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51. 发明申请

US20050094324A1 Integrated spin valve head 失效
公开(公告)号：US20050094324A1
公开(公告)日：2005-05-05
申请号：US11011995
申请日：2004-12-14
申请人： Kochan Ju , Cheng Horng , Youfeng Zheng , Simon Liao , Jei-Wei Chang
发明人： Kochan Ju , Cheng Horng , Youfeng Zheng , Simon Liao , Jei-Wei Chang
IPC分类号： G01R33/09 , B05D7/00 , G11B5/127 , G11B5/187 , G11B5/29 , G11B5/31 , G11B5/33 , G11B5/39 , H01F10/16 , H01F10/30 , H01F10/32 , H01L43/08 , H01L43/12 , H04R31/00
CPC分类号： G11B5/33 , G11B5/29 , G11B5/31 , Y10T29/49037 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： Currently, the shield-to-shield separation of a spin valve head cannot be below about 800 Å, mainly due to sensor-to-lead shorting problems. This problem has now been overcome by inserting a high permeability, high resistivity, thin film shield on the top or bottom (or both) sides of the spin valve sensor. A permeability greater than about 500 is required together with a resistivity about 5 times greater than that of the free layer and an MrT value for the thin film shield that is 4 times greater than that of the free layer. Five embodiments of the invention are described.

52. 发明授权

US06882509B2 GMR configuration with enhanced spin filtering 有权
标题翻译： GMR配置与增强的自旋过滤
公开(公告)号：US06882509B2
公开(公告)日：2005-04-19
申请号：US10791021
申请日：2004-03-02
申请人： Jei-Wei Chang , Bernard Dieny , Mao-Min Chen , Cheng T. Horng , Kochan Ju , Simon Liao
发明人： Jei-Wei Chang , Bernard Dieny , Mao-Min Chen , Cheng T. Horng , Kochan Ju , Simon Liao
IPC分类号： G01R33/09 , G11B5/31 , G11B5/39 , H01F10/00 , H01F10/06 , H01F10/12 , H01F10/14 , H01F10/16 , H01F10/18 , H01F10/30 , H01F10/32 , H01F41/30 , H01L43/08 , H01L43/12 , G11B5/33 , G11B5/127
CPC分类号： H01F10/30 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3133 , G11B5/3903 , G11B5/3909 , H01F10/3272 , H01L43/08 , Y10T428/1121 , Y10T428/1129 , Y10T428/1157 , Y10T428/1171 , Y10T428/12944 , Y10T428/2495
摘要： Disclosed is a method of making a SVGMR sensor element. In the first embodiment a buffer layer is formed between a seed layer and a ferromagnetic (FM) free layer, the buffer layer being composed of alpha-Fe2O3 having a crystal lattice constant that is close to the FM free layer's crystal constant and has the same crystal structure. The metal oxide buffer layer enhances the specular scattering. In the second embodiment, a high conductivity layer (HCL) is formed over the buffer layer to create a spin filter-SVGMR. The HCL layer enhances the GMR ratio of the spin filter SVGMR. The third embodiment include a pinned FM layer comprising a three layer structure of a lower AP layer, a space layer (e.g., Ru) and an upper AP layer.
摘要翻译：公开了一种制造SVGMR传感器元件的方法。在第一实施例中，在种子层和不含铁磁性（FM）的层之间形成缓冲层，该缓冲层由α-Fe 2 O 3 3 N 3 晶格常数接近于FM自由层的晶体常数，具有相同的晶体结构。金属氧化物缓冲层增强了镜面散射。在第二实施例中，在缓冲层上形成高电导率层（HCL）以产生自旋滤波器-GVGMR。 HCL层增强了旋转过滤器SVGMR的GMR比。第三实施例包括包括下AP层的三层结构，空间层（例如Ru）和上AP层的钉扎FM层。

