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51. 发明授权

US07105362B2 Method of forming dielectric film 有权
公开(公告)号：US07105362B2
公开(公告)日：2006-09-12
申请号：US10527683
申请日：2003-10-17
申请人： Tsuyoshi Takahashi , Hiroshi Shinriki , Kazumi Kubo
发明人： Tsuyoshi Takahashi , Hiroshi Shinriki , Kazumi Kubo
IPC分类号： H01L21/00
CPC分类号： H01L21/022 , C23C16/405 , H01L21/02181 , H01L21/02189 , H01L21/02271 , H01L21/28194 , H01L21/28202 , H01L21/31604 , H01L27/10852 , H01L29/513 , H01L29/517
摘要： A method of forming a dielectric film by an organic metal CVD method, comprising the step of supplying an organic metal compound into a treating container having a substrate to be treated held therein to form the dielectric film on the substrate, wherein the dielectric film forming step comprises the first step of depositing, in the treating container, the dielectric film under a first condition so set as to allow the residence time of the organic metal compound to extend to a first value, and the second step of further depositing, after the first step and in the treating container, the dielectric film under a second condition so set as to allow the residence time of the organic metal compound to extend to a second value smaller than the first value.

52. 发明申请

US20050218469A1 Optical semiconductor integrated circuit device 审中-公开
标题翻译：光半导体集成电路器件
公开(公告)号：US20050218469A1
公开(公告)日：2005-10-06
申请号：US11086998
申请日：2005-03-23
申请人： Tsuyoshi Takahashi , Katsuya Okabe
发明人： Tsuyoshi Takahashi , Katsuya Okabe
IPC分类号： H01L27/14 , H01L31/105
CPC分类号： H01L31/105 , H01L27/14625 , H01L27/1463 , H01L27/14632 , H01L27/14636
摘要： Disclosed is an optical semiconductor integrated circuit device, in which an opening portion is formed in an insulating layer, which is formed in a light receiving region of a photodiode, and the insulating layer is covered with a refractory metal layer as a light shadowing film. As result, since the refractory metal layer has an excellent step coverage, the refractory metal layer is not broken by a step of the opening portion located on an upper plane of a region where the photodiode is formed. Accordingly, a problem that the light shadowing film is broken when Al is used as the light shadowing film is solved.
摘要翻译：公开了一种光学半导体集成电路器件，其中在绝缘层中形成开口部分，该绝缘层形成在光电二极管的光接收区域中，绝缘层被作为遮光膜的难熔金属层覆盖。结果，由于难熔金属层具有优异的台阶覆盖率，难熔金属层不会被位于形成光电二极管的区域的上平面上的开口部分的台阶破坏。因此，解决了当使用Al作为遮光膜时遮光膜破裂的问题。

53. 发明授权

US06927112B2 Radical processing of a sub-nanometer insulation film 有权
标题翻译：亚纳米绝缘膜的自由基处理
公开(公告)号：US06927112B2
公开(公告)日：2005-08-09
申请号：US10310949
申请日：2002-12-06
申请人： Masanobu Igeta , Shintaro Aoyama , Hiroshi Shinriki , Tsuyoshi Takahashi
发明人： Masanobu Igeta , Shintaro Aoyama , Hiroshi Shinriki , Tsuyoshi Takahashi
IPC分类号： H01L21/00 , H01L21/28 , H01L21/314 , H01L21/316 , H01L29/51 , H01L21/8238
CPC分类号： H01L21/28185 , C23C16/34 , C23C16/405 , C23C16/482 , H01L21/0214 , H01L21/02238 , H01L21/02249 , H01L21/02255 , H01L21/02332 , H01L21/0234 , H01L21/28194 , H01L21/28202 , H01L21/31155 , H01L21/3144 , H01L21/3145 , H01L21/316 , H01L21/31641 , H01L21/31645 , H01L21/31662 , H01L21/67017 , H01L29/513 , H01L29/517 , H01L29/518
摘要： A method of nitriding an insulation film, includes the steps of forming nitrogen radicals by high-frequency plasma, and causing nitridation in a surface of an insulation film containing therein oxygen, by supplying the nitrogen radicals to the surface of the insulation film.
摘要翻译：对绝缘膜进行氮化的方法包括以下步骤：通过在绝缘膜的表面供给氮自由基，通过高频等离子体形成氮自由基，并在其中含有氧的绝缘膜的表面发生氮化。

