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51. 发明申请

US20050067903A1 Outer rotor type hybrid stepping motor 有权
标题翻译：外转子式混合式步进电机
公开(公告)号：US20050067903A1
公开(公告)日：2005-03-31
申请号：US10921115
申请日：2004-08-19
申请人： Yuji Enomoto , Kenji Miyata , Yasuaki Motegi , Shoji Ohiwa
发明人： Yuji Enomoto , Kenji Miyata , Yasuaki Motegi , Shoji Ohiwa
IPC分类号： H02K37/06 , H02K37/18 , H02K37/00
CPC分类号： H02K37/18
摘要： In an outer rotor type hybrid stepping motor, when assuming that a teeth pitch is τ and a tooth width is Tw (tooth width ratio is Tw/τ) and in case of Tw/τ=0.3, the maximum torque can be obtained when a gap average magnetic flux density Bg is 1.6-1.8T, which is determined by dividing a total magnetic flux amount calculated from residual magnetic flux density Br of a magnet and surface area A of the magnet with small teeth surface area At of a rotor. Since the small teeth surface area At can be expressed by a product of the small tooth width Tw, number of small teeth Nr and a lamination thickness L, an optimum lamination thickness can be determined with only one solution. Further, in case of different teeth width ratios, the following gap magnetic flux densities Bg assume optimum values, in that when Tw/τ=0.35, 1.4-1.5T, when Tw/τ=0.4, 1.2-1.4T, when Tw/τ=0.45, 1.0-1.2T are set. When assuming that a cross sectional area in the axial direction of the magnet is A, a gap portion diameter is D, the lamination thickness of the stator core in the axial direction is L and a residual magnetic flux density of the magnet is Br, the lamination thickness in the axial direction L and the residual magnetic flux density Br is determined according to the following equation under a condition that a coefficient k in the following equation is kept in a range of 0.56-0.66(1/T) D×L/A=k×Br [k=1/(π×Bg×Tw/τ)]. Whereby, an outer rotor type hybrid stepping motor which uses new indexes for optimum design parameters of the motor and which realizes size reduction, a high output and a high resolution is provided.
摘要翻译：在外转子型混合式步进电动机中，当假设齿距为τ，齿宽为Tw（齿宽比为Tw / tau）时，在Tw /τ= 0.3的情况下，当a 间隙平均磁通密度Bg为1.6-1.8T，其通过将由磁体的残留磁通密度Br计算出的总磁通量除以磁体的表面积A与转子的小齿表面积At来确定。由于小齿表面积At可以由小齿宽Tw，小齿数Nr和层叠厚度L的乘积表示，所以可以仅用一个解决方案来确定最佳层压厚度。此外，在不同齿宽比的情况下，以下间隙磁通密度Bg呈现最佳值，因为当Tw /τ= 0.35,1.4-1.5T时，当Tw /τ= 0.4,1.2-1.4T时，当Tw / tau = 0.45,1.0-1.2T。当假设磁体轴向的横截面积为A时，间隙部分直径为D，定子芯在轴向上的层压厚度为L，磁体的剩余磁通密度为Br，在以下等式中的系数k保持在0.56-0.66（1 / T）的范围内的条件下，根据下式确定轴向方向L和剩余磁通密度Br的层叠厚度DxL / A = kxBr [k = 1 /（pixBgxTw / tau）]。由此，提供了一种外转子型混合式步进电动机，其使用新的指标来实现电动机的最佳设计参数，并实现了尺寸减小，高输出和高分辨率。

