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51. 发明申请

US20060216220A1 Method for manufacturing diamond single crystal substrate, and diamond single crystal substrate 有权
标题翻译：金刚石单晶基板的制造方法和金刚石单晶基板
公开(公告)号：US20060216220A1
公开(公告)日：2006-09-28
申请号：US11388970
申请日：2006-03-27
申请人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
发明人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
IPC分类号： B01J3/06 , C01B31/06 , C23C16/00
CPC分类号： C30B25/02 , C30B25/18 , C30B29/04
摘要： A method for manufacturing a diamond single crystal substrate, in which a single crystal is grown from a diamond single crystal serving as a seed substrate by vapor phase synthesis, said method comprising: preparing a diamond single crystal seed substrate which has a main surface whose planar orientation falls within an inclination range of not more than 8 degrees relative to a {100} plane or a {111} plane, as a seed substrate; forming a plurality of planes of different orientation which are inclined in the outer peripheral direction of the main surface relative to the main surface on one side of this seed substrate, by machining; and then growing a diamond single crystal by vapor phase synthesis.
摘要翻译：一种用于制造金刚石单晶衬底的方法，其中通过气相合成从用作种子衬底的金刚石单晶生长单晶，所述方法包括：制备金刚石单晶种子衬底，其具有主表面，其平面作为种子基材，相对于{100}面或{111}面，取向落入不大于8度的倾斜范围内; 通过机械加工形成在主面的外周方向相对于该种籽基板的一侧的主面倾斜的多个不同取向的面; 然后通过气相合成生长金刚石单晶。

52. 发明申请

US20060213428A1 Diamond substrate and manufacturing method thereof 失效
标题翻译：金刚石基板及其制造方法
公开(公告)号：US20060213428A1
公开(公告)日：2006-09-28
申请号：US11390333
申请日：2006-03-28
申请人： Kiichi Meguro , Keisuke Tanizaki , Akihiko Namba , Yoshiyuki Yamamoto , Takahiro Imai
发明人： Kiichi Meguro , Keisuke Tanizaki , Akihiko Namba , Yoshiyuki Yamamoto , Takahiro Imai
IPC分类号： C30B25/00
CPC分类号： C30B25/105 , C30B25/02 , C30B25/20 , C30B29/04 , H01L21/02381 , H01L21/0243 , H01L21/02527 , H01L21/0262 , H01L21/02645
摘要： The present invention provides a manufacturing method for a large-scale diamond substrate and a substrate produced by the method suitable for semiconductor lithography processing and large-scale optical parts, semiconductor materials, thermal-release substrate, semiconductor wafer processing, and back-feed devices, and others. The manufacturing method for a diamond substrate of the present invention comprises: the mounting step of preparing a substrate having a main face comprising a first region which is a concave and having a second region which surrounds the first region, and mounting, on the first region, a single crystalline diamond seed substrate having a plate thickness thicker than the concave depth of the first region; a connecting step of forming a CVD diamond layer from the single crystalline diamond seed substrate using a chemical vapor deposition, and mutually connecting by forming a CVD diamond layer on the second region at the same time; and a polishing step of polishing to substantially flatten both the CVD diamond layers on the single crystalline diamond seed substrate and on the second region by mechanically polishing.
摘要翻译：本发明提供了通过适用于半导体光刻处理的方法制造的大规模金刚石基板和基板的制造方法以及大型光学部件，半导体材料，热释放基板，半导体晶片处理和反馈装置，和别的。本发明的金刚石基板的制造方法包括：准备基板的安装步骤，所述基板具有主面，所述主面包括第一区域，所述第一区域是凹形的并且具有围绕所述第一区域的第二区域，并且安装在所述第一区域，具有厚于所述第一区域的凹入深度的板厚度的单晶金刚石种子基板; 使用化学气相沉积从所述单晶金刚石种子基板形成CVD金刚石层并且通过在所述第二区域上同时形成CVD金刚石层来相互连接的连接步骤; 以及抛光步骤，通过机械抛光在单晶金刚石种子基底上和第二区域上基本上平坦化CVD金刚石层。

