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1. 发明授权

US5028791A Electron beam excitation ion source 失效
标题翻译：电子束激发离子源
公开(公告)号：US5028791A
公开(公告)日：1991-07-02
申请号：US486256
申请日：1990-02-28
申请人： Akira Koshiishi , Kohei Kawamura , Masahiko Matsudo , Naoki Takayama
发明人： Akira Koshiishi , Kohei Kawamura , Masahiko Matsudo , Naoki Takayama
IPC分类号： H01J27/08 , H01J27/20
CPC分类号： H01J27/08 , H01J27/20
摘要： An electron beam excitation ion source comprises a housing having an ion generation chamber therein. A discharge gas and an accelerated electrons are introduced into the ion generation chamber, causing the accelerated electrons to collide against the discharge gas to generate a plasma containing ions in the ion generation chamber. The housing includes an ion extraction port through which the ions are extracted from the ion generation chamber outside the housing and an electron reflecting member exposed in the ion generation chamber to reflect the electrons.
摘要翻译：电子束激发离子源包括其中具有离子产生室的壳体。放电气体和加速的电子被引入到离子产生室中，导致加速的电子与放电气体碰撞，以产生离子产生室中含有离子的等离子体。壳体包括离子提取端口，离子从壳体外部的离子产生室提取出来，而电子反射部件暴露在离子产生室中以反射电子。

2. 发明授权

US5252892A Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5252892A
公开(公告)日：1993-10-12
申请号：US786009
申请日：1991-10-31
申请人： Akira Koshiishi , Kohei Kawamura , Masahiko Matsudo , Naoki Takayama
发明人： Akira Koshiishi , Kohei Kawamura , Masahiko Matsudo , Naoki Takayama
IPC分类号： H01J27/20 , H01J37/32 , H05H1/24 , H05H1/02
CPC分类号： H01J37/32495 , H01J27/20 , H01J37/3233 , H01J37/32559 , H05H1/24
摘要： A plasma processing apparatus includes a filament mounted in an electron generation chamber for producing plasma of a discharge gas, thereby generating electrons. The electrons are supplied from the electron generation chamber into an ion generation chamber through electron passage hole between both chambers to produce plasma of a processing gas inside the ion generation chamber. The chambers are formed of conductive ceramics to constitute electrodes.
摘要翻译：等离子体处理装置包括安装在用于产生放电气体的等离子体的电子发生室中的灯丝，从而产生电子。电子从电子发生室通过两个室之间的电子通过孔供给到离子发生室，以产生离子产生室内的处理气体的等离子体。这些室由导电陶瓷形成以构成电极。

3. 发明授权

US5101110A Ion generator 失效
标题翻译：离子发生器
公开(公告)号：US5101110A
公开(公告)日：1992-03-31
申请号：US611046
申请日：1990-11-09
申请人： Masahiko Matsudo , Akira Koshiishi , Naoki Takayama , Kohei Kawamura
发明人： Masahiko Matsudo , Akira Koshiishi , Naoki Takayama , Kohei Kawamura
IPC分类号： H01J27/20 , H01J37/08
CPC分类号： H01J37/08 , H01J27/20 , H01J2237/30
摘要： An ion generator comprises an electron-generating chamber and an ion-generating chamber. Ions are generated by introducing a raw material gas into the ion-generating chamber and irradiating the raw material gas with electrodes generated in the electron-generating chamber. The ions, thus generated, are drawn by ion-collecting electrodes and guided out of the ion-generating chamber through a slit formed in the ion output section of the ion-generating chamber. That corner of the ion-generating chamber which faces the ion-collecting electrodes is curved, and that outer wall of the ion-generating chamber which faces the ion-collecting electrodes is specular. With this structure, an undesirable spark discharge does not easily take place with reference to the ion-collecting electrodes, so that damage to the structural components of the ion generator is suppressed. Further, the ion output section is removable from the main body of the ion-generating chamber. Therefore, only the ion output section can be replaced with a new one, if it is worn out.
摘要翻译：离子发生器包括电子发生室和离子产生室。通过将原料气体引入离子产生室并用在电子发生室中产生的电极照射原料气体而产生离子。这样产生的离子被离子收集电极拉出，并通过形成在离子产生室的离子输出部分中的狭缝引出离子产生室。面向离子收集电极的离子产生室的角是弯曲的，离子收集电极的面向离子收集电极的外壁是镜面的。利用这种结构，参考离子收集电极不容易发生不期望的火花放电，从而抑制对离子发生器的结构部件的损坏。此外，离子输出部分可从离子产生室的主体移除。因此，只有离子输出部分可以被更换新的离子输出部分。

