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1. 发明申请

US20130027623A1 LIGHT-EMITTING DEVICE MANUFACTURING METHOD, LIGHT-EMITTING DEVICE, LIGHTING DEVICE, BACKLIGHT, LIQUID-CRYSTAL PANEL, DISPLAY DEVICE, DISPLAY DEVICE MANUFACTURING METHOD, DISPLAY DEVICE DRIVE METHOD AND LIQUID-CRYSTAL DISPLAY DEVICE 有权
标题翻译：发光装置制造方法，发光装置，照明装置，背光，液晶面板，显示装置，显示装置制造方法，显示装置驱动方法和液晶显示装置
公开(公告)号：US20130027623A1
公开(公告)日：2013-01-31
申请号：US13634030
申请日：2011-02-22
申请人： Tetsu Negishi , Akihide Shibata , Kenji Komiya , Fumiyoshi Yoshioka , Hiroshi Iwata , Akira Takahashi
发明人： Tetsu Negishi , Akihide Shibata , Kenji Komiya , Fumiyoshi Yoshioka , Hiroshi Iwata , Akira Takahashi
IPC分类号： H01L33/08 , G02F1/136 , G02F1/13357 , H01L33/50 , H05B37/00
CPC分类号： G02F1/133603 , F21K9/00 , G02F1/133605 , G02F2001/133612 , G02F2001/133614 , G02F2001/133628 , H01L24/95 , H01L25/0753 , H01L33/06 , H01L33/18 , H01L33/20 , H01L33/38 , H01L33/62 , H01L2224/48091 , H01L2224/48227 , H01L2224/49107 , H01L2224/73265 , H01L2924/00013 , H01L2924/09701 , H01L2924/12036 , H01L2924/12041 , H01L2924/15787 , H01L2924/15788 , H01L2924/3025 , H01L2933/0041 , H01L2924/00 , H01L2924/00015 , H01L2924/00014 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599
摘要： A metal line 731 is formed in a linear area S of an insulative substrate 720, and moreover a metal line 732 is formed generally parallel to the metal line 731 with a specified distance thereto. The metal line 731 is connected to an n-type semiconductor core 701 of bar-like structure light-emitting elements 710A to 710D, and the metal line 732 is connected to a p-type semiconductor layer 702. By dividing the insulative substrate 720 into a plurality of divisional substrates, a plurality of light-emitting devices in each of which a plurality of bar-like structure light-emitting elements 710 are placed on the divisional substrates are formed.
摘要翻译：金属线731形成在绝缘基板720的线性区域S中，此外，金属线732与金属线731大致平行地形成有规定的距离。金属线731连接到棒状结构发光元件710A至710D的n型半导体芯701，并且金属线732连接到p型半导体层702.通过将绝缘衬底720分成形成多个分割基板，在分割基板上形成多个棒状结构发光元件710的多个发光元件。