53. 发明授权

US07026750B2 Electron emission element 失效
标题翻译：电子发射元件
公开(公告)号：US07026750B2
公开(公告)日：2006-04-11
申请号：US10667149
申请日：2003-09-22
申请人： Yoshiki Nishibayashi , Takahiro Imai , Yutaka Ando
发明人： Yoshiki Nishibayashi , Takahiro Imai , Yutaka Ando
IPC分类号： H01J1/14
CPC分类号： H01J1/3044 , H01J2201/30457
摘要： An electron emission element of the present invention comprises a substrate, and a protrusion protruding from the substrate and including boron-doped diamond. The protrusion comprises a columnar body. And a tip portion of the protrusion comprises an acicular body sticking out therefrom. The distance r [cm] between a center axis and a side face in the columnar body and the boron concentration Nb [cm−3] in the diamond satisfy the relationship represented by the following formula (1): r > 10 4 Nb . ( 1 )
摘要翻译：本发明的电子发射元件包括基底和从基底突出并包含掺杂硼的金刚石的突起。突起包括柱状体。并且突起的尖端部分包括从其伸出的针状体。菱形中的中心轴和侧面之间的距离r [cm]和菱形中的硼浓度Nb [cm -3]满足下式（1）所示的关系： $\begin{matrix} r> < / MO>10\sqrt{（1）} \end{matrix}$

54. 发明授权

US07005324B2 Method of fabricating stacked semiconductor chips 失效
标题翻译：叠层半导体芯片的制造方法
公开(公告)号：US07005324B2
公开(公告)日：2006-02-28
申请号：US10661372
申请日：2003-09-12
申请人： Takahiro Imai
发明人： Takahiro Imai
IPC分类号： H01L21/48
CPC分类号： H01L24/73 , H01L21/563 , H01L21/76898 , H01L21/78 , H01L23/3121 , H01L24/24 , H01L24/82 , H01L25/0657 , H01L2224/02371 , H01L2224/04105 , H01L2224/05001 , H01L2224/05022 , H01L2224/05572 , H01L2224/16 , H01L2224/24145 , H01L2224/48225 , H01L2224/48227 , H01L2224/73257 , H01L2224/76155 , H01L2224/92244 , H01L2224/94 , H01L2225/0652 , H01L2225/06524 , H01L2225/06551 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/12042 , H01L2924/14 , H01L2924/19041 , H01L2924/00 , H01L2224/05624 , H01L2924/00014 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/05671 , H01L2224/05684 , H01L2224/05124 , H01L2224/05147 , H01L2224/03
摘要： A groove is formed on a semiconductor substrate having integrated circuits and electrodes from a first surface. An insulating layer is formed on an inner surface of the groove. A conductive layer is formed on the insulating layer above the inner surface of the groove. A second surface of the semiconductor substrate opposite to the first surface is ground until the groove is exposed to divide the semiconductor substrate into a plurality of semiconductor chips in which the conductive layer is exposed on a side surface of each semiconductor chip. The semiconductor chips are then stacked. The conductive layer of one of the semiconductor chips is electrically connected to the conductive layer of another one of the semiconductor chips.
摘要翻译：在具有集成电路和电极的半导体衬底上从第一表面形成沟槽。绝缘层形成在槽的内表面上。导电层形成在沟槽内表面上的绝缘层上。研磨半导体衬底与第一表面相对的第二表面，直到暴露凹槽，以将半导体衬底分成在每个半导体芯片的侧表面上暴露导电层的多个半导体芯片。然后堆叠半导体芯片。半导体芯片之一的导电层电连接到另一个半导体芯片的导电层。

55. 发明授权

US06966934B1 Gas reclaiming equipment 失效
标题翻译：气体回收设备
公开(公告)号：US06966934B1
公开(公告)日：2005-11-22
申请号：US09672775
申请日：2000-09-29
申请人： Toshikazu Sato , Toshiaki Inohara , Hiroshi Murase , Hiromi Naotsuka , Takahiro Imai
发明人： Toshikazu Sato , Toshiaki Inohara , Hiroshi Murase , Hiromi Naotsuka , Takahiro Imai
IPC分类号： H01H33/56 , F25J3/06 , F25J3/08 , B01D39/00 , A62B7/08
CPC分类号： B01D53/002 , B01D53/04 , B01D53/68 , B01D2253/108 , B01D2253/308 , B01D2257/204 , B01D2257/55 , Y02C20/30
摘要： A gas reclaiming equipment capable of separating SF6 gas from a mixed gas efficiently and shortening reclaiming work under reduced pressure. A gas separation equipment is provided between a gas insulated equipment and a gas liquefaction system. The gas separation equipment separates nitrogen gas from the mixed gas, and concentrates SF6 gas. Only SF6 gas is sent into the gas liquefaction system. The gas separation equipment uses pressure swing adsorption using an adsorbent with selective adsorption. Moreover, a buffer tank for storing mixed gas is provided between the gas separation equipment and the gas insulated equipment. The buffer tank and the gas liquefaction system are connected by a reflux-line. The reflux-line refluxes the gas in a gas phase in the gas liquefaction system to the buffer tank. Furthermore, the gas separation equipment is connected to a storage tank. The storage tank accumulates the nitrogen gas separated with the gas separation equipment. The adsorbent to adsorb SF6 gas is enclosed in the storage tank for exhaust gas. To absorb decomposed gas, the filter has an adsorbent of the chemisorption type. The adsorbent has of a metal hydrate.
摘要翻译：能够有效地从混合气体中分离SF 6气体的气体回收设备，并且在减压下缩短回收作业。在气体绝缘设备和气体液化系统之间设置气体分离设备。气体分离设备将氮气与混合气体分离，并浓缩SF6气体。只有SF 6气体被送入气体液化系统。气体分离设备使用具有选择性吸附的吸附剂进行变压吸附。此外，在气体分离设备和气体绝缘设备之间设置有用于存储混合气体的缓冲罐。缓冲罐和气体液化系统通过回流管连接。回流线将气体液化系统中的气相中的气体回流到缓冲罐。此外，气体分离设备连接到储罐。储罐积聚与气体分离设备分离的氮气。用于吸附SF 6气体的吸附剂封闭在用于废气的储罐中。为了吸收分解气体，过滤器具有化学吸附型吸附剂。吸附剂具有金属水合物。