54. 发明授权

US06914356B2 Rotating electric machine and method for manufacturing the same 有权
标题翻译：旋转电机及其制造方法
公开(公告)号：US06914356B2
公开(公告)日：2005-07-05
申请号：US10302867
申请日：2002-11-25
申请人： Akihiro Yamamura , Tetsunao Takaki , Tsuyoshi Takahashi , Akifumi Miyake , Akira Izawa , Hiromu Nonoguchi , Kazuo Matsunaga , Hiroyuki Akita
发明人： Akihiro Yamamura , Tetsunao Takaki , Tsuyoshi Takahashi , Akifumi Miyake , Akira Izawa , Hiromu Nonoguchi , Kazuo Matsunaga , Hiroyuki Akita
IPC分类号： H02K3/04 , H02K3/50 , H02K3/52 , H02K15/04 , H02K11/00
CPC分类号： H02K3/50 , H02K3/522 , H02K2203/09
摘要： A conductive member includes a strip conductive portion 24 and an arm portion 22 integral with the strip conductive portion 24 and extending from a side end portion 24a of the strip conductive portion 24 to be almost parallel in a longitudinal direction, the arm portion being bent in a direction of plate thickness for the strip conductive portion 24.
摘要翻译：导电部件包括带状导电部分24和与带状导电部分24成一体并且从带状导电部分24的侧端部分24a延伸到大致平行于纵向方向的臂部分22，臂部分弯曲在带状导电部24的板厚方向上。

55. 发明申请

US20050059259A1 Interfacial oxidation process for high-k gate dielectric process integration 有权
标题翻译：用于高k栅介质工艺集成的界面氧化工艺
公开(公告)号：US20050059259A1
公开(公告)日：2005-03-17
申请号：US10662875
申请日：2003-09-16
申请人： David O'Meara , Cory Wajda , Tsuyoshi Takahashi , Alessandro Callegari , Kristen Scheer , Sufi Zafar , Paul Jamison
发明人： David O'Meara , Cory Wajda , Tsuyoshi Takahashi , Alessandro Callegari , Kristen Scheer , Sufi Zafar , Paul Jamison
IPC分类号： H01L21/28 , H01L21/314 , H01L21/316 , H01L29/51 , H01L21/31 , H01L21/469
CPC分类号： H01L21/28185 , H01L21/02181 , H01L21/02233 , H01L21/02238 , H01L21/02255 , H01L21/02271 , H01L21/02304 , H01L21/28194 , H01L21/28202 , H01L21/3143 , H01L21/31604 , H01L21/31616 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L21/31658 , H01L21/31662 , H01L29/513 , H01L29/517 , H01L29/518
摘要： A method is provided for forming a microstructure with an interfacial oxide layer by using a diffusion filter layer to control the oxidation properties of a substrate associated with formation of a high-k layer into the microstructure. The diffusion filter layer controls the oxidation of the surface. The interfacial oxide layer can be formed during an oxidation process that is carried out following deposition of a high-k layer onto the diffusion filter layer, or during deposition of a high-k layer onto the diffusion filter layer.
摘要翻译：提供了一种用于通过使用扩散过滤层来形成具有界面氧化物层的微观结构以控制与形成高k层的微结构相关联的衬底的氧化性能的方法。扩散过滤层控制表面的氧化。可以在氧化过程中形成界面氧化物层，该氧化过程在沉积高k层到扩散过滤层上之后或在沉积高k层到扩散过滤层上之后进行。

56. 发明授权

US06771449B1 Falling sensor and the information processing device making use of it 失效
标题翻译：落下的传感器和使用它的信息处理设备
公开(公告)号：US06771449B1
公开(公告)日：2004-08-03
申请号：US09694372
申请日：2000-10-24
申请人： Tatsuya Ito , Tadashi Okumura , Tsuyoshi Takahashi , Masatoshi Ishikawa , Yuji Nishimura , Tetsuo Yuki
发明人： Tatsuya Ito , Tadashi Okumura , Tsuyoshi Takahashi , Masatoshi Ishikawa , Yuji Nishimura , Tetsuo Yuki
IPC分类号： G11B2102
CPC分类号： G01P15/0891 , G11B5/54 , G11B19/04 , G11B21/12
摘要： A falling sensor is provided, which detects a falling of a magnetic disk drive or a information processing device installed with the magnetic disk drive and which is effective for avoiding physical damage of magnetic heads and magnetic disk media. The magnetic disk drive or the information processing device, include an unload mechanism moving or evacuating the magnetic head from a surface of the magnetic disk media, and a falling sensor comprising a conductive flexible beam or member having a compatible function, a conductive weight supported by these beams and a conductive wall arranged to be made in contact or non-contact with the weight. The sensor can detect a falling of the magnetic disk drive or the information processing device, which is typically a notebook personal computer installed with the magnetic disk drive, and evacuate the magnetic head by the unload mechanism. The conductive wall can be formed of a tubular member.
摘要翻译：提供了一种下降的传感器，其检测磁盘驱动器或安装有磁盘驱动器的信息处理装置的下降，并且其有效地避免磁头和磁盘介质的物理损坏。磁盘驱动器或信息处理装置包括从磁盘介质的表面移动或抽出磁头的卸载机构，以及包括具有兼容功能的导电柔性梁或构件的下落传感器，由这些梁和导电壁布置成与重物接触或不接触。该传感器可以检测磁盘驱动器或信息处理装置的下落，该装置通常是安装有磁盘驱动器的笔记本个人计算机，并通过卸载机构排出磁头。导电壁可以由管状构件形成。

