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1. 发明申请

US20110303147A1 ATOMIC LAYER DEPOSITION APPARATUS 有权
标题翻译：原子层沉积装置
公开(公告)号：US20110303147A1
公开(公告)日：2011-12-15
申请号：US13203381
申请日：2010-02-15
申请人： Hiroyuki Tachibana , Kazutoshi Murata , Naomasa Miyatake , Yasunari Mori
发明人： Hiroyuki Tachibana , Kazutoshi Murata , Naomasa Miyatake , Yasunari Mori
IPC分类号： C23C16/44 , C23C16/455
CPC分类号： C23C16/4409 , C23C16/4407 , C23C16/45544 , C23C16/4583 , C23C16/46 , C23C16/54
摘要： An atomic layer deposition apparatus for forming a thin film on a substrate, including a first container that defines a first inner space, a second container provided inside the first container to define a second inner space, the second container being canister-shaped and including a first opening at one end thereof, a source gas that forms the thin film on the substrate flowing to the second inner space through the first opening, and a pressing member including a gas supply port for supplying the source gas to the second inner space through the first opening, the pressing member being configured to press the second container in a longitudinal direction of the second container so that the second inner space be separated from the first inner space.
摘要翻译：一种用于在基板上形成薄膜的原子层沉积装置，包括限定第一内部空间的第一容器，设置在第一容器内部以限定第二内部空间的第二容器，第二容器为罐形，在其一端的第一开口，在通过第一开口流到第二内部空间的基板上形成薄膜的源气体，以及包括气体供给口的加压构件，该气体供给口用于通过该第二内部空间供给源气体，第一开口，所述按压部件构造成沿着所述第二容器的长度方向按压所述第二容器，使得所述第二内部空间与所述第一内部空间分离。

2. 发明授权

US09194043B2 Atomic layer deposition apparatus 有权
标题翻译：原子层沉积装置
公开(公告)号：US09194043B2
公开(公告)日：2015-11-24
申请号：US13203381
申请日：2010-02-15
申请人： Hiroyuki Tachibana , Kazutoshi Murata , Naomasa Miyatake , Yasunari Mori
发明人： Hiroyuki Tachibana , Kazutoshi Murata , Naomasa Miyatake , Yasunari Mori
IPC分类号： C23C16/44 , C23C16/46 , C23C16/455 , C23C16/54 , C23C16/458
CPC分类号： C23C16/4409 , C23C16/4407 , C23C16/45544 , C23C16/4583 , C23C16/46 , C23C16/54
摘要： An atomic layer deposition apparatus for forming a thin film on a substrate, including a first container that defines a first inner space, a second container provided inside the first container to define a second inner space, the second container being canister-shaped and including a first opening at one end thereof, a source gas that forms the thin film on the substrate flowing to the second inner space through the first opening, and a pressing member including a gas supply port for supplying the source gas to the second inner space through the first opening, the pressing member being configured to press the second container in a longitudinal direction of the second container so that the second inner space be separated from the first inner space.
摘要翻译：一种用于在基板上形成薄膜的原子层沉积装置，包括限定第一内部空间的第一容器，设置在第一容器内部以限定第二内部空间的第二容器，第二容器为罐形，在其一端的第一开口，在通过第一开口流到第二内部空间的基板上形成薄膜的源气体，以及包括气体供给口的加压构件，该气体供给口用于通过该第二内部空间供给源气体，第一开口，所述按压部件构造成沿着所述第二容器的长度方向按压所述第二容器，使得所述第二内部空间与所述第一内部空间分离。

