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51. 发明授权

US08481393B2 Semiconductor substrate and method for manufacturing the same, and method for manufacturing semiconductor device 有权
标题翻译：半导体基板及其制造方法以及半导体装置的制造方法
公开(公告)号：US08481393B2
公开(公告)日：2013-07-09
申请号：US12844224
申请日：2010-07-27
申请人： Masaki Koyama , Fumito Isaka , Akihisa Shimomura , Junpei Momo
发明人： Masaki Koyama , Fumito Isaka , Akihisa Shimomura , Junpei Momo
IPC分类号： H01L21/331 , H01L21/8222
CPC分类号： H01L21/76254 , H01L21/02532 , H01L21/02667 , H01L21/02675
摘要： A semiconductor substrate is irradiated with accelerated hydrogen ions, thereby forming a damaged region including a large amount of hydrogen. After a single crystal semiconductor substrate and a supporting substrate are bonded to each other, the semiconductor substrate is heated, so that the single crystal semiconductor substrate is separated in the damaged region. A single crystal semiconductor layer which is separated from the single crystal semiconductor substrate is irradiated with a laser beam. The single crystal semiconductor layer is melted by laser beam irradiation, whereby the single crystal semiconductor layer is recrystallized to recover its crystallinity and to planarized a surface of the single crystal semiconductor layer. After the laser beam irradiation, the single crystal semiconductor layer is heated at a temperature at which the single crystal semiconductor layer is not melted, so that the lifetime of the single crystal semiconductor layer is improved.
摘要翻译：用加速的氢离子照射半导体衬底，从而形成包含大量氢的损伤区域。在单晶半导体衬底和支撑衬底彼此接合之后，加热半导体衬底，使得单晶半导体衬底在损坏区域中分离。用激光束照射与单晶半导体衬底分离的单晶半导体层。通过激光束照射使单晶半导体层熔融，由此使单晶半导体层重结晶，回收其结晶性，并使单晶半导体层的表面平坦化。在激光束照射之后，在单晶半导体层未熔融的温度下加热单晶半导体层，从而提高单晶半导体层的寿命。

52. 发明授权

US08343847B2 Manufacturing method of SOI semiconductor device 有权
标题翻译： SOI半导体器件的制造方法
公开(公告)号：US08343847B2
公开(公告)日：2013-01-01
申请号：US12575555
申请日：2009-10-08
申请人： Masaki Koyama , Junpei Momo , Eiji Higa , Hiroaki Honda , Tamae Moriwaka , Akihisa Shimomura
发明人： Masaki Koyama , Junpei Momo , Eiji Higa , Hiroaki Honda , Tamae Moriwaka , Akihisa Shimomura
IPC分类号： H01L21/76
CPC分类号： H01L27/1266 , H01L21/02381 , H01L21/02422 , H01L21/02532 , H01L21/02683 , H01L21/02686 , H01L21/76254 , H01L27/1214 , H01L27/1274 , H01L29/66772
摘要： To prevent, in the case of irradiating a single crystal semiconductor layer with a laser beam, an impurity element from being taken into the single crystal semiconductor layer at the time of laser irradiation. In a manufacturing method of an SOI substrate, a single crystal semiconductor substrate and a base substrate are prepared; an embrittlement region is formed in a region at a predetermined depth from a surface of the single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with accelerated ions; the single crystal semiconductor substrate and a base substrate are bonded to each other with an insulating layer interposed therebetween; a single crystal semiconductor layer is formed over the base substrate with the insulating layer interposed therebetween by heating the single crystal semiconductor substrate to cause separation using the embrittlement region as a boundary; an oxide film formed on the single crystal semiconductor layer is removed; and at least a surface of the single crystal semiconductor layer is melted by irradiating the surface of the single crystal semiconductor layer with a laser beam after the removal of the oxide film. The number of times the single crystal semiconductor layer is melted by the irradiation with the laser beam is one.
摘要翻译：为了防止在用激光束照射单晶半导体层的情况下，在激光照射时将杂质元素摄入单晶半导体层。在SOI衬底的制造方法中，制备单晶半导体衬底和基底衬底; 通过用加速的离子照射单晶半导体衬底，在单晶半导体衬底的表面的预定深度的区域中形成脆化区域; 单晶半导体衬底和基底衬底之间具有绝缘层而彼此接合; 通过加热单晶半导体衬底以使脆化区域作为边界进行分离，在基底衬底上形成绝缘层，形成单晶半导体层; 去除形成在单晶半导体层上的氧化膜; 并且在除去氧化膜之后，通过用激光束照射单晶半导体层的表面，使单晶半导体层的至少一个表面熔融。单晶半导体层通过激光束的照射而熔化的次数是1。

