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    • 55. 发明授权
    • AC surface discharge type plasma display panel
    • 交流表面放电型等离子体显示面板
    • US07112922B2
    • 2006-09-26
    • US10505077
    • 2004-03-25
    • Hiroyuki TachibanaTomohiro MurakosoYasuyuki NoguchiTetsuya Shirai
    • Hiroyuki TachibanaTomohiro MurakosoYasuyuki NoguchiTetsuya Shirai
    • H01J17/49
    • H01J11/12H01J11/28H01J11/40
    • A plasma display panel has address properties stabilized. A priming discharge is performed between auxiliary electrodes (17), which are formed on a front substrate (1) and coupled with scan electrodes (6) and priming electrodes (14) formed on a back substrate (2). Furthermore, a material layer (5) containing at least one of alkali metal oxide, alkaline earth metal oxide and fluoride is provided on regions corresponding to priming discharge spaces (30) (gap parts 13) on the back substrate (2). As a result, the priming discharge has a wider margin, and a supply of priming particles to the discharge cells is stabilized, whereby a discharge delay during the addressing is reduced, and the address properties are stabilized.
    • 等离子体显示面板具有稳定的地址特性。 在形成在前基板(1)上并与形成在背面基板(2)上的扫描电极(6)和起动电极(14)耦合的辅助电极(17)之间进行起动放电。 此外,在与背面基板(2)上的引燃放电空间(30)(间隙部13)对应的区域上设置含有碱金属氧化物,碱土金属氧化物和氟化物中的至少一种的材料层(5)。 结果,引发放电具有更宽的余量,并且向放电单元提供引发粒子的稳定化,从而降低寻址期间的放电延迟,并且寻址性能稳定。
    • 57. 发明授权
    • Atomic layer growing apparatus
    • 原子层生长装置
    • US08202367B2
    • 2012-06-19
    • US12295194
    • 2007-03-28
    • Hiroyuki TachibanaKazutoshi MurataNozomu Hattori
    • Hiroyuki TachibanaKazutoshi MurataNozomu Hattori
    • C23C16/54
    • C23C16/45544C23C16/4485
    • An atomic layer growing apparatus includes a film forming chamber (101) in which the vapor phase growth of a film is performed, a substrate table (102) having a heating mechanism accommodated in the film forming chamber (101), and an exhaust mechanism (104). The atomic layer growing apparatus also includes a material supply unit (105) including a material vaporizer (151), two buffer tanks, i.e., a buffer tank A (152a) and buffer tank B (152b), a fill valve A (153a) and supply valve A (154a) of the buffer tank A (152a), a fill valve B (153b) and supply valve B (154b) of the buffer tank B (152b), an injection control valve (155), and a control unit (156) which controls the opening/closing of each valve.
    • 原子层生长装置包括其中进行膜的气相生长的成膜室(101),具有容纳在成膜室(101)中的加热机构的基板台(102)和排气机构 104)。 原子层生长装置还包括材料供给单元(105),其包括材料蒸发器(151),两个缓冲罐,即缓冲罐A(152a)和缓冲罐B(152b),填充阀A(153a) 缓冲罐B(152a)的缓冲罐A(152a)的供给阀A(154a),缓冲罐B(152b)的填充阀B(153b)和供给阀B(154b),喷射控制阀(155) 单元(156),其控制每个阀的打开/关闭。
    • 60. 发明申请
    • ATOMIC LAYER DEPOSITION APPARATUS AND ATOMIC LAYER DEPOSITION METHOD
    • 原子层沉积装置和原子层沉积法
    • US20100323125A1
    • 2010-12-23
    • US12865763
    • 2009-02-17
    • Hiroyuki Tachibana
    • Hiroyuki Tachibana
    • C23C16/00H05H1/24
    • H05H1/46C23C16/452C23C16/45536C23C16/45544H01J37/32009H01L21/3141
    • An atomic layer deposition apparatus includes: a first chamber which is surrounded by walls including a supply hole for the reactive gas formed thereon; a second chamber which is surrounded by walls including a supply hole for a source gas formed thereon; an antenna array which is provided in the first chamber, the antenna array having a plurality of rod-shaped antenna elements provided in parallel respectively to produce the plasma using the reactive gas; a substrate stage which is provided in the second chamber, the substrate being placed on the substrate stage; and a connecting member which connects the first chamber and the second chamber to supply gas containing reactive gas radical from the first chamber to the second chamber, the reactive gas radical being produced using the antenna array.
    • 原子层沉积设备包括:由壁围绕的第一室,包括在其上形成的反应气体的供应孔; 由壁围绕的第二室,包括形成在其上的源气体的供给孔; 设置在第一室中的天线阵列,天线阵列具有分别平行设置的多个棒状天线元件,以使用反应气体产生等离子体; 设置在所述第二室中的衬底台,所述衬底被放置在所述衬底台上; 以及连接构件,其连接所述第一室和所述第二室以将包含反应性气体自由基的气体从所述第一室供应到所述第二室,所述反应性气体自由基使用所述天线阵列产生。