52. 发明授权

US06731862B1 Video image edit device 失效
标题翻译：视频图像编辑设备
公开(公告)号：US06731862B1
公开(公告)日：2004-05-04
申请号：US09692142
申请日：2000-10-20
申请人： Sunao Kawai , Kenji Miyata , Ryuji Yamada , Hideaki Teshima , Kazuma Aoki , Norihisa Fujii , Yoshihiko Horibe
发明人： Sunao Kawai , Kenji Miyata , Ryuji Yamada , Hideaki Teshima , Kazuma Aoki , Norihisa Fujii , Yoshihiko Horibe
IPC分类号： H04N591
CPC分类号： H04N5/765 , G11B27/032 , G11B27/034 , G11B27/11 , G11B27/28 , G11B2220/2562 , G11B2220/65 , H04N5/775 , H04N5/78263
摘要： A video image edit device for editing video image contents recorded on a video tape. The video tape is rewound to its leading end and a start point time code and a maximum video image content period are stored in a RAM. Then, a video reproduction is started and a time code and time information for a video image content are retrieved. A difference between the present time and a precedent time is compared with a predetermined period to detect discontinuity of the video image content. If discontinuity cannot be detected, judgment is made as to whether or not a difference between the present time code and a start point time code exceeds the maximum video image content period to determine a subdivision point. If discontinuity is detected, or if the difference exceeds the maximum video image content period, a present end point time code and next start point time code are stored for again detecting the discontinuity or judging the next subdivision point.
摘要翻译：一种用于编辑记录在录像带上的视频图像内容的视频图像编辑装置。视频磁带倒转到其前端，起始点时间码和最大视频图像内容周期存储在RAM中。然后，开始视频再现，并且检索视频图像内容的时间码和时间信息。将当前时间和先前时间之间的差与预定时间进行比较，以检测视频图像内容的不连续性。如果不能检测到不连续性，则判定当前时间码与起点时间码之间的差是否超过最大视频内容周期以确定细分点。如果检测到不连续性，或者如果差异超过最大视频内容周期，则存储当前终点时间码和下一个开始时间码，以再次检测不连续或判断下一个细分点。

53. 发明授权

US06559637B2 Non-contact rotational position sensor and throttle valve assembly including non-contact rotational position sensor 有权
公开(公告)号：US06559637B2
公开(公告)日：2003-05-06
申请号：US09820327
申请日：2001-03-29
申请人： Kenji Miyata , Satoshi Shimada , Fumio Tajima , Toshifumi Usui , Masanori Kubota
发明人： Kenji Miyata , Satoshi Shimada , Fumio Tajima , Toshifumi Usui , Masanori Kubota
IPC分类号： G01B714
CPC分类号： G01D5/145
摘要： A non-contact sensor for sensing a rotational position of a rotating object is provided. A ring-shaped permanent magnet magnetized in the axial direction is sandwiched between two pairs of magnetic plates from above and below. Two pairs of upper and lower protruded magnetic substance portions are provided between the upper and lower magnetic plates at opposite outer ends thereof. Magnetic sensitive devices are inserted in air gaps between the two pairs of upper and lower protruded magnetic substance portions. A magnetic flux generated from the ring-shaped permanent magnet is substantially concentrated to the protruded magnetic substance portions and passes the magnetic sensitive devices. The amount of magnetic flux passing each magnetic sensitive device is substantially proportional to the rotational angle of the ring-shaped permanent magnet. The rotational position of the ring-shaped permanent magnet and hence the rotational position of a rotating shaft supporting the ring-shaped permanent magnet can be sensed in a non-contact manner as a signal output from the magnetic sensitive device. Since the magnetic flux is effectively concentrated to positions where magnetic sensitive devices are attached, a non-contact rotational position sensor having high accuracy and high sensitivity can be obtained.

54. 发明授权

US5363008A Circular accelerator and method and apparatus for extracting charged-particle beam in circular accelerator 失效
标题翻译：圆形加速器和循环加速器中带电粒子束提取的方法和装置
公开(公告)号：US5363008A
公开(公告)日：1994-11-08
申请号：US958161
申请日：1992-10-08
申请人： Kazuo Hiramoto , Junichi Hirota , Masatsugu Nishi , Hiroyuki Watanabe , Kenji Miyata
发明人： Kazuo Hiramoto , Junichi Hirota , Masatsugu Nishi , Hiroyuki Watanabe , Kenji Miyata
IPC分类号： H05H7/10 , H05H13/00
CPC分类号： H05H7/10 , H05H13/00
摘要： A circular accelerator for extracting a charged-particle beam is arranged to increase displacement of the beam by the effect of the betatron oscillation resonance and increase the betatron oscillation amplitude of the particles, which have initially betatron oscillation within the stability limit for the resonance, to exceed the stability limit thereby extracting the particles exceeding the stability limit of the resonance.
摘要翻译：用于提取带电粒子束的圆形加速器被布置成通过贝塔酮振荡共振的作用来增加光束的位移，并且将具有初始贝塔振荡的贝塔振荡振荡的贝塔振荡振幅提高到谐振的稳定极限内，超过稳定极限，从而提取超过谐振稳定极限的颗粒。

