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51. 发明授权

US06879870B2 Method and apparatus for routing harmonics in a plasma to ground within a plasma enhanced semiconductor wafer processing chamber 失效
标题翻译：用于在等离子体增强半导体晶片处理室内等离子体对地布置谐波的方法和装置
公开(公告)号：US06879870B2
公开(公告)日：2005-04-12
申请号：US10124191
申请日：2002-04-16
申请人： Steven C. Shannon , Daniel J. Hoffman , Michael Barnes , Lee LaBlanc
发明人： Steven C. Shannon , Daniel J. Hoffman , Michael Barnes , Lee LaBlanc
IPC分类号： H01J37/32 , G01F19/00
CPC分类号： H01J37/32174 , H01J37/32082
摘要： A method and apparatus for routing harmonic energy within a plasma to ground in a plasma enhanced semiconductor wafer processing reactor. A model of the chamber is used to determine the pathway for RF power and the harmonic energy of that RF power through the chamber. From this model, the placement and design of a harmonic routing circuit is determined to shunt the harmonic energy to ground.
摘要翻译：一种用于在等离子体增强的半导体晶片处理反应器中将等离子体内的谐波能量路由到地的方法和装置。该室的模型用于确定RF功率的路径和通过室的RF功率的谐波能量。从该模型中，确定谐波路由电路的布置和设计，以将谐波能量分流到地。

52. 发明授权

US07812278B2 Method for testing plasma reactor multi-frequency impedance match networks 有权
标题翻译：等离子体反应堆多频阻抗匹配网络的测试方法
公开(公告)号：US07812278B2
公开(公告)日：2010-10-12
申请号：US11778055
申请日：2007-07-15
申请人： Steven C. Shannon
发明人： Steven C. Shannon
IPC分类号： B23K10/00
CPC分类号： H01P5/08
摘要： In one implementation, a method is provided for testing a plasma reactor multi-frequency matching network comprised of multiple matching networks, each of the multiple matching networks having an associated RF power source and being tunable within a tunespace. The method includes providing a multi-frequency dynamic dummy load having a frequency response within the tunespace of each of the multiple matching networks at an operating frequency of its associated RF power source. The method further includes characterizing a performance of the multi-frequency matching network based on a response of the multi-frequency matching network while simultaneously operating at multiple frequencies.
摘要翻译：在一个实现中，提供了一种用于测试由多个匹配网络组成的等离子体反应器多频匹配网络的方法，所述多个匹配网络中的每一个具有相关联的RF功率源并且可在调谐空间内调节。该方法包括在其相关RF功率源的工作频率下提供在多个匹配网络中的每一个的调谐空间内具有频率响应的多频动态虚拟负载。该方法还包括基于多频匹配网络的响应来表征多频匹配网络的性能，同时在多个频率下操作。

53. 发明申请

US20090097185A1 Time-based wafer de-chucking from an electrostatic chuck having separate RF bias and DC chucking electrodes 有权
标题翻译：从具有分离的RF偏压和DC夹持电极的静电卡盘的基于时间的晶片去卡夹
公开(公告)号：US20090097185A1
公开(公告)日：2009-04-16
申请号：US11974502
申请日：2007-10-11
申请人： Steven C. Shannon , Michael G. Chafin , Dennis S. Grimard
发明人： Steven C. Shannon , Michael G. Chafin , Dennis S. Grimard
IPC分类号： H02N13/00
CPC分类号： H02N13/00 , H01J37/32091 , H01J37/32174 , H01L21/6833 , H01L21/68742
摘要： An electrostatic chuck in a reactor chamber has a cathode electrode insulated from ground, a chucking electrode insulated from the cathode electrode and a dielectric layer overlying the chucking electrode that provides a workpiece support surface. A D.C. chucking voltage supply is coupled to the chucking electrode. An RF power generator is coupled to the cathode electrode. A voltage sensing apparatus is coupled to the chucking electrode and to the cathode electrode to monitor the voltage difference between them during discharge after removal of RF and DC power at the conclusion of processing. The reactor includes a controller programmed to raise the lift pins during electrode discharge as soon as the voltage sensing apparatus detects equal voltages simultaneously on the chucking and cathode electrodes.
摘要翻译：反应器室中的静电卡盘具有与地绝缘的阴极电极，与阴极绝缘的夹持电极和覆盖夹持电极的提供工件支撑表面的电介质层。夹紧电压供应装置连接到夹持电极。 RF发生器耦合到阴极电极。电压感测装置耦合到夹持电极和阴极电极，以在处理结束时去除RF和DC电力之后，在放电期间监测它们之间的电压差。电抗器包括一个控制器，其被编程为一旦电压感测装置同时在夹紧和阴极电极上检测相同的电压，就可以在电极放电期间升高升降管脚。

