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    • 52. 发明授权
    • Input protection circuit and output driver circuit comprising MIS
semiconductor device
    • 输入保护电路和包含MIS半导体器件的输出驱动电路
    • US5086322A
    • 1992-02-04
    • US422556
    • 1989-10-17
    • Tatsuya IshiiTakashi Miyakawa
    • Tatsuya IshiiTakashi Miyakawa
    • H01L27/02H01L29/06H01L29/08H01L29/417
    • H01L29/0847H01L27/0251H01L29/0684H01L29/41766
    • An MIS transistor comprises first and second concave grooves (17, 17) opposing to each other with a gate electrode (4, 39) provided therebetween. Source and drain regions (8a, 8b, 31, 34) are formed on sidewalls of the concave grooves. A configuration of the sidewall surface of the concave groove is selected such that a current density of a punch through current between the source and drain regions becomes uniform. Furthermore, a concave groove having such a configuration, for example, a taper configuration in which a space between sidwwall surfaces becomes narrower toward a bottom portion of the substrate, is formed by the reactive ion etching.The MIS transistor is employed in an input protection circuit or an output driver circuit, which enables high integration of the device and improves an input breakdown voltage.
    • MIS晶体管包括彼此相对的第一和第二凹槽(17,17),其间设置有栅电极(4,39)。 源极和漏极区域(8a,8b,31,34)形成在凹槽的侧壁上。 选择凹槽的侧壁表面的构造,使得源极和漏极区域之间的穿通电流的电流密度变得均匀。 此外,通过反应离子蚀刻形成具有这样的构造的凹槽,该凹槽例如通过反应离子蚀刻形成侧面之间的空间朝向基板的底部变窄的锥形构造。 MIS晶体管用于输入保护电路或输出驱动器电路中,可实现器件的高集成度并提高输入击穿电压。