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51. 发明授权

US07170789B2 Semiconductor storage device and electronic equipment 有权
标题翻译：半导体存储设备和电子设备
公开(公告)号：US07170789B2
公开(公告)日：2007-01-30
申请号：US11213927
申请日：2005-08-30
申请人： Hiroshi Iwata , Yoshifumi Yaoi , Akihide Shibata
发明人： Hiroshi Iwata , Yoshifumi Yaoi , Akihide Shibata
IPC分类号： G11C11/34 , G11C7/00
CPC分类号： G11C16/28 , G11C7/14
摘要： Characteristic fluctuation of a reference cell due to read disturb is prevented. A memory cell 27m and a reference cell 27r respectively have memory function bodies that are formed on both sides of a gate electrode and have a function to retain electric charge or polarization. The memory cell 27m can store independent information pieces in memory function bodies 27mr and 27ml located on both sides of the gate electrode and the independent information pieces are read therefrom. On the other hand, in the reference cell 27r, only the information piece stored in a memory function body 27rl located on one side of the gate electrode is referred to in a sense amplifier 22.
摘要翻译：防止由于读取干扰引起的参考单元的特性波动。存储单元27m和参考单元27r分别具有形成在栅电极的两侧上并具有保持电荷或极化的功能的记忆功能体。存储单元27m可以将独立的信息块存储在位于栅电极两侧的存储器功能体27mr和27ml中，并从其中读取独立的信息。另一方面，在参考单元27r中，在读出放大器22中仅参考存储在位于栅电极一侧的存储器功能体27r1中的信息片。

52. 发明授权

US07129539B2 Semiconductor storage device and manufacturing method therefor, semiconductor device, portable electronic equipment and IC card 有权
公开(公告)号：US07129539B2
公开(公告)日：2006-10-31
申请号：US10844474
申请日：2004-05-13
申请人： Hiroshi Iwata , Takayuki Ogura , Akihide Shibata , Kouichirou Adachi
发明人： Hiroshi Iwata , Takayuki Ogura , Akihide Shibata , Kouichirou Adachi
IPC分类号： H01L29/792
CPC分类号： H01L27/11568 , G11C16/0491 , H01L21/28282 , H01L21/28291 , H01L21/76831 , H01L21/76897 , H01L27/115 , H01L29/42332 , H01L29/6656 , H01L29/66833 , H01L29/7887 , H01L29/7923 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor storage device includes a field effect transistor which has a gate insulator, a gate electrode and a pair of source/drain diffusion regions on a semiconductor substrate. The device also includes a coating film made of a dielectric having a function of storing electric charge and formed on the substrate in such a manner as to cover an upper surface and side surfaces of the gate electrode. The device further includes an interlayer insulator formed on and in contact with the coating film. The device still further includes contact members which extend vertically through the interlayer insulator and the coating film on the source/drain diffusion regions and which are electrically connected to the source/drain diffusion regions, respectively. The coating film and the interlayer insulator are made of materials which are selectively etchable to each other. Thus, the issues of overerase and read failures due to the overerase can be solved, and the device reliability can be enhanced.

53. 发明授权

US06787410B2 Semiconductor device having dynamic threshold transistors and element isolation region and fabrication method thereof 失效
标题翻译：具有动态阈值晶体管和元件隔离区域的半导体器件及其制造方法
公开(公告)号：US06787410B2
公开(公告)日：2004-09-07
申请号：US10322663
申请日：2002-12-19
申请人： Hiroshi Iwata , Akihide Shibata , Seizo Kakimoto
发明人： Hiroshi Iwata , Akihide Shibata , Seizo Kakimoto
IPC分类号： H01L218238
CPC分类号： H01L21/76229 , H01L21/823807 , H01L29/783
摘要： A semiconductor device with dynamic threshold transistors includes a complex element isolation region composed of a shallow element isolation region made of shallow trench isolation and deep element isolation regions provided on both sides of the shallow element isolation region. Since the shallow element isolation region is made of the shallow trench isolation, Bird's beak in the shallow element isolation region is small. This prevents off leakage failure due to stress caused by the bird's beak. The deep element isolation region has an approximately constant width which allows the complex element isolation region to be wide.
摘要翻译：具有动态阈值晶体管的半导体器件包括由浅沟槽隔离构成的浅元件隔离区域和设置在浅元件隔离区域两侧的深元件隔离区域构成的复合元件隔离区域。由于浅元件隔离区域由浅沟槽隔离构成，浅元件隔离区域中的鸟喙小。这可以防止由于鸟嘴引起的应力引起的泄漏故障。深元件隔离区域具有近似恒定的宽度，其允许复杂元件隔离区域宽。