4. 发明授权

US5089747A Electron beam excitation ion source 失效
标题翻译：电子束激发离子源
公开(公告)号：US5089747A
公开(公告)日：1992-02-18
申请号：US480765
申请日：1990-02-16
申请人： Akira Koshiishi , Kohei Kawamura , Naoki Takayama
发明人： Akira Koshiishi , Kohei Kawamura , Naoki Takayama
IPC分类号： H01J27/20 , H01J37/08
CPC分类号： H01J37/08 , H01J27/20
摘要： An electron beam excitation ion source includes a housing having an ion generation chamber therein, a port for supplying a discharge gas to the ion generation chamber, a porous electrode for supplying accelerated electrons to the ion generation chamber from an electron generation chamber, causing the accelerated electrons to collide against the discharge gas to generate a plasma containing ions in the ion generation chamber. The housing have an ion extraction slit port through which the ions are extracted from the ion generation chamber outside the housing. An electrode is formed around the ion extraction port, for causing a local discharge around the ion extraction port so as to guide the ions in the plasma to the ion extraction port.
摘要翻译：电子束激发离子源包括其中具有离子产生室的壳体，用于向离子产生室供给放电气体的端口，用于从电子发生室向离子产生室提供加速电子的多孔电极，电子与放电气体碰撞以在离子产生室中产生含有离子的等离子体。壳体具有离子提取狭缝端口，离子从外壳外部的离子产生室中提取离子。在离子提取口周围形成电极，用于在离子提取口周围局部放电，以将等离子体中的离子引导到离子提取口。

5. 发明授权

US5083061A Electron beam excited ion source 失效
标题翻译：电子束激发离子源
公开(公告)号：US5083061A
公开(公告)日：1992-01-21
申请号：US614600
申请日：1990-11-15
申请人： Akira Koshiishi , Kohei Kawamura
发明人： Akira Koshiishi , Kohei Kawamura
IPC分类号： H01J27/08 , H01J27/20 , H01J37/08 , H01L21/265
CPC分类号： H01J27/08 , H01J2237/08 , H01J2237/31701
摘要： An ion source according to the present invention includes a first chamber, including a main chamber having an electron generating arrangement therein, and a sub-chamber communicating with the main chamber through a nozzle, for producing a first plasma by a discharge. A supply is also provided for supplying a first gas for a discharge into the main chamber, as well as an electron extracting arrangement for extracting electrons from the first plasma. Also included are a second chamber for producing a second plasma by discharge excitation of the extracted electrons and ionizing a second gas as a source gas, a further supply for supplying the second gas into the second chamber, and a magnetic field generator for generating a magnetic field for guiding the extracted electrons toward the second chamber. The electron extracting arrangement includes an electrode between the sub-chamber and the second chamber. The electrode has a first hole, formed at a position opposite to the opening of the nozzle, for allowing the extracted electrons to pass therethrough and to move into the second chamber, and second holes, arranged around the first hole, for allowing part of the first gas injected from the nozzle to pass therethrough and to move into the second chamber. Part of the first gas is drawn into the second chamber through the second holes of the electrode, and the density of the first gas passing through the first hole is decreased.
摘要翻译：根据本发明的离子源包括：第一室，包括其中具有电子产生装置的主室，以及通过喷嘴与主室连通的子室，用于通过排放产生第一等离子体。还提供一种用于将第一气体供应到主室中的电源，以及用于从第一等离子体中提取电子的电子提取装置。还包括第二室，用于通过所提取的电子的放电激发产生第二等离子体，并将作为源气体的第二气体电离，用于将第二气体供应到第二室中的另外的供应源，以及用于产生磁场的磁场发生器用于将提取的电子引导到第二室。电子提取装置包括在子室和第二室之间的电极。电极具有形成在与喷嘴的开口相对的位置处的第一孔，用于允许所提取的电子通过并移动到第二室中，以及设置在第一孔周围的第二孔，用于允许部分从喷嘴喷射的第一气体通过并移动到第二室中。第一气体的一部分通过电极的第二孔被吸入第二室，并且通过第一孔的第一气体的密度降低。