55. 发明授权

US4746961A Field effect transistor 失效
标题翻译：场效应晶体管
公开(公告)号：US4746961A
公开(公告)日：1988-05-24
申请号：US59785
申请日：1987-06-08
申请人： Nobutake Konishi , Kenji Miyata , Yoshikazu Hosokawa , Takaya Suzuki , Akio Mimura
发明人： Nobutake Konishi , Kenji Miyata , Yoshikazu Hosokawa , Takaya Suzuki , Akio Mimura
IPC分类号： H01L27/12 , G02F1/1368 , H01L29/08 , H01L29/78 , H01L29/786 , H01L29/161 , H01L29/12
CPC分类号： G02F1/1368 , H01L29/0847 , H01L29/78621 , H01L2029/7863
摘要： This invention relates to the structure of a field effect transistor, which is suitable for liquid crystal display of an active matrix scheme and there is disclosed a new structure for the field effect transistor, in which at least one of the source region and the drain region is of multi-layered structure, in which high impurity concentration portions and low impurity concentration portions are alternately superposed on each other.
摘要翻译：本发明涉及适用于有源矩阵方案的液晶显示的场效应晶体管的结构，并且公开了一种用于场效应晶体管的新结构，其中源区和漏区中的至少一个是多层结构，其中高杂质浓度部分和低杂质浓度部分彼此交替重叠。

56. 发明授权

US4354121A Field controlled thyristor control circuit with additional FCT in reverse bias circuit 失效
标题翻译：具有反向偏置电路中附加FCT的场控晶闸管控制电路
公开(公告)号：US4354121A
公开(公告)日：1982-10-12
申请号：US284794
申请日：1981-07-10
申请人： Yoshio Terasawa , Kenji Miyata , Saburo Oikawa , Susumu Murakami , Masahiro Okamura , Takuzo Ogawa
发明人： Yoshio Terasawa , Kenji Miyata , Saburo Oikawa , Susumu Murakami , Masahiro Okamura , Takuzo Ogawa
IPC分类号： H01L27/08 , H01L29/739 , H02M1/08 , H03K17/04 , H03K17/12 , H03K17/72 , H03K17/73 , H03K17/60
CPC分类号： H01L29/7392 , H01L27/0817 , H02M1/08 , H03K17/0406 , H03K17/125 , H03K17/72
摘要： A switching control circuit includes a first field controlled thyristor having a gate and a cathode between which a backward bias voltage source and a second field controlled thyristor are connected in series. Conduction of the second field controlled thyristor is controlled by controlling a voltage applied across the gate and the cathode, thereby to control conduction of the first field controlled thyristor. A large load current can be positively and safely turned on and off by a relatively small control current or voltage.
摘要翻译：开关控制电路包括具有栅极和阴极的第一场控制晶闸管，在其间串联连接反向偏置电压源和第二场控制晶闸管。通过控制施加在栅极和阴极两端的电压来控制第二场控晶闸管的导通，从而控制第一场控制晶闸管的导通。通过相对较小的控制电流或电压可以正确安全地打开和关闭大负载电流。