3. 发明申请

US20090291232A1 METHOD AND APPARATUS FOR GROWING PLASMA ATOMIC LAYER 失效
标题翻译：用于生长等离子体原子层的方法和装置
公开(公告)号：US20090291232A1
公开(公告)日：2009-11-26
申请号：US12294428
申请日：2007-03-28
申请人： Keisuki Washio , Kazutoshi Murata , Naomasa Miyatake , Hiroyuki Tachibana , Nozomu Hattori
发明人： Keisuki Washio , Kazutoshi Murata , Naomasa Miyatake , Hiroyuki Tachibana , Nozomu Hattori
IPC分类号： C23C16/44 , C23C16/54
CPC分类号： C23C16/402 , C23C16/45542 , C23C16/5096 , H01L21/02164 , H01L21/02222 , H01L21/02274 , H01L21/0228 , H01L21/3141 , H01L21/31612
摘要： Oxygen gas, for example, is introduced into a film forming chamber, and high-frequency power is supplied to a plurality of monopole antennas arranged above a silicon substrate (101) in the film forming chamber to generate a plasma of the introduced oxygen gas, thereby supplying atomic oxygen (123) onto the surface of an aminosilane molecular layer (102). This plasma generation is performed for about 1 sec. With this operation, the adsorption layer (102) adsorbed onto the surface of the silicon substrate (101) is oxidized, thereby forming a silicon oxide layer (112) corresponding to one atomic layer of silicon on the surface of the silicon substrate (101).
摘要翻译：例如，将氧气引入成膜室，向成膜室内的硅基板（101）上方配置的多个单极天线供给高频电力，生成引入氧气的等离子体，从而将原子氧（123）提供到氨基硅烷分子层（102）的表面上。执行该等离子体生成约1秒。通过该操作，吸附在硅衬底（101）的表面上的吸附层（102）被氧化，从而在硅衬底（101）的表面上形成对应于一个原子层硅的氧化硅层（112）。

4. 发明授权

US08440268B2 Method and apparatus for growing plasma atomic layer 失效
标题翻译：用于生长等离子体原子层的方法和装置
公开(公告)号：US08440268B2
公开(公告)日：2013-05-14
申请号：US12294428
申请日：2007-03-28
申请人： Keisuki Washio , Kazutoshi Murata , Naomasa Miyatake , Hiroyuki Tachibana , Nozomu Hattori
发明人： Keisuki Washio , Kazutoshi Murata , Naomasa Miyatake , Hiroyuki Tachibana , Nozomu Hattori
IPC分类号： H05H1/24
CPC分类号： C23C16/402 , C23C16/45542 , C23C16/5096 , H01L21/02164 , H01L21/02222 , H01L21/02274 , H01L21/0228 , H01L21/3141 , H01L21/31612
摘要： Oxygen gas, for example, is introduced into a film forming chamber, and high-frequency power is supplied to a plurality of monopole antennas arranged above a silicon substrate (101) in the film forming chamber to generate a plasma of the introduced oxygen gas, thereby supplying atomic oxygen (123) onto the surface of an aminosilane molecular layer (102). This plasma generation is performed for about 1 sec. With this operation, the adsorption layer (102) adsorbed onto the surface of the silicon substrate (101) is oxidized, thereby forming a silicon oxide layer (112) corresponding to one atomic layer of silicon on the surface of the silicon substrate (101).
摘要翻译：例如，将氧气引入成膜室，向成膜室内的硅基板（101）上方配置的多个单极天线供给高频电力，生成引入氧气的等离子体，从而将原子氧（123）提供到氨基硅烷分子层（102）的表面上。执行该等离子体生成约1秒。通过该操作，吸附在硅衬底（101）的表面上的吸附层（102）被氧化，从而在硅衬底（101）的表面上形成对应于一个原子层硅的氧化硅层（112）。

5. 发明授权

US08202367B2 Atomic layer growing apparatus 有权
标题翻译：原子层生长装置
公开(公告)号：US08202367B2
公开(公告)日：2012-06-19
申请号：US12295194
申请日：2007-03-28
申请人： Hiroyuki Tachibana , Kazutoshi Murata , Nozomu Hattori
发明人： Hiroyuki Tachibana , Kazutoshi Murata , Nozomu Hattori
IPC分类号： C23C16/54
CPC分类号： C23C16/45544 , C23C16/4485
摘要： An atomic layer growing apparatus includes a film forming chamber (101) in which the vapor phase growth of a film is performed, a substrate table (102) having a heating mechanism accommodated in the film forming chamber (101), and an exhaust mechanism (104). The atomic layer growing apparatus also includes a material supply unit (105) including a material vaporizer (151), two buffer tanks, i.e., a buffer tank A (152a) and buffer tank B (152b), a fill valve A (153a) and supply valve A (154a) of the buffer tank A (152a), a fill valve B (153b) and supply valve B (154b) of the buffer tank B (152b), an injection control valve (155), and a control unit (156) which controls the opening/closing of each valve.
摘要翻译：原子层生长装置包括其中进行膜的气相生长的成膜室（101），具有容纳在成膜室（101）中的加热机构的基板台（102）和排气机构 104）。原子层生长装置还包括材料供给单元（105），其包括材料蒸发器（151），两个缓冲罐，即缓冲罐A（152a）和缓冲罐B（152b），填充阀A（153a）缓冲罐B（152a）的缓冲罐A（152a）的供给阀A（154a），缓冲罐B（152b）的填充阀B（153b）和供给阀B（154b），喷射控制阀（155）单元（156），其控制每个阀的打开/关闭。

