专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08314033B2 Method of patterning a low-k dielectric film 有权
标题翻译：图案化低k电介质膜的方法
公开(公告)号：US08314033B2
公开(公告)日：2012-11-20
申请号：US13070913
申请日：2011-03-24
申请人： Yifeng Zhou , Srinivas D. Nemani , Khoi Doan , Jeremiah T. P. Pender
发明人： Yifeng Zhou , Srinivas D. Nemani , Khoi Doan , Jeremiah T. P. Pender
IPC分类号： H01L21/302
CPC分类号： H01L21/31138 , H01L21/3105 , H01L21/76814 , H01L2221/1063
摘要： A significantly improved low-k dielectric patterning method is described herein using plasma comprising an oxygen radical source and a silicon source to remove the photo-resist layer.
摘要翻译：本文描述了使用包含氧自由基源和硅源的等离子体去除光致抗蚀剂层的显着改进的低k电介质图案化方法。

2. 发明授权

US07848898B2 Method for monitoring process drift using plasma characteristics 失效
标题翻译：使用等离子体特性监测过程漂移的方法
公开(公告)号：US07848898B2
公开(公告)日：2010-12-07
申请号：US12355130
申请日：2009-01-16
申请人： Steven C. Shannon , Daniel J. Hoffman , Jeremiah T. P. Pender , Tarreg Mawari
发明人： Steven C. Shannon , Daniel J. Hoffman , Jeremiah T. P. Pender , Tarreg Mawari
IPC分类号： G01R23/16
CPC分类号： H05H1/0081 , H01J37/32174 , H01J37/32935 , H01L21/67005
摘要： Methods for monitoring process drift using plasma characteristics are provided. In one embodiment, a method for monitoring process drift using plasma characteristics includes obtaining metrics of current and voltage information of a first waveform coupled to a plasma during a plasma process formed on a substrate, obtaining metrics of current and voltage information of a second waveform coupled to the plasma during the plasma process formed on the substrate, the first and second waveforms having different frequencies, determining at least one characteristic of the plasma using the metrics obtained from each different frequency waveform, and adjusting the plasma process in response to the determined at least one characteristic of the plasma.
摘要翻译：提供了使用等离子体特性监测过程漂移的方法。在一个实施例中，使用等离子体特性来监测过程漂移的方法包括获得在形成在衬底上的等离子体工艺期间耦合到等离子体的第一波形的电流和电压信息的度量，获得耦合的第二波形的电流和电压信息的度量在形成在衬底上的等离子体工艺期间等离子体，第一和第二波形具有不同的频率，使用从每个不同频率波形获得的度量确定等离子体的至少一个特性，以及响应于所确定的等离子体处理等离子体的至少一个特征。

3. 发明授权

US07620511B2 Method for determining plasma characteristics 失效
标题翻译：确定等离子体特性的方法
公开(公告)号：US07620511B2
公开(公告)日：2009-11-17
申请号：US11758299
申请日：2007-06-05
申请人： Steven C. Shannon , Daniel J. Hoffman , Jeremiah T. P. Pender , Tarreg Mawari
发明人： Steven C. Shannon , Daniel J. Hoffman , Jeremiah T. P. Pender , Tarreg Mawari
IPC分类号： G01R23/16
CPC分类号： H05H1/0081 , H01J37/32174 , H01J37/32935 , H01L21/67005
摘要： Methods for determining characteristics of a plasma are provided. In one embodiment, a method for determining characteristics of a plasma includes obtaining metrics of current and voltage information for first and second waveforms coupled to a plasma at different frequencies, determining at least one characteristic of the plasma using the metrics obtained from each different frequency waveform. In another embodiment, the method includes providing a plasma impedance model of a plasma as a function of frequency, and determining at least one characteristic of a plasma using model. In yet another embodiment, the method includes providing a plasma impedance model of a plasma as a function of frequency, measuring current and voltage for waveforms coupled to the plasma and having at least two different frequencies, and determining ion mass of a plasma from model and the measured current and voltage of the waveforms.
摘要翻译：提供了确定等离子体特性的方法。在一个实施例中，用于确定等离子体特性的方法包括获得与不同频率耦合到等离子体的第一和第二波形的电流和电压信息的度量，使用从每个不同频率波形获得的度量来确定等离子体的至少一个特性。在另一个实施例中，该方法包括提供作为频率的函数的等离子体的等离子体阻抗模型，以及使用模型确定等离子体的至少一个特性。在另一个实施例中，该方法包括提供作为频率的函数的等离子体的等离子体阻抗模型，测量耦合到等离子体并具有至少两个不同频率的波形的电流和电压，以及从模型确定等离子体的离子质量，测量的电流和电压的波形。

