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51. 发明授权

US08715520B2 Substrate processing method and storage medium 有权
标题翻译：基板处理方法和存储介质
公开(公告)号：US08715520B2
公开(公告)日：2014-05-06
申请号：US13425551
申请日：2012-03-21
申请人： Takashi Sone , Eiichi Nishimura
发明人： Takashi Sone , Eiichi Nishimura
IPC分类号： C23F1/40
CPC分类号： H01L21/32136 , C23F4/00 , H01J37/32091 , H01L43/12
摘要： There is provided a substrate processing method capable of etching a layer containing, at least, platinum without using a halogen gas. When etching the platinum-manganese layer on a wafer W by using a tantalum (Ta) layer 38 having a certain pattern shape, a processing gas containing, at least, a carbon monoxide gas, a hydrogen gas, and a rare gas is used, and a ratio of a gas flow rate of the hydrogen gas to a total gas flow rate of the carbon monoxide gas and the hydrogen gas is in a range of from about 50% to about 75%.
摘要翻译：提供了能够在不使用卤素气体的情况下蚀刻至少含有铂的层的基板处理方法。当通过使用具有一定图案形状的钽（Ta）层38来蚀刻晶圆W上的铂 - 锰层时，使用至少含有一氧化碳气体，氢气和稀有气体的处理气体，并且氢气的气体流量与一氧化碳气体和氢气的总气体流量的比率在约50％至约75％的范围内。

52. 发明授权

US08608974B2 Substrate processing method 有权
标题翻译：基板加工方法
公开(公告)号：US08608974B2
公开(公告)日：2013-12-17
申请号：US13332531
申请日：2011-12-21
申请人： Eiichi Nishimura
发明人： Eiichi Nishimura
IPC分类号： C23F1/00
CPC分类号： H01L21/02063 , C23F4/00 , H01J37/32091 , H01L21/02068 , H01L21/32136 , H01L21/32138 , H01L21/76805
摘要： There is provided a substrate processing method capable of increasing an etching rate of a copper member without using a halogen gas. A Cu layer 40 having a smoothened surface 50 is obtained, and then, a processing gas produced by adding a methane gas to a hydrogen gas is introduced into an inner space of a processing chamber 15. Plasma is generated from this processing gas. In the inner space of the processing chamber 15, there exist oxygen radicals 52 generated when an oxide layer 42 is etched, and carbon radicals 53 generated from methane. The oxygen radicals 52 and the carbon radicals 53 are compounded to generate an organic acid, and the organic acid makes a reaction with copper atoms of the Cu layer 40. As a result, a complex of the organic acid having the copper atoms is generated, and the generated organic acid complex is vaporized.
摘要翻译：提供了能够在不使用卤素气体的情况下提高铜构件的蚀刻速度的基板处理方法。获得具有平滑表面50的Cu层40，然后将通过将甲烷气体加入到氢气中而产生的处理气体被引入到处理室15的内部空间中。由该处理气体产生等离子体。在处理室15的内部空间中，当蚀刻氧化物层42时产生氧自由基52，以及由甲烷产生的碳自由基53。将氧自由基52和碳基53混合以产生有机酸，并且有机酸与Cu层40的铜原子反应。结果，产生具有铜原子的有机酸的络合物，产生的有机酸络合物蒸发。

53. 发明授权

US08357615B2 Method of manufacturing semiconductor device 有权
公开(公告)号：US08357615B2
公开(公告)日：2013-01-22
申请号：US12216154
申请日：2008-06-30
申请人： Yuki Chiba , Eiichi Nishimura , Ryuichi Asako
发明人： Yuki Chiba , Eiichi Nishimura , Ryuichi Asako
IPC分类号： H01L21/302 , B44C1/22
CPC分类号： H01L21/02063 , H01J37/32522 , H01J2237/2001 , H01L21/3105 , H01L21/31116 , H01L21/31138 , H01L21/76807 , H01L21/76814 , H01L21/76826
摘要： The present invention is an apparatus for manufacturing a semiconductor device comprising: a process vessel including a stage on which a substrate is placed, the substrate having a low dielectric constant film with a resist pattern being formed in an upper layer of the low dielectric constant film; an etching-gas supply unit that supplies an etching gas into the process vessel so as to etch the low dielectric constant film; an ashing-gas unit means that supplies an ashing gas into the process vessel so as to ash the resist pattern formed in the upper layer of the low dielectric constant film after the low dielectric constant film has been subjected to an etching process; a plasma generating means that generates a plasma by supplying an energy to the etching gas and the ashing gas in the process vessel; a unit that supplies a dipivaloylmethane gas into the process vessel, after the low dielectric constant film has been subjected to an ashing process, in order to recover a damage layer of the low dielectric constant film which has been damaged by the plasma; and a heating unit that enables the dipivaloylmethane gas to come into contact with a surface of the substrate under a heated condition.

