专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明授权

US08994903B2 Liquid crystal display 有权
标题翻译：液晶显示器
公开(公告)号：US08994903B2
公开(公告)日：2015-03-31
申请号：US13483909
申请日：2012-05-30
申请人： Seung-Suk Yang , Ho-Jun Lee , Sang Ho Kim , Sang Yeoul Lim , Young-Min Jung , Ho Kyung Kim , Sung Hoon Kim
发明人： Seung-Suk Yang , Ho-Jun Lee , Sang Ho Kim , Sang Yeoul Lim , Young-Min Jung , Ho Kyung Kim , Sung Hoon Kim
IPC分类号： G02F1/1337 , G02F1/1333 , G02F1/1335
CPC分类号： G02F1/133371 , G02F1/133514 , G02F1/133707
摘要： A liquid crystal display includes a display panel having a plurality of pixels. The display panel includes a first substrate and a second substrate opposing each other. A liquid crystal layer is positioned between the first substrate and the second substrate. A pixel electrode is positioned on the first substrate and positioned in one pixel of the plurality of pixels. An opposing electrode faces the pixel electrode with the liquid crystal layer interposed therebetween. At least one of the pixel electrode and the opposing electrode includes a liquid crystal inclination direction determining member. A transmission region of the pixel includes a first region and a second region that have different cell gaps of the liquid crystal layer from each other and extension directions of the liquid crystal inclination direction determining member in the first region and the second region are different from each other.
摘要翻译：液晶显示器包括具有多个像素的显示面板。显示面板包括彼此相对的第一基板和第二基板。液晶层位于第一基板和第二基板之间。像素电极位于第一基板上并且位于多个像素的一个像素中。相对电极面对像素电极，其间插入液晶层。像素电极和对置电极中的至少一个包括液晶倾斜方向确定部件。像素的透射区域包括第一区域和第二区域，第一区域和第二区域具有液晶层彼此不同的单元间隙，并且第一区域和第二区域中的液晶倾斜方向确定构件的延伸方向各自不同其他。

52. 发明授权

US08575239B2 Curing composition and cured product prepared by using the same 有权
标题翻译：固化组合物和使用其制备的固化产物
公开(公告)号：US08575239B2
公开(公告)日：2013-11-05
申请号：US12810678
申请日：2008-12-24
申请人： Sang-Uk Ryu , Dong-Ryul Kim , Gi-Cheul Kim , Ho-Jun Lee , Jang-Yeon Hwang , Seung-Lac Ma
发明人： Sang-Uk Ryu , Dong-Ryul Kim , Gi-Cheul Kim , Ho-Jun Lee , Jang-Yeon Hwang , Seung-Lac Ma
IPC分类号： C08L67/00 , C08L63/00
CPC分类号： C08J5/24 , C08G59/245 , C08G59/4014 , C08J5/042 , C08J5/043 , C08J2363/00 , C08K5/29 , C08L63/00
摘要： The present invention relates to a curing composition comprising a polyarylate having epoxy group and a cyanate ester resin, and a cured product prepared by using the same. The curing composition according to the present invention is used to provide a cured product which is excellent in terms of heat resistance and toughness.
摘要翻译：本发明涉及包含具有环氧基的多芳基化合物和氰酸酯树脂的固化组合物和使用它们的固化产物。本发明的固化性组合物用于提供耐热性和韧性优异的固化物。

53. 发明授权

US08525180B2 Thin film transistor array panel 有权
公开(公告)号：US08525180B2
公开(公告)日：2013-09-03
申请号：US12785969
申请日：2010-05-24
申请人： Yeo-Geon Yoon , Hyoung-Wook Lee , Mi-Ae Lee , Ho-Jun Lee
发明人： Yeo-Geon Yoon , Hyoung-Wook Lee , Mi-Ae Lee , Ho-Jun Lee
IPC分类号： H01L33/00 , H01L27/088 , H01L29/786
CPC分类号： H01L27/124 , H01L27/1214 , H01L29/41733
摘要： A thin film transistor (TFT) array panel includes: first and second pixel electrodes neighboring each other; a data line extending between the first and the second pixel electrodes; first and second gate lines extending perpendicularly to the data line; a first TFT including a first gate electrode connected to the first gate line, a first source electrode connected to the data line, and a first drain electrode facing the first source electrode and connected to the first pixel electrode; and a second TFT including a second gate electrode connected to the second gate line, a second source electrode connected to the data line, and a second drain electrode facing the second source electrode and connected to the second pixel electrode. The first source electrode has the same relative position with respect to the first drain electrode as the second source electrode with respect to the second drain electrode.

