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51. 发明授权

US06338991B1 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06338991B1
公开(公告)日：2002-01-15
申请号：US09439997
申请日：1999-11-15
申请人： Hongyong Zhang , Hideki Uochi , Toru Takayama , Takeshi Fukunaga , Yasuhiko Takemura
发明人： Hongyong Zhang , Hideki Uochi , Toru Takayama , Takeshi Fukunaga , Yasuhiko Takemura
IPC分类号： H01L2184
CPC分类号： H01L21/02672 , G09G2300/0408 , H01L21/02532 , H01L21/2022 , H01L27/1251 , H01L27/1277 , H01L27/1281 , H01L29/66757
摘要： A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, parad.ium, osmium, iridium, platinum, scandium, titanium, vanadium, chrome, manganese, copper, zinc, gold, silver or silicide thereof in a form of island, line, stripe, dot or film on or under an amorphous silicon film and using them as a starting point, by advancing its crystallization by annealing at a temperature lower than a normal crystallization temperature of an amorphous silicon. A transistor whose leak current is low and a transistor in which a mobility is high are obtained in the same time in structuring a dynamic circuit having a thin film transistor by selectively forming a cover film on a semiconductor layer which is to become an active layer of the transistor and by thermally crystallizing it thereafter.
摘要翻译：提供了使用晶体硅膜制造诸如薄膜晶体管的半导体器件的方法。通过选择性地形成含有镍，铁，钴，钌，铑，锶，锇，铱，铂，钪，钛，钒，铬，锰，铜，锌，金，，银或硅化物以岛，线，条，点或膜的形式存在于非晶硅膜上或下方，并以它们为起始点，通过在低于正常结晶温度的温度下进行退火，非晶硅。通过在要成为有源层的半导体层上选择性地形成覆盖膜，通过在构成具有薄膜晶体管的动态电路的同时获得泄漏电流低的晶体管和迁移率高的晶体管晶体管，然后通过其热结晶。

52. 发明授权

US06337231B1 Method for producing semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US06337231B1
公开(公告)日：2002-01-08
申请号：US09532899
申请日：2000-03-22
申请人： Hongyong Zhang , Yasuhiko Takemura , Toru Takayama
发明人： Hongyong Zhang , Yasuhiko Takemura , Toru Takayama
IPC分类号： H01L2100
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/02686 , H01L21/2022 , H01L21/2026 , H01L27/12 , H01L27/1277 , H01L29/04 , H01L29/66757
摘要： A silicon film provided on a blocking film 102 on a substrate 101 is made amorphous by doping Si+, and in a heat-annealing process, crystallization is started in parallel to a substrate from an area 100 where nickel serving as a crystallization-promoting, catalyst is introduced.
摘要翻译：通过掺杂Si +将设置在基片101上的阻挡膜102上的硅膜制成无定形的，并且在热退火过程中，从作为结晶促进催化剂的镍的区域100开始平行于基底的结晶被介绍。

53. 发明授权

US6060725A Thin film transistor using a semiconductor film 失效
标题翻译：使用半导体膜的薄膜晶体管
公开(公告)号：US6060725A
公开(公告)日：2000-05-09
申请号：US933342
申请日：1997-09-19
申请人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura
发明人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura
IPC分类号： H01L21/00 , H01L21/20 , H01L21/265 , H01L21/28 , H01L21/285 , H01L21/336 , H01L29/36 , H01L29/49 , H01L29/772 , H01L29/78 , H01L29/786 , H01L29/76 , H01L29/04 , H01L27/01
CPC分类号： H01L21/26506 , H01L21/02532 , H01L21/02672 , H01L29/4908 , H01L29/66757 , H01L29/66765 , H01L29/78618 , H01L29/78675 , H01L29/78678
摘要： A thin film transistor including a semiconductor film including silicon formed on an insulating surface; a channel region formed within the semiconductor film; and source and drain regions formed within the semiconductor film with the channel region interposed between the source and drain regions, each of the source and drain regions having one conductivity type, wherein the source and drain regions contain a catalyst element for promoting a crystallization of silicon at a concentration not higher that 1.times.10.sup.20 atoms/cm.sup.3, and wherein a concentration of the catalyst element in the channel region is lower than 1.times.10.sup.17 atoms/cm.sup.3 and the concentration in the channel region is lower than that in the source and drain regions.
摘要翻译：一种薄膜晶体管，包括形成在绝缘表面上的包括硅的半导体膜; 形成在半导体膜内的沟道区; 以及源极和漏极区域，其形成在半导体膜内，沟道区域插入在源极和漏极区域之间，源极和漏极区域中的每一个具有一种导电类型，其中源极和漏极区域包含用于促进硅的结晶的催化剂元件浓度不高于1×10 20原子/ cm 3，并且其中沟道区中的催化剂元素的浓度低于1×10 17原子/ cm 3，并且沟道区中的浓度低于源区和漏区中的浓度。