57. 发明授权

US4258377A Lateral field controlled thyristor 失效
标题翻译：横向场控晶闸管
公开(公告)号：US4258377A
公开(公告)日：1981-03-24
申请号：US19567
申请日：1979-03-12
申请人： Kenji Miyata , Tatsuya Kamei , Masahiro Okamura
发明人： Kenji Miyata , Tatsuya Kamei , Masahiro Okamura
IPC分类号： H01L29/10 , H01L29/74 , H01L29/744
CPC分类号： H01L29/102 , H01L29/7436 , H01L29/744
摘要： An improvement in a semiconductor switching device is disclosed which comprises a semiconductor substrate of a first conductivity type, an anode region of a second conductivity type formed in the semiconductor substrate adjacent to a major surface thereof, a gate region of the second conductivity type formed a distance from the anode region, and a cathode region of the first conductivity type formed in the gate region and having a higher impurity concentration than the semiconductor substrate. A channel region is formed immediately below the cathode region thereby to directly contact the cathode region to the semiconductor substrate. A current path extending from the anode region to the cathode region through the semiconductor substrate is interrupted by a depletion layer produced in the vicinity of the channel region upon application of a reverse bias across a pn-junction formed between the gate region and the cathode region. When no reverse bias voltage is applied, the anode region, the semiconductor substrate and the gate region cooperate to function as a thyristor. The semiconductor switching device has a high dv/dt capability and is easily implemented in integrated circuits.
摘要翻译：公开了一种半导体开关器件的改进，其包括第一导电类型的半导体衬底，形成在与其主表面相邻的半导体衬底中的第二导电类型的阳极区域，第二导电类型的栅极区形成为与阳极区域的距离以及形成在栅极区域中并且具有比半导体衬底更高的杂质浓度的第一导电类型的阴极区域。沟道区形成在阴极区的正下方，从而直接接触阴极区到半导体衬底。通过在栅极区域和阴极区域之间形成的pn结上施加反向偏压，在由沟道区域附近产生的耗尽层将中断通过半导体衬底从阳极区延伸到阴极区的电流路径。当不施加反向偏置电压时，阳极区域，半导体衬底和栅极区域配合作为晶闸管。半导体开关器件具有高的dv / dt能力，并且易于在集成电路中实现。

58. 发明授权

US4164436A Process for preparation of semiconductor devices utilizing a two-step polycrystalline deposition technique to form a diffusion source 失效
标题翻译：使用两步多晶沉积技术制备半导体器件以形成扩散源的方法
公开(公告)号：US4164436A
公开(公告)日：1979-08-14
申请号：US925792
申请日：1978-07-18
申请人： Mitsuru Ura , Kenji Miyata , Takaya Suzuki , Takuzo Ogawa
发明人： Mitsuru Ura , Kenji Miyata , Takaya Suzuki , Takuzo Ogawa
IPC分类号： H01L21/22 , H01L21/205 , H01L21/225 , H01L29/04 , H01L29/08 , H01L29/866
CPC分类号： H01L29/866 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/2257 , H01L29/04 , H01L29/0834 , Y10S148/122 , Y10S438/983
摘要： A semiconductor substrate having a single crystal semiconductor layer of one conductivity type exposed to the surface thereof is maintained at a temperature lower than the temperature at which the semiconductors is precipitated from the gas phase. In this state, a gas of a starting material of a semiconductor, a gas containing impurities capable of forming a semiconductor of the other conductivity type and a carrier gas therefore are fed onto the semiconductor substrate. Then, the semiconductor substrate is heated to form an amorphous or polycrystalline semiconductor layer of the other conductivity type on the semiconductor substrate. Simultaneously, the impurities of the other conductivity type are diffused from the amorphous or polycrystal semiconductor layer into the substrate which has a single crystal semiconductor layer of one conductivity type, to form a single crystal semiconductor layer having a p-n junction just below the amorphous or polycrystal semiconductor layer between the amorphous or polycrystalline semiconductor layer and the single crystal semiconductor layer of one conductivity type.In a p-n junction to be formed according to this process, the distribution of the concentration of impurities can be controlled precisely, and the step-like distribution of the concentration of impurities can be attained very well.
摘要翻译：具有暴露于其表面的一种导电类型的单晶半导体层的半导体衬底保持在比从气相中半导体析出的温度低的温度。在这种状态下，半导体衬底上的半导体原料气体，含能够形成其它导电类型的半导体的气体和载气的气体被馈送到半导体衬底上。然后，半导体衬底被加热以在半导体衬底上形成另一导电类型的非晶或多晶半导体层。同时，其他导电类型的杂质从非晶或多晶半导体层扩散到具有一种导电类型的单晶半导体层的衬底中，以形成具有刚好在无定形或多晶的下面的pn结的单晶半导体层非晶或多晶半导体层与一种导电类型的单晶半导体层之间的半导体层。

