会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 52. 发明申请
    • Step pile fabric and process for producing the same
    • 阶梯织物及其生产方法
    • US20070074353A1
    • 2007-04-05
    • US10583242
    • 2004-12-24
    • Minoru KurodaKohei KawamuraSohei NishidaMasahiko Mihoichi
    • Minoru KurodaKohei KawamuraSohei NishidaMasahiko Mihoichi
    • C11D3/00
    • D03D27/00D01F6/38D06C23/04D06P3/854D06P5/20Y10T428/23929Y10T428/23957
    • An increased number of colors can be assorted in the down hair part of a step pile fabric more easily than before by carrying out dry heat treatment of a pile fabric comprising an acrylic shrinkable fiber that can be dyed in a specific low-temperature region. There is provided a step pile fabric obtained by treating a pile fabric comprising an acrylic shrinkable fiber, which comprises comprising an acrylic copolymer comprising 0.5 to 10 wt % of a sulfonic acid group-containing monomer, dyed at 55 to 85° C., with dry heat at 110 to 150° C. for 20 minutes or less, the acrylic shrinkable fiber having a shrinkage percentage of 18% or more calculated by the following formula (1): Shrinkage percentage (%)=100×(1−Sa/Sb)  (1)wherein Sb represents a pile length of the down hair component before the dry heat treatment, and Sa represents a pile length of the down hair part (component) after the dry heat treatment.
    • 通过对可以在特定的低温区域染色的丙烯酸类收缩性纤维的绒头织物进行干热处理,可以更容易地在步骤绒毛织物的羽毛部分中增加颜色的增加。 提供了一种通过处理包含丙烯酸类收缩纤维的绒头织物而获得的阶绒绒织物,其包括含有0.5至10重量%的含有磺酸基的单体的丙烯酸共聚物,其在55至85℃下染色, 在110〜150℃下干燥20分钟以下,通过下式(1)计算出的收缩率为18%以上的丙烯酸类收缩性纤维:<?在线式说明=“In-line 公式“end =”lead“?>收缩率(%)= 100x(1-Sa / Sb)(1)<?in-line-formula description =”In-line formula“end =”tail“?>其中Sb 表示干热处理前的羽绒毛组件的绒头长度,Sa表示干燥热处理后的羽毛部(绒毛部分)的绒头长度。
    • 53. 发明授权
    • Crushing method for waste containing materials unfit for crushing and apparatus for its practice
    • 用于破碎粉碎的材料的粉碎方法及其实践设备
    • US06311908B1
    • 2001-11-06
    • US09462750
    • 2000-01-14
    • Takao KajiyamaKohei KawamuraRyozou KushidaHiroshi Arito
    • Takao KajiyamaKohei KawamuraRyozou KushidaHiroshi Arito
    • B02C1806
    • B02C18/14B02C18/142B02C18/145B02C18/2233B02C19/22B02C2018/147
    • The present invention is designed to perform a primary crushing operation including hooking and crushing of the top face part of waste through cooperation of a supporting projection and a first crushing roller. The first crushing roller also conveys the waste. A secondary crushing operation includes crushing of a bottom face part and the top face part of the waste W, while lifting the waste is performed by the first crushing roller and a second crushing roller. And, a tertiary crushing operation including crushing of the object material, that is to be crushed, into small pieces and discharging of these pieces separately from the materials that are unfit for crushing is performed by the second crushing roller and a third crushing roller. The primary crushing operation, secondary crushing operation and tertiary crushing operation are performed one after another, for the purpose of separating and discharging materials that are unfit for crushing without deforming them, and accurately crushing the object material such as frame member, etc., even if the waste is directly submitted to the crushing operations without removing the materials that are unfit for crushing such as a motor, compressor, etc. The recovery ratio of valuables is thus improved upon.