54. 发明申请

US20080276958A1 SUBSTRATE CLEANING CHAMBER AND CLEANING AND CONDITIONING METHODS 有权
标题翻译：基板清洗室和清洁和调节方法
公开(公告)号：US20080276958A1
公开(公告)日：2008-11-13
申请号：US11745451
申请日：2007-05-08
申请人： Vineet Mehta , Karl Brown , John A. Pipitone , Daniel J. Hoffman , Steven C. Shannon , Keith A. Miller , Vijay D. Parkhe
发明人： Vineet Mehta , Karl Brown , John A. Pipitone , Daniel J. Hoffman , Steven C. Shannon , Keith A. Miller , Vijay D. Parkhe
IPC分类号： C25F3/12 , C25F7/00
CPC分类号： B08B7/0035 , C25F7/00 , H01J37/32009 , H01J37/32541 , H01L21/02046 , H01L21/0206
摘要： A substrate cleaning chamber includes a contoured ceiling electrode having an arcuate surface that faces a substrate support and has a variable cross-sectional thickness to vary the gap size between the arcuate surface and the substrate support to provide a varying plasma density across the substrate support. A dielectric ring for the cleaning chamber comprises a base, a ridge, and a radially inward ledge that covers the peripheral lip of the substrate support. A base shield comprises a circular disc having at least one perimeter wall. Cleaning and conditioning processes for the cleaning chamber are also described.
摘要翻译：衬底清洁室包括具有面向衬底支撑件的弓形表面的轮廓天花板电极，并且具有可变的横截面厚度以改变弧形表面和衬底支撑件之间的间隙尺寸，以在衬底支撑件上提供变化的等离子体密度。用于清洁室的介电环包括覆盖基板支撑件的周缘的基部，脊和径向向内的凸缘。底座包括具有至少一个周边壁的圆盘。还描述了清洁室的清洁和调节过程。

55. 发明授权

US07440859B2 Method for determining plasma characteristics 失效
标题翻译：确定等离子体特性的方法
公开(公告)号：US07440859B2
公开(公告)日：2008-10-21
申请号：US11617802
申请日：2006-12-29
申请人： Steven C. Shannon , Daniel J. Hoffman , Jeremiah T. P. Pender , Tarreg Mawari
发明人： Steven C. Shannon , Daniel J. Hoffman , Jeremiah T. P. Pender , Tarreg Mawari
IPC分类号： G01R23/16
CPC分类号： H05H1/0081 , H01J37/32174 , H01J37/32935 , H01L21/67005
摘要： Methods for determining characteristics of a plasma are provided. In one embodiment, a method for determining characteristics of a plasma includes obtaining metrics of a plasma at two different frequencies, and determining at least one characteristic of the plasma utilizing the metrics. In another embodiment, a method for determining characteristics of a plasma includes obtaining metrics of current and voltage information for first and second waveforms coupled to a plasma at different frequencies, determining at least one characteristic of the plasma using the metrics obtained from each different frequency waveform. In another embodiment, the method includes providing a plasma impedance model of a plasma as a function of frequency, and determining at least one characteristic of a plasma using model.
摘要翻译：提供了确定等离子体特性的方法。在一个实施例中，用于确定等离子体特性的方法包括以两个不同的频率获得等离子体的度量，以及使用该度量来确定等离子体的至少一个特性。在另一个实施例中，一种用于确定等离子体特性的方法包括获得与不同频率耦合到等离子体的第一波形和第二波形的电流和电压信息的度量，使用从每个不同频率波形获得的度量来确定等离子体的至少一个特性。在另一个实施例中，该方法包括提供作为频率的函数的等离子体的等离子体阻抗模型，以及使用模型确定等离子体的至少一个特性。

