi Toda
IPC分类号： H01L31/00 , H01L27/146
CPC分类号： H01L27/14647 , H01L27/14621 , H01L27/1464
摘要： A solid-state imaging device includes a plurality of photoelectric conversion regions stacked at different depths within a semiconductor substrate of each pixel to photoelectrically convert light of different wavelength bands, and a discharge region formed between the photoelectric conversion regions adjacent to each other in a depth direction of the semiconductor substrate to discharge charges generated by photoelectric conversion in regions between the photoelectric conversion regions.
摘要翻译：固态成像装置包括多个光电转换区域，该多个光电转换区域堆叠在每个像素的半导体衬底内的不同深度处，以对不同波长带的光进行光电转换，并且形成在彼此相邻的光电转换区域之间的放电区域方向来放电在光电转换区域之间的区域中通过光电转换产生的电荷。

4. 发明授权

US06559509B1 Semiconductor device protection circuit whose operation is stabilized 失效
标题翻译：半导体器件保护电路的工作稳定
公开(公告)号：US06559509B1
公开(公告)日：2003-05-06
申请号：US09651103
申请日：2000-08-30
申请人： Keisuke Hatano , Yasutaka Nakashiba
发明人： Keisuke Hatano , Yasutaka Nakashiba
IPC分类号： H01L218238
CPC分类号： H01L27/0259
摘要： A semiconductor device protection circuit is composed of a first semiconductor portion of a first conductive type, a second semiconductor portion of a second conductive type connected to the first semiconductor portion, a third semiconductor portion of the first conductive type connect to the second semiconductor portion, and fourth and fifth semiconductor portions of the second conductive type, both connected to the second semiconductor portion. The first conductive portion is connected to a semiconductor circuit which is to be protected from electrostatic breakdown. The third, fourth, and fifth semiconductor portions are short-circuited. The fourth and fifth semiconductor portions are located at opposite sides of the third semiconductor portion.
摘要翻译：半导体器件保护电路由第一导电类型的第一半导体部分，与第一半导体部分连接的第二导电类型的第二半导体部分，第一导电类型的第三半导体部分连接到第二半导体部分，第二导电类型的第四和第五半导体部分都连接到第二半导体部分。第一导电部分连接到要被防止静电击穿的半导体电路。第三，第四和第五半导体部分被短路。第四和第五半导体部分位于第三半导体部分的相对侧。

5. 发明授权

US06399485B1 Semiconductor device with silicide layers and method of forming the same 有权
标题翻译：具有硅化物层的半导体器件及其形成方法
公开(公告)号：US06399485B1
公开(公告)日：2002-06-04
申请号：US09628435
申请日：2000-07-28
申请人： Keisuke Hatano , Tsuyoshi Nagata
发明人： Keisuke Hatano , Tsuyoshi Nagata
IPC分类号： H01L2144
CPC分类号： H01L27/14643 , H01L21/28518 , H01L27/14609 , H01L27/14689 , H01L29/665
摘要： The present invention provides a semiconductor device having: at least a first diffusion layer having a first impurity concentration; at least a second diffusion layer having a first impurity concentration which is lower than the first impurity concentration, and the first and second diffusion layers being of the same conductivity type, wherein a silicide layer is formed over the first diffusion layer, while no silicide layer is formed over the second diffusion layer.
摘要翻译：本发明提供一种半导体器件，其具有：至少第一杂质浓度的第一扩散层; 至少第二扩散层，其具有低于第一杂质浓度的第一杂质浓度，第一和第二扩散层具有相同的导电类型，其中在第一扩散层上形成硅化物层，而没有硅化物层形成在第二扩散层上。

6. 发明申请

US20130009263A1 SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS 有权
标题翻译：固态成像装置和电子装置
公开(公告)号：US20130009263A1
公开(公告)日：2013-01-10
申请号：US13534309
申请日：2012-06-27
申请人： Keisuke Hatano , Atsushi Toda
发明人： Keisuke Hatano , Atsushi Toda
IPC分类号： H01L27/146
CPC分类号： H01L27/14647 , H01L27/14621 , H01L27/1464
摘要： A solid-state imaging device includes a plurality of photoelectric conversion regions stacked at different depths within a semiconductor substrate of each pixel to photoelectrically convert light of different wavelength bands, and a discharge region formed between the photoelectric conversion regions adjacent to each other in a depth direction of the semiconductor substrate to discharge charges generated by photoelectric conversion in regions between the photoelectric conversion regions.
摘要翻译：固态成像装置包括多个光电转换区域，该多个光电转换区域堆叠在每个像素的半导体衬底内的不同深度处，以对不同波长带的光进行光电转换，并且形成在彼此相邻的光电转换区域之间的放电区域方向来放电在光电转换区域之间的区域中通过光电转换产生的电荷。

7. 发明授权

US07122902B2 Semiconductor device 有权
公开(公告)号：US07122902B2
公开(公告)日：2006-10-17
申请号：US10127266
申请日：2002-04-22
申请人： Keisuke Hatano , Takahisa Abiru
发明人： Keisuke Hatano , Takahisa Abiru
IPC分类号： H01L23/48
CPC分类号： H01L24/05 , H01L23/53223 , H01L23/53238 , H01L24/03 , H01L2224/02166 , H01L2224/05073 , H01L2224/05187 , H01L2224/05624 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01078 , H01L2924/04941 , H01L2924/05042 , H01L2924/14 , H01L2924/19043 , H01L2924/04953
摘要： A semiconductor device according to the present invention comprises a substrate; a copper interconnect layer formed on the top surface side of the substrate; an aluminum bonding pad formed on the top surface side of the copper interconnect layer with an aluminum-based material; and an aluminum interconnect formed on the top surface side of the copper interconnect layer with an aluminum-based material.

