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1. 发明申请

US20130002313A1 SWITCHING POWER SUPPLY DEVICE AND A SEMICONDUCTOR INTEGRATED CIRCUIT 有权
标题翻译：切换电源装置和半导体集成电路
公开(公告)号：US20130002313A1
公开(公告)日：2013-01-03
申请号：US13613359
申请日：2012-09-13
申请人： KYOICHI HOSOKAWA , Ryotaro Kudo , Toshio Nagasawa , Koji Tateno
发明人： KYOICHI HOSOKAWA , Ryotaro Kudo , Toshio Nagasawa , Koji Tateno
IPC分类号： H03K3/00
CPC分类号： H02M3/1588 , G05F1/44 , H02M7/538 , H03F3/217 , H03F2200/351 , H03F2200/78 , H03K17/063 , H03K17/687 , Y02B70/1466
摘要： In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal. The boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.
摘要翻译：在开关电源中，其通过响应于PWM信号进行开关动作的开关元件来控制在电感器中流动的电流，并且通过串联设置在电感器中的电容器形成输出电压，在开关元件的输出节点和预定的电压端子之间设置由自举电容构成的MOSFET和MOSFET。升压电压用作开关元件的驱动电路的工作电压，另一个源极/漏极区域和衬底栅极彼此连接，并且在一个源极/漏极区域和衬底栅极之间的结二极管被反向导向相对于由自举容量形成的升压电压。

2. 发明授权

US08063620B2 Switching power supply device and semiconductor integrated circuit 有权
公开(公告)号：US08063620B2
公开(公告)日：2011-11-22
申请号：US13023560
申请日：2011-02-09
申请人： Kyoichi Hosokawa , Ryotaro Kudo , Toshio Nagasawa , Koji Tateno
发明人： Kyoichi Hosokawa , Ryotaro Kudo , Toshio Nagasawa , Koji Tateno
IPC分类号： G05F1/40 , G05F1/10
CPC分类号： H02M3/1588 , G05F1/44 , H02M7/538 , H03F3/217 , H03F2200/351 , H03F2200/78 , H03K17/063 , H03K17/687 , Y02B70/1466
摘要： The present invention provides a switching power source and a semiconductor integrated circuit which realize an acquisition a sufficient driving voltage of a high-potential side switching element M1 even when a power source voltage VDD is low. In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal, the boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other such that when the MOSFET is made to assume an OFF state, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.

3. 发明授权

US07663354B2 Voltage clamp circuit, a switching power supply device, a semiconductor integrated circuit device, and a voltage level conversion circuit 有权
标题翻译：电压钳位电路，开关电源装置，半导体集成电路装置和电压电平转换电路
公开(公告)号：US07663354B2
公开(公告)日：2010-02-16
申请号：US10586687
申请日：2005-01-14
申请人： Ryotaro Kudo , Koji Tateno
发明人： Ryotaro Kudo , Koji Tateno
IPC分类号： G05F1/00 , G05F3/16
CPC分类号： H03K5/08 , H02M7/538
摘要： The present invention provides a voltage clamping circuit which is operated in a stable manner with the simple constitution and a switching power source device which enables a high-speed operation. In a switching power source device, one of source/drain routes is connected to an input terminal to which an input voltage is supplied, a predetermined voltage to be restricted is supplied to a gate, and using a MOSFET which provides a current source between another source/drain route and a ground potential of the circuit, a clamp output voltage which corresponds to the input voltage is obtained from another source/drain route. The switching power source device further includes a first switching element which controls a current which is made to flow in an inductor such that the output voltage assumes a predetermined voltage and a second switching element which clamps an reverse electromotive voltage generated in the inductor when the first switching element is turned off to a predetermined potential. In such a switching power source device, the voltage clamping circuit is used in a feedback route for setting a dead time.
摘要翻译：本发明提供一种以简单结构稳定运行的电压钳位电路和能够进行高速运行的开关电源装置。在开关电源装置中，源/漏路径中的一个连接到输入电压被提供给的输入端，要限制的预定电压被提供给栅极，并且使用在另一个之间提供电流源的MOSFET 源/漏路径和电路的接地电位，从另一个源/漏路径获得对应于输入电压的钳位输出电压。开关电源装置还包括第一开关元件，其控制使得在电感器中流动的电流，使得输出电压呈现预定电压;以及第二开关元件，其在第一开关元件中钳位在电感器中产生的反向电动势电压开关元件被切断到预定电位。在这种开关电源装置中，钳位电路用于设置死区时间的反馈路径。

