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51. 发明授权

US08883405B2 Method for forming pattern 有权
标题翻译：形成图案的方法
公开(公告)号：US08883405B2
公开(公告)日：2014-11-11
申请号：US13595244
申请日：2012-08-27
申请人： Eishi Shiobara
发明人： Eishi Shiobara
IPC分类号： G03F7/20
CPC分类号： G03F7/0046 , G03F7/0045 , G03F7/095 , G03F7/16
摘要： According to one embodiment, a method is disclosed for forming a pattern. The method can include forming a resist film above a subject. The resist film includes a photosensitive material. The resist film has a concentration profile having a concentration of the photosensitive material being higher on a side of a bottom of the resist film than on a side of a surface of the resist film. A portion of the resist film has a maximum concentration of the photosensitive material existing closer to the side of the bottom than a center of the resist film in a thickness direction. The method can include irradiating the resist film with a light from the side of the surface. The method can include developing the resist film after the resist film being irradiated with the light.
摘要翻译：根据一个实施例，公开了一种用于形成图案的方法。该方法可以包括在受试者上方形成抗蚀剂膜。抗蚀剂膜包括感光材料。抗蚀剂膜具有在抗蚀剂膜的底部的一侧的感光材料的浓度高于抗蚀剂膜的表面侧的浓度分布。抗蚀剂膜的一部分在厚度方向上具有比抗蚀剂膜的中心更靠近底部的感光材料的最大浓度。该方法可以包括用来自表面一侧的光照射抗蚀剂膜。该方法可以包括在抗蚀剂膜被光照射之后显影抗蚀剂膜。

52. 发明授权

US08198005B2 Method of forming resist pattern 有权
标题翻译：形成抗蚀剂图案的方法
公开(公告)号：US08198005B2
公开(公告)日：2012-06-12
申请号：US12404917
申请日：2009-03-16
申请人： Eishi Shiobara , Shinichi Ito
发明人： Eishi Shiobara , Shinichi Ito
IPC分类号： G03F7/00 , G03F7/20 , G03B27/52
CPC分类号： G03F7/38 , G03F7/168 , G03F7/70525 , G03F7/7075 , G03F7/70808 , G03F7/70841 , G03F7/70866
摘要： Provided is a method of forming a resist pattern capable of forming a resist pattern, whose dimensional variations and defects are reduced as far as possible, with a high throughput. The invention provides a method of forming a resist pattern involving the following: forming a resist film on a substrate; subjecting the resist film to exposure treatment in a pressure-reduced condition after performing pressure-reducing treatment; performing reduced-pressure releasing treatment that releases the resist film from a pressure-reduced condition while humidifying the resist film by introducing a humidity-adjusted gas into the pressure-reduced environment; performing bake treatment that heats the resist film after the reduced-pressure releasing treatment; and developing the resist film.
摘要翻译：提供了一种形成能够形成抗蚀剂图案的抗蚀剂图案的方法，该抗蚀剂图案的尺寸变化和缺陷尽可能地降低，生产量高。本发明提供一种形成抗蚀剂图案的方法，其包括以下步骤：在基材上形成抗蚀剂膜; 在进行减压处理后，在减压条件下对抗蚀剂膜进行曝光处理; 进行减压释放处理，其通过将经调湿的气体引入减压环境中而将抗蚀剂膜从减压状态释放，同时对抗蚀剂膜进行加湿; 进行减压处理后加热抗蚀剂膜的烘烤处理; 并开发抗蚀膜。