56. 发明申请

US20050211159A1 Diamond single crystal substrate 有权
标题翻译：金刚石单晶基板
公开(公告)号：US20050211159A1
公开(公告)日：2005-09-29
申请号：US11055973
申请日：2005-02-14
申请人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
发明人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
IPC分类号： C30B25/18 , C30B29/04 , C30B7/00 , C30B21/02 , C30B23/00 , C30B25/00 , C30B28/06 , C30B28/12 , C30B28/14
CPC分类号： C30B25/18 , C30B29/04
摘要： A diamond single crystal substrate obtained by a vapor-phase growth method, wherein the diamond intrinsic Raman shift of the diamond single crystal substrate surface measured by microscopic Raman spectroscopy with a focused beam spot diameter of excitation light of 2 μm is deviated by +0.5 cm−1 or more to +3.0 cm−1 or less from the standard Raman shift quantity of strain-free diamond, in a region (region A) which is more than 0% to not more than 25% of the surface, and is deviated by −1.0 cm−1 or more to less than +0.5 cm−1 from the standard Raman shift quantity of strain-free diamond, in a region (region B) of the surface other than the region A. The diamond single crystal substrate can be obtained with a large size and high-quality without cracking and is suitable for semiconductor materials, electronic components, and optical components or the like.
摘要翻译：通过气相生长法获得的菱形单晶基板，其中通过微观拉曼光谱测量的金刚石单晶衬底表面的金刚石固有拉曼位移具有2μm激发光的聚焦光束直径偏离+0.5cm 在不大于0的区域（区域A）中，与无应变金刚石的标准拉曼位移量相比，超过-1.0以上至+ 3.0cm -1以下％至不大于25％的表面，并且与标准拉曼位移量偏离-1.0cm -1以上至小于+0.5cm -1以下的无应变金刚石，在区域A以外的表面的区域（区域B）中。金刚石单晶基板可以以大尺寸，高品质而不破裂地获得，并且适用于半导体材料，电子部件，和光学部件等。

57. 发明授权

US06794683B2 Diamond substrate having piezoelectric thin film, and method for manufacturing it 失效
标题翻译：具有压电薄膜的金刚石基板及其制造方法
公开(公告)号：US06794683B2
公开(公告)日：2004-09-21
申请号：US10362890
申请日：2003-02-23
申请人： Natsuo Tatsumi , Takahiro Imai
发明人： Natsuo Tatsumi , Takahiro Imai
IPC分类号： H01L2904
CPC分类号： C23C14/165 , C23C14/325 , H01L41/081 , H01L41/1873 , H01L41/316 , H03H3/08 , H03H9/02582
摘要： Further improvements in circuit-element performance of surface-acoustic wave devices are anticipated by being able to produce a diamond substrate on which is formed a Li(NbxTa1−x)O3 (wherein 0≦x≦1) thin film whose c-axis orientation is favorable and whose piezoelectric characteristics are satisfactory. A diamond substrate on which a highly c-axis oriented, piezoelectrically satisfactory Li(NbxTa1−x)O3 (wherein 0≦x≦1) thin film is formed can be obtained by using a laser ablation technique to form a Li(NbxTa1−x)O3 (wherein 0≦x≦1) thin film onto a (110)-oriented gas-phase synthesized polycrystalline diamond substrate, that is superficially mirror-surface processed. By utilizing a diamond substrate on which a piezoelectric-substance thin film is formed, surface-acoustic wave devices having high propagation speeds can be offered.
摘要翻译：表面声波器件的电路元件性能的进一步改进可以通过能够制造金刚石基片而形成Li（Nb x Ti a-x）O 3（其中0 <= x <= 1）薄膜，其中c- 轴方向是有利的，其压电特性令人满意。通过使用激光烧蚀技术可以获得其上形成高度c轴取向的，压电令人满意的Li（Nb x Ti a-x）O 3（其中0 <= x <= 1））薄膜的金刚石基底，以形成Li（Nb x Ti a-x） -x）O3（其中0 <= x <= 1）薄膜到（110）取向的气相合成多晶金刚石基底上，其表面经镜面加工。通过利用其上形成有压电物质薄膜的金刚石基板，可以提供具有高传播速度的表面声波装置。