53. 发明授权

US08216914B2 Method for manufacturing SOI substrate and method for manufacturing semiconductor device 有权
标题翻译：制造SOI衬底的方法和半导体器件的制造方法
公开(公告)号：US08216914B2
公开(公告)日：2012-07-10
申请号：US12872222
申请日：2010-08-31
申请人： Masaki Koyama , Kosei Nei , Toru Hasegawa , Junpei Momo , Eiji Higa
发明人： Masaki Koyama , Kosei Nei , Toru Hasegawa , Junpei Momo , Eiji Higa
IPC分类号： H01L21/46 , H01L21/30 , H01L21/84 , H01L21/00
CPC分类号： H01L21/76254 , H01L21/02052 , H01L21/268
摘要： An object is to provide a method for manufacturing an SOI substrate including a semiconductor film with high planarity and high crystallinity. After a single crystal semiconductor film is formed over an insulating film by a separation step, a natural oxide film existing on a surface of the semiconductor film is removed and the semiconductor film is irradiated with first laser light and second laser light under an inert gas atmosphere or a reduced-pressure atmosphere. The number of shots of the first laser light that is emitted to an arbitrary point in the semiconductor film is greater than or equal to 7, preferably greater than or equal to 10 and less than or equal to 100. The number of shots of the second laser light that is emitted to an arbitrary point in the semiconductor film is greater than 0 and less than or equal to 2.
摘要翻译：本发明的目的是提供一种制造包括具有高平坦度和高结晶度的半导体膜的SOI衬底的方法。在通过分离步骤在绝缘膜上形成单晶半导体膜之后，去除存在于半导体膜表面上的自然氧化膜，并在惰性气体气氛下用第一激光和第二激光照射半导体膜或减压气氛。发射到半导体膜中的任意点的第一激光的照射次数大于或等于7，优选大于或等于10并且小于或等于100.第二次的照射次数发射到半导体膜中的任意点的激光大于0且小于或等于2。

54. 发明申请

US20110285427A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110285427A1
公开(公告)日：2011-11-24
申请号：US13129980
申请日：2010-05-17
申请人： Masaki Koyama , Yutaka Fukuda
发明人： Masaki Koyama , Yutaka Fukuda
IPC分类号： H03K3/027 , H01L29/739 , H01L29/78
CPC分类号： H01L29/7391 , H01L24/73 , H01L29/0834 , H01L29/7397 , H01L2224/48472 , H01L2924/12036 , H01L2924/13055 , H01L2924/13091 , H01L2924/30107 , H01L2924/00
摘要： A semiconductor device includes: a semiconductor substrate having a first semiconductor layer and a second semiconductor layer formed on a first surface; a diode having a first electrode and a second electrode; a control pad; a control electrode electrically coupled with the control pad; and an insulation member. The first electrode is formed on a second surface of the first semiconductor layer. The second electrode is formed on the first surface. Current flows between the first electrode and the second electrode. The control pad is arranged on the first surface so that the pad inputs a control signal for controlling an injection amount of a carrier into the first semiconductor layer. The insulation member insulates between the control electrode and the second electrode and between the control electrode and the semiconductor substrate.
摘要翻译：半导体器件包括：具有形成在第一表面上的第一半导体层和第二半导体层的半导体衬底; 具有第一电极和第二电极的二极管; 控制板与所述控制板电耦合的控制电极; 和绝缘构件。第一电极形成在第一半导体层的第二表面上。第二电极形成在第一表面上。电流在第一电极和第二电极之间流动。控制焊盘设置在第一表面上，使得焊盘输入用于控制载体进入第一半导体层的注入量的控制信号。绝缘构件在控制电极和第二电极之间以及控制电极和半导体衬底之间绝缘。