53. 发明授权

US08097398B2 Method for manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US08097398B2
公开(公告)日：2012-01-17
申请号：US12477744
申请日：2009-06-03
申请人： Takehiro Kondoh , Eishi Shiobara
发明人： Takehiro Kondoh , Eishi Shiobara
IPC分类号： G03F7/00 , G03F7/004 , G03F7/26 , G03F7/40
CPC分类号： G03F7/40 , H01L21/0273 , H01L21/0337 , H01L21/0338 , Y10S430/106 , Y10S430/114
摘要： In the method for manufacturing a semiconductor device, a resist film is formed on a substrate and is processed to be provided with openings to form a first resist pattern. Additive-containing layers containing an additive that changes a state of the resist film to a soluble state for a developer are formed so as to cover the first resist pattern. A first resin film having a nature of changing to a soluble state for the developer by containing the additive is formed in the openings of the first resist pattern. The additive is diffused into the first resist pattern and the first resin film to form first and second additive-diffusing portions which can be solved in the developer. The first and second additive-diffusing portions are removed by the developer to form second resist pattern made of remaining portions in the first resist pattern and the first resin film.
摘要翻译：在制造半导体器件的方法中，在衬底上形成抗蚀剂膜，并且加工成具有开口以形成第一抗蚀剂图案。形成含有将抗蚀剂膜的状态改变为显影剂的可溶性状态的添加剂的含有添加剂层，以覆盖第一抗蚀剂图案。在第一抗蚀剂图案的开口中形成具有通过含有添加剂而改变为显影剂的可溶性状态的第一树脂膜。添加剂扩散到第一抗蚀剂图案和第一树脂膜中以形成可以溶解在显影剂中的第一和第二添加剂扩散部分。通过显影剂去除第一和第二添加剂扩散部分，以形成由第一抗蚀剂图案和第一树脂膜中的剩余部分制成的第二抗蚀剂图案。

54. 发明申请

US20110229826A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD TO FORM RESIST PATTERN, AND SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：用于形成电阻图案的半导体器件制造方法和基板处理装置
公开(公告)号：US20110229826A1
公开(公告)日：2011-09-22
申请号：US13118779
申请日：2011-05-31
申请人： Daisuke KAWAMURA , Eishi Shiobara , Tomoyuki Takeishi , Kei Hayasaki , Yasunobu Onishi , Shinichi Ito , Tatsuhiko Higashiki
发明人： Daisuke KAWAMURA , Eishi Shiobara , Tomoyuki Takeishi , Kei Hayasaki , Yasunobu Onishi , Shinichi Ito , Tatsuhiko Higashiki
IPC分类号： G03F7/20
CPC分类号： G03F7/70925 , G03F7/70341
摘要： This invention discloses a method to form a resist pattern on a to-be-processed substrate by immersion exposure. A resist film is formed on the central portion of the upper surface of the to-be-processed substrate, on a bevel portion of the upper surface, which is obtained by chamfering the peripheral portion of the to-be-processed substrate, and on the end portion of the to-be-processed substrate. Pattern exposure for forming the latent image of a desired pattern on the resist film is executed while a liquid whose refractive index is higher than that of air exists between the resist film and a constituent element of a projection optical system of an exposure apparatus, which is nearest to the to-be-processed substrate. The resist film formed on the end portion of the to-be-processed substrate is removed by supplying a rinse solution to the end portion of the to-be-processed substrate after executing pattern exposure.
摘要翻译：本发明公开了一种通过浸渍曝光在待处理衬底上形成抗蚀剂图案的方法。在被处理基板的上表面的中央部，在上表面的斜面部分上形成抗蚀剂膜，该斜面部分是通过倒角被处理基板的周边部分而得到的，待处理衬底的端部。在抗蚀剂膜和曝光装置的投影光学系统的构成元素之间存在折射率高于空气的液体的情况下，在抗蚀剂膜上形成期望图案的潜像的图案曝光，其为最接近被处理衬底。在执行图案曝光之后，通过向被处理基板的端部供给冲洗液，除去形成在被处理基板的端部的抗蚀剂膜。