8. 发明授权

US06747355B2 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06747355B2
公开(公告)日：2004-06-08
申请号：US10196430
申请日：2002-07-17
申请人： Takahisa Abiru , Keisuke Hatano
发明人： Takahisa Abiru , Keisuke Hatano
IPC分类号： H01L2348
CPC分类号： H01L24/03 , H01L23/5226 , H01L23/53238 , H01L24/11 , H01L2224/0401 , H01L2224/05073 , H01L2224/05147 , H01L2224/05187 , H01L2224/05624 , H01L2224/13099 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/04941 , H01L2924/05042 , H01L2924/04953
摘要： A connection via hole is formed in an inter layer insulation film that covers a copper pad. Copper is formed within the connection via hole to form a connection copper via metal. An aluminum pad having a barrier metal thereunder for preventing reaction between copper and aluminum is formed on the connection copper via metal, thereby electrically connecting the copper pad and the aluminum pad to each other through the connection copper via metal. A step formed by the connection via hole that is formed in the inter layer insulation film is made substantially equal to zero with the aid of the connection copper via metal and at the same time, a film thickness of aluminum constituting the aluminum pad is reduced, thereby reducing manufacturing cost of the semiconductor device. Moreover, even when the connection copper via metal directly lying under the aluminum pad is oxidized, oxidation of the copper pad can be prevented, thereby advantageously preventing the breaking of copper interconnects connected to the copper pad and improving reliability of the semiconductor device.
摘要翻译：在覆盖铜焊盘的层间绝缘膜中形成连接通孔。在连接通孔内形成铜，以形成金属铜连接。在金属连接铜上形成有用于防止铜和铝之间的反应的具有阻挡金属的铝焊盘，从而通过金属铜连接铜焊盘和铝焊盘彼此。通过形成在层间绝缘膜中的连接通孔形成的台阶借助于铜通孔金属的连接基本上等于零，同时，减少了构成铝焊盘的铝的膜厚度，从而降低半导体器件的制造成本。此外，即使当直接位于铝焊盘下方的铜通孔金属的连接被氧化时，也可以防止铜焊盘的氧化，从而有利地防止连接到铜焊盘的铜互连的断裂并提高半导体器件的可靠性。

9. 发明授权

US06518605B1 Solid state imaging pickup device and method for manufacturing the same 失效
标题翻译：固态成像拾取装置及其制造方法
公开(公告)号：US06518605B1
公开(公告)日：2003-02-11
申请号：US09770188
申请日：2001-01-29
申请人： Keisuke Hatano , Masayuki Furumiya , Toru Kawasaki
发明人： Keisuke Hatano , Masayuki Furumiya , Toru Kawasaki
IPC分类号： H01L29768
CPC分类号： H01L27/14603 , H01L27/14692
摘要： A solid state imaging pickup device with a single-layer electrode structure which eliminates the release area at the terminal part of the charge transfer electrodes by surrounding the charge transfer electrodes with a dummy pattern, or with a pattern formed by connecting the charge transfer electrodes of a certain phase with each other at the outermost periphery. Surrounding the charge transfer electrode improves embedding performance when an insulating film is re-flowed for flattening inter-electrode gaps. This enables formation of a good metal wire or shielding film with no step-cut, thus improving the reliability of a solid state imaging pickup device.
摘要翻译：一种具有单层电极结构的固态成像拾取装置，其通过用虚拟图案围绕电荷转移电极或通过连接电荷转移电极形成的图案来消除电荷转移电极的末端部分处的释放区域在最外周彼此相邻。围绕电荷转移电极，当绝缘膜被再流动以使平板化的电极间间隙时，可提高嵌入性能。这样可以形成没有阶梯切割的良好的金属线或屏蔽膜，从而提高了固态成像拾取装置的可靠性。

10. 发明授权

US06452243B1 Solid state image sensor and method for fabricating the same 失效
标题翻译：固态图像传感器及其制造方法
公开(公告)号：US06452243B1
公开(公告)日：2002-09-17
申请号：US09467604
申请日：1999-12-20
申请人： Keisuke Hatano , Yasutaka Nakashiba
发明人： Keisuke Hatano , Yasutaka Nakashiba
IPC分类号： H01L3100
CPC分类号： H01L27/14689 , H01L27/14806
摘要： In a solid state image sensor, transfer electrodes are formed by selectively etch-removing a single layer of conducting electrode material at a plurality of first regions which divide the single layer of conducting electrode material in a row direction for each one pixel. A patterned mask is formed to cover the first regions and the single layer of conducting electrode material but to expose the single layer of conducting electrode material at a second region above each of the photoelectric conversion sections, and the single layer of conducting electrode material is selectively etch-removed using the patterned mask as a mask. Thereafter, a first conductivity type impurity and a second conductivity type impurity are ion-implanted using the patterned mask and the single layer of conducting electrode material as a mask, to form the photoelectric conversion section at the second region.
摘要翻译：在固态图像传感器中，通过在多个第一区域选择性地蚀刻去除单层导电电极材料，形成传输电极，该多个第一区域将导电电极材料的单层沿行方向划分成每一个像素。形成图案化掩模以覆盖第一区域和单层导电电极材料，但是在每个光电转换部分上方的第二区域处暴露单层导电电极材料，并且单层导电电极材料选择性地使用图案化掩模作为掩模蚀刻去除。此后，使用图案化掩模和单层导电电极材料作为掩模将第一导电类型杂质和第二导电类型杂质离子注入，以在第二区域形成光电转换部。

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