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51. 发明授权

US07254428B2 Blood sugar level measuring apparatus 有权
标题翻译：血糖测量仪
公开(公告)号：US07254428B2
公开(公告)日：2007-08-07
申请号：US10813029
申请日：2004-03-31
申请人： Ok-Kyung Cho , Yoon-Ok Kim , Nobuhiko Sato , Hiroshi Mitsumaki
发明人： Ok-Kyung Cho , Yoon-Ok Kim , Nobuhiko Sato , Hiroshi Mitsumaki
IPC分类号： A61B5/00
CPC分类号： A61B5/1455 , A61B5/01 , A61B5/14532 , A61B5/6826 , A61B5/6838 , A61B5/6844 , A61B5/6886
摘要： Blood sugar levels are measured non-invasively based on temperature measurement. Non-invasively measured blood sugar level values obtained by a temperature measurement scheme are corrected by blood oxygen saturation and blood flow volume, thereby stabilizing the measurement data. A guide is provided for guiding an analyte to a measurement portion.
摘要翻译：基于温度测量，非侵入性地测量血糖水平。通过血氧饱和度和血流量校正由温度测量方案获得的非侵入式测量的血糖值，从而稳定测量数据。提供了用于将分析物引导到测量部分的引导件。

52. 发明授权

US07164183B2 Semiconductor substrate, semiconductor device, and method of manufacturing the same 有权
标题翻译：半导体衬底，半导体器件及其制造方法
公开(公告)号：US07164183B2
公开(公告)日：2007-01-16
申请号：US10857881
申请日：2004-06-02
申请人： Kiyofumi Sakaguchi , Nobuhiko Sato
发明人： Kiyofumi Sakaguchi , Nobuhiko Sato
IPC分类号： H01L29/00
CPC分类号： H01L29/785 , H01L21/02381 , H01L21/0245 , H01L21/02513 , H01L21/02532 , H01L21/306 , H01L29/66795 , H01L29/7842
摘要： A semiconductor device includes a porous layer, a structure which is formed on the porous layer and has a semiconductor region whose height of the sectional shape is larger than the width, and a strain inducing region which strains the structure by applying stress to it.
摘要翻译：半导体器件包括多孔层，形成在多孔层上并且具有截面形状的高度大于宽度的半导体区域的结构，以及通过施加应力而使结构变形的应变诱导区域。

53. 发明申请

US20060113635A1 Semiconductor member, manufacturing method thereof, and semiconductor device 失效
标题翻译：半导体元件及其制造方法以及半导体器件
公开(公告)号：US20060113635A1
公开(公告)日：2006-06-01
申请号：US10540261
申请日：2004-12-14
申请人： Kazuya Notsu , Kiyofumi Sakaguchi , Nobuhiko Sato , Hajime Ikeda , Shoji Nishida
发明人： Kazuya Notsu , Kiyofumi Sakaguchi , Nobuhiko Sato , Hajime Ikeda , Shoji Nishida
IPC分类号： H01L21/20 , H01L31/117
CPC分类号： H01L29/78687 , H01L21/02381 , H01L21/0245 , H01L21/02455 , H01L21/02502 , H01L21/02513 , H01L21/0262 , H01L21/76259 , H01L29/1054
摘要： An SiGe layer is grown on a silicon substrate. The SiGe layer or the silicon substrate and SiGe layer are porosified by anodizing the SiGe layer to form a strain induction porous layer or a porous silicon layer and strain induction porous layer. An SiGe layer and strained silicon layer are formed on the resultant structure. The SiGe layer in the stacking growth step only needs to be on the uppermost surface of the porous layer. For this reason, an SiGe layer with a low defect density and high concentration can be formed. Since the SiGe layer on the strain induction porous layer can achieve a low defect density without lattice mismatching. Hence, a high-quality semiconductor substrate having a high strained silicon layer can be obtained.
摘要翻译： SiGe层生长在硅衬底上。 SiGe层或硅衬底和SiGe层通过对SiGe层进行阳极氧化以形成应变感应多孔层或多孔硅层和应变感应多孔层而被开孔化。在所得结构上形成SiGe层和应变硅层。层叠生长步骤中的SiGe层仅需要在多孔层的最上表面上。因此，可以形成具有低缺陷密度和高浓度的SiGe层。由于应变感应多孔层上的SiGe层可以实现低缺陷密度而没有晶格失配。可以获得具有高应变硅层的高质量半导体衬底。