58. 发明授权

US06423982B1 Diamond interconnection substrate and a manufacturing method therefor 有权
公开(公告)号：US06423982B1
公开(公告)日：2002-07-23
申请号：US09765238
申请日：2001-01-16
申请人： Yoshiki Nishibayashi , Takashi Matsuura , Takahiro Imai
发明人： Yoshiki Nishibayashi , Takashi Matsuura , Takahiro Imai
IPC分类号： H01L310312
摘要： An electrical connection board includes a diamond substrate and an implantation metal layer constituted by the presence of metal elements in the diamond substrate. The metal layer has a thickness of at least 10 nm and a concentration of at least 1020 cm−3 in the diamond substrate. The implantation metal layer is formed by ion implanting metal elements with a high energy level of at least 1 MeV and a high dose of at least 1016 cm−2. Thus, a technique is provided by which a multi-layer electrical interconnection is realized in the diamond substrate having the highest thermal conductivity of all known materials.

59. 发明授权

US06197998B1 Process for producing N-glycyltyrosine and its crystal structure 失效
标题翻译：生产N-甘氨酰酪氨酸的方法及其晶体结构
公开(公告)号：US06197998B1
公开(公告)日：2001-03-06
申请号：US09289737
申请日：1999-04-12
申请人： Takashi Mimura , Eiichiro Imai , Takahiro Imai , Takehiro Ogasa , Masaji Kasai
发明人： Takashi Mimura , Eiichiro Imai , Takahiro Imai , Takehiro Ogasa , Masaji Kasai
IPC分类号： C07C22900
CPC分类号： C07K5/06026 , C07C233/47
摘要： Provided is a process for efficiently producing N-glycyltyrosine of high purity represented by the following formula: a salt thereof, or a solvate thereof, which comprises adding dropwise to an aqueous suspension of tyrosine or a salt thereof 2 equivalents or more of a haloacetyl halide and an aqueous solution of an inorganic base simultaneously in the presence or absence of an organic solvent, and subjecting the resulting N-haloacetyltyrosine to a reaction with an ammonium ion. Also provided are N-glycyl-L-tyrosine dehydrate having the crystal structures showing specific diffraction patterns in X-ray powder diffraction and processes for producing the same which are characterized by comprising crystallizing the dihydrate from an ethanol-water mixed solvent or water.
摘要翻译：本发明提供了一种有效生产下式的高效纯化N-甘氨酰酪氨酸的方法：其盐或其溶剂合物，其包括滴加酪氨酸水溶液或其盐2当量或更多的卤代乙酰卤和无机碱的水溶液同时在有机溶剂的存在或不存在下进行，并将所得N-卤代乙酰基酪氨酸与铵离子反应。还提供了具有在X射线粉末衍射中显示特定衍射图案的晶体结构的N-甘氨酰-L-酪氨酸脱水
体及其制备方法，其特征在于包括从乙醇 - 水混合溶剂或水中结晶二水合物。

60. 发明授权

US06184611B2 Electron-emitting element 失效
标题翻译：电子发射元件
公开(公告)号：US06184611B2
公开(公告)日：2001-02-06
申请号：US09037514
申请日：1998-03-10
申请人： Hirohisa Saito , Takashi Tsuno , Hiromu Shiomi , Yoshiaki Kumazawa , Takahiro Imai
发明人： Hirohisa Saito , Takashi Tsuno , Hiromu Shiomi , Yoshiaki Kumazawa , Takahiro Imai
IPC分类号： H01J102
CPC分类号： H01J1/3042 , H01J2201/30457
摘要： An electron-emitting element comprises a diamond substrate, and a diamond protrusion grown on a surface of the diamond substrate so as to have a pointed portion in a form capable of emitting an electron. Since the diamond protrusion formed by growth has a sharply pointed tip portion, it can fully emit electrons. Preferably, the surface of the diamond substrate is a {100} face, and the diamond protrusion is surrounded by {111} faces.
摘要翻译：电子发射元件包括金刚石衬底和在金刚石衬底的表面上生长的金刚石突起，以便具有能够发射电子的形式的尖端部分。由于通过生长形成的金刚石突起具有尖锐的尖端部分，所以它可以完全发射电子。优选地，金刚石基底的表面是{100}面，并且金刚石突起被{111}面包围。

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