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51. 发明授权

US06709791B1 Halftone phase shift photomask and blanks for halftone phase shift photomask for it and pattern forming method using this 有权
标题翻译：半色调相移光掩模和用于其的半色调相移光掩模的坯料以及使用其的图案形成方法
公开(公告)号：US06709791B1
公开(公告)日：2004-03-23
申请号：US09807276
申请日：2001-04-10
申请人： Hiroshi Mohri , Toshiaki Motonaga , Chiaki Hatsuta , Norihito Ito , Naoya Hayashi , Toshio Onodera , Takahiro Matsuo , Toru Ogawa , Keisuke Nakazawa
发明人： Hiroshi Mohri , Toshiaki Motonaga , Chiaki Hatsuta , Norihito Ito , Naoya Hayashi , Toshio Onodera , Takahiro Matsuo , Toru Ogawa , Keisuke Nakazawa
IPC分类号： G03F900
CPC分类号： G03F1/32 , G03F1/26 , G03F1/34
摘要： The invention relates to a halftone phase shift photomask whose transmittance and phase angle remain unchanged even when irradiated with an excimer laser used for exposure over an extended period of time, and a blank therefor, and provides a halftone phase shift mask 108 comprising a pattern of halftone phase shift film 102 containing at least chromium and fluorine on a transparent substrate 101, wherein optical characteristic changes upon irradiation with an exposure excimer laser have been reduced by patterning a film irradiated with light 109 having a wavelength substantially absorbed by halftone phase shift film 102.
摘要翻译：本发明涉及一种半色调相移光掩模，其透射率和相位角即使在用于长时间曝光的受激准分子激光器照射时也保持不变，并且提供了一种空白，并提供了一种半色调相移掩模108，其包括在透明基板101上含有至少铬和氟的半色调相移膜102，其中通过曝光准分子激光器照射时的光学特性变化已经减少了通过半色调相移膜102基本吸收的波长的光109照射的图案。

52. 发明申请

US20040048168A1 Chromeless photomask, method of manufacturing the same, and exposure apparatus comprising the chromeless photomask 失效
标题翻译：无色光掩模，其制造方法以及包含无色光掩模的曝光装置
公开(公告)号：US20040048168A1
公开(公告)日：2004-03-11
申请号：US10407462
申请日：2003-04-07
发明人： Dong-Hoon Chung , Jin-Hyung Park
IPC分类号： G03F001/00 , G03B027/00 , G03B027/54 , G03F001/08 , G03F007/20
CPC分类号： G03F1/34
摘要： A chromeless photomask includes a main pattern portion and a complementary pattern portion formed in the surface of the transparent mask substrate adjacent to an outer peripheral edge of the main pattern portion. The main pattern and complementary portions are each formed by recessing a surface of a transparent mask substrate to produce respective protrusions and recesses that induce a phase difference of 180 degrees in light rays passing therethrough. The complementary pattern portion is designed to produce interference that prevents distortion in the photoresist pattern formed at a region by and corresponding to the edge of the main pattern portion of the photomask. Accordingly, the present invention provides for a relatively large secondary mask alignment margin.
摘要翻译：无铬光掩模包括形成在与图案部分的外周边缘相邻的透明掩模基板的表面中的主图案部分和互补图案部分。主图案和互补部分各自通过使透明掩模基板的表面凹陷来形成相应的突起和凹部，其在通过其的光线中引起180度的相位差。互补图案部分被设计成产生干涉，防止在光掩模的主图案部分的边缘处形成的区域处形成的光致抗蚀剂图案的失真。因此，本发明提供了相对较大的二次掩模对准边缘。

53. 发明申请

US20040043304A1 Reticles and methods of forming and using the same 失效
标题翻译：织物及其形成和使用方法
公开(公告)号：US20040043304A1
公开(公告)日：2004-03-04
申请号：US10230946
申请日：2002-08-29
发明人： Byron N. Burgess , William A. Stanton
IPC分类号： G03F001/00 , G03B027/00
CPC分类号： G03F1/36 , G03B27/00 , G03F1/34
摘要： Reticles having reticle patterns suitable for reducing edge of array effects are provided. The reticle patterns may have transmission patterns etched in the periphery areas of the reticle patterns. Systems incorporating the reticles are also provided. Additionally, methods of forming and using the reticles are provided. It is emphasized that this abstract is provided to comply with the rules requiring an abstract which will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that is will not be used to interpret or limit the scope or meaning of the claims.
摘要翻译：提供了具有适于减少阵列效应边缘的掩模版图案的网状物。标线图案可以具有在标线图案的周边区域中蚀刻的透射图案。还提供了包含标线的系统。此外，提供了形成和使用掩模版的方法。要强调的是，该摘要被提供以符合要求摘要的规则，这将允许搜索者或其他读者快速确定技术公开的主题。提交的理解是不会用于解释或限制权利要求的范围或含义。