4. 发明申请

US20080050922A1 Chamber recovery after opening barrier over copper 失效
标题翻译：铜开启屏障后室恢复
公开(公告)号：US20080050922A1
公开(公告)日：2008-02-28
申请号：US11508345
申请日：2006-08-23
申请人： Hairong Tang , Xiaoye Zhao , Keiji Horioka , Jeremiah T. P. Pender
发明人： Hairong Tang , Xiaoye Zhao , Keiji Horioka , Jeremiah T. P. Pender
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/31116 , H01J37/32862
摘要： A chamber dry cleaning process particularly useful after a dielectric plasma etch process which exposes an underlying copper metallization. After the dielectric etch process, the production wafer is removed from the chamber and a cleaning gas is excited into a plasma to clean the chamber walls and recover the dielectric etching characteristic of the chamber. Preferably, the cleaning gas is reducing such as hydrogen gas with the addition of nitrogen gas. Alternatively, the cleaning gas may an oxidizing gas. If the wafer pedestal is vacant during the cleaning, it is not electrically biased. If a dummy wafer is placed on the pedestal during cleaning, the pedestal is biased. The cleaning process is advantageously performed every wafer cycle.
摘要翻译：在暴露下面的铜金属化的电介质等离子体蚀刻工艺之后，室干燥方法特别有用。在电介质蚀刻工艺之后，将生产晶片从腔室中取出，将清洁气体激发到等离子体中以清洁腔室壁并恢复腔室的介电蚀刻特性。优选地，通过添加氮气，清洁气体如氢气还原。或者，清洁气体可以是氧化气体。如果晶片基座在清洁过程中空出，则不会电气偏置。如果在清洁时将底座放置在基座上，则基座偏置。有利地，每个晶片周期执行清洁处理。

5. 发明授权

US07309448B2 Selective etch process of a sacrificial light absorbing material (SLAM) over a dielectric material 失效
标题翻译：在介电材料上的牺牲光吸收材料（SLAM）的选择性蚀刻工艺
公开(公告)号：US07309448B2
公开(公告)日：2007-12-18
申请号：US10706902
申请日：2003-11-12
申请人： Hee Yeop Chae , Jeremiah T. P. Pender , Gerardo A. Delgadino , Xiaoye Zhao , Yan Ye
发明人： Hee Yeop Chae , Jeremiah T. P. Pender , Gerardo A. Delgadino , Xiaoye Zhao , Yan Ye
IPC分类号： B44C1/22 , H01L21/302
CPC分类号： H01L21/76808 , H01L21/31116
摘要： A process of selectively etching a sacrificial light absorbing material (SLAM) over a dielectric material, such as carbon doped oxide, on a substrate using a plasma of a gas mixture in a plasma etch chamber. The gas mixture comprises a hydrofluorocarbon gas, an optional hydrogen-containing gas, an optional fluorine-rich fluorocarbon gas, a nitrogen gas, an oxygen gas, and an inert gas. The process could provide a SLAM to a dielectric material etching selectivity ratio greater than 10:1.
摘要翻译：使用等离子体蚀刻室中的气体混合物的等离子体在衬底上在介电材料（例如碳掺杂氧化物）上选择性地蚀刻牺牲光吸收材料（SLAM）的工艺。气体混合物包括氢氟烃气体，任选的含氢气体，任选的富氟碳氟化合物气体，氮气，氧气和惰性气体。该方法可以提供大于10:1的介电材料蚀刻选择比的SLAM。