55. 发明授权

US08030177B2 Method for manufacturing semiconductor devices using embrittled layers 有权
标题翻译：使用脆化层制造半导体器件的方法
公开(公告)号：US08030177B2
公开(公告)日：2011-10-04
申请号：US12615613
申请日：2009-11-10
申请人： Akihisa Shimomura , Masaki Koyama , Yasuhiro Jinbo , Naoki Okuno
发明人： Akihisa Shimomura , Masaki Koyama , Yasuhiro Jinbo , Naoki Okuno
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/84 , H01L21/76254
摘要： An object is to provide a method for manufacturing an SOI substrate including a single crystal silicon film whose plane orientation is (100) and a single crystal silicon film whose plane orientation is (110) with high yield. A first single crystal silicon substrate whose plane orientation is (100) is doped with first ions to form a first embrittlement layer. A second single crystal silicon substrate whose plane orientation is (110) is doped with second ions to selectively form a second embrittlement layer. Only part of the first single crystal silicon substrate is separated along the first embrittlement layer by first heat treatment, thereby forming a first single crystal silicon film. A region of the second single crystal silicon substrate, in which the second embrittlement layer is not formed, is removed. Part of the second single crystal silicon substrate is separated along the second embrittlement layer by second heat treatment, thereby forming a second single crystal silicon film.
摘要翻译：本发明的目的是提供一种制造包括平面取向为（100）的单晶硅膜和具有高产率的平面取向为（110）的单晶硅膜的SOI衬底的方法。其平面取向为（100）的第一单晶硅衬底被掺杂有第一离子以形成第一脆化层。其平面取向为（110）的第二单晶硅衬底被掺杂有第二离子以选择性地形成第二脆化层。通过第一热处理，仅第一单晶硅衬底的一部分沿着第一脆化层分离，从而形成第一单晶硅膜。除去未形成第二脆性层的第二单晶硅衬底的区域。通过第二热处理沿第二脆化层分离第二单晶硅衬底的一部分，从而形成第二单晶硅膜。

56. 发明授权

US07977704B2 Semiconductor device having insulated gate semiconductor element, and insulated gate bipolar transistor 有权
标题翻译：具有绝缘栅极半导体元件和绝缘栅双极晶体管的半导体器件
公开(公告)号：US07977704B2
公开(公告)日：2011-07-12
申请号：US12320497
申请日：2009-01-27
申请人： Masaki Koyama , Yoshifumi Okabe , Makoto Asai , Takeshi Fujii , Koh Yoshikawa
发明人： Masaki Koyama , Yoshifumi Okabe , Makoto Asai , Takeshi Fujii , Koh Yoshikawa
IPC分类号： H01L29/739
CPC分类号： H01L29/7395 , H01L29/0619 , H01L29/0696 , H01L29/402 , H01L29/407 , H01L29/4238 , H01L29/66348 , H01L29/7397
摘要： A semiconductor device having an IGBT includes: a substrate; a drift layer and a base layer on the substrate; trenches penetrating the base layer to divide the base layer into base parts; an emitter region in one base part; a gate element in the trenches; an emitter electrode; and a collector electrode. The one base part provides a channel layer, and another base part provides a float layer having no emitter region. The gate element includes a gate electrode next to the channel layer and a dummy gate electrode next to the float layer. The float layer includes a first float layer adjacent to the channel layer and a second float layer apart from the channel layer. The dummy gate electrode and the first float layer are coupled with a first float wiring on the base layer. The dummy gate electrode is isolated from the second float layer.
摘要翻译：具有IGBT的半导体器件包括：基板; 衬底上的漂移层和基底层; 穿过基层的沟槽将基层分成基部; 一个基部的发射极区域; 沟槽中的栅极元件; 发射极; 和集电极。一个基座部分提供通道层，而另一个基座部件提供没有发射极区域的浮动层。栅极元件包括靠近沟道层的栅极电极和与浮置层相邻的伪栅极电极。浮子层包括与沟道层相邻的第一浮动层和与沟道层分开的第二浮体层。虚拟栅电极和第一浮动层与基层上的第一浮动布线耦合。虚拟栅电极与第二浮动层隔离。