    • 本发明旨在进行主要的粉碎操作,包括通过支撑突起和第一破碎辊的协作来对废物的顶面部分进行钩压和破碎。 第一台破碎辊也传送废物。 次级破碎操作包括破碎废物W的底面部分和顶面部分,同时由第一破碎辊和第二破碎辊进行废物的提取。 并且,通过第二破碎辊和第三破碎辊进行三次破碎操作,包括将要粉碎的物体粉碎成小块并将其与不适于粉碎的材料分开排出。 一次破碎操作,二次破碎操作和三次破碎操作一个接一个地进行,用于分离和排出不会变形的不适于粉碎的材料,并且甚至准确地粉碎诸如框架构件等的物体材料 如果废物直接进入破碎作业,而不去除不适用于电动机,压缩机等破碎的材料,则贵重物品的回收率得到改善。
    • 55. 发明授权
    • Plasma film forming method and apparatus and plasma processing apparatus
    • 等离子体成膜方法及装置及等离子体处理装置
    • US5531834A
    • 1996-07-02
    • US273878
    • 1994-07-12
    • Shuichi IshizukaKohei KawamuraJiro HataAkira Suzuki
    • Shuichi IshizukaKohei KawamuraJiro HataAkira Suzuki
    • C23C16/509H01J37/32H01L21/3105C23C16/00
    • H01J37/32082C23C16/509H01J37/3266H01L21/31051
    • A plasma film forming apparatus comprises gas supply means for feeding a processing gas into a processing chamber, a first electrode opposed to an object of processing in the processing chamber, a second electrode in the form of a flat coil facing the first electrode across the object of processing, pressure regulating means for keeping the pressure in the processing chamber at 0.1 Torr or below, heating means for heating the object of processing to a predetermined temperature, and application means for applying radio-frequency power between the first and second electrodes, whereby the processing gas is converted into a plasma such that a film is formed on the surface of the object of processing through reaction of ions or active seeds in the plasma. When radio-frequency power is applied between the pair of electrodes, a radio-frequency electric field is formed. Since one of the electrodes is the flat coil, however, a magnetic field is formed. As a result, the processing gas is converted into a plasma by electrical and magnetic energies. Accordingly, the processing gas can be changed into a plasma under low pressure, and a high-density plasma can be generated even under a pressure of 0.1 Torr or below. Thus, the efficiency of ion application to the surface of the object of processing is high, and the effect of impurity extraction is great.
    • 等离子体膜形成装置包括用于将处理气体供给到处理室中的气体供给装置,与处理室中的处理对象相对的第一电极,与面对第一电极的平面线圈形式的第二电极 处理用的压力调节机构,将处理室内的压力保持在0.1Torr以下,将加工对象物加热到预定温度的加热装置,以及在第一和第二电极之间施加射频功率的施加装置,由此 处理气体转化为等离子体,使得通过等离子体中的离子或活性种子的反应在加工对象的表面上形成膜。 当在一对电极之间施加射频电力时,形成射频电场。 然而,由于电极中的一个是扁平线圈,所以形成磁场。 结果,处理气体通过电和能量转换成等离子体。 因此,处理气体可以在低压下变为等离子体,即使在0.1Torr以下的压力下也能够产生高密度的等离子体。 因此,离子施加到加工对象表面的效率高,杂质提取的效果大。
    • 56. 发明授权
    • Method and apparatus for processing surface of semiconductor layer
    • 半导体层表面处理方法及装置
    • US5308791A
    • 1994-05-03
    • US848357
    • 1992-03-09
    • Yasuhiro HoriikeKohei Kawamura
    • Yasuhiro HoriikeKohei Kawamura
    • C23F4/00H01L21/00H01L21/302H01L21/304H01L21/306H01L21/3065
    • H01L21/02046H01L21/67028Y10S438/906Y10S438/974
    • An apparatus for processing the surface of an Si wafer includes a vacuum cleaning chamber in which said Si wafer is housed. He gas is supplied into the cleaning chamber and micro-wave and magnetic field are applied to the He gas to generate excited species which emit vacuum ultraviolet. The vacuum ultraviolet is radiated onto the wafer surface to enable its energy to cut bonds between Si atoms of said wafer and O atoms and forming a natural oxide film on the wafer surface. Ar gas is also supplied into the cleaning chamber to create ions of said Ar gas due to energy added from said excited species. Said ions are supplied onto the wafer surface to form floating potential above said wafer surface. Said ions collide against said wafer surface to eliminate O atoms from said wafer surface. A process chamber is connected to the cleaning chamber through a load lock chamber. Al film is formed on the wafer surface, from which the natural oxide film has been eliminated, in the process chamber.