6. 发明授权

US4749912A Ion-producing apparatus 失效
标题翻译：离子产生装置
公开(公告)号：US4749912A
公开(公告)日：1988-06-07
申请号：US54496
申请日：1987-05-27
申请人： Tamio Hara , Manabu Hamagaki , Yoshinobu Aoyagi , Susumu Namba , Nobuo Ishii , Naoki Takayama , Kohei Kawamura
发明人： Tamio Hara , Manabu Hamagaki , Yoshinobu Aoyagi , Susumu Namba , Nobuo Ishii , Naoki Takayama , Kohei Kawamura
IPC分类号： H01J27/08 , G01T1/20 , H01J27/00
CPC分类号： H01J27/08
摘要： An ion-producing apparatus comprises an electron-producing vessel having an electron-producing chamber, an ion-producing vessel having an ion-producing chamber communicating with the electron-producing chamber, a cathode provided at one end of the electron-producing vessel, an accelerating electrode provided within the ion-producing chamber, for allowing passage of electrons, an anode provided between the cathode and the accelerating electrode, and a power supply circuit for providing a potential difference between the cathode and the anode, thereby to produce electrons in the gap between the cathode and the anode. A vacuum pump is provided for evacuating gas from the ion-producing chamber. A partition is provided within the electron-producing vessel, between the cathode and the anode to divide the electron-producing vessel into a cathode-side chamber and an anode-side chamber, and hinders a gas flow from the cathode-side chamber to the anode-side chamber to apply a pressure difference between both chambers.
摘要翻译：离子产生装置包括具有电子产生室的电子产生容器，具有与电子产生室连通的离子产生室的离子产生容器，设置在电子产生容器的一端的阴极，设置在离子产生室内的用于允许电子通过的加速电极，设置在阴极和加速电极之间的阳极，以及用于在阴极和阳极之间提供电位差的电源电路，从而在阴极和阳极之间的间隙。提供真空泵用于从离子产生室排出气体。在电子产生容器内，在阴极和阳极之间设置隔板，以将电子产生容器分成阴极侧室和阳极侧室，并阻止气体从阴极侧室流向阳极侧室，以在两个室之间施加压力差。

7. 发明授权

US08197913B2 Film forming method for a semiconductor 有权
标题翻译：半导体成膜方法
公开(公告)号：US08197913B2
公开(公告)日：2012-06-12
申请号：US12008770
申请日：2008-01-14
申请人： Takaaki Matsuoka , Kohei Kawamura
发明人： Takaaki Matsuoka , Kohei Kawamura
IPC分类号： H05H1/24
CPC分类号： H01L21/3148 , C23C16/0272 , C23C16/36 , C23C16/511 , H01L21/3185 , H01L21/76822 , H01L21/76829
摘要： The present invention is a plasma processing method for forming a film on a substrate, the method including the steps of processing a first material gas with plasma having an electron density W and an electron temperature X, processing a second material gas with plasma having an electron density Y, which is different from the electron density W, and an electron temperature Z, which is different from the electron temperature X, and forming the film on the substrate by reacting the processed first material gas and the processed second material gas.
摘要翻译：本发明是一种用于在基板上形成膜的等离子体处理方法，该方法包括以等离子体处理具有电子密度W和电子温度X的等离子体的第一原料气体的处理步骤，用具有电子的等离子体处理第二原料气体与电子密度W不同的密度Y和与电子温度X不同的电子温度Z，并且通过使被处理的第一原料气体和被处理的第二原料气体反应而在基板上形成膜。

8. 发明申请

US20100032844A1 INTERLAYER INSULATING FILM, WIRING STRUCTURE AND ELECTRONIC DEVICE AND METHODS OF MANUFACTURING THE SAME 有权
标题翻译：层间绝缘膜，接线结构和电子器件及其制造方法
公开(公告)号：US20100032844A1
公开(公告)日：2010-02-11
申请号：US12514173
申请日：2007-11-08
申请人： Tadahiro Ohmi , Seiji Yasuda , Atsutoshi Inokuchi , Takaaki Matsuoka , Kohei Kawamura
发明人： Tadahiro Ohmi , Seiji Yasuda , Atsutoshi Inokuchi , Takaaki Matsuoka , Kohei Kawamura
IPC分类号： H01L23/48
CPC分类号： H01L21/3127 , H01L21/0212 , H01L21/02274 , H01L21/02304 , H01L21/76829 , H01L21/76835 , H01L21/76843 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A wiring structure of a semiconductor device or the like includes an interlayer insulating film having a fluorocarbon film formed on an underlayer, and a conductor buried in the interlayer insulating film. The fluorocarbon film contains nitrogen and is low in dielectric constant, excellent in reproducibility and stable.
摘要翻译：半导体器件等的布线结构包括具有形成在底层上的氟碳膜的层间绝缘膜和埋在层间绝缘膜中的导体。氟碳膜含氮，介电常数低，重现性好，稳定性好。