2. 发明授权

US09329433B2 Light-emitting device manufacturing method, light-emitting device, lighting device, backlight, liquid-crystal panel, display device, display device manufacturing method, display device drive method and liquid-crystal display device 有权
标题翻译：发光装置的制造方法，发光装置，照明装置，背光源，液晶面板，显示装置，显示装置的制造方法，显示装置驱动方法和液晶显示装置
公开(公告)号：US09329433B2
公开(公告)日：2016-05-03
申请号：US13634030
申请日：2011-02-22
申请人： Tetsu Negishi , Akihide Shibata , Kenji Komiya , Fumiyoshi Yoshioka , Hiroshi Iwata , Akira Takahashi
发明人： Tetsu Negishi , Akihide Shibata , Kenji Komiya , Fumiyoshi Yoshioka , Hiroshi Iwata , Akira Takahashi
IPC分类号： H01J9/24 , G02F1/1335 , H01L25/075 , H01L23/00 , H01L33/06 , H01L33/18 , H01L33/20 , H01L33/38 , H01L33/62
CPC分类号： G02F1/133603 , F21K9/00 , G02F1/133605 , G02F2001/133612 , G02F2001/133614 , G02F2001/133628 , H01L24/95 , H01L25/0753 , H01L33/06 , H01L33/18 , H01L33/20 , H01L33/38 , H01L33/62 , H01L2224/48091 , H01L2224/48227 , H01L2224/49107 , H01L2224/73265 , H01L2924/00013 , H01L2924/09701 , H01L2924/12036 , H01L2924/12041 , H01L2924/15787 , H01L2924/15788 , H01L2924/3025 , H01L2933/0041 , H01L2924/00 , H01L2924/00015 , H01L2924/00014 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599
摘要： A metal line 731 is formed in a linear area S of an insulative substrate 720, and moreover a metal line 732 is formed generally parallel to the metal line 731 with a specified distance thereto. The metal line 731 is connected to an n-type semiconductor core 701 of bar-like structure light-emitting elements 710A to 710D, and the metal line 732 is connected to a p-type semiconductor layer 702. By dividing the insulative substrate 720 into a plurality of divisional substrates, a plurality of light-emitting devices in each of which a plurality of bar-like structure light-emitting elements 710 are placed on the divisional substrates are formed.
摘要翻译：金属线731形成在绝缘基板720的线性区域S中，此外，金属线732与金属线731大致平行地形成有规定的距离。金属线731连接到棒状结构发光元件710A至710D的n型半导体芯701，并且金属线732连接到p型半导体层702.通过将绝缘衬底720分成形成多个分割基板，在分割基板上形成多个棒状结构发光元件710的多个发光元件。

3. 发明授权

US07262458B2 Semiconductor memory device and portable electronic apparatus 有权
标题翻译：半导体存储器件和便携式电子设备
公开(公告)号：US07262458B2
公开(公告)日：2007-08-28
申请号：US10844471
申请日：2004-05-13
申请人： Fumiyoshi Yoshioka , Akihide Shibata , Hiroshi Iwata
发明人： Fumiyoshi Yoshioka , Akihide Shibata , Hiroshi Iwata
IPC分类号： H01L29/788
CPC分类号： H01L29/66833 , H01L21/28282 , H01L29/6684
摘要： A semiconductor memory device includes: a gate electrode formed on a semiconductor layer via a gate insulating film; a channel region disposed under the gate electrode; diffusion regions disposed on both sides of the channel region and having a conductive type opposite to that of the channel region; and memory functional units formed on both sides of the gate electrode and having the function of retaining charges, wherein each of the diffusion regions has: a high-concentration impurity region disposed so as to be offset from the gate electrode; and a low-concentration impurity region disposed in contact with the high-concentration impurity region so as to overlap with the gate electrode, and an amount of current flowing from one of the diffusion regions to the other diffusion region is changed when a voltage is applied to the gate electrode in accordance with an amount of charges retained in the memory functional units.
摘要翻译：半导体存储器件包括：栅电极，经栅极绝缘膜形成在半导体层上; 设置在所述栅电极下方的沟道区域; 扩散区域设置在沟道区域的两侧并且具有与沟道区域的导电类型相反的导电类型; 以及存储功能单元，其形成在所述栅极电极的两侧并且具有保持电荷的功能，其中每个扩散区具有：设置成偏离所述栅电极的高浓度杂质区; 以及与高浓度杂质区域接触以与栅电极重叠的低浓度杂质区域，并且当施加电压时改变从一个扩散区域流向另一个扩散区域的电流量根据保存在存储功能单元中的电荷量向栅极施加电压。