54. 发明授权

US06664032B2 Method of producing two-dimensional phase type optical element 失效
公开(公告)号：US06664032B2
公开(公告)日：2003-12-16
申请号：US09504592
申请日：2000-02-15
申请人： Ichiro Tanaka
发明人： Ichiro Tanaka
IPC分类号： G03C500
CPC分类号： G03F7/001 , G02B5/32 , G03F1/28 , G03F1/34 , G03F1/58
摘要： Disclosed is a method of producing a two-dimensional phase type optical element, wherein a first mask and a second mask made of different materials and both having a stripe-like shape are superposedly formed on a substrate, along different directions, respectively, and wherein positions of all levels to be defined are determined on the basis of at least one of the first and second masks.

55. 发明授权

US06645677B1 Dual layer reticle blank and manufacturing process 失效
公开(公告)号：US06645677B1
公开(公告)日：2003-11-11
申请号：US09664288
申请日：2000-09-18
申请人： Torbjörn Sandström
发明人： Torbjörn Sandström
IPC分类号： G03F900
CPC分类号： G03F7/2053 , G03F1/26 , G03F1/34 , G03F1/78 , G03F7/094 , Y10S430/143
摘要： The present invention relates to preparation of patterned reticles to be used as masks in the production of semiconductor and other devices. Methods and devices are described utilizing resist and transfer layers over a masking layer on a reticle. The methods and devices produce small feature dimensions in masks and phase shift masks. The methods described for masks are in many cases applicable to the direct writing on other workpieces having similarly small features, such as semiconductor, cryogenic, magnetic and optical microdevices.

56. 发明申请

US20030205658A1 Methods of inspecting a lithography template 有权
标题翻译：检查光刻模板的方法
公开(公告)号：US20030205658A1
公开(公告)日：2003-11-06
申请号：US10293919
申请日：2002-11-13
申请人： Molecular Imprints, Inc.
发明人： Ronald D. Voisin
IPC分类号： B29C033/00 , G03F007/20 , G03F007/40 , G06K009/00 , G01N021/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , G03F1/34 , G03F7/0017 , G03F7/093
摘要： A method for forming imprint lithography templates is described herein. The method includes forming a masking layer and a conductive layer on a substrate surface. The use of a conductive layer allows patterning of the masking layer using electron beam pattern generators. The substrate is etched using the patterned masking layer to produce a template.
摘要翻译：本文描述了形成压印光刻模板的方法。该方法包括在基板表面上形成掩模层和导电层。使用导电层允许使用电子束图案发生器图案化掩模层。使用图案化掩模层蚀刻衬底以产生模板。

57. 发明授权

US06605396B2 Resolution enhancement for alternating phase shift masks 有权
标题翻译：交替相移掩模的分辨率增强
公开(公告)号：US06605396B2
公开(公告)日：2003-08-12
申请号：US09923527
申请日：2001-08-06
申请人： Uwe Paul Schroeder , Tobias Mono , Veit Klee
发明人： Uwe Paul Schroeder , Tobias Mono , Veit Klee
IPC分类号： G03F900
CPC分类号： G03F1/34 , G03F1/32
摘要： An alternating phase shift mask (400) and method of manufacturing thereof including assist edges (450) and (452) surrounding a main phase edge (420). Assist edges (450) and (452) improve the resolution of the alternating phase shift mask (400), thus enabling the patterning of smaller size features on a semiconductor wafer.
摘要翻译：一种交替相移掩模（400）及其制造方法，包括围绕主相边缘（420）的辅助边缘（450）和（452）。辅助边缘（450）和（452）提高交替相移掩模（400）的分辨率，因此能够对半导体晶片上的较小尺寸特征图案化。

