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51. 发明授权

US08373484B2 Voltage clamp circuit, a switching power supply device, a semiconductor integrated circuit device, and a voltage level conversion circuit 有权
标题翻译：电压钳位电路，开关电源装置，半导体集成电路装置和电压电平转换电路
公开(公告)号：US08373484B2
公开(公告)日：2013-02-12
申请号：US13019833
申请日：2011-02-02
申请人： Ryotaro Kudo , Koji Tateno
发明人： Ryotaro Kudo , Koji Tateno
IPC分类号： H03L5/00 , H03K5/08
CPC分类号： H03K5/08 , H02M7/538
摘要： The present invention provides a voltage clamping circuit which is operated in a stable manner with the simple constitution and a switching power source device which enables a high-speed operation. In a switching power source device, one of source/drain routes is connected to an input terminal to which an input voltage is supplied, a predetermined voltage to be restricted is supplied to a gate, and using a MOSFET which provides a current source between another source/drain route and a ground potential of the circuit, a clamp output voltage which corresponds to the input voltage is obtained from another source/drain route. The switching power source device further includes a first switching element which controls a current which is made to flow in an inductor such that the output voltage assumes a predetermined voltage and a second switching element which clamps an reverse electromotive voltage generated in the inductor when the first switching element is turned off to a predetermined potential. In such a switching power source device, the voltage clamping circuit is used in a feedback route for setting a dead time.
摘要翻译：本发明提供一种以简单结构稳定运行的电压钳位电路和能够进行高速运行的开关电源装置。在开关电源装置中，源/漏路径中的一个连接到输入电压被提供给的输入端，要限制的预定电压被提供给栅极，并且使用在另一个之间提供电流源的MOSFET 源/漏路径和电路的接地电位，从另一个源/漏路径获得对应于输入电压的钳位输出电压。开关电源装置还包括第一开关元件，其控制使得在电感器中流动的电流，使得输出电压呈现预定电压;以及第二开关元件，其在第一开关元件中钳位在电感器中产生的反向电动势电压开关元件被切断到预定电位。在这种开关电源装置中，钳位电路用于设置死区时间的反馈路径。

52. 发明申请

US20130001792A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20130001792A1
公开(公告)日：2013-01-03
申请号：US13531567
申请日：2012-06-24
申请人： Tomoaki UNO , Yoshitaka Onaya , Hirokazu Kato , Ryotaro Kudo , Koji Saikusa , Katsuhiko Funatsu
发明人： Tomoaki UNO , Yoshitaka Onaya , Hirokazu Kato , Ryotaro Kudo , Koji Saikusa , Katsuhiko Funatsu
IPC分类号： H01L23/48
CPC分类号： H01L23/49575 , H01L23/3107 , H01L23/4824 , H01L23/49524 , H01L23/49562 , H01L24/37 , H01L24/40 , H01L24/73 , H01L2224/05554 , H01L2224/32245 , H01L2224/37011 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/37599 , H01L2224/40095 , H01L2224/40245 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/73221 , H01L2224/73265 , H01L2224/83801 , H01L2224/8385 , H01L2224/84801 , H01L2224/8485 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H01L2924/351 , H02M3/1588 , H02M2001/0009 , Y02B70/1466 , H01L2924/00012 , H01L2924/00 , H01L2924/00014
摘要： A power MOSFET for switching and a sense MOSFET having an area smaller than that of the power MOSFET and configured to detect an electric current flowing through the power MOSFET are formed within one semiconductor chip CPH and the semiconductor chip CPH is mounted over a chip mounting part via an electrically conductive joining material and sealed with a resin. In a main surface of the semiconductor chip CPH, a sense MOSFET region in which the sense MOSFET is formed is located more internally than a source pad PDHS4 of the sense MOSFET region RG2. Furthermore, in the main surface of the semiconductor chip, the sense MOSFET region RG2 is surrounded by a region in which the power MOSFET is formed.
摘要翻译：用于开关的功率MOSFET和具有小于功率MOSFET的面积并且被配置为检测流过功率MOSFET的电流的感测MOSFET形成在一个半导体芯片CPH内，并且半导体芯片CPH安装在芯片安装部分通过导电接合材料并用树脂密封。在半导体芯片CPH的主表面中，形成感测MOSFET的感测MOSFET区域位于读出MOSFET区域RG2的源极焊盘PDHS4的内部。此外，在半导体芯片的主表面中，感测MOSFET区域RG2由形成功率MOSFET的区域包围。