54. 发明授权

US5977559A Thin-film transistor having a catalyst element in its active regions 失效
标题翻译：薄膜晶体管在其活性区域中具有催化剂元素
公开(公告)号：US5977559A
公开(公告)日：1999-11-02
申请号：US48014
申请日：1998-03-26
申请人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura
发明人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura
IPC分类号： H01L21/20 , H01L21/336 , H01L29/786 , H01C31/036
CPC分类号： H01L29/66757 , H01L21/2022 , H01L29/78675 , H01L29/78621
摘要： A thin-film transistor (TFT) which has a crystalline silicon active layer of excellent reliability and characteristics, and a method of fabricating such a TFT inexpensively are provided. In a TFT which has at least two low density impurity regions and a source/drain adjacent to a channel-forming region, catalyst elements which cause amorphous silicon to crystallize are included in the source/drain, and the density of said catalyst elements in the interface between the channel-forming region and the low-density impurity regions is less than that in the source/drain.
摘要翻译：提供具有优异的可靠性和特性的晶体硅有源层的薄膜晶体管（TFT）以及廉价地制造这种TFT的方法。在具有至少两个低密度杂质区域和与沟道形成区域相邻的源极/漏极的TFT中，在源极/漏极中包括引起非晶硅结晶的催化剂元件，并且所述催化剂元件的密度在沟道形成区域和低浓度杂质区域之间的界面小于源极/漏极中的界面。

55. 发明授权

US5888857A Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US5888857A
公开(公告)日：1999-03-30
申请号：US661013
申请日：1996-06-10
申请人： Hongyong Zhang , Hideki Uochi , Toru Takayama , Takeshi Fukunaga , Yasuhiko Takemura
发明人： Hongyong Zhang , Hideki Uochi , Toru Takayama , Takeshi Fukunaga , Yasuhiko Takemura
IPC分类号： H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L21/00 , H01L21/36
CPC分类号： H01L29/66757 , H01L21/2022 , H01L27/1277 , G09G2300/0408
摘要： A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum, scandium, titanium, vanadium, chrome, manganese, copper, zinc, gold, silver or silicide thereof in a form of island, line, stripe, dot or film on or under an amorphous silicon film and using them as a starting point, by advancing its crystallization by annealing at a temperature lower than a normal crystallization temperature of an amorphous silicon. A transistor whose leak current is low and a transistor in which a mobility is high are obtained in the same time in structuring a dynamic circuit having a thin film transistor by selectively forming a cover film on a semiconductor layer which is to become an active layer of the transistor and by thermally crystallizing it thereafter.
摘要翻译：提供了使用晶体硅膜制造诸如薄膜晶体管的半导体器件的方法。通过选择性地形成包含镍，铁，钴，钌，铑，钯，锇，铱，铂，钪，钛，钒，铬，锰，铜，锌，金，银的薄膜，颗粒或簇而获得晶体硅膜或其硅化物以岛状，线状，条状，点状或薄膜形式存在于非晶硅膜上或下方，并以它们为起始点，通过在比非晶硅的正常结晶温度低的温度下进行退火，。通过在要成为有源层的半导体层上选择性地形成覆盖膜，通过在构成具有薄膜晶体管的动态电路的同时获得泄漏电流低的晶体管和迁移率高的晶体管晶体管，然后通过其热结晶。

56. 发明授权

US5783468A Semiconductor circuit and method of fabricating the same 失效
公开(公告)号：US5783468A
公开(公告)日：1998-07-21
申请号：US630628
申请日：1996-04-10
申请人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura
发明人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura
IPC分类号： G02F1/1362 , H01L21/20 , H01L21/77 , H01L21/84
CPC分类号： H01L27/1277 , G02F1/13454 , H01L21/02532 , H01L21/02672 , H01L21/02686
摘要： Method of fabricating a semiconductor circuit is initiated with formation of an amorphous silicon film. Then, a second layer containing at least one catalytic element is so formed as to be in intimate contact with the amorphous silicon film, or the catalytic element is introduced into the amorphous silicon film. This amorphous silicon film is selectively irradiated with laser light or other equivalent intense light to crystallize the amorphous silicon film.