54. 发明申请

US20130221385A1 LIGHT EMITTING ELEMENT AND PRODUCTION METHOD FOR SAME, PRODUCTION METHOD FOR LIGHT-EMITTING DEVICE, ILLUMINATION DEVICE, BACKLIGHT, DISPLAY DEVICE, AND DIODE 有权
标题翻译：发光元件及其制造方法，发光装置的制造方法，照明装置，背光，显示装置和二极管
公开(公告)号：US20130221385A1
公开(公告)日：2013-08-29
申请号：US13820081
申请日：2011-06-22
申请人： Akihide Shibata , Tetsu Negishi , Kenji Komiya , Yoshifumi Yaoi , Takeshi Shiomi , Hiroshi Iwata , Akira Takahashi
发明人： Akihide Shibata , Tetsu Negishi , Kenji Komiya , Yoshifumi Yaoi , Takeshi Shiomi , Hiroshi Iwata , Akira Takahashi
IPC分类号： H01L33/64 , H01L33/58 , H01L33/08 , H01L33/42
CPC分类号： H01L33/64 , G02F1/133603 , H01L25/0753 , H01L31/035227 , H01L31/03529 , H01L31/052 , H01L31/054 , H01L31/0547 , H01L33/0079 , H01L33/08 , H01L33/14 , H01L33/18 , H01L33/20 , H01L33/24 , H01L33/26 , H01L33/32 , H01L33/42 , H01L33/58 , H01L2924/0002 , Y02E10/52 , H01L2924/00
摘要： A light-emitting element includes a first conductivity type semiconductor base, a plurality of first conductivity type protrusion-shaped semiconductors formed on the semiconductor base, and a second conductivity type semiconductor layer that covers the protrusion-shaped semiconductors.
摘要翻译：发光元件包括第一导电型半导体基底，形成在半导体基底上的多个第一导电型突起状半导体，以及覆盖突起状半导体的第二导电型半导体层。