53. 发明申请

US20120286365A1 SWITCHING POWER SUPPLY DEVICE AND A SEMICONDUCTOR INTEGRATED CIRCUIT 有权
标题翻译：切换电源装置和半导体集成电路
公开(公告)号：US20120286365A1
公开(公告)日：2012-11-15
申请号：US13469700
申请日：2012-05-11
申请人： KYOICHI HOSOKAWA , Ryotaro Kudo , Toshio Nagasawa , Koji Tateno
发明人： KYOICHI HOSOKAWA , Ryotaro Kudo , Toshio Nagasawa , Koji Tateno
IPC分类号： H01L27/092
CPC分类号： H02M3/1588 , G05F1/44 , H02M7/538 , H03F3/217 , H03F2200/351 , H03F2200/78 , H03K17/063 , H03K17/687 , Y02B70/1466
摘要： In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal. The boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.
摘要翻译：在开关电源中，其通过响应于PWM信号进行开关动作的开关元件来控制在电感器中流动的电流，并且通过串联设置在电感器中的电容器形成输出电压，在开关元件的输出节点和预定的电压端子之间设置由自举电容构成的MOSFET和MOSFET。升压电压用作开关元件的驱动电路的工作电压，另一个源极/漏极区域和衬底栅极彼此连接，并且在一个源极/漏极区域和衬底栅极之间的结二极管被反向导向相对于由自举容量形成的升压电压。

54. 发明授权

US08305060B2 Switching power supply device and a semiconductor integrated circuit 有权
标题翻译：开关电源装置和半导体集成电路
公开(公告)号：US08305060B2
公开(公告)日：2012-11-06
申请号：US13270329
申请日：2011-10-11
申请人： Kyoichi Hosokawa , Ryotaro Kudo , Toshio Nagasawa , Koji Tateno
发明人： Kyoichi Hosokawa , Ryotaro Kudo , Toshio Nagasawa , Koji Tateno
IPC分类号： G05F1/40 , G05F1/10
CPC分类号： H02M3/1588 , G05F1/44 , H02M7/538 , H03F3/217 , H03F2200/351 , H03F2200/78 , H03K17/063 , H03K17/687 , Y02B70/1466
摘要： In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal. The boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other such that when the MOSFET is made to assume an OFF state, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.
摘要翻译：在开关电源中，其通过响应于PWM信号进行开关动作的开关元件来控制在电感器中流动的电流，并且通过串联设置在电感器中的电容器形成输出电压，在开关元件的输出节点和预定的电压端子之间设置由自举电容构成的MOSFET和MOSFET。升压电压用作开关元件的驱动电路的工作电压，另一个源极/漏极区域和衬底栅极彼此连接，使得当MOSFET被制成断开状态时，以及在二极管一个源极/漏极区域和衬底栅极相对于由自举能力形成的升压电压是反向的。

55. 发明授权

US08072246B2 Switching power supply device, semiconductor integrated circuit device and power supply device 有权
标题翻译：开关电源装置，半导体集成电路装置及电源装置
公开(公告)号：US08072246B2
公开(公告)日：2011-12-06
申请号：US12950222
申请日：2010-11-19
申请人： Toshio Nagasawa , Ryotaro Kudo
发明人： Toshio Nagasawa , Ryotaro Kudo
IPC分类号： H03K3/00
CPC分类号： H02M3/156 , Y10T307/826
摘要： A switching power supply device performs a stable operation with fast response for a semiconductor integrated circuit device. A capacitor is provided between the output side of an inductor and a ground potential. A first power MOSFET supplies an electric current from an input voltage to the input side of the inductor. A second power MOSFET turned on when the first power MOSFET is off allows the input side of the inductor to be of a predetermined potential. A first feedback signal corresponding to an output voltage obtained from the output side of the inductor and a second feedback signal corresponding to an electric current flowed to the first power MOSFET are used to form a PWM signal. The first power MOSFET has plural cells of a vertical type MOS-construction.
摘要翻译：开关电源装置对半导体集成电路装置进行快速响应的稳定运行。在电感器的输出侧和地电位之间提供电容器。第一功率MOSFET将电流从输入电压提供给电感器的输入侧。当第一功率MOSFET关断时，第二个功率MOSFET导通，允许电感器的输入侧处于预定电位。使用对应于从电感器的输出侧获得的输出电压的第一反馈信号和对应于流向第一功率MOSFET的电流的第二反馈信号来形成PWM信号。第一功率MOSFET具有垂直型MOS结构的多个单元。

