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51. 发明申请

US20090157573A1 System And Method For Grading Electricity Distribution Network Feeders Susceptible To Impending Failure 有权
标题翻译：对易发生故障的电力分配网络馈线进行分级的系统和方法
公开(公告)号：US20090157573A1
公开(公告)日：2009-06-18
申请号：US12178553
申请日：2008-07-23
申请人： Roger N. Anderson , Albert Boulanger , David L. Waltz , Phil Long , Arias Marta , Philip Gross , Hila Becker , Arthur Kressner , Mark Mastrocinque , Matthew Koenig , John A. Johnson
发明人： Roger N. Anderson , Albert Boulanger , David L. Waltz , Phil Long , Arias Marta , Philip Gross , Hila Becker , Arthur Kressner , Mark Mastrocinque , Matthew Koenig , John A. Johnson
IPC分类号： G06F15/18
CPC分类号： G06N99/005
摘要： A machine learning system creates failure-susceptibility rankings for feeder cables in a utility's electrical distribution system. The machine learning system employs martingale boosting algorithms and Support Vector Machine (SVM) algorithms to generate a feeder failure prediction model, which is trained on static and dynamic feeder attribute data. Feeders are dynamically ranked by failure susceptibility and the rankings displayed to utility operators and engineers so that they can proactively service the distribution system to prevent local power outages. The feeder rankings may be used to redirect power flows and to prioritize repairs. A feedback loop is established to evaluate the responses of the electrical distribution system to field actions taken to optimize preventive maintenance programs.
摘要翻译：机器学习系统为公用事业的配电系统中的馈线电缆创建故障敏感性排名。机器学习系统采用mart升级算法和支持向量机（SVM）算法，生成馈线故障预测模型，对静态和动态馈线属性数据进行了培训。馈线由故障敏感性和对公用事业运营商和工程师的排名进行动态排名，以便他们可以主动为服务分配系统，以防止局部停电。馈线排名可用于重定向电力流量并优先进行维修。建立了一个反馈回路，以评估配电系统对优化预防性维护计划所采取的现场行动的响应。

52. 发明授权

US06476362B1 Lamp array for thermal processing chamber 有权
标题翻译：用于热处理室的灯阵列
公开(公告)号：US06476362B1
公开(公告)日：2002-11-05
申请号：US09660565
申请日：2000-09-12
申请人： Thomas E. Deacon , Roger N. Anderson , David K. Carlson , Paul Comita
发明人： Thomas E. Deacon , Roger N. Anderson , David K. Carlson , Paul Comita
IPC分类号： F27B514
CPC分类号： H01L21/67115 , H05B3/0047
摘要： A lamp array for a thermal processing chamber. The lamp array includes a plurality of lamps arranged in a generally circular array. The plurality of lamps can be arranged in one or more concentric rings to form a generally circular array. Additional lamp arrays can be provided adjacent the circumference of the circular array or outermost concentric ring to provide a generally rectangular heating pattern. At least one row of lamps can be provided tangentially to the circular portion of the lamp array to provide preheating or postheating of process gases in the flow direction of a rectangular processing chamber.
摘要翻译：用于热处理室的灯阵列。灯阵列包括以大致圆形阵列布置的多个灯。多个灯可以布置在一个或多个同心环中以形成大致圆形的阵列。可以在圆形阵列或最外同心环的圆周附近设置附加的灯阵列，以提供大致矩形的加热图案。至少一排灯可以与灯阵列的圆形部分相切地提供，以在矩形处理室的流动方向上提供工艺气体的预加热或后加热。

53. 发明授权

US06436837B1 Domed wafer reactor vessel window with reduced stress at atmospheric and above atmospheric pressures 有权
标题翻译：圆顶晶圆反应堆容器窗口，其在大气压和高于大气压下的应力降低
公开(公告)号：US06436837B1
公开(公告)日：2002-08-20
申请号：US09426218
申请日：1999-10-22
申请人： Roger N. Anderson
发明人： Roger N. Anderson
IPC分类号： H01L21302
CPC分类号： C30B25/08 , C23C16/481
摘要： A thermal reactor having a wafer chamber for containing at least one semiconductor wafer during processing. The thermal reactor contains a quartz window having an inward bow defining a concave outside surface.
摘要翻译：一种具有在处理过程中包含至少一个半导体晶片的晶片室的热反应器。热反应堆包含具有限定凹面外表面的向内弓的石英窗。