54. 发明授权

US08476633B2 Thin film transistor array substrate for a display panel and a method for manufacturing a thin film transistor array substrate for a display panel 有权
标题翻译：用于显示面板的薄膜晶体管阵列基板和用于制造用于显示面板的薄膜晶体管阵列基板的方法
公开(公告)号：US08476633B2
公开(公告)日：2013-07-02
申请号：US12560652
申请日：2009-09-16
申请人： Hyeong-Suk Yoo , Ho-Jun Lee , Sung-ryul Kim , O-Sung Seo , Hong-Kee Chin
发明人： Hyeong-Suk Yoo , Ho-Jun Lee , Sung-ryul Kim , O-Sung Seo , Hong-Kee Chin
IPC分类号： H01L29/786
CPC分类号： H01L27/1288 , H01L27/1214 , H01L27/124 , H01L27/1248
摘要： A method of manufacturing a thin film transistor capable of simplifying a substrate structure and a manufacturing process is disclosed. The method of manufacturing a thin film transistor array substrate comprising a three mask process. The 3 mask process comprising, forming a gate pattern on a substrate, forming a gate insulating film on the substrate, forming a source/drain pattern and a semiconductor pattern on the substrate, forming a first, second, and third passivation film successively on the substrate. Over the above multi-layers of the passivation film forming a first photoresist pattern comprising a first portion formed on part of the drain electrode and on the pixel region, and a second portion wherein, the second portion thicker than the first portion, and then patterning the third passivation film using the first photoresist pattern, forming a second photoresist pattern by removing the first portion of the first photoresist pattern, forming a transparent electrode film on the substrate, removing the second photoresist pattern and the transparent electrode film disposed on the second photoresist pattern; and forming a transparent electrode pattern on the second passivation layer.
摘要翻译：公开了一种能够简化衬底结构和制造工艺的制造薄膜晶体管的方法。制造包括三掩模工艺的薄膜晶体管阵列基板的方法。 3掩模工艺包括：在衬底上形成栅极图案，在衬底上形成栅极绝缘膜，在衬底上形成源极/漏极图案和半导体图案，在第一，第二和第三钝化膜上依次形成第一，第二和第三钝化膜基质。在上述多层钝化膜上形成第一光致抗蚀剂图案，该第一光致抗蚀剂图案包括形成在漏电极的一部分上和在像素区域上的第一部分，以及第二部分，其中第二部分比第一部分厚，使用第一光致抗蚀剂图案的第三钝化膜，通过去除第一光致抗蚀剂图案的第一部分形成第二光致抗蚀剂图案，在基板上形成透明电极膜，去除第二光致抗蚀剂图案和设置在第二光致抗蚀剂上的透明电极膜模式; 以及在所述第二钝化层上形成透明电极图案。

55. 发明授权

US08350760B2 Antenna using buildup structure and method of manufacturing the same 有权
标题翻译：天线采用积木结构及其制造方法
公开(公告)号：US08350760B2
公开(公告)日：2013-01-08
申请号：US12655058
申请日：2009-12-21
申请人： Ho-Jun Lee
发明人： Ho-Jun Lee
IPC分类号： H01Q1/38
CPC分类号： H01Q1/40 , H01Q1/2225 , H01Q1/38 , H01Q23/00 , Y10T29/49016 , Y10T29/49018
摘要： There are provided an antenna using a buildup structure and a method of manufacturing the same. In the antenna, a tag chip is positioned within a dielectric and is connected to a radiator through a connection line or a via-hole, thereby being strong against external environments, decreasing a defective rate and enabling to be used for the special purpose of being positioned within a metal or liquid.
摘要翻译：提供了使用积层结构的天线及其制造方法。在天线中，标签芯片位于电介质内，并通过连接线或通孔连接到散热器，从而对外界环境强，降低故障率，并可用于特殊目的位于金属或液体内。