6. 发明授权

US08980754B2 Method of removing a photoresist from a low-k dielectric film 有权
标题翻译：从低k电介质膜去除光致抗蚀剂的方法
公开(公告)号：US08980754B2
公开(公告)日：2015-03-17
申请号：US13187357
申请日：2011-07-20
申请人： Yifeng Zhou , Srinivas D. Nemani , Khoi Doan , Jeremiah T. P. Pender
发明人： Yifeng Zhou , Srinivas D. Nemani , Khoi Doan , Jeremiah T. P. Pender
IPC分类号： H01L21/302 , H01L21/311 , H01L21/3105 , H01L21/768 , H01L21/02
CPC分类号： H01L21/31138 , H01L21/02126 , H01L21/02203 , H01L21/3105 , H01L21/76814 , H01L21/76826 , H01L2221/1063
摘要： Methods of removing photoresists from low-k dielectric films are described. For example, a method includes forming and patterning a photoresist layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. Trenches are formed in the exposed portions of the low-k dielectric layer. A plurality of process cycles is performed to remove the photoresist layer. Each process cycle includes forming a silicon source layer on surfaces of the trenches of the low-k dielectric layer, and exposing the photoresist layer to an oxygen source to form an Si—O-containing layer on the surfaces of the trenches of the low-k dielectric layer and to remove at least a portion of the photoresist layer.
摘要翻译：描述了从低k电介质膜去除光致抗蚀剂的方法。例如，一种方法包括在低k电介质层之上形成和图案化光致抗蚀剂层，低k电介质层设置在衬底之上。沟槽形成在低k电介质层的露出部分。执行多个处理循环以去除光致抗蚀剂层。每个处理循环包括在低k电介质层的沟槽的表面上形成硅源层，并且将光致抗蚀剂层暴露于氧源以在低介电层的沟槽的表面上形成含Si-O的层， k电介质层并去除光致抗蚀剂层的至少一部分。

7. 发明授权

US07300597B2 Selective etch process of a sacrificial light absorbing material (SLAM) over a dielectric material 失效
公开(公告)号：US07300597B2
公开(公告)日：2007-11-27
申请号：US11535551
申请日：2006-09-27
申请人： Hee Yeop Chae , Jeremiah T. P. Pender , Gerardo A. Delgadino , Xiaoye Zhao , Yan Ye
发明人： Hee Yeop Chae , Jeremiah T. P. Pender , Gerardo A. Delgadino , Xiaoye Zhao , Yan Ye
IPC分类号： B44C1/22
CPC分类号： H01L21/76808 , H01L21/31116
摘要： A process of selectively etching a sacrificial light absorbing material (SLAM) over a dielectric material, such as carbon doped oxide, on a substrate using a plasma of a gas mixture in a plasma etch chamber. The gas mixture comprises a hydrofluorocarbon gas, an optional hydrogen-containing gas, an optional fluorine-rich fluorocarbon gas, a nitrogen gas, an oxygen gas, and an inert gas. The process could provide a SLAM to a dielectric material etching selectivity ratio greater than 10:1.

8. 发明授权

US07575007B2 Chamber recovery after opening barrier over copper 失效
标题翻译：铜开启屏障后室恢复
公开(公告)号：US07575007B2
公开(公告)日：2009-08-18
申请号：US11508345
申请日：2006-08-23
申请人： Hairong Tang , Xiaoye Zhao , Keiji Horioka , Jeremiah T. P. Pender
发明人： Hairong Tang , Xiaoye Zhao , Keiji Horioka , Jeremiah T. P. Pender
IPC分类号： C25F1/00 , C25F3/30 , C25F5/00
CPC分类号： H01L21/31116 , H01J37/32862
摘要： A chamber dry cleaning process particularly useful after a dielectric plasma etch process which exposes an underlying copper metallization. After the dielectric etch process, the production wafer is removed from the chamber and a cleaning gas is excited into a plasma to clean the chamber walls and recover the dielectric etching characteristic of the chamber. Preferably, the cleaning gas is reducing such as hydrogen gas with the addition of nitrogen gas. Alternatively, the cleaning gas may an oxidizing gas. If the wafer pedestal is vacant during the cleaning, it is not electrically biased. If a dummy wafer is placed on the pedestal during cleaning, the pedestal is biased. The cleaning process is advantageously performed every wafer cycle.
摘要翻译：在暴露下面的铜金属化的电介质等离子体蚀刻工艺之后，室干燥方法特别有用。在电介质蚀刻工艺之后，将生产晶片从腔室中取出，将清洁气体激发到等离子体中以清洁腔室壁并恢复腔室的介电蚀刻特性。优选地，通过添加氮气，清洁气体如氢气还原。或者，清洁气体可以是氧化气体。如果晶片基座在清洁过程中空出，则不会电气偏置。如果在清洁时将底座放置在基座上，则基座偏置。有利地，每个晶片周期执行清洁处理。