56. 发明授权

US07431857B2 Plasma generation and control using a dual frequency RF source 有权
标题翻译：使用双频RF源的等离子体发生和控制
公开(公告)号：US07431857B2
公开(公告)日：2008-10-07
申请号：US10843914
申请日：2004-05-12
申请人： Steven C. Shannon , Alex Paterson , Theodoros Panagopoulos , John P. Holland , Dennis Grimard , Yashushi Takakura
发明人： Steven C. Shannon , Alex Paterson , Theodoros Panagopoulos , John P. Holland , Dennis Grimard , Yashushi Takakura
IPC分类号： G01R31/00
CPC分类号： H01J37/32082 , H01J37/32165 , H01J37/32706
摘要： A method and apparatus for generating and controlling a plasma in a semiconductor substrate processing chamber using a dual frequency RF source is provided. The method includes the steps of supplying a first RF signal from the source to an electrode within the processing chamber at a first frequency and supplying a second RF signal from the source to the electrode within the processing chamber at a second frequency. The second frequency is different from the first frequency by an amount equal to a desired frequency. Characteristics of a plasma formed in the chamber establish a sheath modulation at the desired frequency.
摘要翻译：提供了一种使用双频RF源在半导体衬底处理室中产生和控制等离子体的方法和装置。该方法包括以第一频率将来自源的第一RF信号提供给处理室内的电极的步骤，并以第二频率将来自源的第二RF信号提供给处理室内的电极。第二频率与第一频率不等于期望频率的量。在腔室中形成的等离子体的特性以期望的频率建立护套调制。

57. 发明申请

US20080121345A1 MAGNETIC CONFINEMENT OF A PLASMA 失效
标题翻译：等离子体的磁性限制
公开(公告)号：US20080121345A1
公开(公告)日：2008-05-29
申请号：US11564206
申请日：2006-11-28
申请人： Steven C. Shannon , Masao Drexel , James A. Stinnett , Ying Rui , Ying Xiao , Roger A. Lindley , Imad Yousif
发明人： Steven C. Shannon , Masao Drexel , James A. Stinnett , Ying Rui , Ying Xiao , Roger A. Lindley , Imad Yousif
IPC分类号： H01L21/306
CPC分类号： H01J37/3266 , H01J37/32082 , H01J37/32623
摘要： A method and apparatus for confining a plasma are provided herein. In one embodiment, an apparatus for confining a plasma includes a substrate support and a magnetic field forming device for forming a magnetic field proximate a boundary between a first region disposed at least above the substrate support, where a plasma is to be formed, and a second region, where the plasma is to be selectively restricted. The magnetic field has b-field components perpendicular to a direction of desired plasma confinement that selectively restrict movement of charged species of the plasma from the first region to the second region dependent upon the process conditions used to form the plasma.
摘要翻译：本文提供了一种限制等离子体的方法和装置。在一个实施例中，用于限制等离子体的装置包括基板支撑件和磁场形成装置，用于在至少设置在衬底支架上的第一区域之间形成靠近边界的磁场，其中将形成等离子体，以及第二区域，其中等离子体将被选择性地限制。磁场具有垂直于期望等离子体限制的方向的b场分量，其根据用于形成等离子体的工艺条件，选择性地限制等离子体的带电物质从第一区域到第二区域的移动。

58. 发明授权

US07375947B2 Method of feedback control of ESC voltage using wafer voltage measurement at the bias supply output 有权
标题翻译：使用偏置电源输出的晶圆电压测量对ESC电压进行反馈控制的方法
公开(公告)号：US07375947B2
公开(公告)日：2008-05-20
申请号：US11672362
申请日：2007-02-07
申请人： Jang Gyoo Yang , Daniel J. Hoffman , Steven C. Shannon , Douglas H. Burns , Wonseok Lee , Kwang-Soo Kim
发明人： Jang Gyoo Yang , Daniel J. Hoffman , Steven C. Shannon , Douglas H. Burns , Wonseok Lee , Kwang-Soo Kim
IPC分类号： H01L21/283 , B23B31/28
CPC分类号： H01J37/32706 , H01J37/32935 , H01L21/6833 , Y10T279/23
摘要： In a plasma reactor having an electrostatic chuck, wafer voltage is determined from RF measurements at the bias input using previously determined constants based upon transmission line properties of the bias input, and this wafer voltage is used to accurately control the DC wafer clamping voltage.
摘要翻译：在具有静电卡盘的等离子体反应器中，使用基于偏置输入的传输线特性的先前确定的常数，在偏置输入处的RF测量确定晶片电压，并且该晶片电压用于精确地控制DC晶片钳位电压。

