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51. 发明授权

US08088230B2 Rolling apparatus 有权
标题翻译：滚动装置
公开(公告)号：US08088230B2
公开(公告)日：2012-01-03
申请号：US12293189
申请日：2007-05-16
申请人： Koji Ueda , Toru Ueda , Naoya Seno , Nobuaki Mitamura
发明人： Koji Ueda , Toru Ueda , Naoya Seno , Nobuaki Mitamura
IPC分类号： C23C8/32 , F16C33/32
CPC分类号： C22C38/02 , C21D1/06 , C21D1/10 , C21D9/40 , C21D2211/001 , C21D2211/008 , C22C38/04 , C22C38/18 , C23C8/26 , C23C8/32 , F16C19/06 , F16C19/364 , F16C29/0647 , F16C33/32 , F16C33/34 , F16C33/62 , F16C33/64 , Y02P10/253 , Y10S148/906
摘要： A rolling apparatus including an external member having a raceway surface on an inner peripheral surface thereof, an internal member having a raceway surface on an outer peripheral surface thereof, and a plurality of rolling elements which are rotatably provided between the raceway surface of the external member and the raceway surface of the internal member. A surface of at least one of the internal member, the external member, and the rolling elements is subjected to carbonitriding or nitriding; an area percentage of a nitride containing Si and Mn is 1% or more and 20% or less; surface hardness is HV750 or more. When depth from the raceway surface or depth from a rolling surface of the rolling element is defined as Z and diameter of the rolling element is defined as d, hardness at Z=0.045 d is HV650 to 850, and hardness at Z=0.18 d is HV400 to 800.
摘要翻译：一种滚动装置，包括在其内周面上具有滚道面的外部构件，在其外周面上具有滚道面的内部构件，以及多个滚动体，其可旋转地设置在外部构件的滚道面之间和内部构件的轨道面。内部构件，外部构件和滚动体中的至少一个的表面经受碳氮共渗或氮化; 含有Si和Mn的氮化物的面积百分比为1％以上20％以下; 表面硬度为HV750以上。当从滚道表面的深度或滚动体的滚动面的深度定义为Z，滚动体的直径为d时，Z = 0.045d的硬度为HV650〜850，Z = 0.18d的硬度为 HV400至800。

52. 发明申请

US20110241661A1 BEARING RESIDUAL LIFE PREDICTION METHOD, BEARING RESIDUAL LIFE DIAGNOSTIC APPARATUS AND BEARING DIAGNOSTIC SYSTEM 有权
标题翻译：轴承残余寿命预测方法，轴承寿命诊断装置和轴承诊断系统
公开(公告)号：US20110241661A1
公开(公告)日：2011-10-06
申请号：US13060138
申请日：2010-12-16
申请人： Tsuyoshi Nomura , Takamasa Ohira , Nobuaki Mitamura , Masahide Natori , Tohru Ueda , Ichiro Joko , Hidenobu Magami
发明人： Tsuyoshi Nomura , Takamasa Ohira , Nobuaki Mitamura , Masahide Natori , Tohru Ueda , Ichiro Joko , Hidenobu Magami
IPC分类号： G01R33/12
CPC分类号： G01N27/9046 , F16C19/52 , G01M13/04 , G05B23/0237 , G05B2219/24065 , G05B2219/24075 , Y02P90/14 , Y02P90/20
摘要： A bearing residual life prediction method, a bearing residual life diagnostic apparatus and a bearing diagnostic system can be provided. The bearing diagnostic system 20 includes: an eddy current tester 11 that measures the impedance X of a certain portion of a bearing 24 before and after the use of the bearing; a bearing information transmitter 30 that transmits bearing information s1 containing the impedance X; and a bearing information receiver 31 that receives the information; a diagnostic section 12 that obtains the residual life information s2 of the bearing 24 based on the received impedance X; and a life information transmitter 36 that transmits the residual life information s2; and a life information receiver 40 that receives the information. Hence, the bearing used by the user can be inspected nondestructively, and the residual life of the bearing can be predicted.
摘要翻译：可以提供轴承残余寿命预测方法，轴承残余寿命诊断装置和轴承诊断系统。轴承诊断系统20包括：涡流测试器11，其在轴承使用前后测量轴承24的某一部分的阻抗X; 传送包含阻抗X的承载信息s1的轴承信息发送器30; 和承载信息的承载信息接收器31; 诊断部分12，基于接收到的阻抗X获得轴承24的剩余寿命信息s2; 以及发送剩余寿命信息s2的生命信息发送器36; 以及接收信息的生命信息接收器40。因此，用户使用的轴承可以非破坏性地检查，并且可以预测轴承的剩余寿命。