54. 发明申请

US20060070884A1 Electrochemical processing apparatus and method 审中-公开
标题翻译：电化学处理装置及方法
公开(公告)号：US20060070884A1
公开(公告)日：2006-04-06
申请号：US11245912
申请日：2005-10-06
申请人： Kazutaka Momoi , Kazutaka Yanaqita , Nobuhiko Sato
发明人： Kazutaka Momoi , Kazutaka Yanaqita , Nobuhiko Sato
IPC分类号： C25D5/02
CPC分类号： C25D17/10 , C25D5/02 , C25D11/005 , C25D11/02
摘要： A processing apparatus electrochemically processes part of a first surface of a member having the first surface and a second surface. The processing apparatus includes a support which supports the member to expose the first surface, a first electrode which is arranged to oppose a first portion of the first surface, a second electrode which is arranged to oppose a second portion of the first surface, a third electrode which applies a potential to the member from a second surface side, and a processing bath to fill a space defined by the first and second electrodes and the member with a processing liquid.
摘要翻译：一种处理装置，电化学处理具有第一表面和第二表面的构件的第一表面的一部分。处理装置包括支撑构件以露出第一表面的支撑件，布置成与第一表面的第一部分相对的第一电极，布置成与第一表面的第二部分相对的第二电极，第三电极电极，其从第二表面侧向构件施加电位;以及处理槽，用处理液填充由第一和第二电极和构件限定的空间。

55. 发明申请

US20060049723A1 Method for producing piezoelectric film actuator, and composite structure having piezoelectric layer 失效
标题翻译：用于制造压电薄膜致动器的方法和具有压电层的复合结构
公开(公告)号：US20060049723A1
公开(公告)日：2006-03-09
申请号：US11218515
申请日：2005-09-06
申请人： Takehito Okabe , Nobuhiko Sato , Makoto Kurotobi , Kenichi Takeda , Toshihiro Ifuku
发明人： Takehito Okabe , Nobuhiko Sato , Makoto Kurotobi , Kenichi Takeda , Toshihiro Ifuku
IPC分类号： H01L41/08
CPC分类号： B41J2/161 , B41J2/1623 , B41J2/1628 , B41J2/1629 , B41J2/1632 , B41J2/1642 , B41J2/1643 , B41J2/1646 , H01L41/1876 , H01L41/332 , Y10T29/42 , Y10T29/435 , Y10T29/49126 , Y10T29/49128 , Y10T29/4913 , Y10T29/49155
摘要： A method for producing a piezoelectric film actuator is provided. This method includes the steps of preparing an intermediate transfer member having a porous layer formed thereon, with a vibrating plate and a piezoelectric layer being provided on the porous layer; bonding the vibrating plate to a nozzle substrate to form a composite structure; and separating the intermediate transfer member from the composite structure at the porous layer to transfer the vibrating plate and the piezoelectric layer to the nozzle substrate.
摘要翻译：提供了一种制造压电膜致动器的方法。该方法包括以下步骤：制备其上形成有多孔层的中间转印部件，其中振动板和压电层设置在多孔层上; 将振动板接合到喷嘴基板以形成复合结构; 并在所述多孔层处从所述复合结构分离所述中间转印部件，以将所述振动板和所述压电层转印到所述喷嘴基板。

