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51. 发明授权

US07226725B2 Negative resist composition comprising base polymer having epoxy ring and si-containing crosslinker and patterning method for semiconductor device using the same 失效
标题翻译：包含具有环氧环的基础聚合物和含Si的交联剂的负型抗蚀剂组合物和使用其的半导体器件的图案化方法
公开(公告)号：US07226725B2
公开(公告)日：2007-06-05
申请号：US11434536
申请日：2006-05-15
申请人： Sang-Jun Choi
发明人： Sang-Jun Choi
IPC分类号： G03F7/40
CPC分类号： G03F7/0757 , G03F7/038 , G03F7/0385 , G03F7/0755 , Y10S430/115 , Y10S430/122 , Y10S430/126
摘要： A negative resist composition and a patterning method for semiconductor devices using the composition are provided. In one aspect, a negative resist composition comprises an alkali-soluble base polymer having an epoxy ring substituent, a silicon-containing crosslinker having multiple hydroxy groups, and a photoacid generator. In another aspect, a patterning method includes using the negative resist composition in a bi-layer resist process to form fine patterns.
摘要翻译：提供了使用该组合物的半导体器件的负型抗蚀剂组合物和图案化方法。一方面，负性抗蚀剂组合物包含具有环氧环取代基的碱溶性基础聚合物，具有多个羟基的含硅交联剂和光酸产生剂。在另一方面，图案化方法包括在双层抗蚀剂工艺中使用负性抗蚀剂组合物以形成精细图案。

52. 发明申请

US20070048672A1 Barrier coating compositions containing silicon and methods of forming photoresist patterns using the same 失效
标题翻译：包含硅的阻挡涂层组合物和使用其形成光刻胶图案的方法
公开(公告)号：US20070048672A1
公开(公告)日：2007-03-01
申请号：US11447932
申请日：2006-06-07
申请人： Sang-Jun Choi , Mitsuhiro Hata , Han-Ku Cho
发明人： Sang-Jun Choi , Mitsuhiro Hata , Han-Ku Cho
IPC分类号： G03C5/00
CPC分类号： G03F7/11 , G03F7/0758 , G03F7/2041
摘要： Provided are example embodiments of the invention including a range of polymer structures suitable for incorporation in barrier compositions for use, for example, in immersion photolithography in combination with a suitable solvent or solvent system. These polymers exhibit a weight average molecular weight (Mw) of 5,000 to 200,000 daltons and may be generally represented by formula I: wherein the expressions (1+m+n)=1; 0.1≦(1/(1+m+n))≦0.7; 0.3≦(m/(1+m+n))≦0.9; and 0.0≦(n/(1+m+n))≦0.6 are satisfied; R1, R2 and R3 are C1 to C5 alkyl, C1 to C5 alkoxy and hydroxyl groups; and Z represents an alkene that includes at least one hydrophilic group. Barrier coating compositions will include an organic solvent or solvent system selected from C3 to C10 alcohol-based organic solvents, C4 to C12 alkane-based organic solvents and mixtures thereof.
摘要翻译：提供本发明的示例性实施方案，其包括适用于结合到阻挡组合物中的聚合物结构的范围，用于例如浸渍光刻法与合适的溶剂或溶剂体系的组合。这些聚合物的重均分子量（Mw）为5000〜200,000道尔顿，通常可以由式I表示：式（1 + m + n）= 1; 0.1 <=（1 /（1 + m + n））<= 0.7; 0.3 <=（m /（1 + m + n））<= 0.9; 并且满足0.0 <=（n /（1 + m + n））<= 0.6; R 1，R 2和R 3均为C 1至C 5烷基 C 1 -C 5烷氧基和羟基; Z表示包含至少一个亲水基团的烯烃。阻挡涂层组合物将包括选自C 3〜C 10醇基有机溶剂，C 4〜C 6烷基的有机溶剂或溶剂体系，基于烷烃的有机溶剂及其混合物。