54. 发明申请

US20120009786A1 PLASMA PROCESSING METHOD AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：等离子体处理方法和半导体器件的制造方法
公开(公告)号：US20120009786A1
公开(公告)日：2012-01-12
申请号：US13178759
申请日：2011-07-08
申请人： Shigeru TAHARA , Eiichi Nishimura , Fumiko Yamashita , Hiroshi Tomita , Tokuhisa Ohiwa , Hisashi Okuchi , Mitsuhiro Omura
发明人： Shigeru TAHARA , Eiichi Nishimura , Fumiko Yamashita , Hiroshi Tomita , Tokuhisa Ohiwa , Hisashi Okuchi , Mitsuhiro Omura
IPC分类号： H01L21/3065
CPC分类号： H01L21/02071
摘要： A plasma processing method in which performing a plasma etching on metal layers formed on a substrate is conducted to form a pattern having the metal layers in a stacked structure, and then a deposit containing a metal that forms the metal layers and being deposited on a sidewall portion of the pattern is removed, the method includes: forming a protective layer by forming an oxide or chloride of the metal on sidewall portions of the metal layers; removing the deposit by applying a plasma of a gas containing fluorine atoms; and reducing the oxide or chloride of the metal by applying a plasma containing hydrogen after forming the protective layer and removing the deposit.
摘要翻译：进行对形成在基板上的金属层进行等离子体蚀刻的等离子体处理方法，以形成具有层叠结构的金属层的图案，然后形成含有形成金属层并沉积在侧壁上的金属的沉积物该方法包括：通过在金属层的侧壁部分上形成金属的氧化物或氯化物形成保护层; 通过施加含有氟原子的气体的等离子体来除去沉积物; 并通过在形成保护层之后施加包含氢的等离子体并除去沉积物来还原金属的氧化物或氯化物。

55. 发明授权

US08043472B2 Substrate processing apparatus and focus ring 有权
标题翻译：基板加工设备和聚焦环
公开(公告)号：US08043472B2
公开(公告)日：2011-10-25
申请号：US12016607
申请日：2008-01-18
申请人： Masaaki Miyagawa , Eiichi Nishimura
发明人： Masaaki Miyagawa , Eiichi Nishimura
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： H01J37/32642 , H01J37/32623
摘要： A substrate processing apparatus that can reliably improve the efficiency of heat transfer between a focus ring and a mounting stage. A housing chamber with the interior thereof evacuated houses a substrate. The substrate is mounted on a mounting stage that is disposed in the housing chamber. An annular focus ring is mounted on the mounting stage such as to surround a peripheral portion of the mounted substrate. A heat transfer film is formed on a surface of the focus ring which contacts the mounting stage by printing processing.
摘要翻译：一种能够可靠地提高聚焦环和安装台之间的热传递效率的基板处理装置。其内部抽真空的容纳室容纳衬底。基板安装在设置在壳体室中的安装台上。环形聚焦环安装在安装台上，以便围绕安装的基板的周边部分。在通过打印处理接触安装台的聚焦环的表面上形成传热膜。

56. 发明授权

US07682517B2 Method of processing substrate, and method of and program for manufacturing electronic device 有权
标题翻译：基板的处理方法，电子器件的制造方法及程序
公开(公告)号：US07682517B2
公开(公告)日：2010-03-23
申请号：US11353132
申请日：2006-02-14
申请人： Eiichi Nishimura , Kenya Iwasaki
发明人： Eiichi Nishimura , Kenya Iwasaki
IPC分类号： B44C1/22
CPC分类号： H01L21/02063 , H01L21/0206 , H01L21/31116 , H01L21/67161 , H01L21/67167 , H01L21/6719 , H01L21/67201 , H01L21/76814 , Y10S438/906
摘要： A method of processing a substrate that enables the amount removed of a surface damaged layer to be controlled easily, and enable a decrease in wiring reliability to be prevented. A surface damaged layer having a reduced carbon concentration of a carbon-containing low dielectric constant insulating film on a substrate is exposed to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure. The surface damaged layer that has been exposed to the atmosphere of the mixed gas is heated to a predetermined temperature.
摘要翻译：一种能够容易地控制表面损伤层去除量的基板的处理方法，能够防止布线可靠性的降低。在基板上的含碳低介电常数绝缘膜的碳浓度降低的表面损伤层在预定压力下暴露于含有氨和氟化氢的混合气体的气氛中。已经暴露于混合气体的气氛的表面损伤层被加热到预定温度。