56. 发明授权

US06828214B2 Semiconductor member manufacturing method and semiconductor device manufacturing method 失效
标题翻译：半导体元件制造方法及半导体器件的制造方法
公开(公告)号：US06828214B2
公开(公告)日：2004-12-07
申请号：US10112751
申请日：2002-04-02
申请人： Kazuya Notsu , Nobuhiko Sato
发明人： Kazuya Notsu , Nobuhiko Sato
IPC分类号： H01L2130
CPC分类号： H01L21/76259 , Y10T428/12674 , Y10T428/24802 , Y10T428/24917 , Y10T428/249953
摘要： This invention provides an SOI substrate manufacturing method using a transfer method (bonding and separation). A separation layer (12) is formed on a silicon substrate (11). A silicon layer (13), SiGe layer (14), silicon layer (15′), and insulating layer (21) are sequentially formed on the resultant structure to prepare a first substrate (10′). This first substrate (10′) is bonded to a second substrate (30). The bonded substrate stack is separated into two parts at the separation layer (12). Next, Ge in the SiGe layer (14) is diffused into the silicon layer (13) by hydrogen annealing. With this process, a strained SOI substrate having the SiGe layer on the insulating layer (21) and a strained silicon layer on the SiGe layer is obtained.
摘要翻译：本发明提供一种使用转印方法（接合和分离）的SOI衬底制造方法。在硅衬底（11）上形成分离层（12）。在所得结构上依次形成硅层（13），SiGe层（14），硅层（15'）和绝缘层（21），以制备第一衬底（10'）。该第一基板（10'）结合到第二基板（30）上。键合衬底叠层在分离层（12）处分成两部分。接下来，SiGe层（14）中的Ge通过氢退火扩散到硅层（13）中。通过该工艺，可以获得在绝缘层（21）上具有SiGe层的应变SOI衬底和SiGe层上的应变硅层。

57. 发明授权

US06667812B1 Information processing apparatus with device control language based program selection 失效
标题翻译：具有设备控制语言的程序选择的信息处理设备
公开(公告)号：US06667812B1
公开(公告)日：2003-12-23
申请号：US08076785
申请日：1993-06-15
申请人： Nobuhiko Sato , Satoshi Nagata , Yoshifumi Okamoto , Tetsuya Morita , Akihiro Shimura , Shunya Mitsuhashi , Takanori Nishijima , Masaki Unishi
发明人： Nobuhiko Sato , Satoshi Nagata , Yoshifumi Okamoto , Tetsuya Morita , Akihiro Shimura , Shunya Mitsuhashi , Takanori Nishijima , Masaki Unishi
IPC分类号： G06K1500
CPC分类号： G06F3/1204 , G06F3/1206 , G06F3/1224 , G06F3/1226 , G06F3/1232 , G06F3/1244 , G06F3/1284
摘要： An information processing apparatus acquires identification information which specifies an interpreting program for interpreting a device control language, the specified interpreting program being operable in an external device connected to the information processing apparatus. It is discriminated whether a selected first control program corresponds to the device control language interpreted by the specified interpreting program. If it is discriminated that the selected first control program does not correspond to the device control language interpreted by the specified interpreting program, a second control program corresponding to the device control language interpreted by the specified interpreting program is selected from a plurality of control programs. Data is output to the external device using the first control program or, if it is discriminated that the first control program does not correspond to the device control language, the selected second control program.
摘要翻译：信息处理设备获取指定用于解释设备控制语言的解释程序的识别信息，所指定的解释程序可在连接到信息处理设备的外部设备中操作。鉴别所选择的第一控制程序是否对应于由指定解释程序解释的设备控制语言。如果识别出所选择的第一控制程序与由指定的解释程序解释的设备控制语言不对应，则从多个控制程序中选择与由指定的解释程序解释的设备控制语言相对应的第二控制程序。使用第一控制程序将数据输出到外部设备，或者如果识别出第一控制程序不对应于设备控制语言，则选择的第二控制程序。