58. 发明申请

US20030148193A1 Photomask for off-axis illumination and method of fabricating the same 有权
标题翻译：用于离轴照明的光掩模及其制造方法
公开(公告)号：US20030148193A1
公开(公告)日：2003-08-07
申请号：US10216925
申请日：2002-08-13
发明人： In-Kyun Shin , Jung-Min Sohn , Hee-Sun Yoon , Seong-Woon Choi
IPC分类号： G03F009/00 , G03C005/00 , B05D003/04 , B05D003/10
CPC分类号： G03F7/70125 , G03F1/34 , G03F1/50
摘要： A photomask that is capable of implementing off-axis illumination (OAI), and a method of fabricating the same, are provided. The photomask includes a transparent substrate, a plurality of opaque patterns formed on the front surface of the transparent substrate, for defining a floodlighting portion for forming patterns, and a plurality of phase gratings formed on the back surface of the transparent substrate, allowing off-axis illumination (OAI) of an incident light source beyond the OAI limit of exposure equipment, allowing use in the outmost region of an aperture, and allowing modified illumination having a shape suitable for the layout of the opaque patterns.
摘要翻译：提供能够实现离轴照明（OAI）的光掩模及其制造方法。光掩模包括透明基板，形成在透明基板的前表面上的多个不透明图案，用于限定用于形成图案的泛光部分，以及形成在透明基板的背面上的多个相位光栅，入射光源的轴向照明（OAI）超过曝光设备的OAI限制，允许在孔的最外部区域使用，并允许具有适于布局不透明图案的形状的改进的照明。

59. 发明申请

US20030128929A1 Method for fabricating chirped fiber Bragg gratings 有权
标题翻译：用于制造啁啾光纤布喇格光栅的方法
公开(公告)号：US20030128929A1
公开(公告)日：2003-07-10
申请号：US10369262
申请日：2003-02-19
申请人： Photronics, Inc.
发明人： James Owen Unruh
IPC分类号： G02B006/34
CPC分类号： G02B6/02085 , G02B6/02138 , G03F1/34 , G03F7/0005
摘要： A chirped Bragg grating is fabricated in an optical fiber by exposing the fiber to a coherent beam of light through a parallel phase mask having a series of progressively chirped segments produced on a lithography tool. The chirped phase mask is fabricated by exposing a photoresist-coated substrate to an image writing element such as an electron beam or a laser according to a set of parameters provided to the lithography tool. The parameters include a basic grating pattern for each segment, a value that defines the expansion or contraction of the grating pattern and an axis location to which the grating pattern is to be written to the substrate. By selecting machine commands that implement these parameters with a minimum throughput overhead, the mask can be produced in a reduced time, and therefore with increased accuracy.
摘要翻译：通过在光刻工具上产生的具有一系列逐渐啁啾线段的平行相位掩模将光纤暴露于相干光束，在光纤中制造啁啾布拉格光栅。通过根据提供给光刻工具的一组参数将光致抗蚀剂涂覆的基板暴露于诸如电子束或激光器的图像写入元件来制造啁啾相位掩模。参数包括每个段的基本光栅图案，限定光栅图案的扩展或收缩的值以及将光栅图案写入基板的轴位置。通过选择以最小吞吐量开销来实现这些参数的机器命令，可以在减少的时间内产生掩模，因此可以提高精度。

60. 发明授权

US06567588B2 Method for fabricating chirped fiber bragg gratings 有权
公开(公告)号：US06567588B2
公开(公告)日：2003-05-20
申请号：US09940947
申请日：2001-08-28
申请人： James Owen Unruh
发明人： James Owen Unruh
IPC分类号： G02B634
CPC分类号： G02B6/02085 , G02B6/02138 , G03F1/34 , G03F7/0005
摘要： A chirped Bragg grating is fabricated in an optical fiber by exposing the fiber to a coherent beam of light through a parallel phase mask having a series of progressively chirped segments produced on a lithography tool. The chirped phase mask is fabricated by exposing a photoresist-coated substrate to an image writing element such as an electron beam or a laser according to a set of parameters provided to the lithography tool. The parameters include a basic grating pattern for each segment, a value that defines the expansion or contraction of the grating pattern and an axis location to which the grating pattern is to be written to the substrate. By selecting machine commands that implement these parameters with a minimum throughput overhead, the mask can be produced in a reduced time, and therefore with increased accuracy.

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