55. 发明申请

US20130027623A1 LIGHT-EMITTING DEVICE MANUFACTURING METHOD, LIGHT-EMITTING DEVICE, LIGHTING DEVICE, BACKLIGHT, LIQUID-CRYSTAL PANEL, DISPLAY DEVICE, DISPLAY DEVICE MANUFACTURING METHOD, DISPLAY DEVICE DRIVE METHOD AND LIQUID-CRYSTAL DISPLAY DEVICE 有权
标题翻译：发光装置制造方法，发光装置，照明装置，背光，液晶面板，显示装置，显示装置制造方法，显示装置驱动方法和液晶显示装置
公开(公告)号：US20130027623A1
公开(公告)日：2013-01-31
申请号：US13634030
申请日：2011-02-22
申请人： Tetsu Negishi , Akihide Shibata , Kenji Komiya , Fumiyoshi Yoshioka , Hiroshi Iwata , Akira Takahashi
发明人： Tetsu Negishi , Akihide Shibata , Kenji Komiya , Fumiyoshi Yoshioka , Hiroshi Iwata , Akira Takahashi
IPC分类号： H01L33/08 , G02F1/136 , G02F1/13357 , H01L33/50 , H05B37/00
CPC分类号： G02F1/133603 , F21K9/00 , G02F1/133605 , G02F2001/133612 , G02F2001/133614 , G02F2001/133628 , H01L24/95 , H01L25/0753 , H01L33/06 , H01L33/18 , H01L33/20 , H01L33/38 , H01L33/62 , H01L2224/48091 , H01L2224/48227 , H01L2224/49107 , H01L2224/73265 , H01L2924/00013 , H01L2924/09701 , H01L2924/12036 , H01L2924/12041 , H01L2924/15787 , H01L2924/15788 , H01L2924/3025 , H01L2933/0041 , H01L2924/00 , H01L2924/00015 , H01L2924/00014 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599
摘要： A metal line 731 is formed in a linear area S of an insulative substrate 720, and moreover a metal line 732 is formed generally parallel to the metal line 731 with a specified distance thereto. The metal line 731 is connected to an n-type semiconductor core 701 of bar-like structure light-emitting elements 710A to 710D, and the metal line 732 is connected to a p-type semiconductor layer 702. By dividing the insulative substrate 720 into a plurality of divisional substrates, a plurality of light-emitting devices in each of which a plurality of bar-like structure light-emitting elements 710 are placed on the divisional substrates are formed.
摘要翻译：金属线731形成在绝缘基板720的线性区域S中，此外，金属线732与金属线731大致平行地形成有规定的距离。金属线731连接到棒状结构发光元件710A至710D的n型半导体芯701，并且金属线732连接到p型半导体层702.通过将绝缘衬底720分成形成多个分割基板，在分割基板上形成多个棒状结构发光元件710的多个发光元件。

56. 发明授权

US07312499B2 Semiconductor storage device and manufacturing method therefor, semiconductor device, portable electronic equipment and IC card 有权
标题翻译：半导体存储器件及其制造方法，半导体器件，便携式电子设备和IC卡
公开(公告)号：US07312499B2
公开(公告)日：2007-12-25
申请号：US11414226
申请日：2006-05-01
申请人： Hiroshi Iwata , Takayuki Ogura , Akihide Shibata , Kouichirou Adachi
发明人： Hiroshi Iwata , Takayuki Ogura , Akihide Shibata , Kouichirou Adachi
IPC分类号： H01L29/792
CPC分类号： H01L27/11568 , G11C16/0491 , H01L21/28282 , H01L21/28291 , H01L21/76831 , H01L21/76897 , H01L27/115 , H01L29/42332 , H01L29/6656 , H01L29/66833 , H01L29/7887 , H01L29/7923 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor storage device includes a field effect transistor which has a gate insulator, a gate electrode and a pair of source/drain diffusion regions on a semiconductor substrate. The device also includes a coating film made of a dielectric having a function of storing electric charge and formed on the substrate in such a manner as to cover an upper surface and side surfaces of the gate electrode. The device further includes an interlayer insulator formed on and in contact with the coating film. The device still further includes contact members which extend vertically through the interlayer insulator and the coating film on the source/drain diffusion regions and which are electrically connected to the source/drain diffusion regions, respectively. The coating film and the interlayer insulator are made of materials which are selectively etchable to each other. Thus, the issues of overerase and read failures due to the overerase can be solved, and the device reliability can be enhanced.
摘要翻译：半导体存储装置包括在半导体衬底上具有栅极绝缘体，栅极电极和一对源极/漏极扩散区域的场效应晶体管。该装置还包括由电介质构成的涂膜，其具有存储电荷的功能，并以覆盖栅电极的上表面和侧表面的方式形成在基板上。该装置还包括形成在涂膜上并与涂膜接触的层间绝缘体。该装置还包括分别垂直延伸通过层间绝缘体和源极/漏极扩散区上的涂膜并且分别与源/漏扩散区电连接的接触构件。涂膜和层间绝缘体由可相互选择性地蚀刻的材料制成。因此，可以解决由于过度过热导致的过度读取和读取故障的问题，并且可以提高器件的可靠性。