57. 发明授权

US06531245B2 Fuel cell, separator for the same and method for distributing gas in fuel cell 失效
公开(公告)号：US06531245B2
公开(公告)日：2003-03-11
申请号：US09954178
申请日：2001-09-18
申请人： Seiji Mizuno , Tsuyoshi Takahashi , Mikio Wada
发明人： Seiji Mizuno , Tsuyoshi Takahashi , Mikio Wada
IPC分类号： H01M214
CPC分类号： H01M8/0247 , H01M8/0258 , H01M8/0263 , H01M8/0273 , H01M8/04089 , H01M8/241 , H01M8/2457 , H01M8/2483
摘要： Separators for unit cells of a fuel cell each have a plurality of through holes extending therethrough and a recessed portion formed in a surface thereof. In a fuel cell incorporating such separators, the recessed portion of each separator forms an in-cell oxidative gas passage, together with an adjacent cathode. An oxidative gas, supplied from an external device into the fuel cell, is distributed from an oxidative gas supply manifold formed by holes of the separators, to the in-cell oxidative gas passages. The oxidative gas is then collected in an oxidative gas discharge manifold formed by holes of the separators, and conveyed out of the fuel cell by the discharge manifold. During the passage through each in-cell oxidative gas passage, the oxidative gas flows via an oxidative gas transit manifold formed by holes of the separators.

58. 发明授权

US06469866B1 Spindle motor and magnetic disc device with hydrodynamic bearing 失效
标题翻译：主轴电动机和带有流体动力轴承的磁盘装置
公开(公告)号：US06469866B1
公开(公告)日：2002-10-22
申请号：US09504043
申请日：2000-02-14
申请人： Katsutoshi Nii , Masaru Muranishi , Shozo Saegusa , Tsuyoshi Takahashi , Kenji Tomida , Takashi Matsuki , Yuuichi Yanagase , Mitsuyuki Tsuyuki , Shinobu Yoshida , Hiroshi Nishida , Kazuhiko Kawakami
发明人： Katsutoshi Nii , Masaru Muranishi , Shozo Saegusa , Tsuyoshi Takahashi , Kenji Tomida , Takashi Matsuki , Yuuichi Yanagase , Mitsuyuki Tsuyuki , Shinobu Yoshida , Hiroshi Nishida , Kazuhiko Kawakami
IPC分类号： G11B1920
CPC分类号： H02K7/09 , F16C17/028 , F16C17/045 , F16C17/047 , F16C17/10 , F16C17/26 , F16C33/1035 , F16C33/107 , F16C2370/12 , G11B19/2009 , G11B19/2036 , H02K7/085
摘要： A rotary shaft is rotatably supported by a hydrodynamic fluid radial bearing and a hydrodynamic fluid thrust bearing which are excellent in shock resistance, an bearing arrangement in which vibration in a translation mode of the shaft, among vibration components caused by unbalance force exerted to the rotary shaft, is supported by the radial bearing, and vibration in conical mode is supported by the thrust bearing, magnetic fluid is used as lubrication oil, and a permanent magnet is located between the radial bearing and the thrust bearing so as to apply a magnetic attracting force between the rotary shaft and the thrust bearing so as to carry out axial positioning in order to use the magnetic disc device in an arbitrary attaching posture. With this arrangement, the magnetic disc device using such a bearing arrangement can enhance portability, thinning and antishock ability, and reduce noise and power consumption, thereby it is possible to provide a note-type personal computer with a high degree of reliability.
摘要翻译：旋转轴由能够抗冲击性优异的流体动力流体径向轴承和流体动力学流体推力轴承可旋转地支撑，轴承装置，其中轴的平移模式中的振动由施加到旋转体的不平衡力引起的振动分量之中轴由径向轴承支撑，锥形模式的振动由推力轴承支撑，磁流体用作润滑油，永磁体位于径向轴承和推力轴承之间，以便施加磁吸力旋转轴和推力轴承之间的力，以便执行轴向定位，以便以任意的安装姿势使用磁盘装置。通过这种布置，使用这种轴承装置的磁盘装置可以提高便携性，变薄和抗震能力，并且降低噪声和功耗，从而可以提供具有高度可靠性的笔记型个人计算机。

