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    • 52. 发明授权
    • Method of generating a source program from inputted schematic information
    • 从输入的原理图信息生成源程序的方法
    • US4831525A
    • 1989-05-16
    • US145410
    • 1988-01-19
    • Kazumasa SaitoHiroyuki MaezawaMasakazu KobayashiYoshihiko Futamura
    • Kazumasa SaitoHiroyuki MaezawaMasakazu KobayashiYoshihiko Futamura
    • G06F9/06G06F9/44
    • B82Y15/00G06F8/30Y10S715/967
    • According to the present invention, using a display terminal for conversation, a module structure diagram (schemata expressive of the connectional relations among respective program modules) is created, and a processing flow diagram (a kind of processing flow chart), an internal data definition diagram (schemata for specifying the formats etc. of data for use in processes) and an interface data definition diagram (schemata for specifying the formats etc. of arguments, common data between the modules, etc.) are created for each module, the created contents being stored in a memory. Further, the schematic information items of the module structure diagram, processing flow diagram, internal data definition diagram and interface data definition diagram are read out from the memory for each module and have stereotyped sentences and symbols added thereto, to generate the individual sentences of a source program. These sentences are edited according to the rules of a language, to complete the source program. If necessary, the various diagrams are printed out and utilized as program specifications.
    • 根据本发明,使用显示终端进行会话,形成模块结构图(表示各程序模块之间的连接关系的模式),处理流程图(处理流程图的种类),内部数据定义 为每个模块创建图表(用于指定用于进程的数据的格式等)和接口数据定义图(用于指定参数的格式等的模式,模块之间的公共数据等),创建 内容被存储在存储器中。 此外,模块结构图,处理流程图,内部数据定义图和接口数据定义图的原理图信息项目从每个模块的存储器中读出,并添加了刻板的句子和符号,以生成单个句子 源程序。 这些句子根据语言的规则进行编辑,以完成源程序。 如果需要,各种图表被打印出来并用作程序规格。
    • 57. 发明授权
    • Computer system and storage control method
    • 计算机系统和存储控制方法
    • US09176881B2
    • 2015-11-03
    • US13577165
    • 2012-01-26
    • Masakazu KobayashiHiroshi NojimaTakuya Okamoto
    • Masakazu KobayashiHiroshi NojimaTakuya Okamoto
    • G06F12/08
    • G06F12/0866G06F2212/314
    • The entirety or a part of free space of a second storage device included in a host computer is used as a cache memory region (external cache) outside of a storage apparatus. If Input/Output (I/O) in the host computer is Write, a Write request is transmitted from the host computer to a storage apparatus, the storage apparatus writes data associated with the Write request into a main cache that is a cache memory region included in this storage apparatus, and the storage apparatus writes the data in the main cache into a first storage device included in the storage apparatus. The storage apparatus writes the data in the main cache into an external cache included in the host computer. If the I/O in the host computer is Read, the host computer determines whether or not Read data as target data of the Read exists in the external cache. If a result of the determination is positive, the host computer reads the Read data from the external cache.
    • 包含在主计算机中的第二存储装置的可用空间的整体或一部分被用作在存储装置之外的高速缓冲存储器区域(外部高速缓存)。 如果主计算机中的输入/输出(I / O)为写入,则从主计算机向存储装置发送写请求,存储装置将与写请求相关联的数据写入作为高速缓冲存储器区域的主缓存 包括在该存储装置中,并且存储装置将数据存储在主高速缓存中,以包含在存储装置中的第一存储装置中。 存储装置将主缓存中的数据写入包含在主计算机中的外部高速缓存。 如果主计算机中的I / O为读取,则主机确定读取数据作为Read的目标数据是否存在于外部缓存中。 如果确定结果为肯定,则主机从外部缓存读取读取数据。
    • 60. 发明申请
    • POWER SEMICONDUCTOR DEVICE
    • 功率半导体器件
    • US20120241814A1
    • 2012-09-27
    • US13425250
    • 2012-03-20
    • Shuji KAMATAMasakazu Kobayashi
    • Shuji KAMATAMasakazu Kobayashi
    • H01L29/739
    • H01L29/7397H01L29/0834H01L29/51
    • A power semiconductor device includes a p-type collector layer, an n-type base layer, a p-type base layer, an n-type source layer, and a gate electrode. The gate electrode is formed in a trench running from a surface of the n-type source layer through the n-type source layer and the p-type base layer to an interior of the n-type base layer via a gate insulating film. The gate electrode includes a first portion and a second portion. The first portion is opposed to a bottom end portion of the p-type base layer. The second portion is opposed to an upper end portion of the p-type base layer. The gate electrode is formed such that a threshold at the bottom end portion of the p-type base layer is not less than a threshold at the upper end portion of the p-type base layer.
    • 功率半导体器件包括p型集电极层,n型基极层,p型基极层,n型源极层和栅电极。 栅电极形成在从n型源极的表面通过n型源极层和p型基极层经由栅极绝缘膜向n型基极层的内部延伸的沟槽中。 栅电极包括第一部分和第二部分。 第一部分与p型基底层的底端部分相对。 第二部分与p型基底层的上端部相对。 栅电极形成为使p型基极层的底端部的阈值为p型基底层的上端部的阈值以上。