53. 发明授权

US07074456B2 Process for manufacturing a bottom spin valve structure 失效
标题翻译：底部自旋阀结构的制造方法
公开(公告)号：US07074456B2
公开(公告)日：2006-07-11
申请号：US11012001
申请日：2004-12-14
申请人： Kochan Ju , Cheng Horng , Youfeng Zheng , Simon Liao , Jei-Wei Chang
发明人： Kochan Ju , Cheng Horng , Youfeng Zheng , Simon Liao , Jei-Wei Chang
IPC分类号： B05D5/12 , G11B5/127
CPC分类号： G11B5/33 , G11B5/29 , G11B5/31 , Y10T29/49037 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： Currently, the shield-to-shield separation of a spin valve head cannot be below about 800 Å, mainly due to sensor-to-lead shorting problems. This problem has now been overcome by inserting a high permeability, high resistivity, thin film shield on the top or bottom (or both) sides of the spin valve sensor. A permeability greater than about 500 is required together with a resistivity about 5 times greater than that of the free layer and an MrT value for the thin film shield that is 4 times greater than that of the free layer. Five embodiments of the invention are described.
摘要翻译：目前，自旋阀头的屏蔽到屏蔽分离不能低于约800，这主要是由于传感器到引线短路问题。现在已经通过在自旋阀传感器的顶部或底部（或两个）侧上插入高磁导率，高电阻率的薄膜屏蔽来克服这个问题。需要大于约500的磁导率，其电阻率大约为自由层的电阻率的约5倍，薄膜屏蔽层的电阻值大于自由层的4倍层。描述本发明的五个实施例。

54. 发明申请

US20050094326A1 Integrated spin valve head 失效
公开(公告)号：US20050094326A1
公开(公告)日：2005-05-05
申请号：US11012001
申请日：2004-12-14
申请人： Kochan Ju , Cheng Horng , Youfeng Zheng , Simon Liao , Jei-Wei Chang
发明人： Kochan Ju , Cheng Horng , Youfeng Zheng , Simon Liao , Jei-Wei Chang
IPC分类号： G01R33/09 , B05D7/00 , G11B5/127 , G11B5/187 , G11B5/29 , G11B5/31 , G11B5/33 , G11B5/39 , H01F10/16 , H01F10/30 , H01F10/32 , H01L43/08 , H01L43/12 , H04R31/00
CPC分类号： G11B5/33 , G11B5/29 , G11B5/31 , Y10T29/49037 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： Currently, the shield-to-shield separation of a spin valve head cannot be below about 800 Å, mainly due to sensor-to-lead shorting problems. This problem has now been overcome by inserting a high permeability, high resistivity, thin film shield on the top or bottom (or both) sides of the spin valve sensor. A permeability greater than about 500 is required together with a resistivity about 5 times greater than that of the free layer and an MrT value for the thin film shield that is 4 times greater than that of the free layer. Five embodiments of the invention are described.

55. 发明授权

US06885527B1 Process to manufacture a top spin valve 失效
标题翻译：制造顶部自旋阀的工艺
公开(公告)号：US06885527B1
公开(公告)日：2005-04-26
申请号：US09696134
申请日：2000-10-26
申请人： Kochan Ju , Cheng Horng , Youfeng Zheng , Simon Liao , Jei-Wei Chang
发明人： Kochan Ju , Cheng Horng , Youfeng Zheng , Simon Liao , Jei-Wei Chang
IPC分类号： G01R33/09 , B05D7/00 , G11B5/127 , G11B5/187 , G11B5/29 , G11B5/31 , G11B5/33 , G11B5/39 , H01F10/16 , H01F10/30 , H01F10/32 , H01L43/08 , H01L43/12 , H04R31/00
CPC分类号： G11B5/33 , G11B5/29 , G11B5/31 , Y10T29/49037 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： Currently, the shield-to-shield separation of a spin valve head cannot be below about 800 Å, mainly due to sensor-to-lead shorting problems. This problem has now been overcome by inserting a high permeability, high resistivity, thin film shield on the top or bottom (or both) sides of the spin valve sensor. A permeability greater than about 500 is required together with a resistivity about 5 times greater than that of the free layer and an MrT value for the thin film shield that is 4 times greater than that of the free layer. Five embodiments of the invention are described.
摘要翻译：目前，自旋阀头的屏蔽到屏蔽分离不能低于约800，这主要是由于传感器到引线短路问题。现在已经通过在自旋阀传感器的顶部或底部（或两个）侧上插入高磁导率，高电阻率的薄膜屏蔽来克服这个问题。需要大于约500的磁导率，其电阻率大约为自由层的电阻率的约5倍，薄膜屏蔽层的电阻值大于自由层的4倍层。描述本发明的五个实施例。