57. 发明授权

US07920611B2 Laser apparatus, laser irradiation method, and manufacturing method of semiconductor device 有权
标题翻译：激光装置，激光照射方法以及半导体装置的制造方法
公开(公告)号：US07920611B2
公开(公告)日：2011-04-05
申请号：US12000814
申请日：2007-12-18
申请人： Hidekazu Miyairi , Akihisa Shimomura , Tamae Takano , Masaki Koyama , Koichiro Tanaka
发明人： Hidekazu Miyairi , Akihisa Shimomura , Tamae Takano , Masaki Koyama , Koichiro Tanaka
IPC分类号： H01S3/13 , H01S3/22
CPC分类号： H01S3/131 , B23K26/702
摘要： It is an object to provide a laser apparatus, a laser irradiating method and a manufacturing method of a semiconductor device that make laser energy more stable. To attain the object, a part of laser beam emitted from an oscillator is sampled to generate an electric signal that contains as data energy fluctuation of a laser beam. The electric signal is subjected to signal processing to calculate the frequency, amplitude, and phase of the energy fluctuation of the laser beam. The transmittance of a light amount adjusting means is controlled in order that the transmittance changes in antiphase to the phase of the energy fluctuation of the laser beam and with an amplitude capable of reducing the amplitude of laser beam emitted from the oscillator, the control being made based on the phase difference between the phase of a signal that is in synchronization with oscillation of laser beam emitted from the oscillator and the phase calculated, on the energy ratio of the sampled laser beam to laser beam emitted from the oscillator, and on the frequency and amplitude calculated. In the light amount adjusting means, energy of the laser beam oscillated from the oscillator energy is adjusted.
摘要翻译：本发明的目的是提供使激光能更稳定的半导体器件的激光装置，激光照射方法和制造方法。为了达到该目的，从振荡器发射的激光束的一部分被采样以产生包含作为激光束的数据能量波动的电信号。对信号进行信号处理，计算激光束的能量波动的频率，振幅和相位。控制光量调节装置的透射率，以便透射率与激光束的能量波动的相位相反，并且能够减小从振荡器发射的激光束的振幅的振幅，进行控制基于与从振荡器发射的激光束的振荡同步的信号的相位与计算的相位之间的相位差相对于从采样的激光束到从振荡器发射的激光束的能量比，以及频率并计算振幅。在光量调节装置中，调整从振荡器能量振荡的激光束的能量。

58. 发明申请

US20110012195A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110012195A1
公开(公告)日：2011-01-20
申请号：US12865330
申请日：2009-01-28
申请人： Seiji Momota , Hitoshi Abe , Takashi Shiigi , Takeshi Fujii , Koh Yoshikawa , Tetsutaro Imagawa , Masaki Koyama , Makoto Asai
发明人： Seiji Momota , Hitoshi Abe , Takashi Shiigi , Takeshi Fujii , Koh Yoshikawa , Tetsutaro Imagawa , Masaki Koyama , Makoto Asai
IPC分类号： H01L27/11
CPC分类号： H01L27/0629 , H01L27/0658 , H01L29/0696 , H01L29/0878 , H01L29/1095 , H01L29/4236 , H01L29/7395 , H01L29/7397 , H01L29/7815 , H01L29/7827
摘要： Between a source electrode (25) of a main device (24) and a current sensing electrode (22) of a current detection device (21), a resistor for detecting current is connected. Dielectric withstand voltage of gate insulator (36) is larger than a product of the resistor and maximal current flowing through the current detection device (21) with reverse bias. A diffusion length of a p-body region (32) of the main device (24) is shorter than that of a p-body (31) of the current detection device (21). A curvature radius at an end portion of the p-body region (32) of the main device (24) is smaller than that of the p-body (31) of the current detection device (21). As a result, at the inverse bias, electric field at the end portion of the p-body region (32) of the main device (24) becomes stronger than that of the p-body region (31) of the current detection device (21). Consequently, avalanche breakdown tends to occur earlier in the main device 24 than the current detection device (21).
摘要翻译：在主装置（24）的源电极（25）和电流检测装置（21）的电流检测电极（22）之间连接用于检测电流的电阻器。栅极绝缘体（36）的介电耐受电压大于电阻器和流过电流检测装置（21）的反向偏压的最大电流的乘积。主装置（24）的p体区域（32）的扩散长度短于电流检测装置（21）的p体（31）的扩散长度。主装置（24）的p体区域（32）的端部的曲率半径比电流检测装置（21）的p体（31）的曲率半径小。结果，在逆偏压下，主装置（24）的p体区域（32）的端部的电场变得比电流检测装置的p体区域（31）的电场强 21）。因此，主装置24中的雪崩击穿比电流检测装置（21）更容易发生。