53. 发明授权

US07105271B2 Negative resist composition comprising hydroxy-substituted base polymer and si-containing crosslinker having epoxy ring and a method for patterning semiconductor devices using the same 有权
公开(公告)号：US07105271B2
公开(公告)日：2006-09-12
申请号：US10400097
申请日：2003-03-26
申请人： Sang-Jun Choi
发明人： Sang-Jun Choi
IPC分类号： G03F7/075 , G03F7/40
CPC分类号： G03F7/095 , G03F7/0755 , G03F7/40 , Y10S430/106 , Y10S430/111 , Y10S430/115 , Y10S430/122 , Y10S430/126 , Y10S430/146
摘要： A negative resist composition and a method for patterning semiconductor devices using the composition are provided. The negative resist composition contains an alkali-soluble hydroxy-substituted base polymer, a silicon-containing crosslinker having an epoxy ring, and a photoacid generator. In the method for patterning semiconductor devices, fine patterns are formed according to a bi-layer resist process using the negative resist composition.

54. 发明申请

US20060189148A1 Transistor having a metal nitride layer pattern, etchant and methods of forming the same 有权
标题翻译：具有金属氮化物层图案的晶体管，蚀刻剂及其形成方法
公开(公告)号：US20060189148A1
公开(公告)日：2006-08-24
申请号：US11358082
申请日：2006-02-22
申请人： Sang-Yong Kim , Ji-Hoon Cha , Woo-Gwan Shim , Chang-Ki Hong , Sang-Jun Choi
发明人： Sang-Yong Kim , Ji-Hoon Cha , Woo-Gwan Shim , Chang-Ki Hong , Sang-Jun Choi
IPC分类号： H01L21/302 , C09K13/00 , H01L29/94
CPC分类号： H01L21/32134 , C09K13/02 , H01L21/28088 , H01L29/4966 , H01L29/517 , H01L29/6659 , H01L29/7833
摘要： A transistor having a metal nitride layer pattern, etchant and methods of forming the same is provided. A gate insulating layer and/or a metal nitride layer may be formed on a semiconductor substrate. A mask layer may be formed on the metal nitride layer. Using the mask layer as an etching mask, an etching process may be performed on the metal nitride layer, forming the metal nitride layer pattern. An etchant, which may have an oxidizing agent, a chelate agent and/or a pH adjusting mixture, may perform the etching. The methods may reduce etching damage to a gate insulating layer under the metal nitride layer pattern during the formation of a transistor.
摘要翻译：提供具有金属氮化物层图案的晶体管，蚀刻剂及其形成方法。可以在半导体衬底上形成栅极绝缘层和/或金属氮化物层。掩模层可以形成在金属氮化物层上。使用掩模层作为蚀刻掩模，可以对金属氮化物层进行蚀刻处理，形成金属氮化物层图案。可以具有氧化剂，螯合剂和/或pH调节混合物的蚀刻剂可以进行蚀刻。在形成晶体管期间，这些方法可以减少金属氮化物层图案下的栅极绝缘层的蚀刻损伤。