9. 发明授权

US07440859B2 Method for determining plasma characteristics 失效
标题翻译：确定等离子体特性的方法
公开(公告)号：US07440859B2
公开(公告)日：2008-10-21
申请号：US11617802
申请日：2006-12-29
申请人： Steven C. Shannon , Daniel J. Hoffman , Jeremiah T. P. Pender , Tarreg Mawari
发明人： Steven C. Shannon , Daniel J. Hoffman , Jeremiah T. P. Pender , Tarreg Mawari
IPC分类号： G01R23/16
CPC分类号： H05H1/0081 , H01J37/32174 , H01J37/32935 , H01L21/67005
摘要： Methods for determining characteristics of a plasma are provided. In one embodiment, a method for determining characteristics of a plasma includes obtaining metrics of a plasma at two different frequencies, and determining at least one characteristic of the plasma utilizing the metrics. In another embodiment, a method for determining characteristics of a plasma includes obtaining metrics of current and voltage information for first and second waveforms coupled to a plasma at different frequencies, determining at least one characteristic of the plasma using the metrics obtained from each different frequency waveform. In another embodiment, the method includes providing a plasma impedance model of a plasma as a function of frequency, and determining at least one characteristic of a plasma using model.
摘要翻译：提供了确定等离子体特性的方法。在一个实施例中，用于确定等离子体特性的方法包括以两个不同的频率获得等离子体的度量，以及使用该度量来确定等离子体的至少一个特性。在另一个实施例中，一种用于确定等离子体特性的方法包括获得与不同频率耦合到等离子体的第一波形和第二波形的电流和电压信息的度量，使用从每个不同频率波形获得的度量来确定等离子体的至少一个特性。在另一个实施例中，该方法包括提供作为频率的函数的等离子体的等离子体阻抗模型，以及使用模型确定等离子体的至少一个特性。

10. 发明授权

US07286948B1 Method for determining plasma characteristics 失效
标题翻译：确定等离子体特性的方法
公开(公告)号：US07286948B1
公开(公告)日：2007-10-23
申请号：US11424705
申请日：2006-06-16
申请人： Steven C. Shannon , Daniel J. Hoffman , Jeremiah T. P. Pender , Tarreg Mawari
发明人： Steven C. Shannon , Daniel J. Hoffman , Jeremiah T. P. Pender , Tarreg Mawari
IPC分类号： G01R23/16
CPC分类号： H05H1/0081 , H01J37/32174 , H01J37/32935 , H01L21/67005
摘要： Methods for determining characteristics of a plasma are provided. In one embodiment, a method for determining characteristics of a plasma includes obtaining metrics of current and voltage information for first and second waveforms coupled to a plasma at different frequencies, determining at least one characteristic of the plasma using the metrics obtained from each different frequency waveform. In another embodiment, the method includes providing a plasma impedance model of a plasma as a function of frequency, and determining at least one characteristic of a plasma using model. In yet another embodiment, the method includes providing a plasma impedance model of a plasma as a function of frequency, measuring current and voltage for waveforms coupled to the plasma and having at least two different frequencies, and determining ion mass of a plasma from model and the measured current and voltage of the waveforms.
摘要翻译：提供了确定等离子体特性的方法。在一个实施例中，用于确定等离子体特性的方法包括获得与不同频率耦合到等离子体的第一和第二波形的电流和电压信息的度量，使用从每个不同频率波形获得的度量来确定等离子体的至少一个特性。在另一个实施例中，该方法包括提供作为频率的函数的等离子体的等离子体阻抗模型，以及使用模型确定等离子体的至少一个特性。在另一个实施例中，该方法包括提供作为频率的函数的等离子体的等离子体阻抗模型，测量耦合到等离子体并具有至少两个不同频率的波形的电流和电压，以及从模型确定等离子体的离子质量，测量的电流和电压的波形。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式