56. 发明授权

US07777462B2 Power supply unit 失效
标题翻译：供电单元
公开(公告)号：US07777462B2
公开(公告)日：2010-08-17
申请号：US12334783
申请日：2008-12-15
申请人： Ryotaro Kudo , Toshio Nagasawa
发明人： Ryotaro Kudo , Toshio Nagasawa
IPC分类号： G05F1/00
CPC分类号： H02M3/1584 , Y10S323/901
摘要： To provide a power supply unit capable of realizing a multiphase power supply at low cost. For example, each of a plurality of semiconductor devices DEV[1]-DEV[n] comprises a trigger input terminal TRG_IN, a trigger output terminal TRG_OUT, and a timer circuit TM that delays a pulse signal input from TRG_IN and outputs it to TRG_OUT. DEV[1]-DEV[n] are mutually coupled in a ring shape by its own TRG_IN being coupled to TRG_OUT of one semiconductor device other than itself. Each of DEV[1]-DEV[n] performs switching operation by using the pulse signal from TRG_IN as a starting point, and feeds a current into an inductor L corresponding to itself. Moreover, DEV[1] generates the above-described pulse signal only once during startup by a start trigger terminal ST being set to a ground voltage GND, for example.
摘要翻译：提供能够以低成本实现多相电源的电源单元。例如，多个半导体器件DEV [1] -DEV [n]中的每一个包括触发输入端子TRG_IN，触发输出端子TRG_OUT和延迟从TRG_IN输入的脉冲信号并将其输出到TRG_OUT的定时器电路TM 。 DEV [1] -DEV [n]通过其自身的TRG_IN相互耦合成环形，其耦合到除了自身之外的一个半导体器件的TRG_OUT。 DEV [1] -DEV [n]中的每一个通过使用来自TRG_IN的脉冲信号作为起始点进行开关操作，并且将电流馈送到对应于其自身的电感器L. 此外，DEV [1]例如由启动触发端子ST被设置为接地电压GND而在启动期间仅产生上述脉冲信号。

57. 发明申请

US20100176782A1 SEMICONDUCTOR CIRCUIT AND SWITCHING POWER SUPPLY APPARATUS 失效
标题翻译：半导体电路和开关电源设备
公开(公告)号：US20100176782A1
公开(公告)日：2010-07-15
申请号：US12732424
申请日：2010-03-26
申请人： Ryotaro Kudo
发明人： Ryotaro Kudo
IPC分类号： G05F1/10
CPC分类号： H02M3/1584 , H01L24/06 , H01L24/48 , H01L24/49 , H01L2224/05554 , H01L2224/0603 , H01L2224/451 , H01L2224/48137 , H01L2224/48247 , H01L2224/4903 , H01L2224/49111 , H01L2224/49113 , H01L2224/49431 , H01L2924/00014 , H01L2924/12032 , H01L2924/13091 , H01L2924/14 , H02M2001/007 , H01L2224/45099 , H01L2924/00
摘要： To provide a power supply apparatus which realizes a high-speed response, a stable operation, and a low output ripple with low power consumption. The first stage switching regulator receives an input voltage and forms a first voltage. The second stage switching regulator receives the first voltage and forms a second voltage. The second stage switching regulator includes an N-phase (N is two or more) switching regulator, and the first voltage is set to be N times a target value of the second voltage. The input voltage is set to be higher than the first voltage.
摘要翻译：提供实现高速响应，稳定操作和低功耗的低输出纹波的电源装置。第一级开关调节器接收输入电压并形成第一电压。第二级开关调节器接收第一电压并形成第二电压。第二级开关调节器包括N相（N是两个或更多个）开关调节器，并且第一电压被设置为第二电压的目标值的N倍。输入电压设定为高于第一电压。

58. 发明申请

US20090295351A1 Voltage Clamp Circuit, A Switching Power Supply Device, A Semiconductor Integrated Circuit Device, and A Voltage Level Conversion Circuit 有权
标题翻译：电压钳位电路，开关电源装置，A半导体集成电路装置和A电压电平转换电路
公开(公告)号：US20090295351A1
公开(公告)日：2009-12-03
申请号：US12534756
申请日：2009-08-03
申请人： Ryotaro Kudo , Koji Tateno
发明人： Ryotaro Kudo , Koji Tateno
IPC分类号： G05F1/00 , H03K5/08
CPC分类号： H03K5/08 , H02M7/538
摘要： The present invention provides a voltage clamping circuit which is operated in a stable manner with the simple constitution and a switching power source device which enables a high-speed operation. In a switching power source device, one of source/drain routes is connected to an input terminal to which an input voltage is supplied, a predetermined voltage to be restricted is supplied to a gate, and using a MOSFET which provides a current source between another source/drain route and a ground potential of the circuit, a clamp output voltage which corresponds to the input voltage is obtained from another source/drain route. The switching power source device further includes a first switching element which controls a current which is made to flow in an inductor such that the output voltage assumes a predetermined voltage and a second switching element which clamps an reverse electromotive voltage generated in the inductor when the first switching element is turned off to a predetermined potential. In such a switching power source device, the voltage clamping circuit is used in a feedback route for setting a dead time.
摘要翻译：本发明提供一种以简单结构稳定运行的电压钳位电路和能够进行高速运行的开关电源装置。在开关电源装置中，源/漏路径中的一个连接到输入电压被提供给的输入端，要限制的预定电压被提供给栅极，并且使用在另一个之间提供电流源的MOSFET 源/漏路径和电路的接地电位，从另一个源/漏路径获得对应于输入电压的钳位输出电压。开关电源装置还包括第一开关元件，其控制使得在电感器中流动的电流，使得输出电压呈现预定电压;以及第二开关元件，其在第一开关元件中钳位在电感器中产生的反向电动势电压开关元件被切断到预定电位。在这种开关电源装置中，钳位电路用于设置死区时间的反馈路径。