4. 发明授权

US06677212B1 Elevated source/drain field effect transistor and method for making the same 有权
标题翻译：提高源/漏场效应晶体管及其制作方法
公开(公告)号：US06677212B1
公开(公告)日：2004-01-13
申请号：US10070478
申请日：2002-05-02
申请人： Fumiyoshi Yoshioka , Masayuki Nakano , Hiroshi Iwata
发明人： Fumiyoshi Yoshioka , Masayuki Nakano , Hiroshi Iwata
IPC分类号： H01L27108
CPC分类号： H01L29/66598 , H01L21/26586 , H01L21/28525 , H01L29/1083 , H01L29/41766 , H01L29/41775 , H01L29/41783 , H01L29/6659
摘要： A gate oxide film (23), a gate electrode (24) and a gate cap insulating film (25) are stacked on an active region of a p-type semiconductor substrate (21), and an insulating side wall (29) is formed, followed by BF2 ion implantation. Thus, a surface of the p-type semiconductor substrate becomes amorphous so that single-crystal silicon is prevented from epitaxially growing in the next process of depositing polysilicon (33). Halo regions (32) are formed using the BF2 ions having the opposite conductivity to a source/drain to reduce the short-channel effect. The substrate is then passed through a nitrogen purge chamber having a dew point kept at −100° C. to remove water molecules completely, and polysilicon (33) is deposited. Because native oxide is prevented from growing at an interface between the active region and the polysilicon, source/drain regions (34) formed later by implantation and diffusion of n-type impurity ions achieve a uniform junction depth.
摘要翻译：在p型半导体基板（21）的有源区上层叠有栅极氧化膜（23），栅极电极（24）和栅极绝缘膜（25），形成绝缘侧壁（29），然后进行BF2离子注入。因此，p型半导体衬底的表面变为非晶态，从而在下一个沉积多晶硅的工艺中防止单晶硅外延生长（33）。使用与源极/漏极具有相反导电性的BF 2离子形成光晕区域（32），以减少短沟道效应。然后将基底通过具有保持在-100℃的露点的氮气净化室，以完全去除水分子，并沉积多晶硅（33）。因为防止在有源区和多晶硅之间的界面处生长了自然氧化物，所以随后通过n型杂质离子的注入和扩散而形成的源/漏区（34）达到均匀的结深度。

5. 发明申请

US20110157113A1 DISPLAY PANEL AND DISPLAY DEVICE USING THE SAME 审中-公开
标题翻译：显示面板和使用该显示面板的显示设备
公开(公告)号：US20110157113A1
公开(公告)日：2011-06-30
申请号：US13062077
申请日：2009-06-04
申请人： Tadayoshi Miyamoto , Katsuyuki Suga , Fumiyoshi Yoshioka , Satomi Hasegawa
发明人： Tadayoshi Miyamoto , Katsuyuki Suga , Fumiyoshi Yoshioka , Satomi Hasegawa
IPC分类号： G09G5/00
CPC分类号： H01L27/12 , H01L21/02422 , H01L21/02532 , H01L21/02683 , H01L21/02691 , H01L21/268 , H01L27/1229 , H01L27/1285
摘要： A display panel (100) is provided which allows optimization of the respective characteristics of different semiconductor elements without incurring an increase in manufacturing cost. The display panel (100) includes: pixel TFTs (11) disposed in a display section (101); scanning driver TFTs (12) disposed in a scanning driver (102); and data driver (13) disposed in a data driver (103). A polysilicon film of the pixel TFTs (11), the scanning driver TFTs (12), and the data driver TFTs (13) is polycrystallized by irradiation of laser light so as to have a crystal growth direction that goes along a scanning direction of the laser light. The pixel TFTs (11) are disposed so that the crystal growth direction of the polysilicon film is substantially perpendicular to the directions of current paths of the pixel TFTs (11). The scanning driver TFTs (12) and the data driver TFTs (13) are so that the crystal growth direction of the polysilicon film is substantially parallel to the directions of current paths of the scanning driver TFTs (12) and the data driver TFTs (13).
摘要翻译：提供了显示面板（100），其允许优化不同半导体元件的相应特性，而不会导致制造成本的增加。显示面板（100）包括：设置在显示部（101）中的像素TFT（11）; 设置在扫描驱动器（102）中的扫描驱动TFT（12）; 和数据驱动器（13），其设置在数据驱动器（103）中。像素TFT（11），扫描驱动器TFT（12）和数据驱动器TFT（13）的多晶硅膜通过激光的照射被多晶化，以具有沿着扫描方向的晶体生长方向激光灯。像素TFT（11）被布置成使得多晶硅膜的晶体生长方向基本上垂直于像素TFT（11）的电流路径的方向。扫描驱动器TFT（12）和数据驱动器TFT（13）使得多晶硅膜的晶体生长方向基本上平行于扫描驱动TFT（12）和数据驱动器TFT（13）的电流路径的方向）。

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