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    • 52. 发明授权
    • Heat exchanger for cooling circulating water of fuel cells & process for producing same
    • 用于冷却燃料电池循环水的热交换器及其制造方法
    • US06478078B1
    • 2002-11-12
    • US09669689
    • 2000-09-26
    • Tsutomu MatsuzakiYoshihiro SasakiChizuko Yoshida
    • Tsutomu MatsuzakiYoshihiro SasakiChizuko Yoshida
    • F28F1902
    • H01M8/04074F28D2021/0043F28F19/04Y02P70/56
    • The invention relates to a heat exchanger for cooling a circulating water of a fuel cell. This heat exchanger includes (1) an aluminum member having an inner surface which defines an inner space in the aluminum member such that the circulating water is allowed to flow through the inner space; and (2) a resin coating layer formed on the inner surface of the aluminum member. It becomes possible to prevent contamination of the circulating water by the provision of the resin coating layer. The heat exchanger can be produced by a first process including (a) providing a core portion having tubes made of aluminum and corrugated fins, which are alternately arranged; (b) assembling the core portion and a tank made of aluminum into an assembly; (c) brazing the assembly by heating into a brazed assembly; and (d) coating the inner surface of the brazed assembly with a resin coating layer.
    • 本发明涉及一种用于冷却燃料电池循环水的热交换器。 该热交换器包括(1)铝构件,其具有限定铝构件内部空间的内表面,使得循环水能够流过内部空间; 和(2)在铝构件的内表面上形成的树脂涂层。 通过设置树脂被覆层,能够防止循环水的污染。 热交换器可以通过第一工艺生产,包括(a)提供具有交替布置的由铝和波纹状散热片制成的管的芯部; (b)将芯部和由铝制成的罐组装到组件中; (c)通过加热将组件钎焊到钎焊组件中; 和(d)用树脂涂层涂覆钎焊组件的内表面。
    • 55. 发明授权
    • Semiconductor laser having an improved lateral carrier injection
structure to multiple quantum well layers
    • US5956358A
    • 1999-09-21
    • US606314
    • 1996-02-23
    • Yoshihiro Sasaki
    • Yoshihiro Sasaki
    • H01S5/00H01S5/042H01S5/227H01S5/34H01S3/19
    • B82Y20/00H01S5/0424H01S5/227H01S5/2275H01S5/3415H01S5/3428
    • The present invention also provides another semiconductor multilayer carrier injection structure in a semiconductor laser. The semiconductor multilayer carrier injection structure comprises the following elements. The semiconductor multilayer carrier injection structure includes a multiple quantum well active layer comprising alternating laminations of quantum well layers made of a first compound semiconductor having a first energy band gap and potential barrier layers made of a second compound semiconductor having a second energy band gap larger than the first energy band gap. Each of the quantum well layers has an electron ground state of quantum energy levels of electrons and a hole ground state of quantum energy levels of holes. The semiconductor multilayer carrier injection structure also includes a first carrier injection guide layer being provided in contact with a first lateral end portion of the multiple quantum well active layer. The first carrier injection guide layer is made of a third compound semiconductor of a first conductivity type. The third compound semiconductor has a third energy band gap which is larger than a difference between the electron ground state and the hole ground state of the quantum well layers and which is smaller than the second energy band gap of the potential barrier layers. The semiconductor multilayer carrier injection structure also includes a second carrier injection guide layer being provided in contact with a second lateral end portion of the multiple quantum well active layer. The second carrier injection guide layer is made of a fourth compound semiconductor of a second conductivity type. The fourth compound semiconductor has a fourth energy band gap which is larger than the difference between the electron ground state and the hole ground state of the quantum well layers and substantially equal to or smaller than the second energy band gap of the potential barrier layers.
    • 56. 发明授权
    • Multiple quantum well semiconductor laser
    • 多量子阱半导体激光器
    • US5509026A
    • 1996-04-16
    • US384333
    • 1995-02-01
    • Yoshihiro SasakiTakao Morimoto
    • Yoshihiro SasakiTakao Morimoto
    • H01S5/00H01S5/323H01S5/34H01S5/343H01S3/19
    • B82Y20/00H01S5/3434H01S5/32391H01S5/3415H01S5/3428H01S5/34306
    • Disclosed herein is a long wavelength multiple quantum well semiconductor laser which is capable of preventing the nonuniform injection of carriers into quantum wells, and the overflow of the electrons within the quantum wells, and which is also capable of suppressing the increase in the threshold caused by insufficient gain, and the increase in the threshold and the deterioration in the slope efficiency caused by internal absorption loss. In a multiple quantum well semiconductor laser which has an InGaAsP optical waveguide layer provided respective on the inside of a p-InP clad layer and an n-InP clad layer, and InGaAsP barrier layers and strained InGaAsP quantum well layers provided between the InP clad layers, the semiconductor laser according to this invention has the energy difference between the first quantum level of the hole in the quantum well and the top of the valence band in the barrier layer to be less than or equal to 160 meV, the energy difference between the first quantum level of the electron in the quantum well and the bottom of the conduction band in the barrier layer to be more than or equal to 30 meV, and the optical confinement factor to the quantum layer lying in the range from 0.01 to 0.07.
    • 本文公开了一种长波长多量子阱半导体激光器,其能够防止载流子不均匀地注入量子阱以及量子阱内的电子溢出,并且还能够抑制阈值引起的阈值增加 增益不足,阈值增加和内部吸收损失引起的斜率效率的恶化。 在具有分别设置在p-InP包层和n-InP覆盖层的内部的InGaAsP光波导层的多量子阱半导体激光器中,以及设置在InP覆盖层之间的InGaAsP阻挡层和应变的InGaAsP量子阱层 ,根据本发明的半导体激光器具有量子阱中的空穴的第一量子级与势垒层中的价带顶部之间的能量差小于或等于160meV, 量子阱中的电子的第一量子水平和势垒层中的导带的底部大于或等于30meV,并且量子层的光限制因子在0.01至0.07的范围内。