55. 发明申请

US20060183297A1 Etching solution for removal of oxide film, method for preparing the same, and method of fabricating semiconductor device 审中-公开
标题翻译：用于去除氧化膜的蚀刻溶液，其制备方法以及制造半导体器件的方法
公开(公告)号：US20060183297A1
公开(公告)日：2006-08-17
申请号：US11130030
申请日：2005-05-16
申请人： Chang-Sup Mun , Hyung-Ho Ko , Woo-Gwan Shim , Chang-Ki Hong , Sang-Jun Choi
发明人： Chang-Sup Mun , Hyung-Ho Ko , Woo-Gwan Shim , Chang-Ki Hong , Sang-Jun Choi
IPC分类号： H01L21/30 , H01L21/302 , H01L21/46
CPC分类号： H01L21/31111 , H01L21/76224 , H01L28/40
摘要： Provided are an anionic surfactant-containing etching solution for removal of an oxide film, preparation methods thereof, and methods of fabricating a semiconductor device using the etching solution. The etching solution includes a hydrofluoric acid (HF), deionized water, and an anionic surfactant. The anionic surfactant is a compound in which an anime salt is added as a counter ion, as represented by R1—OSO3−HA+, R1—CO2−HA+, R1—PO42−(HA+)2, (R1)2—PO4−HA+, or R1—SO3−HA+ where R1 is a straight or branched hydrocarbon group of C4 to C22 and A is ammonia or amine. The etching solution provides a high etching selectivity ratio of an oxide film to a nitride film or a polysilicon film. Therefore, in a semiconductor device fabrication process such as a STI device isolation process or a capacitor formation process, when an oxide film is exposed together with a nitride film or a polysilicon film, the etching solution can be efficiently used in selectively removing only the oxide film.
摘要翻译：提供了一种用于去除氧化膜的含阴离子表面活性剂的蚀刻溶液，其制备方法以及使用该蚀刻溶液制造半导体器件的方法。蚀刻溶液包括氢氟酸（HF），去离子水和阴离子表面活性剂。阴离子表面活性剂是其中加入作为抗衡离子的动物盐的化合物，如R 1〜N 3 O 3 - R 1，R 2，R 1，R 1，...，R 1，（R 1）2 - - - - - （4）其中R 1，R 2， / SUB>）2 + 或其中R 1是C 4的直链或支链烃基，其中R 1是直链或支链C 1 -C 4烷基， C 22和A是氨或胺。蚀刻溶液提供氧化膜与氮化物膜或多晶硅膜的高蚀刻选择性比。因此，在诸如STI器件隔离处理或电容器形成工艺的半导体器件制造工艺中，当氧化物膜与氮化物膜或多晶硅膜一起暴露时，可以有效地使用蚀刻溶液来仅选择性地除去氧化物电影。

56. 发明申请

US20050239672A1 Cleaning solution of silicon germanium layer and cleaning method using the same 有权
标题翻译：硅锗层的清洗液和使用其的清洗方法
公开(公告)号：US20050239672A1
公开(公告)日：2005-10-27
申请号：US11104829
申请日：2005-04-13
申请人： Chang-Sup Mun , Doo-Won Kwon , Hyung-Ho Ko , Chang-Ki Hong , Sang-Jun Choi
发明人： Chang-Sup Mun , Doo-Won Kwon , Hyung-Ho Ko , Chang-Ki Hong , Sang-Jun Choi
IPC分类号： H01L21/304 , B08B3/00 , C11D1/00 , C11D1/66 , C11D1/72 , C11D3/02 , C11D11/00 , C30B1/00 , H01L21/306 , H01L21/308
CPC分类号： H01L21/02052 , C11D1/66 , C11D1/72 , C11D3/044 , C11D11/0047 , H01L21/3081 , Y10S134/902
摘要： Disclosed are a cleaning solution for preventing damage of a silicon germanium layer when cleaning a semiconductor device including the silicon germanium layer and a cleaning method using the same. The cleaning solution of a silicon germanium layer includes from about 0.01 to about 2.5 percent by weight of a non-ionic surfactant with respect to 100 percent by weight of the cleaning solution, about 0.05 to about 5.0 percent by weight of an alkaline compound with respect to the cleaning solution and a remaining amount of pure water. The damage to an exposed silicon germanium layer can be prevented when cleaning a silicon substrate having a silicon germanium layer. Impurities present on the surface portion of the silicon germanium layer can be effectively removed.
摘要翻译：公开了一种用于在清洁包括硅锗层的半导体器件时的防止硅锗层损坏的清洁溶液以及使用其的清洁方法。硅锗层的清洁溶液包括约0.01至约2.5重量％的非离子表面活性剂相对于100重量％的清洁溶液，约0.05至约5.0重量％的碱性化合物，相对于到清洁溶液和剩余量的纯水。当清洁具有硅锗层的硅衬底时，可以防止暴露的硅锗层的损坏。可以有效地除去存在于硅锗层的表面部分上的杂质。