56. 发明申请

US20120009976A1 RECESS GATE TRANSISTOR 审中-公开
标题翻译：记忆闸门晶体管
公开(公告)号：US20120009976A1
公开(公告)日：2012-01-12
申请号：US13242724
申请日：2011-09-23
申请人： Ho-In Ryu , Bong-Su Kim , Dae-Ik Kim , Ho-Jun Lee , Dae-Young Jang , Si-Hyung Lee
发明人： Ho-In Ryu , Bong-Su Kim , Dae-Ik Kim , Ho-Jun Lee , Dae-Young Jang , Si-Hyung Lee
IPC分类号： H04M1/00 , G11C11/34 , H01L27/088
CPC分类号： H01L29/4236 , H01L29/66621
摘要： A method of forming a semiconductor device is provided, comprising forming a plurality of hard masks on a substrate by patterning an insulating layer; forming a plurality of trenches in the substrate, each trench having trench walls disposed between two adjacent masks and extending vertically from a bottom portion to an upper portion; forming an insulating layer on the hard masks and the trench walls; forming a conductive layer on the insulating layer; etching the conductive layer to form conductive layer patterns to fill the bottom portions of the trenches; depositing a buffer layer on the conductive layer patterns and the trench walls; and filling the upper portions of the trenches with a capping layer.
摘要翻译：提供一种形成半导体器件的方法，包括：通过图案化绝缘层在衬底上形成多个硬掩模; 在衬底中形成多个沟槽，每个沟槽具有设置在两个相邻掩模之间并且从底部到上部垂直延伸的沟槽壁; 在硬掩模和沟槽壁上形成绝缘层; 在绝缘层上形成导电层; 蚀刻导电层以形成导电层图案以填充沟槽的底部; 在导电层图案和沟槽壁上沉积缓冲层; 以及用覆盖层填充沟槽的上部。

57. 发明申请

US20120007082A1 THIN FILM TRANSISTOR ARRAY PANEL 有权
标题翻译：薄膜晶体管阵列
公开(公告)号：US20120007082A1
公开(公告)日：2012-01-12
申请号：US13072962
申请日：2011-03-28
申请人： Yeo-Geon YOON , Hyoung-Wook LEE , Mi-Ae LEE , Ho-Jun Lee
发明人： Yeo-Geon YOON , Hyoung-Wook LEE , Mi-Ae LEE , Ho-Jun Lee
IPC分类号： H01L29/04
CPC分类号： H01L27/124 , H01L27/1214 , H01L27/1248
摘要： A thin film transistor array panel includes an insulating substrate, a plurality of pixel electrodes arranged on the insulating substrate in rows and columns, a plurality of thin film transistors connected with the plurality of pixel electrodes, respectively, and a plurality of gate lines and a plurality of data lines connected with the plurality of thin film transistors. When one data line and one pixel electrode which are connected with a single thin film transistor are referred to as a connected data line and a connected pixel electrode, respectively, the plurality of thin film transistors are positioned on a same side of the connected data line in two adjacent rows, and on alternating sides of the connected data line in every other two adjacent rows. Two boundary lines of the connected pixel electrode are overlapped with the connected data line.
摘要翻译：薄膜晶体管阵列面板包括绝缘基板，以行和列布置在绝缘基板上的多个像素电极，分别与多个像素电极连接的多个薄膜晶体管，以及多个栅极线和多个数据线与多个薄膜晶体管连接。将与单个薄膜晶体管连接的一个数据线和一个像素电极分别称为连接的数据线和连接的像素电极时，多个薄膜晶体管位于连接的数据线的同一侧在两个相邻的行中，并且在每隔一个两个相邻行中连接的数据线的交替侧。连接的像素电极的两条边界线与连接的数据线重叠。

58. 发明申请

US20110052890A1 COMPOSITE MATERIALS, COMPOSITE FILM MANUFACTURED BY USING THE SAME AND METHOD FOR MANUFACTURING COMPOSITE FILM 有权
标题翻译：复合材料，使用其制造的复合膜和制造复合膜的方法
公开(公告)号：US20110052890A1
公开(公告)日：2011-03-03
申请号：US12738554
申请日：2008-10-17
申请人： Gi-Cheul Kim , Dong-Ryul Kim , Hee-Jung Kim , Jang-Yeon Hwang , Seung-Lac Ma , Boong-Goon Jeong , Sang-Uk Ryu , Ho-Jun Lee , Ju-Eun Cha , Myeon-Geun Ko
发明人： Gi-Cheul Kim , Dong-Ryul Kim , Hee-Jung Kim , Jang-Yeon Hwang , Seung-Lac Ma , Boong-Goon Jeong , Sang-Uk Ryu , Ho-Jun Lee , Ju-Eun Cha , Myeon-Geun Ko
IPC分类号： B32B7/02 , B32B5/02 , B05D3/02
CPC分类号： C03C17/001 , C08J5/08 , Y10T428/24942 , Y10T428/31511 , Y10T442/2549
摘要： The present invention provides a composite material comprising a glass cloth; and an organic- inorganic hybrid composition comprising diphenylsilanediol and alkoxy si lane, a composite film manufactured by using the same, and a method for manufacturing the composite film.
摘要翻译：本发明提供一种复合材料，其包括玻璃布; 以及包含二苯基硅烷二醇和烷氧基si泳道的有机 - 无机杂化组合物，使用该复合膜的复合膜以及该复合膜的制造方法。