57. 发明授权

US5614733A Semiconductor device having crystalline thin film transistors 失效
标题翻译：具有晶体薄膜晶体管的半导体器件
公开(公告)号：US5614733A
公开(公告)日：1997-03-25
申请号：US354502
申请日：1994-12-12
申请人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura
发明人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura
IPC分类号： G02F1/1362 , H01L21/20 , H01L21/77 , H01L21/84 , H01L29/76 , H01L31/036 , H01L31/112
CPC分类号： H01L27/1277 , G02F1/13454 , H01L21/02532 , H01L21/02672 , H01L21/02686
摘要： A semiconductor device has a first thin film transistor and a second thin film transistor formed on a substrate. Both of the first and second thin film transistor have a crystallized channel region. One of the first and second thin film transistor is doped with a catalyst metal at a sufficient concentration for promoting the crystallization of the channel region which the other of the first and second thin film transistors is not doped with the catalyst metal.
摘要翻译：半导体器件具有形成在衬底上的第一薄膜晶体管和第二薄膜晶体管。第一和第二薄膜晶体管都具有晶化的沟道区。第一和第二薄膜晶体管之一以足够的浓度掺杂有催化剂金属，以促进第一和第二薄膜晶体管中的另一个不掺杂催化剂金属的沟道区的结晶。

58. 发明授权

US5595923A Method of forming a thin film transistor 失效
标题翻译：形成薄膜晶体管的方法
公开(公告)号：US5595923A
公开(公告)日：1997-01-21
申请号：US467986
申请日：1995-06-06
申请人： Hongyong Zhang , Hideki Uochi , Toru Takayama , Yasuhiko Takemura , Mutsuo Yamamoto
发明人： Hongyong Zhang , Hideki Uochi , Toru Takayama , Yasuhiko Takemura , Mutsuo Yamamoto
IPC分类号： G02F1/1362 , H01L21/20 , H01L21/336 , H01L21/8238 , H01L27/092 , H01L27/12 , H01L29/786 , H01L21/84
CPC分类号： H01L27/1251 , H01L21/2022 , H01L21/8238 , H01L27/0922 , H01L27/1237 , H01L27/1277 , H01L29/66757 , H01L29/78618 , H01L29/78675 , G02F1/13454 , Y10S148/016
摘要： A substance containing a catalyst element is formed so as to closely contact with an amorphous silicon film, or a catalyst element is introduced into the amorphous silicon film. The amorphous silicon film is annealed at a temperature which is lower than a crystallization temperature of usual amorphous silicon, thereby selectively crystallizing the amorphous silicon film. The crystallized region is used as a crystalline silicon TFT which can be used in a peripheral driver circuit of an active matrix circuit. The region which remains amorphous is used as an amorphous silicon TFT which can be used in a pixel circuit. A relatively small amount of a catalyst element for promoting crystallization is added to an amorphous silicon film, and an annealing process is conducted at a temperature which is lower than the distortion temperature of a substrate, thereby crystallizing the amorphous silicon film. A gate insulating film, and a gate electrode are then formed, and an impurity is implanted in a self-alignment manner. A film containing a catalyst element for promoting crystallization is closely contacted with the impurity region, or a relatively large amount of a catalyst element is introduced into the impurity region by an ion implantation or the like. Then, an annealing process is conducted at a temperature which is lower than the distortion temperature of the substrate, thereby activating the doping impurity.
摘要翻译：形成含有催化剂元素的物质，以与非晶硅膜紧密接触，或将催化剂元素引入到非晶硅膜中。非晶硅膜在比通常的非晶硅的结晶温度低的温度下退火，从而选择性地使非晶硅膜结晶。结晶区域用作可用于有源矩阵电路的外围驱动电路的晶体硅TFT。保持非晶形的区域用作可用于像素电路中的非晶硅TFT。在非晶硅膜中添加相对少量的促进结晶的催化剂元素，并且在比基板的变形温度低的温度下进行退火处理，从而使非晶硅膜结晶。然后形成栅极绝缘膜和栅电极，并以自对准的方式注入杂质。含有促进结晶的催化剂元素的膜与杂质区紧密接触，或者通过离子注入等将相对大量的催化剂元素引入杂质区。然后，在比基板的变形温度低的温度下进行退火处理，从而激活掺杂杂质。