54. 发明授权

US06406543B1 Infra-red transparent thermal reactor cover member 失效
标题翻译：红外透明热反应堆盖部件
公开(公告)号：US06406543B1
公开(公告)日：2002-06-18
申请号：US09122620
申请日：1998-07-23
申请人： Roger N. Anderson
发明人： Roger N. Anderson
IPC分类号： C23C1600
CPC分类号： H01L21/67115 , C23C16/481
摘要： A cover member for a semiconductor processing thermal reactor. The cover member has a central quartz window portion and an outer flange portion. The central window portion has either an inward bow defining a concave outside surface, or an outward bow defining a convex outside surface. The centerline of the central window portion has a radius of curvature which when extended through the flange portion divides the flange portion into an upper flange section and a lower flange section. The upper and lower flange portions having substantially equal masses.
摘要翻译：一种用于半导体加工热反应器的盖构件。盖构件具有中央石英窗部分和外凸缘部分。中央窗口部分具有限定凹面外表面的向内弓或限定凸外表面的向外弓。中央窗口部分的中心线具有曲率半径，其在延伸穿过凸缘部分时将凸缘部分分成上凸缘部分和下凸缘部分。上下凸缘部分具有基本相等的质量。

55. 发明授权

US06399510B1 Bi-directional processing chamber and method for bi-directional processing of semiconductor substrates 有权
标题翻译：双向处理室和半导体基板的双向处理方法
公开(公告)号：US06399510B1
公开(公告)日：2002-06-04
申请号：US09660001
申请日：2000-09-12
申请人： Norma B. Riley , Roger N. Anderson , Grant D. Imper , Paul Comita
发明人： Norma B. Riley , Roger N. Anderson , Grant D. Imper , Paul Comita
IPC分类号： H01L2100
CPC分类号： C23C16/45502 , C23C16/455 , H01L21/67069
摘要： A semiconductor substrate processing chamber provides a bi-directional process gas flow for deposition or etching processes. The bi-directional gas flow provides uniformity of deposition layer thickness or uniformity of etching without the need to rotate the substrate. Junctions are provided at opposite ends of a processing chamber. Inlet and outlet ports are provided on each junction. Inlet and outlet ports on opposite junctions cooperate to provide a gas flow in a first direction for half of the process cycle, and in a second direction for the other half of the process cycle.
摘要翻译：半导体衬底处理室为沉积或蚀刻工艺提供双向工艺气流。双向气流提供沉积层厚度的均匀性或蚀刻的均匀性，而不需要旋转衬底。在处理室的相对端设有连接点。每个交汇处都提供入口和出口。相对接合处的入口和出口协作，以在第一方向上提供气流，用于处理循环的一半，并且在处理循环的另外一半的第二方向。

56. 发明授权

US6113703A Method and apparatus for processing the upper and lower faces of a wafer 有权
标题翻译：用于处理晶片的上表面和下表面的方法和设备
公开(公告)号：US6113703A
公开(公告)日：2000-09-05
申请号：US200176
申请日：1998-11-25
申请人： Roger N. Anderson , Seiji Arima , Mahalingam Venkatesan , Kunio Kurihara
发明人： Roger N. Anderson , Seiji Arima , Mahalingam Venkatesan , Kunio Kurihara
IPC分类号： C23C16/455 , C23C16/46 , H01L21/00 , C23C16/00
CPC分类号： H01L21/67115 , C23C16/455 , C23C16/46
摘要： A method and apparatus for processing opposing surfaces of a wafer. In one embodiment a semiconductor processing chamber is provided having an opening which allows for insertion of a wafer. A wafer holder is located within the semiconductor processing chamber for receiving the wafer. An inlet port allows flow of gas into the semiconductor processing chamber. An outlet port allows flow of gas from the semiconductor processing chamber. A first heat plate is mounted within the semiconductor processing chamber so that a first face of a wafer, when held by the wafer holder, faces towards the first heat plate. A first heat source is located to heat the first heat plate. A second heat plate is mounted in position within the semiconductor processing chamber so that a second face of the wafer, opposing the first face, faces towards the second heat plate. A second heat source is located to heat the second heat plate.
摘要翻译：一种用于处理晶片相对表面的方法和装置。在一个实施例中，提供了具有允许插入晶片的开口的半导体处理室。晶片保持器位于半导体处理室内，用于接收晶片。入口端口允许气体流入半导体处理室。出口端口允许来自半导体处理室的气体流动。第一加热板安装在半导体处理室内，使得当由晶片保持器保持时晶片的第一面朝向第一加热板。位于第一热源以加热第一加热板。第二加热板安装在半导体处理室内的适当位置，使得与第一面相对的晶片的第二面朝向第二加热板。位于第二热源以加热第二加热板。