59. 发明申请

US20090267587A1 POWER SUPPLY DEVICE AND SWITCHING POWER SUPPLY DEVICE 审中-公开
标题翻译：电源装置和开关电源装置
公开(公告)号：US20090267587A1
公开(公告)日：2009-10-29
申请号：US12487474
申请日：2009-06-18
申请人： Koji Tateno , Ryotaro Kudo , Shin Chiba , Kyoichi Hosokawa , Toshio Nagasawa
发明人： Koji Tateno , Ryotaro Kudo , Shin Chiba , Kyoichi Hosokawa , Toshio Nagasawa
IPC分类号： G05F3/16
CPC分类号： H02M3/1588 , H01L2224/0603 , H01L2224/48137 , H01L2224/48247 , H01L2924/13091 , H02M2001/0009 , Y02B70/1466 , H01L2924/00
摘要： In a driver circuit constructing a switching power supply device that switches power transistors passing a current through a coil by a PWM mode, a current detection transistor, which is smaller in size than the low-potential side power transistor, and a current detection resistor are provided in parallel to the low-potential side power transistor. The same control voltage as the power transistor is applied to the control terminal of the current detection transistor. An operational amplifier is formed, that has the potential of the connection node between the current detection transistor and the current detection resistor applied to its inverse input terminal and a feedback loop, so as to make a pair of input terminals of the operational amplifier be at the same potential. A signal produced by the current detection resistor is thus outputted as a current detection signal.
摘要翻译：在构成开关电源装置的驱动电路中，通过PWM模式切换通过线圈的电流的开关电源装置，尺寸小于低电位侧功率晶体管的电流检测晶体管和电流检测电阻器与低电位侧功率晶体管并联提供。与功率晶体管相同的控制电压施加到电流检测晶体管的控制端。形成运算放大器，其具有电流检测晶体管和施加到其反相输入端的电流检测电阻之间的连接节点的电位和反馈环路，以使运算放大器的一对输入端子处于同样的潜力。因此，由电流检测电阻器产生的信号作为电流检测信号被输出。

60. 发明申请

US20090224732A1 POWER SUPPLY UNIT 失效
标题翻译：供电单元
公开(公告)号：US20090224732A1
公开(公告)日：2009-09-10
申请号：US12334783
申请日：2008-12-15
申请人： Ryotaro Kudo , Toshio Nagasawa
发明人： Ryotaro Kudo , Toshio Nagasawa
IPC分类号： G05F3/08
CPC分类号： H02M3/1584 , Y10S323/901
摘要： To provide a power supply unit capable of realizing a multiphase power supply at low cost. For example, each of a plurality of semiconductor devices DEV[1]-DEV[n] comprises a trigger input terminal TRG_IN, a trigger output terminal TRG_OUT, and a timer circuit TM that delays a pulse signal input from TRG_IN and outputs it to TRG_OUT. DEV[1]-DEV[n] are mutually coupled in a ring shape by its own TRG_IN being coupled to TRG_OUT of one semiconductor device other than itself. Each of DEV[1]-DEV[n] performs switching operation by using the pulse signal from TRG_IN as a starting point, and feeds a current into an inductor L corresponding to itself. Moreover, DEV[1] generates the above-described pulse signal only once during startup by a start trigger terminal ST being set to a ground voltage GND, for example.
摘要翻译：提供能够以低成本实现多相电源的电源单元。例如，多个半导体器件DEV [1] -DEV [n]中的每一个包括触发输入端子TRG_IN，触发输出端子TRG_OUT和延迟从TRG_IN输入的脉冲信号并将其输出到TRG_OUT的定时器电路TM 。 DEV [1] -DEV [n]通过其自身的TRG_IN相互耦合成环形，其耦合到除了自身之外的一个半导体器件的TRG_OUT。 DEV [1] -DEV [n]中的每一个通过使用来自TRG_IN的脉冲信号作为起始点进行开关操作，并且将电流馈送到对应于其自身的电感器L. 此外，DEV [1]例如由启动触发端子ST被设置为接地电压GND而在启动期间仅产生上述脉冲信号。

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