59. 发明授权

US07622335B2 Method for manufacturing a thin film transistor device 失效
标题翻译：制造薄膜晶体管器件的方法
公开(公告)号：US07622335B2
公开(公告)日：2009-11-24
申请号：US10926059
申请日：2004-08-26
申请人： Hongyong Zhang , Hideki Uochi , Toru Takayama , Takeshi Fukunaga , Yasuhiko Takemura
发明人： Hongyong Zhang , Hideki Uochi , Toru Takayama , Takeshi Fukunaga , Yasuhiko Takemura
IPC分类号： H01L21/00
CPC分类号： H01L21/02672 , G09G2300/0408 , H01L21/02532 , H01L21/2022 , H01L27/1251 , H01L27/1277 , H01L27/1281 , H01L29/66757
摘要： A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum, scandium, titanium, vanadium, chrome, manganese, copper, zinc, gold, silver or silicide thereof in a form of island, line, stripe, dot or film on or under an amorphous silicon film and using them as a starting point, by advancing its crystallization by annealing at a temperature lower than a normal crystallization temperature of an amorphous silicon. A transistor whose leak current is low and a transistor in which a mobility is high are obtained in the same time in structuring a dynamic circuit having a thin film transistor by selectively forming a cover film on a semiconductor layer which is to become an active layer of the transistor and by thermally crystallizing it thereafter.
摘要翻译：提供了使用晶体硅膜制造诸如薄膜晶体管的半导体器件的方法。通过选择性地形成包含镍，铁，钴，钌，铑，钯，锇，铱，铂，钪，钛，钒，铬，锰，铜，锌，金，银的薄膜，颗粒或簇而获得晶体硅膜或其硅化物以岛状，线状，条状，点状或薄膜形式存在于非晶硅膜上或下方，并以它们为起始点，通过在比非晶硅的正常结晶温度低的温度下进行退火，。通过在要成为有源层的半导体层上选择性地形成覆盖膜，通过在构成具有薄膜晶体管的动态电路的同时获得漏电流低的晶体管和迁移率高的晶体管晶体管，然后通过其热结晶。

60. 发明授权

US06451638B1 Semiconductor and process for fabricating the same 失效
标题翻译：半导体及其制造方法
公开(公告)号：US06451638B1
公开(公告)日：2002-09-17
申请号：US09640078
申请日：2000-08-17
申请人： Hongyong Zhang , Hideki Uochi , Toru Takayama , Shunpei Yamazaki , Yasuhiko Takemura
发明人： Hongyong Zhang , Hideki Uochi , Toru Takayama , Shunpei Yamazaki , Yasuhiko Takemura
IPC分类号： H01L2184
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/2022 , H01L27/1281 , H01L29/66757
摘要： A process for fabricating a semiconductor by crystallizing a silicon film in a substantially amorphous state by annealing it at a temperature not higher than the crystallization temperature of amorphous silicon, and it comprises forming selectively, on the surface or under an amorphous silicon film, a coating, particles, clusters, and the like containing nickel, iron, cobalt, platinum or palladium either as a pure metal or a compound thereof such as a silicide, a salt, and the like, shaped into island-like portions, linear portions, stripes, or dots; and then annealing the resulting structure at a temperature lower than the crystallization temperature of an amorphous silicon by 20 to 150° C.
摘要翻译：一种通过在不高于非晶硅的结晶温度的温度下进行退火将基本无定形态的硅膜结晶化的半导体制造方法，其包括在表面上或非晶硅膜下选择性地形成涂层，含有镍，铁，钴，铂或钯的颗粒，簇等作为纯金属或其化合物，例如硅化物，盐等，成形为岛状部分，线状部分，条纹，或点; 然后在低于非晶硅的结晶温度的温度下将所得结构退火20〜150℃。

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