55. 发明授权

US07687279B2 Evaluation method for chemical solution, qualification method for chemical solution and method for manufacturing semiconductor device 失效
标题翻译：化学溶液的评价方法，化学溶液的鉴定方法以及半导体装置的制造方法
公开(公告)号：US07687279B2
公开(公告)日：2010-03-30
申请号：US11105362
申请日：2005-04-14
申请人： Shinichi Ito , Eishi Shiobara
发明人： Shinichi Ito , Eishi Shiobara
IPC分类号： G01N33/00
CPC分类号： G01N15/02 , G01N2015/0053 , Y10T436/25 , Y10T436/2575
摘要： A method for evaluating chemical solution includes determining number of particles in liquid for each size of the particles by measurement, expressing a relationship between size of the particles and number of particles corresponding to the size by a function based on the number of particles for each size of the particles determined by the measurement, and evaluating influence of particles having size less than or equal to a measurement limit in the liquid based on the function.
摘要翻译：用于评估化学溶液的方法包括通过测量确定每种尺寸的颗粒的液体中的颗粒数量，通过基于每种尺寸的颗粒数量来表示颗粒尺寸与颗粒尺寸之间的关系与基于颗粒数的函数关系通过测量确定的颗粒，并且基于该功能评估液体中尺寸小于或等于测量极限的颗粒的影响。

56. 发明授权

US07662542B2 Pattern forming method and semiconductor device manufacturing method 失效
标题翻译：图案形成方法和半导体器件制造方法
公开(公告)号：US07662542B2
公开(公告)日：2010-02-16
申请号：US11342048
申请日：2006-01-30
申请人： Eishi Shiobara , Takehiro Kondoh , Yuji Kobayashi , Koutarou Sho
发明人： Eishi Shiobara , Takehiro Kondoh , Yuji Kobayashi , Koutarou Sho
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/40 , H01L21/0273 , H01L21/0276 , H01L21/3088 , Y10S430/151
摘要： A pattern forming method includes the following steps. A resist pattern is formed on a to-be-processed film. A mask pattern including the resist pattern and a resin film formed on a surface of the resist pattern is formed. Slimming of the mask pattern is executed.
摘要翻译：图案形成方法包括以下步骤。在被处理膜上形成抗蚀剂图案。形成包括形成在抗蚀图案的表面上的抗蚀剂图案和树脂膜的掩模图案。执行掩模图案的减肥。

57. 发明授权

US07368209B2 Method for evaluating sensitivity of photoresist, method for preparation of photoresist and manufacturing method of semiconductor device 有权
标题翻译：光刻胶的灵敏度评价方法，光刻胶的制备方法及半导体装置的制造方法
公开(公告)号：US07368209B2
公开(公告)日：2008-05-06
申请号：US10855380
申请日：2004-05-28
申请人： Eishi Shiobara , Kei Hayasaki , Tadahito Fujisawa , Shinichi Ito
发明人： Eishi Shiobara , Kei Hayasaki , Tadahito Fujisawa , Shinichi Ito
IPC分类号： G03C5/00 , G03F9/00
CPC分类号： G03F7/70608
摘要： An method for evaluating sensitivity of a photoresist includes transferring an exposure dose monitor mark onto an inspection resist film with an inspection setting exposure dose using an exposure tool. Inspection sensitivity index varying according to the inspection setting exposure dose is measured, using an inspection transferred image of the exposure dose monitor mark delineated on the inspection resist film. An inspection photoresist sensitivity of the inspection resist film is calculated using sensitivity calibration data, based on the inspection sensitivity index.
摘要翻译：用于评估光致抗蚀剂的灵敏度的方法包括使用曝光工具以曝光剂量的曝光剂量将曝光剂量监测标记转移到检查抗蚀剂膜上。使用在检查抗蚀剂膜上划定的曝光剂量监视标记的检查转印图像，测量根据检查设定曝光剂量而变化的检查灵敏度指数。基于检查灵敏度指数，使用灵敏度校准数据计算检查抗蚀剂膜的检查光致抗蚀剂敏感性。