57. 发明授权

US07532717B2 Echo canceler with automatic gain control of echo cancellation signal 失效
公开(公告)号：US07532717B2
公开(公告)日：2009-05-12
申请号：US09963499
申请日：2001-09-27
申请人： Eiichi Nishimura
发明人： Eiichi Nishimura
IPC分类号： H04M9/08
CPC分类号： H04M9/082
摘要： An echo canceler removes the echo of a receive signal from a transmit signal while also controlling the signal level of the transmit signal. The echo canceler generates signal level data for the transmit signal, updates the signal level data when the transmit signal is active and the receive signal is inactive, and amplifies the transmit signal according to the signal level data. The echo canceler also generates an echo cancellation signal from the receive signal, amplifies the echo cancellation signal according to the signal level data, and subtracts the amplified echo cancellation signal from the amplified transmit signal to obtain a transmit output signal.

58. 发明申请

US20090087991A1 Manufacturing method, manufacturing apparatus, control program and program recording medium of semicontructor device 审中-公开
标题翻译：半导体装置的制造方法，制造装置，控制程序和程序记录介质
公开(公告)号：US20090087991A1
公开(公告)日：2009-04-02
申请号：US12284750
申请日：2008-09-24
申请人： Koichi Yatsuda , Eiichi Nishimura
发明人： Koichi Yatsuda , Eiichi Nishimura
IPC分类号： H01L21/3105
CPC分类号： H01L21/32139 , H01L21/0337
摘要： A manufacturing method of a semiconductor device, which etches a layer to be etched on a substrate into a predetermined pattern based on a first pattern of photoresist produced by exposing and developing a photoresist film, the manufacturing method includes the steps of, patterning an organic membrane based on a first pattern of the photoresist, forming an SiO2 film on the patterned organic membrane, etching the SiO2 film so that the SiO2 remains only in a side wall section of the organic membrane and forming a second pattern of the SiO2 film by removing the organic membrane.
摘要翻译：一种半导体器件的制造方法，其基于通过曝光和显影光致抗蚀剂膜产生的光致抗蚀剂的第一图案将基板上待刻蚀的层蚀刻成预定图案，所述制造方法包括以下步骤：将有机膜图案化基于光致抗蚀剂的第一图案，在图案化有机膜上形成SiO 2膜，蚀刻SiO 2膜，使得SiO 2仅保留在有机膜的侧壁部分中，并通过除去SiO 2膜形成第二图案有机膜。

59. 发明申请

US20080233766A1 ASHING METHOD AND APPARATUS THEREFOR 有权
标题翻译：其方法和装置
公开(公告)号：US20080233766A1
公开(公告)日：2008-09-25
申请号：US12052239
申请日：2008-03-20
申请人： Shigeru Tahara , Eiichi Nishimura , Kumiko Yamazaki
发明人： Shigeru Tahara , Eiichi Nishimura , Kumiko Yamazaki
IPC分类号： H01L21/02 , B05C11/00
CPC分类号： H01L21/67069 , H01J37/32449 , H01J2237/2001 , H01L21/31138
摘要： An ashing method of a target substrate is applied after plasma-etching a part of a low-k film by using a patterned resist film as a mask in a vacuum processing chamber. The method includes a process of removing the resist film in the vacuum processing chamber, and a pre-ashing process, performed prior to the main ashing process, for ashing the target substrate for a time period while maintaining the target substrate at a temperature in a range of from about 80 to 150° C.
摘要翻译：在真空处理室中通过使用图案化的抗蚀剂膜作为掩模等离子体蚀刻低k膜的一部分来施加目标基板的灰化方法。该方法包括去除真空处理室中的抗蚀剂膜的过程，以及在主灰化过程之前进行的预灰化处理，用于在目标衬底处于一定时间期间灰化目标衬底一段时间，同时将靶衬底保持在范围为约80至150℃

60. 发明申请

US20080179292A1 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：基板加工方法和基板加工装置
公开(公告)号：US20080179292A1
公开(公告)日：2008-07-31
申请号：US12014540
申请日：2008-01-15
申请人： Eiichi Nishimura , Chie Kato , Jun Yamawaku
发明人： Eiichi Nishimura , Chie Kato , Jun Yamawaku
IPC分类号： C23F1/02 , H01L21/306
CPC分类号： H01L21/31116
摘要： A substrate processing method that can remove a silicon nitride film without damaging a thermally-oxidized film. A substrate having at least a thermally-oxidized film and a silicon nitride film formed on the thermally-oxidized film is heated to a temperature of not less than 60° C. Then, hydrogen fluoride gas is supplied toward the substrate.
摘要翻译：可以去除氮化硅膜而不损坏热氧化膜的基板处理方法。将在热氧化膜上形成有至少具有热氧化膜和氮化硅膜的基板加热至不低于60℃的温度。然后向基板供给氟化氢气体。

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