9. 发明申请

US20100032838A1 AMORPHOUS CARBON FILM, SEMICONDUCTOR DEVICE, FILM FORMING METHOD, FILM FORMING APPARATUS AND STORAGE MEDIUM 审中-公开
标题翻译：非晶碳膜，半导体器件，膜成膜方法，成膜装置和储存介质
公开(公告)号：US20100032838A1
公开(公告)日：2010-02-11
申请号：US12516862
申请日：2007-11-30
申请人： Yoshiyuki Kikuchi , Yasuo Kobayashi , Kohei Kawamura , Toshihisa Nozawa , Hiraku Ishikawa
发明人： Yoshiyuki Kikuchi , Yasuo Kobayashi , Kohei Kawamura , Toshihisa Nozawa , Hiraku Ishikawa
IPC分类号： H01L23/532 , H01L21/314 , C09D1/00
CPC分类号： H01L21/02115 , C23C16/26 , H01L21/02123 , H01L21/02274 , H01L21/0276 , H01L21/31144 , H01L21/3146 , H01L21/76811 , H01L21/76834 , H01L21/76835 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Provided is an amorphous carbon film having a high elastic modulus and a low thermal contraction rate with a suppressed low dielectric constant, a semiconductor device including the amorphous carbon film and a technology for forming the amorphous carbon film. Since the amorphous carbon film is formed by controlling an additive amount of Si (silicon) during film formation, it is possible to form the amorphous carbon film having a high elastic modulus and a low thermal contraction rate with a suppressed dielectric constant as low as 3.3 or less. Accordingly, when the amorphous carbon film is used as a film in the semiconductor device, troubles such as a film peeling can be suppressed.
摘要翻译：本发明提供一种具有高弹性模量和低收缩率以及低介电常数的非晶碳膜，包括非晶碳膜的半导体器件和用于形成非晶碳膜的技术。由于通过在成膜期间控制Si（硅）的添加量来形成无定形碳膜，所以可以形成具有高的弹性模量和低热收缩率的无定形碳膜，其介电常数低至3.3 或更少。因此，当在半导体器件中使用无定形碳膜作为膜时，可以抑制诸如膜剥离的问题。

10. 发明申请

US20070243377A1 Modacrylic Shrinkable Fiber and Method for Manufacturing The Same 有权
标题翻译：改性聚丙烯酸收缩纤维及其制造方法
公开(公告)号：US20070243377A1
公开(公告)日：2007-10-18
申请号：US11632604
申请日：2005-07-08
申请人： Sohei Nishida , Kohei Kawamura , Toshiaki Ebisu
发明人： Sohei Nishida , Kohei Kawamura , Toshiaki Ebisu
IPC分类号： D02G3/00 , D02G3/02
CPC分类号： D01F6/54 , C08F220/14 , C08F220/44 , C08F220/58 , C08F228/02 , D01F6/48 , Y10T428/2913 , Y10T428/2929 , Y10T428/2931 , Y10T442/64
摘要： A modacrylic shrinkable fiber according to the present invention is containing a polymer composition obtained by mixing 50 to 99 parts by weight of a polymer (A) containing 40 wt % to 80 wt % of acrylonitrile, 20 wt % to 60 wt % of a halogen-ontaining monomer and 0 wt % to 5 wt % of a sulfonic-acid-containing monomer, and 1 to 50 parts by weight of a polymer (B) containing 5 wt % to 70 wt % of acrylonitrile, 20 wt % to 94 wt % of an acrylic ester and 1 wt % to 40 wt % of a sulfonic-acid-containing monomer containing a methallylsulfonic acid or metal salts thereof or amine salts thereof, in which a total amount of the polymer (A) and the polymer (B) is 100 parts by weight. In this way, a modacrylic shrinkable fiber that has a favorable color development property after dyeing and a high shrinkage ratio even after dyeing is obtained.
摘要翻译：根据本发明的改性聚丙烯酸收缩纤维包含通过混合50至99重量份的含有40重量％至80重量％的丙烯腈，20重量％至60重量％的卤素的聚合物（A）而获得的聚合物组合物的单体和0重量％〜5重量％的含磺酸的单体，和1〜50重量份的含有5重量％〜70重量％的丙烯腈的聚合物（B），20重量％〜94重量％丙烯酸酯和1重量％至40重量％的含有甲代烯丙基磺酸或其金属盐的磺酸单体或其胺盐，其中聚合物（A）和聚合物（B）的总量）为100重量份。这样，得到染色后的显色性良好且染色后的收缩率高的改性聚丙烯腈系收缩性纤维。

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