59. 发明授权

US06404021B1 Laminated structure and a method of forming the same 失效
标题翻译：叠层结构及其形成方法
公开(公告)号：US06404021B1
公开(公告)日：2002-06-11
申请号：US09023712
申请日：1998-02-13
申请人： Masato Koizumi , Kazuya Okubo , Tsuyoshi Takahashi , Tsuyoshi Hashimoto , Kimihiro Matsuse
发明人： Masato Koizumi , Kazuya Okubo , Tsuyoshi Takahashi , Tsuyoshi Hashimoto , Kimihiro Matsuse
IPC分类号： H01L2976
CPC分类号： H01L29/4933 , H01L21/28061 , H01L21/76889 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a gate electrode of a multi-layer structure includes a step of supplying a processing gas for poly-crystal film formation and impurities of a P-type into a film formation device, to form a poly-crystal silicon layer doped with P-type impurities, on a surface of a gate film target, a step of maintaining the processing target in the film formation device to prevent formation of an oxide film might not be formed on the poly-crystal silicon layer, and a step of supplying a processing gas for tungsten silicide film formation and impurities of a P-type into the film formation device, to form a tungsten silicide layer doped with impurities of P-type impurities, on the poly-crystal silicon layer on which no oxide film is formed.
摘要翻译：形成多层结构的栅电极的方法包括：向成膜器件提供多晶硅膜形成处理气体和P型杂质的步骤，以形成掺杂有多晶硅层的多晶硅层在栅极膜靶的表面上的P型杂质可能不会在多晶硅层上形成保持成膜装置中的处理对象以防止形成氧化膜的步骤，用于形成钨硅化物膜的处理气体和P型杂质成膜装置，以在不形成氧化膜的多晶硅层上形成掺有P型杂质的杂质的硅化钨层。

60. 发明授权

US6110772A Semiconductor integrated circuit and manufacturing method thereof 失效
标题翻译：半导体集成电路及其制造方法
公开(公告)号：US6110772A
公开(公告)日：2000-08-29
申请号：US16512
申请日：1998-01-30
申请人： Tadayoshi Takada , Tsuyoshi Takahashi , Yasunari Tagami , Hirotsugu Hata , Satoru Kaneko
发明人： Tadayoshi Takada , Tsuyoshi Takahashi , Yasunari Tagami , Hirotsugu Hata , Satoru Kaneko
IPC分类号： H01L27/04 , H01L21/02 , H01L21/265 , H01L21/822 , H01L27/06 , H01L21/70
CPC分类号： H01L27/0635 , H01L28/20 , H01L28/40
摘要： A semiconductor IC including a resistance element on a circuit substrate. The resistance element includes a resistance layer formed on an insulating layer. The resistance layer is formed using a Si layer obtained by forming an a-Si layer, doping the a-Si layer with impurities, and heating the doped a-Si layer to diffuse the impurities while substantially preserving the fineness of the a-Si layer surface. Preferably, a SiN layer is provided lying beneath the resistance layer. A capacitor may be integrated on the same circuit substrate where the resistance element is formed. In this case, a lower electrode, a SiN dielectric layer, and an upper electrode are formed in this order to constitute a capacitor. The SiN dielectric layer of the capacitor is formed extending from a capacitor formation region to another region, so that the resistance layer of the resistance element is formed on the extending SiN dielectric layer. The lower and upper electrodes of the capacitor may be formed using an a-Si layer, similar to the resistance layer.
摘要翻译：一种在电路基板上包括电阻元件的半导体IC。电阻元件包括形成在绝缘层上的电阻层。电阻层使用通过形成a-Si层获得的Si层，用杂质掺杂a-Si层并加热掺杂的a-Si层以扩散杂质而形成，同时基本上保持a-Si层的细度表面。优选地，设置在电阻层下方的SiN层。电容器可以集成在形成电阻元件的同一电路基板上。在这种情况下，依次形成下电极，SiN电介质层和上电极，构成电容器。电容器的SiN介质层形成为从电容器形成区域延伸到另一区域，使得电阻元件的电阻层形成在延伸的SiN电介质层上。可以使用类似于电阻层的a-Si层来形成电容器的下电极和上电极。

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