59. 发明授权

US07816232B2 Method for manufacturing semiconductor substrate and semiconductor substrate manufacturing apparatus 有权
标题翻译：半导体衬底和半导体衬底制造装置的制造方法
公开(公告)号：US07816232B2
公开(公告)日：2010-10-19
申请号：US12275809
申请日：2008-11-21
申请人： Akihisa Shimomura , Masaki Koyama , Satohiro Okamoto
发明人： Akihisa Shimomura , Masaki Koyama , Satohiro Okamoto
IPC分类号： H01L21/30
CPC分类号： H01L21/76254
摘要： An object is to provide a uniform semiconductor substrate in which defective bonding is reduced. A further object is to manufacture the semiconductor substrate with a high yield. A first substrate and a second substrate are bonded in a reduced-pressure atmosphere by placing the first substrate at a certain region surrounded by an airtight holding mechanism provided over a support to surround the certain region of a surface of the support; placing the second substrate so as to come to be in contact with the airtight holding mechanism to ensure airtightness of a space surrounded by the support, the airtight holding mechanism, and the second substrate; evacuating the space whose airtightness is secured, thereby reducing an pressure in the space; disposing the second substrate in close contact with the first substrate using difference between the pressure in the space and outside atmospheric pressure; and performing heat treatment.
摘要翻译：目的在于提供一种均匀的半导体衬底，其中不良接合被降低。另一个目的是以高产率制造半导体衬底。第一基板和第二基板通过将第一基板放置在由设置在支撑件上的气密保持机构包围的一定区域上而在减压气氛中接合，以围绕支撑体的表面的特定区域; 将第二基板放置成与气密保持机构接触，以确保由支撑体，气密保持机构和第二基板包围的空间的气密性; 疏散其气密性的空间，从而减小空间中的压力; 使用所述空间中的压力和外部大气压之间的差异将所述第二基板设置为与所述第一基板紧密接触; 并进行热处理。

60. 发明申请

US20100248444A1 METHOD FOR MANUFACTURING SOI SUBSTRATE 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US20100248444A1
公开(公告)日：2010-09-30
申请号：US12729983
申请日：2010-03-23
申请人： Shunpei Yamazaki , Masaki Koyama , Kosei Noda , Kenichiro Makino , Hideto Ohnuma , Kosei Nei
发明人： Shunpei Yamazaki , Masaki Koyama , Kosei Noda , Kenichiro Makino , Hideto Ohnuma , Kosei Nei
IPC分类号： H01L21/762 , C30B1/02
CPC分类号： H01L27/1274 , C30B13/24 , C30B29/06 , C30B31/22 , C30B33/02 , C30B33/06 , H01L21/02532 , H01L21/0262 , H01L21/02675 , H01L21/76254 , H01L27/1214 , H01L27/1218 , H01L27/1281 , H01L29/66772
摘要： A single crystal semiconductor separated from a single crystal semiconductor substrate is formed partly over a supporting substrate with a buffer layer provided therebetween. The single crystal semiconductor is separated from the single crystal semiconductor substrate by irradiation with accelerated ions, formation of a fragile layer by the ion irradiation, and heat treatment. A non-single crystal semiconductor layer is formed over the single crystal semiconductor and irradiated with a laser beam to be crystallized, whereby an SOI substrate is manufactured.
摘要翻译：从单晶半导体衬底分离的单晶半导体部分地在支撑衬底上形成，其间设置有缓冲层。通过照射加速离子，通过离子照射形成脆性层，进行热处理，将单晶半导体与单晶半导体基板分离。在单晶半导体上形成非单晶半导体层，并照射待结晶的激光束，由此制造SOI衬底。

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