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1. 发明授权

US07902799B2 Switching power supply device and semiconductor integrated circuit 有权
标题翻译：开关电源装置和半导体集成电路
公开(公告)号：US07902799B2
公开(公告)日：2011-03-08
申请号：US12403966
申请日：2009-03-13
申请人： Kyoichi Hosokawa , Ryotaro Kudo , Toshio Nagasawa , Koji Tateno
发明人： Kyoichi Hosokawa , Ryotaro Kudo , Toshio Nagasawa , Koji Tateno
IPC分类号： G05F1/10 , G05F1/40
CPC分类号： H02M3/1588 , G05F1/44 , H02M7/538 , H03F3/217 , H03F2200/351 , H03F2200/78 , H03K17/063 , H03K17/687 , Y02B70/1466
摘要： The present invention provides a switching power source and a semiconductor integrated circuit which realize an acquisition a sufficient driving voltage of a high-potential side switching element M1 even when a power source voltage VDD is low. In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal, the boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other such that when the MOSFET is made to assume an OFF state, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.
摘要翻译：本发明提供一种开关电源和半导体集成电路，即使电源电压VDD低，也能够实现高电位侧开关元件M1的充分驱动电压的获取。在开关电源中，其通过响应于PWM信号进行开关动作的开关元件来控制在电感器中流动的电流，并且通过串联设置在电感器中的电容器形成输出电压，在开关元件的输出节点和预定电压端子之间设置由自举电容和MOSFET构成的升压电压作为开关元件的驱动电路的工作电压，另一个源极/漏极区域和衬底栅极彼此连接，使得当MOSFET被制成断开状态时，并且在一个源极/漏极区域和衬底栅极之间的结二极管相对于由引导件形成的升压电压是反向的容量。

2. 发明申请

US20090179620A1 SWITCHING POWER SUPPLY DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT 有权
标题翻译：切换电源设备和半导体集成电路
公开(公告)号：US20090179620A1
公开(公告)日：2009-07-16
申请号：US12403966
申请日：2009-03-13
申请人： KYOICHI HOSOKAWA , Ryotaro Kudo , Toshio Nagasawa , Koji Tateno
发明人： KYOICHI HOSOKAWA , Ryotaro Kudo , Toshio Nagasawa , Koji Tateno
IPC分类号： G05F1/00
CPC分类号： H02M3/1588 , G05F1/44 , H02M7/538 , H03F3/217 , H03F2200/351 , H03F2200/78 , H03K17/063 , H03K17/687 , Y02B70/1466
摘要： The present invention provides a switching power source and a semiconductor integrated circuit which realize an acquisition a sufficient driving voltage of a high-potential side switching element M1 even when a power source voltage VDD is low. In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal, the boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other such that when the MOSFET is made to assume an OFF state, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.
摘要翻译：本发明提供一种开关电源和半导体集成电路，即使电源电压VDD低，也能够实现高电位侧开关元件M1的充分驱动电压的获取。在开关电源中，其通过响应于PWM信号进行开关动作的开关元件来控制在电感器中流动的电流，并且通过串联设置在电感器中的电容器形成输出电压，在开关元件的输出节点和预定电压端子之间设置由自举电容和MOSFET构成的升压电压作为开关元件的驱动电路的工作电压，另一个源极/漏极区域和衬底栅极彼此连接，使得当使MOSFET成为OFF状态时，并且在一个源极/漏极区域和衬底栅极之间的结二极管相对于由引导件形成的升压电压是反向的容量。

3. 发明申请

US20070159150A1 Switching power supply device and a semiconductor integrated circuit 有权
标题翻译：开关电源装置和半导体集成电路
公开(公告)号：US20070159150A1
公开(公告)日：2007-07-12
申请号：US10587215
申请日：2005-01-14
申请人： Kyoichi Hosokawa , Ryotaro Kudo , Toshio Nagasawa , Koji Tateno
发明人： Kyoichi Hosokawa , Ryotaro Kudo , Toshio Nagasawa , Koji Tateno
IPC分类号： G05F1/00
CPC分类号： H02M3/1588 , G05F1/44 , H02M7/538 , H03F3/217 , H03F2200/351 , H03F2200/78 , H03K17/063 , H03K17/687 , Y02B70/1466
摘要： The present invention provides a switching power source and a semiconductor integrated circuit which realize an acquisition a sufficient driving voltage of a high-potential side switching element M1 even when a power source voltage VDD is low. In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal, the boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other such that when the MOSFET is made to assume an OFF state, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.
摘要翻译：本发明提供一种开关电源和半导体集成电路，其即使在电源电压VDD低的情况下也能够实现高电位侧开关元件M 1的足够的驱动电压的获取。在开关电源中，其通过响应于PWM信号进行开关动作的开关元件来控制在电感器中流动的电流，并且通过串联设置在电感器中的电容器形成输出电压，在开关元件的输出节点和预定电压端子之间设置由自举电容和MOSFET构成的升压电压作为开关元件的驱动电路的工作电压，另一个源极/漏极区域和衬底栅极彼此连接，使得当使MOSFET成为OFF状态时，并且在一个源极/漏极区域和衬底栅极之间的结二极管相对于由引导件形成的升压电压是反向的容量。