53. 发明授权

US07712972B2 Optical receptacle 失效
标题翻译：光学插座
公开(公告)号：US07712972B2
公开(公告)日：2010-05-11
申请号：US11779330
申请日：2007-07-18
申请人： Nobuaki Mitamura
发明人： Nobuaki Mitamura
IPC分类号： G02B6/36 , G02B6/38
CPC分类号： G02B6/4246 , G02B6/3874 , G02B6/3893
摘要： The present invention relates to an optical receptacle which prevents the occurrence of a large impact by collision of a plug body with an optical propagation member. The optical receptacle includes a solid sleeve having a cavity hole into which the plug body is inserted from its one end side and which has an even inner diameter so as not to substantially define a gap with respect to an outer diameter of the plug body and an optical propagation member fixedly secured to the other end side of the cavity hole, with the solid sleeve being formed such that a length from an end portion of the cavity hole on the plug body insertion side to the optical propagation member is longer than a maximum length of extension due to the elastic body of the terminal member.
摘要翻译：光插座技术领域本发明涉及防止插头体与光传播部件的碰撞产生大的冲击的光插座。光学插座包括具有空腔孔的实心套管，插塞体从其一端侧插入其中，并且具有均匀的内径，以便不相对于插塞本体的外径基本上限定间隙，固定在空腔孔的另一端侧的光传播部件，其中实心套筒形成为使得从塞体主体插入侧的孔洞的端部到光传播部件的长度比最大长度长由于端子构件的弹性体的延伸。

54. 发明授权

US07407866B2 Soi wafer and a method for producing the same 有权
标题翻译：硅晶片及其制造方法
公开(公告)号：US07407866B2
公开(公告)日：2008-08-05
申请号：US10542376
申请日：2004-01-22
申请人： Masahiro Sakurada , Nobuaki Mitamura , Izumi Fusegawa
发明人： Masahiro Sakurada , Nobuaki Mitamura , Izumi Fusegawa
IPC分类号： H01L21/00
CPC分类号： C30B29/06 , C30B15/203 , H01L21/76251
摘要： An SOI wafer in which a base wafer and a bond wafer respectively consisting of silicon single crystal are bonded via an oxide film, and then the bond wafer is thinned to form a silicon active layer, wherein the base wafer is formed of silicon single crystal grown by Czochralski method, and the whole surface of the base wafer is within N region outside OSF region and doesn't include a defect region detected by Cu deposition method, or the whole surface of the base wafer is within a region outside OSF region, doesn't include a defect region detected by Cu deposition method, and includes I region containing dislocation cluster due to interstitial silicon. Thereby, there is provided an SOI wafer that retains high insulating properties and has an excellent electrical reliability in device fabrication even in the case of forming an extremely thin interlevel dielectric oxide film with, for example, a thickness of 100 nm or less.
摘要翻译：其中分别由硅单晶构成的基底晶片和接合晶片通过氧化膜结合的SOI晶片，然后将接合晶片变薄以形成硅有源层，其中，基底晶片由单晶硅单晶通过切克劳斯基法，基底晶片的整个表面在OSF区域外的N区域内，并且不包括通过Cu沉积法检测的缺陷区域，或者基底晶片的整个表面在OSF区域外的区域内，不包括通过Cu沉积法检测的缺陷区域，并且包括由于间隙硅而含有位错簇的I区域。由此，提供了即使在形成例如厚度为100nm以下的极薄的层间电介质氧化膜的情况下，也能够在器件制造中保持高绝缘性且具有优异的电可靠性的SOI晶片。