56. 发明授权

US06594124B2 Canted adjacent layer stabilized SV heads 失效
公开(公告)号：US06594124B2
公开(公告)日：2003-07-15
申请号：US09993402
申请日：2001-11-06
申请人： You Feng Zheng , Kochan Ju , Simon Liao
发明人： You Feng Zheng , Kochan Ju , Simon Liao
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3932 , Y10T428/11 , Y10T428/1121 , Y10T428/1171
摘要： An improved stabilization scheme for a GMR read head is described. Two important changes relative to prior art designs have been introduced. Instead of biasing by means of a permanent magnet or through exchange coupling with an antiferromagnetic layer, the magnetostatic field emanating from a nearby, but not contiguous, layer is used. Additionally, to obtain optimum stability with this scheme the bias, instead of running parallel to the easy axis of the free layer, is canted away from it towards the direction of the demagnetizing field of the pinned layer. A process for the manufacture of the structure is also described.

57. 发明申请

US20050186452A1 CPP GMR and magnetostriction improvement by laminating Co90Fe10 free layer with thin Fe50Co50 layers 有权
标题翻译：通过层压具有薄Fe50Co50层的Co90Fe10自由层的CPP GMR和磁致伸缩改进
公开(公告)号：US20050186452A1
公开(公告)日：2005-08-25
申请号：US10786806
申请日：2004-02-25
申请人： Kunliang Zhang , Min Li , Rachid Sbiaa , Simon Liao , Yue Liu
发明人： Kunliang Zhang , Min Li , Rachid Sbiaa , Simon Liao , Yue Liu
IPC分类号： G11B5/39 , G11B5/127 , H01F10/16 , H01F10/32 , H01L43/08
CPC分类号： G11B5/3903 , Y10T428/1121 , Y10T428/1143 , Y10T428/115
摘要： A current-perpendicular-to-plane (CPP) giant magnetoresistive (GMR) sensor of the synthetic spin valve type and its method of formation are disclosed, the sensor including a novel laminated free layer having ultra-thin (less than 3 angstroms thickness) laminas of Fe50 Co50 (or any iron rich alloy of the form CoxFe1-x with x between 0.25 and 0.75) interspersed with thicker layers of Co90Fe10 and Cu spacer layers to produce a free layer with good coercivity, a coefficient of magnetostriction that can be varied between positive and negative values and a high GMR ratio, due to enhancement of the bulk scattering coefficient by the laminas. The configuration of the lamina and layers in periodic groupings allow the coefficient of magnetostriction to be finely adjusted and the coercivity and GMR ratio to be optimized. The sensor performance can be further improved by including layers of Cu and Fe50Co50 in the synthetic antiferromagnetic pinned layer.
摘要翻译：公开了合成自旋阀型的电流垂直平面（CPP）巨磁阻（GMR）传感器及其形成方法，该传感器包括具有超薄（小于3埃厚度）的新型层叠自由层， Fe O 50 Co 50（或任何形式为Fe x Fe 1-x x的任何富含铁的合金）的薄片与 x在0.25和0.75之间）散布有较厚层的Co 90 N 10 N 10和Cu间隔层，以产生具有良好矫顽力的自由层，可以变化的磁致伸缩系数在正值和负值之间，高GMR比，由于片层散体系的增强。周期性分组中的薄层和层的配置允许精细调节磁致伸缩系数，并优化矫顽力和GMR比。通过在合成的反铁磁性钉扎层中包含Cu和Fe 50 Co 50层，可以进一步提高传感器性能。

