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    • 59. 发明授权
    • Method of fabricating ink jet printheads
    • 制造喷墨打印头的方法
    • US5716533A
    • 1998-02-10
    • US805834
    • 1997-03-03
    • James F. O'NeillEric Peeters
    • James F. O'NeillEric Peeters
    • B41J2/16H01L21/00B44C1/22
    • B41J2/1635B41J2/1604B41J2/1623B41J2/1629B41J2/1631
    • A method of fabricating ink jet printheads from channel plates with a low stress integral ink inlet filters and heater plates. The channel plates are obtained from p-type (100) silicon wafers, one surface of which has a lightly doped n-type patterned layer in the form of a screen. In the preferred embodiment, a first etch resistant material is deposited on both surfaces of the wafer and patterned on the surface of wafer opposite the one containing the n-type layer. The patterned first etch resistant material provides a first etch mask with channel and reservoir vias. A second etch resistant material is deposited over the first etch resistant material and patterned on the same wafer surface as the first etch resistant material in order to provide a second etch mask having reservoir vias smaller than the reservoir vias in the first etch mask, but aligned therewithin. The wafer with the two patterned etch masks is placed into an anisotropic etch bath and etched with a bias potential between the p-n junction formed by the patterned n-type layer and the p-type wafer and an electrode also in the etch bath. The patterned, lightly doped, n-type layer functions as an etch stop when under a bias potential, and because the doping level of the n-type layer is low, the internal stress is also low. When the reservoir recesses have been etched through the wafer leaving the patterned n-type layer covering the open bottom, the second etch resistant material is removed and the wafer replaced into the anisotropic etch bath to etch the channel recesses and complete the reservoir recesses with a similar bias potential. The first etch resistant material is removed and the channel wafer is aligned and bonded to a heater wafer. The bonded wafer pair is separated into a plurality of printheads having an integral inlet filter devoid of internal stress.
    • 从具有低应力整体式墨水入口过滤器和加热器板的通道板制造喷墨打印头的方法。 通道板从p型(100)硅晶片获得,其一个表面具有屏幕形式的轻掺杂的n型图案化层。 在优选实施例中,第一耐蚀刻材料沉积在晶片的两个表面上并在与包含n型层的晶片相对的晶片表面上图案化。 图案化的第一耐蚀刻材料提供具有通道和储存器通孔的第一蚀刻掩模。 第二耐蚀刻材料沉积在第一耐蚀刻材料上并且在与第一耐蚀刻材料相同的晶片表面上图案化,以便提供具有小于第一蚀刻掩模中的储存器通孔的储存器通孔的第二蚀刻掩模,但是对准 在其中。 将具有两个图案化蚀刻掩模的晶片放置在各向异性蚀刻槽中,并且在由图案化的n型层形成的p-n结与p型晶片之间以及也在蚀刻槽中的电极之间用偏置电位进行蚀刻。 图案化,轻掺杂的n型层在偏置电位下用作蚀刻停止,并且由于n型层的掺杂水平低,因此内部应力也较低。 当储存凹槽已被蚀刻通过晶片留下图案化的n型层覆盖开口底部时,去除第二耐蚀刻材料并将晶片替换成各向异性蚀刻槽以蚀刻通道凹槽并用一个 类似的偏置电位。 去除第一耐蚀刻材料并且将通道晶片对准并结合到加热器晶片。 接合晶片对被分离成具有不具有内部应力的整体入口过滤器的多个打印头。