55. 发明授权

US07323048B2 Method for producing a single crystal and a single crystal 失效
标题翻译：单晶和单晶的制造方法
公开(公告)号：US07323048B2
公开(公告)日：2008-01-29
申请号：US10561205
申请日：2004-05-28
申请人： Masahiro Sakurada , Makoto Iida , Nobuaki Mitamura , Atsushi Ozaki
发明人： Masahiro Sakurada , Makoto Iida , Nobuaki Mitamura , Atsushi Ozaki
IPC分类号： C30B15/20
CPC分类号： C30B29/06 , C30B15/203
摘要： A method for producing a single crystal in which when the single crystal is grown by Czochralski method, V/G is controlled by controlling a fluctuation of a temperature gradient G of the crystal which is being pulled without lowering a pulling rate V, thereby the single crystal including a desired defect region over a whole plane in a radial direction of the crystal entirely in a direction of the crystal growth axis can be produced effectively for a short time at a high yield.
摘要翻译：一种单晶的制造方法，其中，当通过Czochralski法生长单晶时，通过控制正在拉动的晶体的温度梯度G的波动来控制V / G，而不降低拉伸速率V，从而单可以在晶体生长轴方向上在整个晶体的径向方向上的整个平面上包括期望的缺陷区域的产物在短时间内以高产率有效地产生。

56. 发明授权

US07179330B2 Method of manufacturing silicon single crystal, silicon single crystal and silicon wafer 有权
标题翻译：硅单晶，硅单晶和硅晶片的制造方法
公开(公告)号：US07179330B2
公开(公告)日：2007-02-20
申请号：US10510695
申请日：2003-04-23
申请人： Izumi Fusegawa , Sadayuki Okuni , Nobuaki Mitamura , Tomohiko Ohta , Nobuo Katuoka
发明人： Izumi Fusegawa , Sadayuki Okuni , Nobuaki Mitamura , Tomohiko Ohta , Nobuo Katuoka
IPC分类号： C30B15/00
CPC分类号： C30B15/22 , C30B15/36 , C30B29/06 , Y10T117/1032
摘要： The present invention is a method of manufacturing a silicon single crystal by Czochralski method without performing Dash Necking method, wherein a temperature variation at a surface of a silicon melt is kept at ±5° C. or less at least for a period from a point of bringing the tip end of a seed crystal into contact with the silicon melt to a point of shifting to pull the single crystal. Thereby, in a method of growing a silicon single crystal by Czochralski method without using Dash Necking method, a success ratio of growing a single crystal free from dislocation can be increased, at the same time a heavy silicon single crystal having a large diameter in which a diameter of a constant diameter portion is over 200 mm can be grown even in the case of growing a silicon single crystal having a crystal orientation of .
摘要翻译：本发明是通过Czochralski法制造单晶硅的方法，而不进行Dash Necking方法，其中硅熔体表面的温度变化至少保持在±5℃或更低的时间点使晶种的尖端与硅熔体接触以转移以拉动单晶。因此，在不使用Dash Necking法的情况下，通过Czochralski法生长硅单晶的方法中，可以提高生长不含位错的单晶的成功率，同时可以增加直径大的重硅单晶，其中，即使在生长晶体取向为<110>的硅单晶的情况下，也可以生长恒定直径部分的直径超过200mm。