57. 发明申请

US20050170981A1 Cleaning composition and method of cleaning a semiconductor device using the same 有权
标题翻译：使用该半导体器件的清洁组合物和清洁半导体器件的方法
公开(公告)号：US20050170981A1
公开(公告)日：2005-08-04
申请号：US11038585
申请日：2005-01-19
申请人： Chang-Sup Mun , Chang-Ki Hong , Sang-Jun Choi , Woo-Sung Han
发明人： Chang-Sup Mun , Chang-Ki Hong , Sang-Jun Choi , Woo-Sung Han
IPC分类号： C11D1/12 , C11D1/14 , C11D3/00 , C11D3/20 , C11D3/34 , C11D11/00 , C11D1/00
CPC分类号： H01L21/02071 , C11D1/146 , C11D3/0073 , C11D3/2031 , C11D3/2055 , C11D3/3409 , C11D3/3427 , C11D11/0047
摘要： A cleaning composition comprises an alkali solution, pure water, and a surfactant represented by the following chemical formula: R1-OSO3—HA+ wherein R1 is one selected from a group consisting of a butyl group, an isobutyl group, an isooctyl group, a nonyl phenyl group, an octyl phenyl group, a decyl group, a tridecyl group, a lauryl group, a myristyl group, a cetyl group, a stearyl group, an oleyl group, a licenoleyl group and a behnyl group, and A is one selected from a group consisting of ammonia, ethanol amine, diethanol amine and triethanol amine.
摘要翻译：清洁组合物包含碱溶液，纯水和由以下化学式表示的表面活性剂：其中R 1是选自下列化学式的一种：由丁基，异丁基，异辛基，壬基苯基，辛基苯基，癸基，十三烷基，月桂基，肉豆蔻基，十六烷基，硬脂基，油基基团，丙烯酰基和苯丙基，A是选自氨，乙醇胺，二乙醇胺和三乙醇胺中的一种。

58. 发明申请

US20050074948A1 Method of manufacturing shallow trench isolation structure using HF vapor etching process 审中-公开
标题翻译：使用HF蒸汽蚀刻工艺制造浅沟槽隔离结构的方法
公开(公告)号：US20050074948A1
公开(公告)日：2005-04-07
申请号：US10949426
申请日：2004-09-24
申请人： Hyung-Ho Ko , Woo-Gwan Shim , Yu-Kyung Kim , Chang-Ki Hong , Sang-Jun Choi
发明人： Hyung-Ho Ko , Woo-Gwan Shim , Yu-Kyung Kim , Chang-Ki Hong , Sang-Jun Choi
IPC分类号： H01L21/762 , H01L21/76
CPC分类号： H01L21/76224
摘要： In a method of manufacturing a shallow trench isolation (STI) structure using a HF vapor etching process according to some embodiments of the invention, a trench is formed in a semiconductor substrate. A buffer layer and a first insulating layer, which fill the trench, are formed. A portion of the first insulating layer is removed by performing an etching process using HF vapor, thereby removing a void existing in the first insulating layer. A second insulating layer filling the trench is formed on the etched first insulating layer. Other embodiments of the invention are described and claimed.
摘要翻译：在根据本发明的一些实施例的使用HF蒸汽蚀刻工艺制造浅沟槽隔离（STI）结构的方法中，在半导体衬底中形成沟槽。形成填充沟槽的缓冲层和第一绝缘层。通过使用HF蒸气进行蚀刻处理来去除第一绝缘层的一部分，从而去除存在于第一绝缘层中的空隙。在蚀刻的第一绝缘层上形成填充沟槽的第二绝缘层。描述和要求保护本发明的其它实施例。

