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    • 55. 发明申请
    • DISPLAY DEVICE
    • 显示设备
    • US20100007650A1
    • 2010-01-14
    • US12489981
    • 2009-06-23
    • Hee-Jin CHOISang-Soo KimDong-Won ParkPo-Yun ParkBong-Hyun YouDong-Gyun Ra
    • Hee-Jin CHOISang-Soo KimDong-Won ParkPo-Yun ParkBong-Hyun YouDong-Gyun Ra
    • G06F3/038G06K9/32G06K9/48
    • G09G3/20G09G2320/106G09G2340/0435
    • A display device includes an image signal processing unit to output a high-speed image signal with the aid of an image interpolation unit outputting a low-speed image signal. The display device includes an image signal processing unit to receive a primitive image signal having a first frequency and to output a 4× image signal having a second frequency. The second frequency is four times the first frequency. The display device includes a display panel displaying an image corresponding to the 4× image signal. The primitive image signal includes an (n−1)-th frame (where n is a natural number) and an n-th frame. The image signal processing unit includes a first image interpolation unit and second image interpolation unit, which receive the (n−1)-th frame and the n-th frame and output a 2× image signal including at least one interpolated frame.
    • 显示装置包括:图像信号处理单元,借助于输出低速图像信号的图像插值单元输出高速图像信号。 显示装置包括图像信号处理单元,用于接收具有第一频率的原始图像信号并输出​​具有第二频率的4×图像信号。 第二个频率是第一个频率的四倍。 显示装置包括显示与4x图像信号对应的图像的显示面板。 原始图像信号包括第(n-1)个帧(其中n是自然数)和第n帧。 图像信号处理单元包括第一图像插值单元和第二图像插值单元,其接收第(n-1)个帧和第n帧并输出包括至少一个内插帧的2x图像信号。
    • 60. 发明授权
    • Thin film transistor array panel and liquid crystal display including the panel
    • 薄膜晶体管阵列面板和液晶显示器包括面板
    • US07294854B2
    • 2007-11-13
    • US10525039
    • 2002-09-18
    • Sang-Soo KimDong-Gyu Kim
    • Sang-Soo KimDong-Gyu Kim
    • H01L29/04H01L31/036H01L31/0376H01L31/20
    • H01L27/124G02F1/136213G02F1/136286H01L27/1255
    • A gate wire including a gate line extending in a transverse direction and a gate electrode connected to the gate line is form on an insulating substrate. A storage capacitor wire including a storage capacitor electrode line extending in the transverse direction and a storage electrode connected to the storage capacitor electrode line and located at the edges of a pixel area is formed. A semiconductor layer is formed on a gate insulating film covering the gate wire and the storage capacitor wire. A data wire is formed on the gate insulating film or the semiconductor layer and includes a data line intersecting the gate line to define the pixel area, a source electrode connected to the data line and located on the semiconductor layer, a drain electrode formed on the semiconductor layer and located opposite the source electrode with respect to the gate electrode, and a first storage capacitor conductor overlapping the storage capacitor electrode via the gate insulating film to form a storage capacitor. A pixel electrode electrically connected to the drain electrode and the first storage capacitor conductor is formed on the protective layer covering the data wire.
    • 包括在横向延伸的栅极线和连接到栅极线的栅电极的栅极线形成在绝缘基板上。 形成包括在横向延伸的辅助电容电极线和与辅助电容电极线连接并位于像素区域的边缘的存储电极的保持电容配线。 在覆盖栅极线和保持电容配线的栅极绝缘膜上形成半导体层。 数据线形成在栅极绝缘膜或半导体层上,并且包括与栅极线相交以限定像素区域的数据线,连接到数据线并位于半导体层上的源电极,形成在栅极绝缘膜上的漏电极 半导体层,并且相对于栅极位于与源电极相对的位置;以及第一存储电容器导体,经由栅极绝缘膜与存储电容电极重叠,形成存储电容。 电连接到漏电极和第一辅助电容导体的像素电极形成在覆盖数据线的保护层上。