57. 发明授权

US06956700B1 Wavelength dispersion compensating apparatus 失效
标题翻译：波长色散补偿装置
公开(公告)号：US06956700B1
公开(公告)日：2005-10-18
申请号：US10901219
申请日：2004-07-29
申请人： Nobuaki Mitamura , Shinji Maruyama
发明人： Nobuaki Mitamura , Shinji Maruyama
IPC分类号： G02B26/08 , G02B5/18 , G02B6/34 , G02B27/00
CPC分类号： G02B6/12007 , G02B6/29311 , G02B6/29358 , G02B6/29394 , G02B6/29395 , H04B10/25133
摘要： A wavelength dispersion compensating apparatus of the invention comprises: a VIPA plate capable to output incident lights at different angles according to wavelengths; a variable dispersion diffraction grating which can angularly disperse the lights of respective wavelengths output from the VIPA plate, in a direction substantially perpendicular to a direction of angular dispersion in the VIPA plate and also capable to change an amount of the angular dispersion; a light return apparatus which condenses the output lights from the variable dispersion diffraction grating and reflects them by a mirror, to return them to the VIPA plate side; and a stage rotation mechanism which rotates a movable stage on which the lens and the mirror are mounted, according to a diffraction angle in the variable dispersion diffraction grating, so as to enable wavelength dispersion and wavelength dispersion slope to be given to a WDM light, to be changed independently. As a result, it becomes possible to compensate for, over a wide wavelength band, the wavelength dispersion and wavelength dispersion slope of the WDM light, which are propagated through an optical fiber to be accumulated.
摘要翻译：本发明的波长色散补偿装置包括：能够根据波长以不同角度输出入射光的VIPA板; 可变色散衍射光栅，其可以在与VIPA板中的角度色散方向基本垂直的方向上有效地分散从VIPA板输出的各个波长的光，并且还能够改变角度色散的量; 将可变色散衍射光栅的输出光聚焦并通过反射镜反射的光返回装置返回到VIPA板侧; 以及根据可变色散衍射光栅中的衍射角使安装有透镜和反射镜的可移动台旋转的台旋转机构，以便能够对WDM光赋予波长色散和波长色散斜率，独立改变结果，可以在宽波长带上补偿通过待累积的光纤传播的WDM光的波长色散和波长色散斜率。

58. 发明申请

US20050160966A1 Method for producing silicon single crystal and, silicon single crystal and silicon wafer 有权
标题翻译：硅单晶和硅单晶硅晶片的制造方法
公开(公告)号：US20050160966A1
公开(公告)日：2005-07-28
申请号：US10510695
申请日：2003-04-23
申请人： Izumi Fusegawa , Sadayuki Okuni , Nobuaki Mitamura , Tomohiko Ohta , Nobuo Katuoka
发明人： Izumi Fusegawa , Sadayuki Okuni , Nobuaki Mitamura , Tomohiko Ohta , Nobuo Katuoka
IPC分类号： C30B15/00 , C30B15/36 , C30B29/06 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C30B15/22 , C30B15/36 , C30B29/06 , Y10T117/1032
摘要： The present invention is a method of manufacturing a silicon single crystal by Czochralski method without performing Dash Necking method, wherein a temperature variation at a surface of a silicon melt is kept at ±5° C. or less at least for a period from a point of bringing the tip end of a seed crystal into contact with the silicon melt to a point of shifting to pull the single crystal. Thereby, in a method of growing a silicon single crystal by Czochralski method without using Dash Necking method, a success ratio of growing a single crystal free from dislocation can be increased, at the same time a heavy silicon single crystal having a large diameter in which a diameter of a constant diameter portion is over 200 mm can be grown even in the case of growing a silicon single crystal having a crystal orientation of
摘要翻译：本发明是通过Czochralski法制造单晶硅的方法，而不进行Dash Necking方法，其中硅熔体表面的温度变化至少保持在±5℃以下，使晶种的尖端与硅熔体接触以转移以拉动单晶。因此，在不使用Dash Necking法的情况下，通过Czochralski法生长硅单晶的方法中，可以提高生长不含位错的单晶的成功率，同时可以增加直径大的重硅单晶，其中，即使在生长晶体取向<110°的硅单晶的情况下，也可以生长恒定直径部分的直径超过200mm，