59. 发明授权

US07359177B2 Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply output 有权
标题翻译：具有E.S.C.反馈控制的双偏压等离子体反应器电压使用晶圆电压测量在偏置电源输出
公开(公告)号：US07359177B2
公开(公告)日：2008-04-15
申请号：US11127036
申请日：2005-05-10
申请人： Jang Gyoo Yang , Daniel J. Hoffman , Steven C. Shannon , Douglas H. Burns , Wonseok Lee , Kwang-Soo Kim
发明人： Jang Gyoo Yang , Daniel J. Hoffman , Steven C. Shannon , Douglas H. Burns , Wonseok Lee , Kwang-Soo Kim
IPC分类号： H01L21/683 , H01T23/00 , G01L21/30 , G01R31/00 , H01J7/24 , H05B31/26 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32706 , H01J37/32935 , H01L21/6833 , Y10T279/23
摘要： A plasma reactor has a dual frequency plasma RF bias power supply furnishing RF bias power comprising first and second frequency components, f(1), f(2), respectively, and an RF power path having an input end coupled to the plasma RF bias power supply and an output end coupled to the wafer support pedestal, and sensor circuits providing measurement signals representing first and second frequency components of a measured voltage and first and second frequency components of a measured current near the input end of the RF power path. The reactor further includes a processor for providing first and second frequency components of a wafer voltage signal as, respectively, a first sum of the first frequency components of the measured voltage and measured current multiplied by first and second coefficients respectively, and a second sum of the second frequency components of the measured voltage and measured current multiplied by third and fourth coefficients, respectively. A processor produces a D.C. wafer voltage by combining D.C. components of the first and second frequency components of the wafer voltage with an intermodulation correction factor that is the product of the D.C. components of the first and second components of the wafer voltage raised to a selected power and multiplied by a selected coefficient.
摘要翻译：等离子体反应器具有双频等离子体RF偏压电源，其分别提供包括第一和第二频率分量f（1），f（2）的RF偏置功率，以及具有耦合到等离子体RF偏置的输入端的RF功率路径电源和耦合到晶片支撑基座的输出端，以及传感器电路，其提供表示测量电压的第一和第二频率分量以及在RF功率路径的输入端附近的测量电流的第一和第二频率分量的测量信号。反应器还包括处理器，用于分别提供晶片电压信号的第一和第二频率分量，分别为测量电压的第一频率分量和测量电流乘以第一和第二系数的第一和，以及第二和测量电压和测量电流的第二频率分量分别乘以第三和第四系数。处理器通过将晶片电压的第一和第二频率分量的DC分量与作为晶片电压的第一和第二分量的DC分量升高到所选功率的互调校正因子相结合来产生DC晶片电压并乘以所选系数。

60. 发明授权

US07286948B1 Method for determining plasma characteristics 失效
标题翻译：确定等离子体特性的方法
公开(公告)号：US07286948B1
公开(公告)日：2007-10-23
申请号：US11424705
申请日：2006-06-16
申请人： Steven C. Shannon , Daniel J. Hoffman , Jeremiah T. P. Pender , Tarreg Mawari
发明人： Steven C. Shannon , Daniel J. Hoffman , Jeremiah T. P. Pender , Tarreg Mawari
IPC分类号： G01R23/16
CPC分类号： H05H1/0081 , H01J37/32174 , H01J37/32935 , H01L21/67005
摘要： Methods for determining characteristics of a plasma are provided. In one embodiment, a method for determining characteristics of a plasma includes obtaining metrics of current and voltage information for first and second waveforms coupled to a plasma at different frequencies, determining at least one characteristic of the plasma using the metrics obtained from each different frequency waveform. In another embodiment, the method includes providing a plasma impedance model of a plasma as a function of frequency, and determining at least one characteristic of a plasma using model. In yet another embodiment, the method includes providing a plasma impedance model of a plasma as a function of frequency, measuring current and voltage for waveforms coupled to the plasma and having at least two different frequencies, and determining ion mass of a plasma from model and the measured current and voltage of the waveforms.
摘要翻译：提供了确定等离子体特性的方法。在一个实施例中，用于确定等离子体特性的方法包括获得与不同频率耦合到等离子体的第一和第二波形的电流和电压信息的度量，使用从每个不同频率波形获得的度量来确定等离子体的至少一个特性。在另一个实施例中，该方法包括提供作为频率的函数的等离子体的等离子体阻抗模型，以及使用模型确定等离子体的至少一个特性。在另一个实施例中，该方法包括提供作为频率的函数的等离子体的等离子体阻抗模型，测量耦合到等离子体并具有至少两个不同频率的波形的电流和电压，以及从模型确定等离子体的离子质量，测量的电流和电压的波形。

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