58. 发明申请

US20080073286A1 Waste liquid processing method in semiconductor manufacturing process and substrate processing apparatus 审中-公开
标题翻译：半导体制造工艺中的废液处理方法及基板处理装置
公开(公告)号：US20080073286A1
公开(公告)日：2008-03-27
申请号：US11902452
申请日：2007-09-21
申请人： Eishi Shiobara
发明人： Eishi Shiobara
IPC分类号： B05C11/10 , C02F1/00
CPC分类号： G05D11/133 , C02F1/008 , C02F2103/346
摘要： This invention discloses a waste liquid processing method in a semiconductor manufacturing process. The waste liquids of a plurality of chemical solutions are mixed. The mixing ratio of the plurality of solutions in a waste liquid mixture generated by mixing is obtained. It is determined whether the obtained mixing ratio satisfies or is predicted not to satisfy a predetermined condition. If the mixing ratio does not satisfy or is predicted not to satisfy the condition, the waste liquid mixture is diluted with a diluent to satisfy the condition.
摘要翻译：本发明公开了一种半导体制造工序中的废液处理方法。将多种化学溶液的废液混合。获得通过混合产生的废液混合物中的多种溶液的混合比。确定所获得的混合比是否满足或被预测为不满足预定条件。如果混合比不满足或预测不满足条件，则用稀释剂稀释废液混合物以满足条件。

59. 发明申请

US20070266936A1 Substrate processing apparatus and method 审中-公开
标题翻译：基板加工装置及方法
公开(公告)号：US20070266936A1
公开(公告)日：2007-11-22
申请号：US11798132
申请日：2007-05-10
申请人： Eishi Shiobara , Hirokazu Kato , Seiro Miyoshi , Shinichi Ito
发明人： Eishi Shiobara , Hirokazu Kato , Seiro Miyoshi , Shinichi Ito
IPC分类号： B05C11/02
CPC分类号： H01L21/67253 , H01L21/67051 , H01L21/6715
摘要： A substrate-processing apparatus includes a sample table which mounts thereon a to-be-processed substrate, a first line which supplies a chemical solution, a second line which supplies a cleaning liquid, a three-way valve connected to the first and second lines and configured to select one of the first and second lines, a filter provided across the first line upstream of the three-way valve, and configured to eliminate a foreign material from the chemical solution, and a nozzle provided downstream of the three-way valve and configured to discharge the chemical solution or the cleaning liquid when the first or second line is selected via the three-way valve. The three-way valve selects the first line when the substrate is coated with the chemical solution, and selects the second line in other cases.
摘要翻译：基板处理装置包括安装在被处理基板上的样品台，供给化学溶液的第一管线，供给清洗液的第二管线，与第一管路和第二管路连接的三通阀并且构造成选择第一和第二管线中的一个，设置在三通阀上游的第一线上的过滤器，并且被配置为从化学溶液中除去异物，以及设置在三通阀下游的喷嘴并且构造成当通过三通阀选择第一或第二管线时，排出化学溶液或清洗液体。当基材涂有化学溶液时，三通阀选择第一行，在其他情况下选择第二行。

60. 发明申请

US20060189147A1 Pattern forming method and semiconductor device manufacturing method 失效
标题翻译：图案形成方法和半导体器件制造方法
公开(公告)号：US20060189147A1
公开(公告)日：2006-08-24
申请号：US11342048
申请日：2006-01-30
申请人： Eishi Shiobara , Takehiro Kondoh , Yuji Kobayashi , Koutarou Sho
发明人： Eishi Shiobara , Takehiro Kondoh , Yuji Kobayashi , Koutarou Sho
IPC分类号： G03C1/76 , H01L21/302
CPC分类号： G03F7/40 , H01L21/0273 , H01L21/0276 , H01L21/3088 , Y10S430/151
摘要： A pattern forming method includes the following teps. A resist pattern is formed on a to-be-processed film. A mask pattern including the resist pattern and a resin film formed on a surface of the resist pattern is formed. Slimming of the mask pattern is executed.
摘要翻译：图案形成方法包括以下脚趾。在被处理膜上形成抗蚀剂图案。形成包括形成在抗蚀图案的表面上的抗蚀剂图案和树脂膜的掩模图案。执行掩模图案的减肥。

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