59. 发明申请

US20050094272A1 Wavelength characteristic variable filter, optical amplifier, and optical communications apparatus 审中-公开
标题翻译：波长特性可变滤波器，光放大器和光通信装置
公开(公告)号：US20050094272A1
公开(公告)日：2005-05-05
申请号：US10821857
申请日：2004-04-12
申请人： Norihisa Naganuma , Nobuaki Mitamura , Shinji Maruyama , Hiroshi Nagaeda , Hirotomo Izumi
发明人： Norihisa Naganuma , Nobuaki Mitamura , Shinji Maruyama , Hiroshi Nagaeda , Hirotomo Izumi
IPC分类号： G02B26/00 , G02B5/18 , G02B5/28 , G02B6/34 , H04J14/02
CPC分类号： G02B6/29358 , G02B6/2937 , G02B6/29395 , H04B10/25073 , H04J14/02
摘要： Light emitted from an optical fiber is collimated by a collimating lens. An optical filter with a slit is placed in the path of the collimated light. The slit can be moved along a direction perpendicular to the path of the collimated light. When the slit is on the center of the collimated beam, because the intensity of light is high at the center, the diffraction loss of the light is high. When the slit is on the edge, because the light intensity is low at the edge, the diffraction loss is low. The diffraction loss has a wavelength characteristic and can be controlled by adjusting the position of the slit in the collimated beam.
摘要翻译：由光纤发射的光被准直透镜准直。具有狭缝的滤光器被放置在准直光的路径中。狭缝可以沿着与准直光的路径垂直的方向移动。当狭缝位于准直光束的中心时，由于光的中心强度高，所以光的衍射损耗高。当狭缝在边缘上时，由于边缘处的光强度低，所以衍射损耗低。衍射损耗具有波长特性，并且可以通过调整准直光束中的狭缝的位置来控制。

60. 发明授权

US06826318B2 Variable polarization plane rotator and optical device using same 失效
标题翻译：可变偏振平面旋转器和使用其的光学装置
公开(公告)号：US06826318B2
公开(公告)日：2004-11-30
申请号：US10061307
申请日：2002-02-04
申请人： Hiroshi Nagaeda , Nobuaki Mitamura , Kazuaki Akimoto
发明人： Hiroshi Nagaeda , Nobuaki Mitamura , Kazuaki Akimoto
IPC分类号： G02B600
CPC分类号： G02B6/29302 , G02B6/266 , G02B6/272 , G02B6/2766 , G02B27/286 , G02F1/0136 , G02F2201/17 , G02F2203/48
摘要： An optical device includes a small and low-cost variable polarization plane rotator that can control a rotation angle of the polarization plane easily. A variable polarization plane rotator is provided with a &lgr;/4 phase plate having an optical axis in the same direction as, or at a 90 degree angle relative to, a polarization direction of an input light beam. A phase difference variable element has an optical axis at a ±45 degree angle relative to the optical axis of the &lgr;/4 phase plate, to apply a variable phase difference between the polarization components parallel to and perpendicular to the optical axis thereof. A phase difference adjustment section adjusts the variable phase difference of the phase difference variable element, wherein the input light beam after being transmitted through the phase difference variable element to form elliptically polarized light or circularly polarized light, is transmitted through the &lgr;/4 phase plate to form linearly polarized light. The polarization plane of the input light beam is rotated by an angle corresponding to the phase difference applied by the phase difference variable element.
摘要翻译：光学装置包括可以容易地控制偏振面的旋转角度的小而低成本的可变偏振面旋转器。可变偏振面旋转体设置有λ/ 4相位板，其具有与输入光束的偏振方向相同的方向或相对于输入光束的偏振方向成90度角的光轴。相位差可变元件相对于λ/ 4相位板的光轴具有±45度角的光轴，以在平行于其并垂直于其光轴的偏振分量之间施加可变相位差。相位差调整部分调节相位差可变元件的可变相位差，其中通过相位差可变元件传输以形成椭圆偏振光或圆偏振光的输入光束透射通过λ/ 4相位板以形成线偏振光。输入光束的偏振平面旋转与由相位差可变元件施加的相位差对应的角度。

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