57. 发明授权

US5650082A Profiled substrate heating 失效
标题翻译：型材加热
公开(公告)号：US5650082A
公开(公告)日：1997-07-22
申请号：US486653
申请日：1995-06-07
申请人： Roger N. Anderson
发明人： Roger N. Anderson
IPC分类号： C23C16/48 , C30B25/10 , C30B31/12 , F27D19/00 , H01L21/00 , H01L21/02 , H01L21/26
CPC分类号： H01L21/67248 , C23C16/481 , C30B25/10 , C30B25/105 , C30B31/12 , F27D19/00 , H01L28/55
摘要： An apparatus and method for thermal processing, and more particularly for rapid thermal processing wherein a first thermal radiator generates and projects a first pattern of thermal radiation onto a first surface of a substrate, and wherein a second thermal radiator generates and projects a second pattern of thermal radiation onto a second surface of the substrate. The temperatures on the first and second surfaces are sensed by sensing means. Means for controlling the first and second thermal radiator means in response to the sensing means cause a prescribed temperature profile to be produced within the substrate.
摘要翻译：一种用于热处理的装置和方法，更具体地涉及用于快速热处理的装置和方法，其中第一散热器产生并将第一辐射模式投射到衬底的第一表面上，并且其中第二散热器产生和投影第二图案热辐射到衬底的第二表面上。第一和第二表面上的温度由感测装置检测。用于响应于感测装置控制第一和第二散热器装置的装置使得在基板内产生规定的温度分布。

58. 发明授权

US5599397A Semiconductor wafer process chamber with suspector back coating 失效
标题翻译：半导体晶圆处理室具有悬挂背面涂层
公开(公告)号：US5599397A
公开(公告)日：1997-02-04
申请号：US625271
申请日：1996-03-27
申请人： Roger N. Anderson , H. Peter W. Hey , Israel Beinglass , Mahalingam Venkatesan
发明人： Roger N. Anderson , H. Peter W. Hey , Israel Beinglass , Mahalingam Venkatesan
IPC分类号： C30B25/08 , C23C14/50 , C23C16/44 , C23C16/455 , C23C16/458 , C30B25/10 , C30B25/14 , H01L21/205 , H01L21/31 , C23C16/00
CPC分类号： C23C16/45502 , C23C16/455 , C23C16/45561 , C23C16/45563 , C23C16/4581 , C30B25/105 , C30B25/14
摘要： The present disclosure is directed to an apparatus for depositing a layer of a material on a wafer. The apparatus includes a deposition chamber having an upper dome, a lower dome and a side wall between the upper and lower domes. A susceptor plate is in and extends across the deposition chamber to divide the deposition chamber into an upper portion above the susceptor plate and a lower portion below the susceptor plate. A gas inlet manifold is in the side wall. The manifold has three inlet ports. One of the ports is connected by passages which open into the lower portion of the deposition chamber. The other two ports are connected by passages which open into the upper portion of the deposition chamber. A gas supply system is connected to the inlet ports so as to provide the same gases into the lower portion of the deposition chamber as well as into the upper portion of the deposition chamber. This allows the back surface of the susceptor plate to be coated with a layer of the same material as to be coated on the wafer prior to coating the layer on the wafer.
摘要翻译：本公开涉及一种用于在晶片上沉积材料层的装置。该装置包括具有上圆顶，下圆顶和在上下圆顶之间的侧壁的沉积室。感受板在沉积室中并且延伸穿过沉积室，以将沉积室分成基座板上方的上部和基座板下方的下部。气体入口歧管位于侧壁中。歧管有三个入口。一个端口通过通向沉积室的下部的通道连接。其他两个端口通过通向沉积室的上部的通道连接。气体供给系统连接到入口端口，以便将相同的气体提供到沉积室的下部以及沉积室的上部。这允许在将晶片上的层涂覆之前，使基座板的背面涂覆有要涂覆在晶片上的相同材料的层。