59. 发明申请

US20090261420A1 RECESS GATE TRANSISTOR 有权
标题翻译：记忆闸门晶体管
公开(公告)号：US20090261420A1
公开(公告)日：2009-10-22
申请号：US12332877
申请日：2008-12-11
申请人： Ho-In Ryu , Bong-Su Kim , Dae-Ik Kim , Ho-Jun Lee , Dae-Young Jang , Si-Hyung Lee
发明人： Ho-In Ryu , Bong-Su Kim , Dae-Ik Kim , Ho-Jun Lee , Dae-Young Jang , Si-Hyung Lee
IPC分类号： H01L25/00 , H01L21/4763 , H01L29/78
CPC分类号： H01L29/4236 , H01L29/66621
摘要： A method of forming a semiconductor device is provided, comprising forming a plurality of hard masks on a substrate by patterning an insulating layer; forming a plurality of trenches in the substrate, each trench having trench walls disposed between two adjacent masks and extending vertically from a bottom portion to an upper portion; forming an insulating layer on the hard masks and the trench walls; forming a conductive layer on the insulating layer; etching the conductive layer to form conductive layer patterns to fill the bottom portions of the trenches; depositing a buffer layer on the conductive layer patterns and the trench walls; and filling the upper portions of the trenches with a capping layer.
摘要翻译：提供一种形成半导体器件的方法，包括：通过图案化绝缘层在衬底上形成多个硬掩模; 在衬底中形成多个沟槽，每个沟槽具有设置在两个相邻掩模之间并且从底部到上部垂直延伸的沟槽壁; 在硬掩模和沟槽壁上形成绝缘层; 在绝缘层上形成导电层; 蚀刻导电层以形成导电层图案以填充沟槽的底部; 在导电层图案和沟槽壁上沉积缓冲层; 以及用覆盖层填充沟槽的上部。

60. 发明申请

US20090002613A1 Retardation Compensators of Negative C-Type For Liquid Crystal Display 有权
标题翻译：液晶显示器负C型延迟补偿器
公开(公告)号：US20090002613A1
公开(公告)日：2009-01-01
申请号：US12087739
申请日：2006-11-15
申请人： Hee-Jung Kim , Dong-Ryul Kim , Ho-Jun Lee , Sang-Uk Ryu , Hyo-Sun Lee , Boong-Goon Jeong , Dae-Woo Nam , Ju-Eun Cha
发明人： Hee-Jung Kim , Dong-Ryul Kim , Ho-Jun Lee , Sang-Uk Ryu , Hyo-Sun Lee , Boong-Goon Jeong , Dae-Woo Nam , Ju-Eun Cha
IPC分类号： G02F1/13363 , B29D11/00
CPC分类号： G02F1/1333 , G02B1/04 , G02B5/3083 , G02F1/133634 , Y10T428/10 , Y10T428/1036 , Y10T428/105 , Y10T428/31786 , C08L81/00
摘要： Disclosed is a negative C-type retardation compensator for a liquid crystal display. The negative C-type retardation compensator for the liquid crystal display includes polyarylate having a thio group or a sulfur oxide group in a polymer main chain thereof. Accordingly, the retardation compensator has an absolute value of negative retardation that is larger in a thickness direction than a retardation compensator which includes polyarylate having no thio group or sulfur oxide group in a polymer main chain thereof even though the retardation compensator having the thio group or sulfur oxide group and the retardation compensator having no thio group or sulfur oxide group are the same as each other in thickness. Thereby, the negative C-type retardation compensator for liquid crystal displays is capable of being desirably applied to the liquid crystal displays.
摘要翻译：公开了用于液晶显示器的负C型延迟补偿器。用于液晶显示器的负C型延迟补偿器包括其聚合物主链中具有硫基或硫氧化物基团的多芳基化合物。因此，延迟补偿器具有在包含聚合物主链中不含硫基或硫氧化物基团的多芳基化物的延迟补偿器的厚度方向上的负相位差绝对值即使具有硫基的相位差补偿器或硫氧化物基团和没有硫基或硫氧化物基团的延迟补偿器的厚度彼此相同。由此，液晶显示器的负C型延迟补偿器能够适用于液晶显示器。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式