58. 发明授权

US06660606B2 Semiconductor-on-insulator annealing method 失效
标题翻译：绝缘子半导体退火方法
公开(公告)号：US06660606B2
公开(公告)日：2003-12-09
申请号：US09963449
申请日：2001-09-27
申请人： Hiroshi Miyabayashi , Nobuhiko Sato , Masataka Ito
发明人： Hiroshi Miyabayashi , Nobuhiko Sato , Masataka Ito
IPC分类号： H01L21336
CPC分类号： H01L21/76259
摘要： The number of defects (HF defects) in the SOI layer of an SOI substrate is reduced. In an annealing method of annealing an SOI substrate in a reducing atmosphere at a temperature equal to or less than the melting point of a semiconductor, annealing is executed in a state wherein a flow of a reducing atmospheric gas parallel to the surface of the SOI substrate is generated near this surface.
摘要翻译： SOI衬底的SOI层中的缺陷数（HF缺陷）减少。在还原性气氛中，在半导体的熔点以下的温度退火SOI衬底的退火方法中，在与SOI衬底的表面平行的还原气氛气体的流动的状态下进行退火在该表面附近产生。

59. 发明授权

US06616552B2 Golf ball 有权
标题翻译：高尔夫球
公开(公告)号：US06616552B2
公开(公告)日：2003-09-09
申请号：US09534565
申请日：2000-03-27
申请人： Rinya Takesue , Yasushi Ichikawa , Shunichi Kashiwagi , Nobuhiko Sato
发明人： Rinya Takesue , Yasushi Ichikawa , Shunichi Kashiwagi , Nobuhiko Sato
IPC分类号： A63B3712
CPC分类号： A63B37/12 , A63B37/0003 , A63B37/0024 , A63B37/0031 , A63B37/0033 , A63B37/0035 , A63B37/0045 , A63B37/0047 , A63B37/0052 , A63B37/0074 , A63B37/0075 , A63B37/0076 , A63B37/008 , A63B37/0083 , A63B37/0084
摘要： In a golf ball including a core and a cover of at least one layer, the cover layer is formed of a heated mixture of an ionomer resin and a metal salt such as magnesium stearate. The heated mixture exhibits such a crystal melting behavior that when measured by DSC, the difference between first and second peak temperature is up to 30° C. The ball is improved in resilience.
摘要翻译：在包括芯和至少一层的覆盖物的高尔夫球中，覆盖层由离聚物树脂和金属盐如硬脂酸镁的加热混合物形成。加热的混合物表现出这样的晶体熔融行为，当通过DSC测量时，第一和第二峰值温度之间的差异达到30℃。弹性提高了球。

60. 发明授权

US06593211B2 Semiconductor substrate and method for producing the same 失效
标题翻译：半导体衬底及其制造方法
公开(公告)号：US06593211B2
公开(公告)日：2003-07-15
申请号：US09390283
申请日：1999-09-03
申请人： Nobuhiko Sato
发明人： Nobuhiko Sato
IPC分类号： H01L2130
CPC分类号： H01L21/02381 , H01L21/0245 , H01L21/02513 , H01L21/02532 , H01L21/0262 , H01L21/02661 , H01L21/76259
摘要： There are disclosed a semiconductor substrate having a non-porous monocrystalline layer with reduced crystal defects on a porous silicon layer and a method of forming the substrate. The forming method comprises a heat treatment step of heat-treating a porous silicon layer in an atmosphere not containing a silicon-based gas and the step of growing a non-porous monocrystalline layer on the porous silicon layer, wherein the heat treatment is conducted under the conditions such that the etched thickness of the silicon layer is 2 nm or less and that the rate of change r of the surface pore density of the porous silicon layer (r=surface pore density after heat treatment/surface pore density before heat treatment) satisfies the relationship 1/10000≦r≦1.
摘要翻译：公开了一种半导体衬底，其具有在多孔硅层上具有减小的晶体缺陷的非多孔单晶层和形成衬底的方法。成形方法包括热处理步骤，其在大气中热处理多孔硅层含有硅基气体的步骤以及在所述多孔硅层上生长无孔单晶层的步骤，其中所述热处理在所述硅层的蚀刻厚度为2nm以下的条件下进行，的多孔硅层的表面孔密度的变化率r（r =热处理后的表面孔密度/热处理前的表面孔密度）满足1/10000 <= r <1的关系。

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