4. 发明申请

US20130002313A1 SWITCHING POWER SUPPLY DEVICE AND A SEMICONDUCTOR INTEGRATED CIRCUIT 有权
标题翻译：切换电源装置和半导体集成电路
公开(公告)号：US20130002313A1
公开(公告)日：2013-01-03
申请号：US13613359
申请日：2012-09-13
申请人： KYOICHI HOSOKAWA , Ryotaro Kudo , Toshio Nagasawa , Koji Tateno
发明人： KYOICHI HOSOKAWA , Ryotaro Kudo , Toshio Nagasawa , Koji Tateno
IPC分类号： H03K3/00
CPC分类号： H02M3/1588 , G05F1/44 , H02M7/538 , H03F3/217 , H03F2200/351 , H03F2200/78 , H03K17/063 , H03K17/687 , Y02B70/1466
摘要： In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal. The boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.
摘要翻译：在开关电源中，其通过响应于PWM信号进行开关动作的开关元件来控制在电感器中流动的电流，并且通过串联设置在电感器中的电容器形成输出电压，在开关元件的输出节点和预定的电压端子之间设置由自举电容构成的MOSFET和MOSFET。升压电压用作开关元件的驱动电路的工作电压，另一个源极/漏极区域和衬底栅极彼此连接，并且在一个源极/漏极区域和衬底栅极之间的结二极管被反向导向相对于由自举容量形成的升压电压。

5. 发明授权

US08063620B2 Switching power supply device and semiconductor integrated circuit 有权
公开(公告)号：US08063620B2
公开(公告)日：2011-11-22
申请号：US13023560
申请日：2011-02-09
申请人： Kyoichi Hosokawa , Ryotaro Kudo , Toshio Nagasawa , Koji Tateno
发明人： Kyoichi Hosokawa , Ryotaro Kudo , Toshio Nagasawa , Koji Tateno
IPC分类号： G05F1/40 , G05F1/10
CPC分类号： H02M3/1588 , G05F1/44 , H02M7/538 , H03F3/217 , H03F2200/351 , H03F2200/78 , H03K17/063 , H03K17/687 , Y02B70/1466
摘要： The present invention provides a switching power source and a semiconductor integrated circuit which realize an acquisition a sufficient driving voltage of a high-potential side switching element M1 even when a power source voltage VDD is low. In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal, the boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other such that when the MOSFET is made to assume an OFF state, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.

6. 发明授权

US08604764B2 Switching power supply device and a semiconductor integrated circuit 有权
公开(公告)号：US08604764B2
公开(公告)日：2013-12-10
申请号：US13613359
申请日：2012-09-13
申请人： Kyoichi Hosokawa , Ryotaro Kudo , Toshio Nagasawa , Koji Tateno
发明人： Kyoichi Hosokawa , Ryotaro Kudo , Toshio Nagasawa , Koji Tateno
IPC分类号： G05F1/40 , G05F1/10
CPC分类号： H02M3/1588 , G05F1/44 , H02M7/538 , H03F3/217 , H03F2200/351 , H03F2200/78 , H03K17/063 , H03K17/687 , Y02B70/1466
摘要： In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal. The boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.

7. 发明申请

US20120086062A1 SWITCHING POWER SUPPLY DEVICE AND A SEMICONDUCTOR INTEGRATED CIRCUIT 有权
标题翻译：切换电源装置和半导体集成电路
公开(公告)号：US20120086062A1
公开(公告)日：2012-04-12
申请号：US13270329
申请日：2011-10-11
申请人： KYOICHI HOSOKAWA , Ryotaro Kudo , Toshio Nagasawa , Koji Tateno
发明人： KYOICHI HOSOKAWA , Ryotaro Kudo , Toshio Nagasawa , Koji Tateno
IPC分类号： H01L27/06
CPC分类号： H02M3/1588 , G05F1/44 , H02M7/538 , H03F3/217 , H03F2200/351 , H03F2200/78 , H03K17/063 , H03K17/687 , Y02B70/1466
摘要： In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal. The boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other such that when the MOSFET is made to assume an OFF state, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.
摘要翻译：在开关电源中，其通过响应于PWM信号进行开关动作的开关元件来控制在电感器中流动的电流，并且通过串联设置在电感器中的电容器形成输出电压，在开关元件的输出节点和预定的电压端子之间设置由自举电容构成的MOSFET和MOSFET。升压电压用作开关元件的驱动电路的工作电压，另一个源极/漏极区域和衬底栅极彼此连接，使得当MOSFET被制成断开状态时，以及在二极管一个源极/漏极区域和衬底栅极相对于由自举能力形成的升压电压是反向的。