4. 发明申请

US20060164057A1 Electronic component for power supply and a power supply device 有权
标题翻译：用于电源的电子部件和电源装置
公开(公告)号：US20060164057A1
公开(公告)日：2006-07-27
申请号：US11338711
申请日：2006-01-25
申请人： Ryotaro Kudo , Kyoichi Hosokawa , Koji Tateno
发明人： Ryotaro Kudo , Kyoichi Hosokawa , Koji Tateno
IPC分类号： G05F1/40 , G05F1/618
CPC分类号： H02M3/1588 , H02M2001/0032 , Y02B70/1466 , Y02B70/16
摘要： This invention provides a semiconductor integrated circuit for drive and a module for building a synchronous rectifier type switching regulator that is able to correctly detect and prevent a reverse current flowing through a coil (inductance element) during light load using a comparator and has a good power efficiency. In a synchronous rectifier type switching regulator including a reverse current detection circuit that is able to detect a state in which a reverse current flows through the inductance element (coil) and a reverse current prevention function, a switching element for synchronous rectification is formed by a plurality of parallel transistors and the transistors are controlled so that a part of them are not driven during light load.
摘要翻译：本发明提供一种用于驱动的半导体集成电路和用于构建同步整流器型开关调节器的模块，其能够在使用比较器的轻负载期间正确地检测和防止流过线圈（电感元件）的反向电流，并具有良好的功率效率。在具有能够检测反向电流流过电感元件（线圈）的状态的反向电流检测电路和反向电流防止功能的同步整流型开关调节器中，通过以下方式形成用于同步整流的开关元件：多个并联晶体管和晶体管被控制，使得它们的一部分在轻负载期间不被驱动。

5. 发明授权

US07902799B2 Switching power supply device and semiconductor integrated circuit 有权
标题翻译：开关电源装置和半导体集成电路
公开(公告)号：US07902799B2
公开(公告)日：2011-03-08
申请号：US12403966
申请日：2009-03-13
申请人： Kyoichi Hosokawa , Ryotaro Kudo , Toshio Nagasawa , Koji Tateno
发明人： Kyoichi Hosokawa , Ryotaro Kudo , Toshio Nagasawa , Koji Tateno
IPC分类号： G05F1/10 , G05F1/40
CPC分类号： H02M3/1588 , G05F1/44 , H02M7/538 , H03F3/217 , H03F2200/351 , H03F2200/78 , H03K17/063 , H03K17/687 , Y02B70/1466
摘要： The present invention provides a switching power source and a semiconductor integrated circuit which realize an acquisition a sufficient driving voltage of a high-potential side switching element M1 even when a power source voltage VDD is low. In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal, the boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other such that when the MOSFET is made to assume an OFF state, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.
摘要翻译：本发明提供一种开关电源和半导体集成电路，即使电源电压VDD低，也能够实现高电位侧开关元件M1的充分驱动电压的获取。在开关电源中，其通过响应于PWM信号进行开关动作的开关元件来控制在电感器中流动的电流，并且通过串联设置在电感器中的电容器形成输出电压，在开关元件的输出节点和预定电压端子之间设置由自举电容和MOSFET构成的升压电压作为开关元件的驱动电路的工作电压，另一个源极/漏极区域和衬底栅极彼此连接，使得当MOSFET被制成断开状态时，并且在一个源极/漏极区域和衬底栅极之间的结二极管相对于由引导件形成的升压电压是反向的容量。