57. 发明授权

US07271799B2 Display driver, display device, and portable electronic apparatus 有权
标题翻译：显示驱动器，显示设备和便携式电子设备
公开(公告)号：US07271799B2
公开(公告)日：2007-09-18
申请号：US10844567
申请日：2004-05-13
申请人： Hiroshi Iwata , Akihide Shibata
发明人： Hiroshi Iwata , Akihide Shibata
IPC分类号： G09G5/00
CPC分类号： H01L29/66833 , G09G3/20 , H01L21/28282 , H01L29/792
摘要： A display driver includes a display driving part for receiving image data and outputting a drive signal to a display panel; a nonvolatile memory part for storing control information for controlling output of the display driving part; and a control part for controlling output of the display driving part on the basis of the control information, wherein the nonvolatile memory part has a nonvolatile memory cell, and the nonvolatile memory cell includes a gate electrode formed on a semiconductor layer via a gate insulating film, a channel region disposed under the gate electrode, diffusion regions disposed on both sides of the channel region and having a conductive type opposite to that of the channel region, and memory functional units formed on both sides of the gate electrode and having a function for retaining charges.
摘要翻译：显示驱动器包括用于接收图像数据并向显示面板输出驱动信号的显示驱动部分; 非易失性存储器部分，用于存储用于控制显示驱动部分的输出的控制信息; 以及控制部分，用于根据控制信息控制显示驱动部分的输出，其中非易失性存储器部分具有非易失性存储单元，并且非易失性存储单元包括通过栅极绝缘膜形成在半导体层上的栅电极设置在所述栅电极下方的沟道区域，设置在所述沟道区域的两侧且具有与沟道区域相反的导电类型的扩散区域，以及形成在所述栅极电极两侧的存储功能单元，保留费用。

58. 发明授权

US07164167B2 Semiconductor storage device, its manufacturing method and operating method, and portable electronic apparatus 有权
标题翻译：半导体存储装置及其制造方法和操作方法以及便携式电子装置
公开(公告)号：US07164167B2
公开(公告)日：2007-01-16
申请号：US10480893
申请日：2002-11-18
申请人： Hiroshi Iwata , Akihide Shibata
发明人： Hiroshi Iwata , Akihide Shibata
IPC分类号： H01L29/788 , H01L29/76
CPC分类号： H01L29/66833 , B82Y10/00 , G11C16/0466 , H01L21/84 , H01L27/105 , H01L27/115 , H01L27/11568 , H01L27/118 , H01L27/1203 , H01L29/792 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a semiconductor storage device having: a first conductivity type region formed in a semiconductor layer; a second conductivity type region formed in the semiconductor layer in contact with the first conductivity type region; a memory functional element disposed on the semiconductor layer across the boundary of the first and second conductivity type regions; and an electrode provided in contact with the memory functional element and on the first conductivity type region via an insulation film, and a portable electronic apparatus comprising the semiconductor storage device. The present invention can fully cope with scale-down and high-integration by constituting a selectable memory cell substantially of one device.
摘要翻译：本发明提供一种半导体存储装置，具有：形成在半导体层中的第一导电型区域; 形成在与第一导电类型区域接触的半导体层中的第二导电类型区域; 存储功能元件，设置在跨越第一和第二导电类型区域的边界的半导体层上; 以及通过绝缘膜与所述存储功能元件和所述第一导电类型区域接触地设置的电极，以及包括所述半导体存储装置的便携式电子设备。本发明可以通过构成基本上由一个设备构成的可选存储单元来完全应对缩小和高集成度。