    • 一种用于处理Si晶片表面的设备包括其中容纳有所述Si晶片的真空清洁室。 将He气供应到清洗室中,并将微波和磁场施加到He气体以产生发射真空紫外线的激发物质。 将真空紫外线辐射到晶片表面上,使其能量切割所述晶片的Si原子和O原子之间的键,并在晶片表面上形成天然氧化物膜。 由于从所述激发物质添加的能量,也将Ar气体供应到清洁室中以产生所述Ar气体的离子。 所述离子被提供到晶片表面上以在所述晶片表面上方形成浮动电位。 所述离子与所述晶片表面碰撞以从所述晶片表面消除O原子。 处理室通过负载锁定室连接到清洁室。 在处理室中在晶片表面上形成Al膜,其中已经除去了自然氧化膜。
    • 57. 发明授权
    • Ion generator
    • 离子发生器
    • US5101110A
    • 1992-03-31
    • US611046
    • 1990-11-09
    • Masahiko MatsudoAkira KoshiishiNaoki TakayamaKohei Kawamura
    • Masahiko MatsudoAkira KoshiishiNaoki TakayamaKohei Kawamura
    • H01J27/20H01J37/08
    • H01J37/08H01J27/20H01J2237/30
    • An ion generator comprises an electron-generating chamber and an ion-generating chamber. Ions are generated by introducing a raw material gas into the ion-generating chamber and irradiating the raw material gas with electrodes generated in the electron-generating chamber. The ions, thus generated, are drawn by ion-collecting electrodes and guided out of the ion-generating chamber through a slit formed in the ion output section of the ion-generating chamber. That corner of the ion-generating chamber which faces the ion-collecting electrodes is curved, and that outer wall of the ion-generating chamber which faces the ion-collecting electrodes is specular. With this structure, an undesirable spark discharge does not easily take place with reference to the ion-collecting electrodes, so that damage to the structural components of the ion generator is suppressed. Further, the ion output section is removable from the main body of the ion-generating chamber. Therefore, only the ion output section can be replaced with a new one, if it is worn out.
    • 离子发生器包括电子发生室和离子产生室。 通过将原料气体引入离子产生室并用在电子发生室中产生的电极照射原料气体而产生离子。 这样产生的离子被离子收集电极拉出,并通过形成在离子产生室的离子输出部分中的狭缝引出离子产生室。 面向离子收集电极的离子产生室的角是弯曲的,离子收集电极的面向离子收集电极的外壁是镜面的。 利用这种结构,参考离子收集电极不容易发生不期望的火花放电,从而抑制对离子发生器的结构部件的损坏。 此外,离子输出部分可从离子产生室的主体移除。 因此,只有离子输出部分可以被更换新的离子输出部分。
    • 58. 发明授权
    • Electron beam excitation ion source
    • 电子束激发离子源
    • US5089747A
    • 1992-02-18
    • US480765
    • 1990-02-16
    • Akira KoshiishiKohei KawamuraNaoki Takayama
    • Akira KoshiishiKohei KawamuraNaoki Takayama
    • H01J27/20H01J37/08
    • H01J37/08H01J27/20
    • An electron beam excitation ion source includes a housing having an ion generation chamber therein, a port for supplying a discharge gas to the ion generation chamber, a porous electrode for supplying accelerated electrons to the ion generation chamber from an electron generation chamber, causing the accelerated electrons to collide against the discharge gas to generate a plasma containing ions in the ion generation chamber. The housing have an ion extraction slit port through which the ions are extracted from the ion generation chamber outside the housing. An electrode is formed around the ion extraction port, for causing a local discharge around the ion extraction port so as to guide the ions in the plasma to the ion extraction port.
    • 电子束激发离子源包括其中具有离子产生室的壳体,用于向离子产生室供给放电气体的端口,用于从电子发生室向离子产生室提供加速电子的多孔电极, 电子与放电气体碰撞以在离子产生室中产生含有离子的等离子体。 壳体具有离子提取狭缝端口,离子从外壳外部的离子产生室中提取离子。 在离子提取口周围形成电极,用于在离子提取口周围局部放电,以将等离子体中的离子引导到离子提取口。