6. 发明授权

US07898232B2 Voltage clamp circuit, a switching power supply device, a semiconductor integrated circuit device, and a voltage level conversion circuit 有权
标题翻译：电压钳位电路，开关电源装置，半导体集成电路装置和电压电平转换电路
公开(公告)号：US07898232B2
公开(公告)日：2011-03-01
申请号：US12534756
申请日：2009-08-03
申请人： Ryotaro Kudo , Koji Tateno
发明人： Ryotaro Kudo , Koji Tateno
IPC分类号： G05F1/00 , G05F3/16
CPC分类号： H03K5/08 , H02M7/538
摘要： The present invention provides a voltage clamping circuit which is operated in a stable manner with the simple constitution and a switching power source device which enables a high-speed operation. In a switching power source device, one of source/drain routes is connected to an input terminal to which an input voltage is supplied, a predetermined voltage to be restricted is supplied to a gate, and using a MOSFET which provides a current source between another source/drain route and a ground potential of the circuit, a clamp output voltage which corresponds to the input voltage is obtained from another source/drain route. The switching power source device further includes a first switching element which controls a current which is made to flow in an inductor such that the output voltage assumes a predetermined voltage and a second switching element which clamps an reverse electromotive voltage generated in the inductor when the first switching element is turned off to a predetermined potential. In such a switching power source device, the voltage clamping circuit is used in a feedback route for setting a dead time.
摘要翻译：本发明提供一种以简单结构稳定运行的电压钳位电路和能够进行高速运行的开关电源装置。在开关电源装置中，源/漏路径中的一个连接到输入电压被提供给的输入端，要限制的预定电压被提供给栅极，并且使用在另一个之间提供电流源的MOSFET 源/漏路径和电路的接地电位，从另一个源/漏路径获得对应于输入电压的钳位输出电压。开关电源装置还包括第一开关元件，其控制使得在电感器中流动的电流，使得输出电压呈现预定电压;以及第二开关元件，其在第一开关元件中钳位在电感器中产生的反向电动势电压开关元件被切断到预定电位。在这种开关电源装置中，钳位电路用于设置死区时间的反馈路径。

7. 发明申请

US20090179620A1 SWITCHING POWER SUPPLY DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT 有权
标题翻译：切换电源设备和半导体集成电路
公开(公告)号：US20090179620A1
公开(公告)日：2009-07-16
申请号：US12403966
申请日：2009-03-13
申请人： KYOICHI HOSOKAWA , Ryotaro Kudo , Toshio Nagasawa , Koji Tateno
发明人： KYOICHI HOSOKAWA , Ryotaro Kudo , Toshio Nagasawa , Koji Tateno
IPC分类号： G05F1/00
CPC分类号： H02M3/1588 , G05F1/44 , H02M7/538 , H03F3/217 , H03F2200/351 , H03F2200/78 , H03K17/063 , H03K17/687 , Y02B70/1466
摘要： The present invention provides a switching power source and a semiconductor integrated circuit which realize an acquisition a sufficient driving voltage of a high-potential side switching element M1 even when a power source voltage VDD is low. In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal, the boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other such that when the MOSFET is made to assume an OFF state, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.
摘要翻译：本发明提供一种开关电源和半导体集成电路，即使电源电压VDD低，也能够实现高电位侧开关元件M1的充分驱动电压的获取。在开关电源中，其通过响应于PWM信号进行开关动作的开关元件来控制在电感器中流动的电流，并且通过串联设置在电感器中的电容器形成输出电压，在开关元件的输出节点和预定电压端子之间设置由自举电容和MOSFET构成的升压电压作为开关元件的驱动电路的工作电压，另一个源极/漏极区域和衬底栅极彼此连接，使得当使MOSFET成为OFF状态时，并且在一个源极/漏极区域和衬底栅极之间的结二极管相对于由引导件形成的升压电压是反向的容量。