59. 发明授权

US07141849B2 Semiconductor storage device having a function to convert changes of an electric charge amount to a current amount 有权
标题翻译：具有将电荷量变化为电流量的功能的半导体存储装置
公开(公告)号：US07141849B2
公开(公告)日：2006-11-28
申请号：US10530519
申请日：2003-10-01
申请人： Hiroshi Iwata , Akihide Shibata
发明人： Hiroshi Iwata , Akihide Shibata
IPC分类号： H01L29/792
CPC分类号： H01L29/66825 , H01L21/28273 , H01L21/28282 , H01L29/66833 , H01L29/7887 , H01L29/7923
摘要： In a semiconductor storage device, a gate insulating film and a gate electrode are laid on a first conductivity type semiconductor substrate, and charge holding portions are formed on both sides of the gate electrode. Second conductivity type first and second diffusion layer regions are formed in regions of the semiconductor substrate corresponding to the charge holding portions. The charge holding portions are each structured so as to change, in accordance with an electric charge amount held in the charge holding portions, a current amount flowing from one of the second conductivity type diffusion layer regions to the other of the diffusion layer regions through a channel region when voltage is applied to the gate electrode. Part of each charge holding portion is present below an interface of the gate insulating film and the channel region.
摘要翻译：在半导体存储装置中，在第一导电型半导体基板上铺设栅极绝缘膜和栅电极，在栅电极的两侧形成电荷保持部。第二导电类型的第一和第二扩散层区域形成在对应于电荷保持部分的半导体衬底的区域中。电荷保持部分被构造成根据保持在电荷保持部分中的电荷量，通过一个第二导电类型扩散层区域中的一个流过另一个扩散层区域的电流量沟道区域，当电压施加到栅电极时。每个电荷保持部分的一部分存在于栅绝缘膜和沟道区的界面之下。

60. 发明授权

US07095077B2 Semiconductor memory having two charge storage sections 有权
标题翻译：具有两个电荷存储部分的半导体存储器
公开(公告)号：US07095077B2
公开(公告)日：2006-08-22
申请号：US10824394
申请日：2004-04-15
申请人： Kotaro Kataoka , Hiroshi Iwata , Akihide Shibata
发明人： Kotaro Kataoka , Hiroshi Iwata , Akihide Shibata
IPC分类号： H01L29/792
CPC分类号： H01L29/66833 , H01L21/28282 , H01L29/7923
摘要： A semiconductor memory includes: a p-type semiconductor (p-type semiconductor film on a substrate, a p-type well region in a semiconductor substrate, or an insulator); a gate insulating film formed on the p-type semiconductor; a gate electrode formed on the gate insulating film; two charge storage sections formed on side walls of the gate electrode; a channel region provided below the gate electrode; and a first n-type diffusion layer region and a second n-type diffusion layer region provided to sides of the channel region, wherein: the charge storage sections are arranged to change an electric current flow between the first n-type diffusion layer region and the second n-type diffusion layer region under application of a voltage to the gate electrode according to the quantity of electric charges stored in the charge storage sections; and the first n-type diffusion layer region is set to a reference voltage, the other n-type diffusion layer region is set to a voltage greater than the reference voltage, and the gate electrode is set to a voltage greater than the reference voltage. Thus, the semiconductor memory obtained is capable of 2 bit operation and easy to miniaturize.
摘要翻译：半导体存储器包括：p型半导体（衬底上的p型半导体膜，半导体衬底中的p型阱区或绝缘体）; 形成在p型半导体上的栅极绝缘膜; 形成在栅极绝缘膜上的栅电极; 形成在栅电极的侧壁上的两个电荷存储部分; 设置在栅电极下方的沟道区; 以及设置在沟道区域的侧面的第一n型扩散层区域和第二n型扩散层区域，其中：电荷存储部分被布置成改变第一n型扩散层区域和根据存储在电荷存储部中的电荷量，向栅电极施加电压的第二n型扩散层区域; 并且将第一n型扩散层区域设定为基准电压，将另一n型扩散层区域设定为大于基准电压的电压，将栅极电极设定为大于基准电压的电压。因此，所获得的半导体存储器能够进行2位操作并且容易小型化。

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