59. 发明授权

US08407881B2 Process of manufacturing a stator 有权
标题翻译：制造定子的工艺
公开(公告)号：US08407881B2
公开(公告)日：2013-04-02
申请号：US12698712
申请日：2010-02-02
申请人： Takashi Naganawa , Kenji Miyata , Takashi Ishigami
发明人： Takashi Naganawa , Kenji Miyata , Takashi Ishigami
IPC分类号： H02K15/00
CPC分类号： H02K15/066 , H02K3/28 , Y10T29/49009 , Y10T29/49012 , Y10T29/49071 , Y10T29/49073 , Y10T29/53143 , Y10T29/53157
摘要： An object of the present invention is to provide a small, high-power rotating electrical machine by suitably forming a distributed winding coil such that two stator magnetic poles each formed of in-phase coil turns are arranged within an electric angle of 360 degrees formed by magnetic poles of the rotor. The present invention provides a method for manufacturing a stator, the method including a first step of placing a distributed winding coil 207 composed of a wire wound around a reel 210, as a whole, inside a stator core 202, and a second step of moving an insertion blade 213 so as to spread the distributed winding coil 207 in the radial direction of the stator core 202, thus inserting the distributed winding coil 207 into a stator core slot 206.
摘要翻译：本发明的目的是通过适当地形成分布式绕组线圈来提供小型高功率旋转电机，使得两个由同相线圈匝构成的定子磁极排列在由360度形成的360度的电角度内转子的磁极。本发明提供一种定子的制造方法，该方法包括：第一步骤，将由卷绕在卷轴210上的线组成的分布绕组线圈207整体放置在定子铁心202的内部，以及第二步骤插入刀片213，以便沿着定子铁心202的径向扩展分布绕组线圈207，从而将分布式绕组线圈207插入定子铁心槽206中。

60. 发明申请

US20120188730A1 INSULATING SHEET, CIRCUIT BOARD, AND PROCESS FOR PRODUCTION OF INSULATING SHEET 有权
标题翻译：绝缘片，电路板和绝缘片生产工艺
公开(公告)号：US20120188730A1
公开(公告)日：2012-07-26
申请号：US13498784
申请日：2010-09-13
申请人： Kenji Miyata , Toshitaka Yamagata
发明人： Kenji Miyata , Toshitaka Yamagata
IPC分类号： H05K1/18 , H05K1/02 , C08L63/00 , C08K3/38 , B32B37/14 , B32B38/04
CPC分类号： H05K1/0373 , C08G59/4223 , C08G59/621 , C08L63/00 , H05K1/0326 , H05K2201/0209 , Y10T156/1043 , Y10T156/1052
摘要： An object of the present invention is to provide an insulating sheet superior in heat dissipation efficiency, heat resistance, insulation efficiency and moldability. Provided is a sheet-shaped insulating sheet of a resin composition containing an epoxy resin, a curing agent and an inorganic filler, wherein one or both of the epoxy resin and the curing agent have a naphthalene structure, the inorganic filler contains hexagonal boron nitride, and the inorganic filler is contained in an amount of 70 to 85 vol % in the entire resin composition. It is possible to increase the filling efficiency of an inorganic filler in the insulating sheet by using an epoxy resin and/or a curing agent having a naphthalene structure, which are favorably compatible with the hexagonal boron nitride contained in the inorganic filler.
摘要翻译：本发明的目的是提供一种绝热片，其散热效率，耐热性，绝缘效率和成型性优异。提供一种含有环氧树脂，固化剂和无机填料的树脂组合物的片状绝缘片，其中一种或两种环氧树脂和固化剂具有萘结构，无机填料含有六方氮化硼，并且在整个树脂组合物中，无机填料的含量为70〜85体积％。可以通过使用具有萘结构的环氧树脂和/或固化剂，与无机填料中所含的六方氮化硼有利地相容，来提高绝缘片中无机填料的填充效率。

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