59. 发明授权

US5573334A Method for the turbulent mixing of gases 失效
标题翻译：气体湍流混合的方法
公开(公告)号：US5573334A
公开(公告)日：1996-11-12
申请号：US454762
申请日：1995-05-31
申请人： Roger N. Anderson
发明人： Roger N. Anderson
IPC分类号： B01F3/02 , B01F5/00 , B01F5/02 , H01L21/22 , B01F5/04
CPC分类号： B01F5/0256 , B01F5/0057
摘要： An apparatus and method for the turbulent mixing of gases are described. The invention has particular application when it is desired to produce a gas mixture including a very small quantity (ppm or less) of at least one component gas and/or wherein there is a substantial density difference between the component gases to be used to make up the gas mixture. The apparatus comprises: a tubular housing; at least two orifices or jets located near one end of the housing, through which gases to be mixed can enter the interior of the housing, the orifices or jets being oriented so that a first portion of gas flowing from a first orifice or jet will directly impact a second portion of gas flowing from a second orifice or jet, whereby frictional mixing of the gas components is achieved, further, the centerline of the first orifice or jet is offset from the centerline of the second, opposing orifice or jet, so as to produce a swirling action within the tubular interior of the gas mixer; and an exit opening at the opposite end of the tubular housing.
摘要翻译：描述了用于气体湍流混合的装置和方法。当希望产生包含非常少量（ppm或更少）至少一种组分气体的气体混合物和/或其中用于组成的组分气体之间存在实质密度差时，本发明具有特殊应用气体混合物。该装置包括：管状壳体; 位于壳体一端附近的至少两个孔或喷嘴，待混合的气体可以通过该孔或喷嘴进入壳体的内部，所述孔或射流被定向成使得从第一孔或射流流动的第一部分气体将直接撞击从第二孔或射流流出的气体的第二部分，从而实现气体组分的摩擦混合，此外，第一孔或射流的中心线偏离第二相对的孔或射流的中心线，以便以在气体混合器的管状内部产生旋动作用; 以及在管状壳体的相对端处的出口。

60. 发明授权

US5044943A Spoked susceptor support for enhanced thermal uniformity of susceptor in semiconductor wafer processing apparatus 失效
标题翻译：用于提高半导体晶片处理装置中感受体的热均匀性的旋转基座支撑
公开(公告)号：US5044943A
公开(公告)日：1991-09-03
申请号：US568008
申请日：1990-08-16
申请人： Russell Bowman , Roger N. Anderson
发明人： Russell Bowman , Roger N. Anderson
IPC分类号： H01L21/205 , C23C16/458 , C30B25/10 , C30B25/12 , C30B31/12 , C30B31/14 , F27B17/00 , H01L21/31 , H01L21/67
CPC分类号： C30B31/14 , C23C16/4584 , C30B25/10 , C30B25/12 , C30B31/12 , F27B17/0025
摘要： An apparatus is described for processing semiconductor wafers for the construction of integrated circuit structures thereon wherein a semiconductor wafer is supported on the upper surface of a uniformly heated susceptor. The apparatus comprises a chamber, a circular susceptor in the chamber for supporting a semiconductor wafer thereon, heating means in the chamber beneath the susceptor, and support means for peripherally supporting the susceptor in the chamber comprising 3-6 spokes which are each connected at one end to a central hub which is coaxial with the axis of the circular susceptor, but spaced therefrom to permit even thermal distribution across the susceptor, and opposite ends of the spokes peripherally supporting the susceptor adjacent the end edges thereof, to permit uniform heating of the susceptor by the heating means and uniform thermal distribution of the heat through the susceptor.

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