8. 发明申请

US20080129273A1 POWER SUPPLY DEVICE AND SWITCHING POWER SUPPLY DEVICE 有权
标题翻译：电源装置和开关电源装置
公开(公告)号：US20080129273A1
公开(公告)日：2008-06-05
申请号：US12017706
申请日：2008-01-22
申请人： Koji TATENO , Ryotaro Kudo , Shin Chiba , Kyoichi Hosokawa , Toshio Nagasawa
发明人： Koji TATENO , Ryotaro Kudo , Shin Chiba , Kyoichi Hosokawa , Toshio Nagasawa
IPC分类号： G05F3/16
CPC分类号： H02M3/1588 , H01L2224/48137 , H01L2224/48247 , H02M2001/0009 , Y02B70/1466
摘要： In a driver circuit constructing a switching power supply device that switches power transistors passing a current through a coil by a PWM mode, a current detection transistor, which is smaller in size than the low-potential side power transistor, and a current detection resistor are provided in parallel to the low-potential side power transistor. The same control voltage as the power transistor is applied to the control terminal of the current detection transistor. An operational amplifier is formed, that has the potential of the connection node between the current detection transistor and the current detection resistor applied to its inverse input terminal and a feedback loop, so as to make a pair of input terminals of the operational amplifier be at the same potential. A signal produced by the current detection resistor is thus outputted as a current detection signal.
摘要翻译：在构成开关电源装置的驱动电路中，通过PWM模式切换通过线圈的电流的开关电源装置，尺寸小于低电位侧功率晶体管的电流检测晶体管和电流检测电阻器与低电位侧功率晶体管并联提供。与功率晶体管相同的控制电压施加到电流检测晶体管的控制端。形成运算放大器，其具有电流检测晶体管和施加到其反相输入端的电流检测电阻之间的连接节点的电位和反馈环路，以使运算放大器的一对输入端子处于同样的潜力。因此，由电流检测电阻器产生的信号作为电流检测信号被输出。

9. 发明授权

US08471541B2 Switching power supply device and a semiconductor integrated circuit 有权
标题翻译：开关电源装置和半导体集成电路
公开(公告)号：US08471541B2
公开(公告)日：2013-06-25
申请号：US13469700
申请日：2012-05-11
申请人： Kyoichi Hosokawa , Ryotaro Kudo , Toshio Nagasawa , Koji Tateno
发明人： Kyoichi Hosokawa , Ryotaro Kudo , Toshio Nagasawa , Koji Tateno
IPC分类号： G05F1/40 , G05F1/10
CPC分类号： H02M3/1588 , G05F1/44 , H02M7/538 , H03F3/217 , H03F2200/351 , H03F2200/78 , H03K17/063 , H03K17/687 , Y02B70/1466
摘要： In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal. The boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.
摘要翻译：在开关电源中，其通过响应于PWM信号进行开关动作的开关元件来控制在电感器中流动的电流，并且通过串联设置在电感器中的电容器形成输出电压，在开关元件的输出节点和预定的电压端子之间设置由自举电容构成的MOSFET和MOSFET。升压电压用作开关元件的驱动电路的工作电压，另一个源极/漏极区域和衬底栅极彼此连接，并且在一个源极/漏极区域和衬底栅极之间的结二极管被反向导向相对于由自举容量形成的升压电压。

10. 发明申请

US20110127975A1 SWITCHING POWER SUPPLY DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT 有权
标题翻译：切换电源设备和半导体集成电路
公开(公告)号：US20110127975A1
公开(公告)日：2011-06-02
申请号：US13023560
申请日：2011-02-09
申请人： KYOICHI HOSOKAWA , Ryotaro Kudo , Toshio Nagasawa , Koji Tateno
发明人： KYOICHI HOSOKAWA , Ryotaro Kudo , Toshio Nagasawa , Koji Tateno
IPC分类号： G05F1/40
CPC分类号： H02M3/1588 , G05F1/44 , H02M7/538 , H03F3/217 , H03F2200/351 , H03F2200/78 , H03K17/063 , H03K17/687 , Y02B70/1466
摘要： The present invention provides a switching power source and a semiconductor integrated circuit which realize an acquisition a sufficient driving voltage of a high-potential side switching element M1 even when a power source voltage VDD is low. In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal, the boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other such that when the MOSFET is made to assume an OFF state, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.
摘要翻译：本发明提供一种开关电源和半导体集成电路，即使电源电压VDD低，也能够实现高电位侧开关元件M1的充分的驱动电压的获取。在开关电源中，其通过响应于PWM信号进行开关动作的开关元件来控制在电感器中流动的电流，并且通过串联设置在电感器中的电容器形成输出电压，在开关元件的输出节点和预定电压端子之间设置由自举电容和MOSFET构成的升压电压作为开关元件的驱动电路的工作电压，另一个源极/漏极区域和衬底栅极彼此连接，使得当使MOSFET成为OFF状态时，并且在一个源极/漏极区域和衬底栅极之间的结二极管相对于由引导件形成的升压电压是反向的容量。

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