59. 发明授权

US08614113B2 Image sensor and method of fabricating the same 有权
标题翻译：图像传感器及其制造方法
公开(公告)号：US08614113B2
公开(公告)日：2013-12-24
申请号：US13239457
申请日：2011-09-22
申请人： Yu-Jin Ahn , Duck-Hyung Lee , Jong-Cheol Shin , Chang-Rok Moon , Sang-Jun Choi , Eun-Kyung Park
发明人： Yu-Jin Ahn , Duck-Hyung Lee , Jong-Cheol Shin , Chang-Rok Moon , Sang-Jun Choi , Eun-Kyung Park
IPC分类号： H01L21/00 , H01L27/146
CPC分类号： H01L27/14689 , H01L27/14609 , H01L27/1463
摘要： An image sensor and a method for fabricating the image sensor are provided. The method for fabricating the image sensor includes forming a first insulating layer on a semiconductor epitaxial layer having multiple pixel regions; patterning a portion of the semiconductor epitaxial layer and the first insulating layer in a boundary region between the pixel regions to form a trench; forming a buried insulating layer on the first insulating layer, filling the trench, the buried insulating layer having a planar top surface; forming a second insulating layer on the buried insulating layer; forming a first mask pattern on the second insulating layer, the first mask pattern defining an opening overlapping the trench; and performing an ion implantation process using the first mask pattern as an ion implantation mask to form a first type potential barrier region in a bottom of the trench.
摘要翻译：提供了一种用于制造图像传感器的图像传感器和方法。制造图像传感器的方法包括在具有多个像素区域的半导体外延层上形成第一绝缘层; 在像素区域之间的边界区域中构图半导体外延层和第一绝缘层的一部分以形成沟槽; 在所述第一绝缘层上形成掩埋绝缘层，填充所述沟槽，所述掩埋绝缘层具有平坦的顶表面; 在所述掩埋绝缘层上形成第二绝缘层; 在所述第二绝缘层上形成第一掩模图案，所述第一掩模图案限定与所述沟槽重叠的开口; 以及使用所述第一掩模图案作为离子注入掩模进行离子注入处理，以在所述沟槽的底部形成第一类型的势垒区域。

60. 发明申请

US20120241636A1 APPARATUS FOR MEASURING COMPOUND USING PHOTO-IONIZATION DETECTOR 审中-公开
标题翻译：用于测量使用光离子检测器的化合物的装置
公开(公告)号：US20120241636A1
公开(公告)日：2012-09-27
申请号：US13514595
申请日：2010-05-27
申请人： Jae-Kyoung Ahn , Sang-Jun Choi
发明人： Jae-Kyoung Ahn , Sang-Jun Choi
IPC分类号： G01T1/185
CPC分类号： G01N21/63 , G01N27/622
摘要： The present invention relates to an apparatus for measuring a compound using a photo-ionization detector. The apparatus comprises: an ultra violet (UV) lamp (10) which is filled with a krypton gas as an inert gas and emits UV light of 10.6 eV; a photo-ionization detector (PID) unit (100) which detects a compound (50) ionized by the UV lamp; a delay unit (200) which delays the compound (50) ionized through the PID unit so as to change the ionized compound into the original compound; and a collection unit (300) for collecting the compound (50) outputted through the delay unit. Accordingly, the PID unit is connected through the delay unit to the collection unit so that the compound which is quantitatively analyzed by the PID unit can be grasped in detail by the collection unit. In addition, the collection unit having only a qualitative analysis function is connected with the PID unit so that the concentration change of the compound which is qualitatively analyzed by the collection unit can be grasped in real time.
摘要翻译：本发明涉及一种使用光电离检测器测量化合物的装置。该装置包括：紫外线（UV）灯（10），其填充有氪气作为惰性气体并发射10.6eV的紫外光; 光电离检测器（PID）单元（100），其检测由所述UV灯电离的化合物（50）; 延迟单元（200），延迟通过PID单元离子化的化合物（50），以将离子化合物改变成原始化合物; 以及收集单元（300），用于收集通过延迟单元输出的化合物（50）。因此，PID单元通过延迟单元连接到收集单元，使得由PID单元定量分析的化合物可以被收集单元详细掌握。此外，仅具有定性分析功能的收集单元与PID单元连接，从而可以实时掌握由收集单元定性分析的化合物的浓度变化。

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