8. 发明申请

US20070159150A1 Switching power supply device and a semiconductor integrated circuit 有权
标题翻译：开关电源装置和半导体集成电路
公开(公告)号：US20070159150A1
公开(公告)日：2007-07-12
申请号：US10587215
申请日：2005-01-14
申请人： Kyoichi Hosokawa , Ryotaro Kudo , Toshio Nagasawa , Koji Tateno
发明人： Kyoichi Hosokawa , Ryotaro Kudo , Toshio Nagasawa , Koji Tateno
IPC分类号： G05F1/00
CPC分类号： H02M3/1588 , G05F1/44 , H02M7/538 , H03F3/217 , H03F2200/351 , H03F2200/78 , H03K17/063 , H03K17/687 , Y02B70/1466
摘要： The present invention provides a switching power source and a semiconductor integrated circuit which realize an acquisition a sufficient driving voltage of a high-potential side switching element M1 even when a power source voltage VDD is low. In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal, the boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other such that when the MOSFET is made to assume an OFF state, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.
摘要翻译：本发明提供一种开关电源和半导体集成电路，其即使在电源电压VDD低的情况下也能够实现高电位侧开关元件M 1的足够的驱动电压的获取。在开关电源中，其通过响应于PWM信号进行开关动作的开关元件来控制在电感器中流动的电流，并且通过串联设置在电感器中的电容器形成输出电压，在开关元件的输出节点和预定电压端子之间设置由自举电容和MOSFET构成的升压电压作为开关元件的驱动电路的工作电压，另一个源极/漏极区域和衬底栅极彼此连接，使得当使MOSFET成为OFF状态时，并且在一个源极/漏极区域和衬底栅极之间的结二极管相对于由引导件形成的升压电压是反向的容量。

9. 发明授权

US08638078B2 Voltage clamp circuit, a switching power supply device, a semiconductor integrated circuit device, and a voltage level conversion circuit 有权
标题翻译：电压钳位电路，开关电源装置，半导体集成电路装置和电压电平转换电路
公开(公告)号：US08638078B2
公开(公告)日：2014-01-28
申请号：US13593368
申请日：2012-08-23
申请人： Ryotaro Kudo , Koji Tateno
发明人： Ryotaro Kudo , Koji Tateno
IPC分类号： G05F1/00
CPC分类号： H03K5/08 , H02M7/538
摘要： A voltage clamping circuit which operates in a stable manner and a switching power source device which enables high-speed operation. In the switching power source device, one source/drain route is connected to an input terminal to which an input voltage is supplied, a predetermined voltage to be restricted is supplied to a gate, and using a MOSFET which provides a current source between another source/drain route and a ground potential of the circuit, a clamp output voltage which corresponds to the input voltage is obtained from another source/drain route. The switching power source device further includes a first switching element which controls a current in an inductor and a second switching element which clamps a reverse electromotive voltage generated in the inductor. The voltage clamping circuit is used in a feedback route for setting a dead time.
摘要翻译：稳定工作的钳位电路和能高速运行的开关电源装置。在开关电源装置中，一个源/漏路径被连接到输入电压被提供给的输入端，将要限制的预定电压提供给栅极，并且使用在另一源之间提供电流源的MOSFET /漏极路径和电路的接地电位，从另一个源极/漏极路径获得对应于输入电压的钳位输出电压。开关电源装置还包括控制电感器中的电流的第一开关元件和钳位电感器中产生的反向电动势的第二开关元件。电压钳位电路用于设置死区时间的反馈路径。

10. 发明授权

US08471541B2 Switching power supply device and a semiconductor integrated circuit 有权
标题翻译：开关电源装置和半导体集成电路
公开(公告)号：US08471541B2
公开(公告)日：2013-06-25
申请号：US13469700
申请日：2012-05-11
申请人： Kyoichi Hosokawa , Ryotaro Kudo , Toshio Nagasawa , Koji Tateno
发明人： Kyoichi Hosokawa , Ryotaro Kudo , Toshio Nagasawa , Koji Tateno
IPC分类号： G05F1/40 , G05F1/10
CPC分类号： H02M3/1588 , G05F1/44 , H02M7/538 , H03F3/217 , H03F2200/351 , H03F2200/78 , H03K17/063 , H03K17/687 , Y02B70/1466
摘要： In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal. The boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.
摘要翻译：在开关电源中，其通过响应于PWM信号进行开关动作的开关元件来控制在电感器中流动的电流，并且通过串联设置在电感器中的电容器形成输出电压，在开关元件的输出节点和预定的电压端子之间设置由自举电容构成的MOSFET和MOSFET。升压电压用作开关元件的驱动电路的工作电压，另一个源极/漏极区域和衬底栅极彼此连接，并且在一个源极/漏极区域和衬底栅极之间的结二极管被反向导向相对于由自举容量形成的升压电压。

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