58. 发明授权

US07170720B2 CPP read head for high density and shield noise suppression 失效
标题翻译： CPP读头用于高密度和屏蔽噪声抑制
公开(公告)号：US07170720B2
公开(公告)日：2007-01-30
申请号：US10650602
申请日：2003-08-28
申请人： Charles C. Lin , Min Li , Simon Liao
发明人： Charles C. Lin , Min Li , Simon Liao
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3912 , G11B2005/3996
摘要： It is known that the magnetic shields, between which CPP GMR stacks are sandwiched, can be a source of AMR (anisotropic magneto-resistance) noise. This has been significantly reduced by coating both the magnetic shields with highly conductive layers. If the guidelines disclosed in the invention are followed, the read head can exhibit AMR noise reduced by about 14 to 20. Additionally, the total thickness of the read gap can be maintained to be as low as 300 to 400 Angstroms.
摘要翻译：众所周知，其间夹有CPP GMR堆叠的磁屏蔽可以是AMR（各向异性磁阻）噪声的源。通过用高导电层涂覆两个磁屏蔽，这已经大大降低了。如果按照本发明公开的指导原则，读头可以显示降低约14至20的AMR噪声。此外，读取间隙的总厚度可以保持在低至300至400埃。

59. 发明申请

US20060146452A1 CIP GMR enhanced by using inverse GMR material in AP2 审中-公开
标题翻译：通过在AP2中使用逆GMR材料来增强CIP GMR
公开(公告)号：US20060146452A1
公开(公告)日：2006-07-06
申请号：US11028742
申请日：2005-01-04
申请人： Min Li , Simon Liao , Kunliang Zhang , Rachid Sbiaa
发明人： Min Li , Simon Liao , Kunliang Zhang , Rachid Sbiaa
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3903 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , H01F10/3272 , H01F41/302 , H01L43/10
摘要： Improved performance of CIP GMR devices has been achieved by modifying the composition of AP2. Said modification comprises the addition of chromium or vanadium to AP2, while still retaining its ferromagnetic properties. Examples of alloys suitable for use in AP2 include FeCr, NiFeCr, NiCr, CoCr, CoFeCr, and CoFeV. The ruthenium layer normally used to effect antiferromagnetic coupling between AP1 and AP2 is retained.
摘要翻译：通过修改AP2的组成，可以提高CIP GMR器件的性能。所述改性包括向AP2添加铬或钒，同时仍然保留其铁磁性质。适用于AP2的合金的实例包括FeCr，NiFeCr，NiCr，CoCr，CoFeCr和CoFeV。通常用于实现AP1和AP2之间的反铁磁耦合的钌层被保留。

60. 发明申请

US20050047025A1 CPP read head for high density and shield noise suppression 失效
标题翻译： CPP读头用于高密度和屏蔽噪声抑制
公开(公告)号：US20050047025A1
公开(公告)日：2005-03-03
申请号：US10650602
申请日：2003-08-28
申请人： Charles Lin , Min Li , Simon Liao
发明人： Charles Lin , Min Li , Simon Liao
IPC分类号： G11B5/127 , G11B5/33 , G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3912 , G11B2005/3996
摘要： It is known that the magnetic shields, between which CPP GMR stacks are sandwiched, can be a source of AMR (anisotropic magneto-resistance) noise. This has been significantly reduced by coating both the magnetic shields with highly conductive layers. If the guidelines disclosed in the invention are followed, the read head can exhibit AMR noise reduced by about 14 to 20. Additionally, the total thickness of the read gap can be maintained to be as low as 300 to 400 Angstroms.
摘要翻译：众所周知，其间夹有CPP GMR堆叠的磁屏蔽可以是AMR（各向异性磁阻）噪声的源。通过用高导电层涂覆两个磁屏蔽，这已经大大降低了。如果按照本发明公开的指导原则，读头可以显示降低约14至20的AMR噪声。此外，读取间隙的总厚度可以保持在低至300至400埃。

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