6. 发明申请

US20090266296A1 ATOMIC LAYER GROWING APPARATUS 有权
标题翻译：原子层生长装置
公开(公告)号：US20090266296A1
公开(公告)日：2009-10-29
申请号：US12295194
申请日：2007-03-28
申请人： Hiroyuki Tachibana , Kazutoshi Murata , Nozomu Hattori
发明人： Hiroyuki Tachibana , Kazutoshi Murata , Nozomu Hattori
IPC分类号： C23C16/54
CPC分类号： C23C16/45544 , C23C16/4485
摘要： An atomic layer growing apparatus includes a film forming chamber (101) in which the vapor phase growth of a film is performed, a substrate table (102) having a heating mechanism accommodated in the film forming chamber (101), and an exhaust mechanism (104). The atomic layer growing apparatus also includes a material supply unit (105) including a material vaporizer (151), two buffer tanks, i.e., a buffer tank A (152a) and buffer tank B (152b), a fill valve A (153a) and supply valve A (154a) of the buffer tank A (152a), a fill valve B (153b) and supply valve B (154b) of the buffer tank B (152b), an injection control valve (155), and a control unit (156) which controls the opening/closing of each valve.
摘要翻译：原子层生长装置包括其中进行膜的气相生长的成膜室（101），具有容纳在成膜室（101）中的加热机构的基板台（102）和排气机构 104）。原子层生长装置还包括材料供给单元（105），其包括材料蒸发器（151），两个缓冲罐，即缓冲罐A（152a）和缓冲罐B（152b），填充阀A（153a）缓冲罐B（152a）的缓冲罐A（152a）的供给阀A（154a），缓冲罐B（152b）的填充阀B（153b）和供给阀B（154b），喷射控制阀（155）单元（156），其控制每个阀的打开/关闭。

7. 发明授权

US08607733B2 Atomic layer deposition apparatus and atomic layer deposition method 失效
标题翻译：原子层沉积装置和原子层沉积法
公开(公告)号：US08607733B2
公开(公告)日：2013-12-17
申请号：US12865763
申请日：2009-02-17
申请人： Hiroyuki Tachibana
发明人： Hiroyuki Tachibana
IPC分类号： C23C16/505 , C23C16/50 , C23C16/44 , C23C16/00
CPC分类号： H05H1/46 , C23C16/452 , C23C16/45536 , C23C16/45544 , H01J37/32009 , H01L21/3141
摘要： An atomic layer deposition apparatus includes: a first chamber which is surrounded by walls including a supply hole for the reactive gas formed thereon; a second chamber which is surrounded by walls including a supply hole for a source gas formed thereon; an antenna array which is provided in the first chamber, the antenna array having a plurality of rod-shaped antenna elements provided in parallel respectively to produce the plasma using the reactive gas; a substrate stage which is provided in the second chamber, the substrate being placed on the substrate stage; and a connecting member which connects the first chamber and the second chamber to supply gas containing reactive gas radical from the first chamber to the second chamber, the reactive gas radical being produced using the antenna array.
摘要翻译：原子层沉积设备包括：由壁围绕的第一室，包括在其上形成的反应气体的供应孔; 由壁围绕的第二室，包括形成在其上的源气体的供给孔; 设置在第一室中的天线阵列，天线阵列具有分别平行设置的多个棒状天线元件，以使用反应气体产生等离子体; 设置在所述第二室中的衬底台，所述衬底被放置在所述衬底台上; 以及连接构件，其连接所述第一室和所述第二室以将包含反应性气体自由基的气体从所述第一室供应到所述第二室，所述反应性气体自由基使用所述天线阵列产生。

8. 发明授权

US07988577B2 Friction drive belt and method for fabricating the same 有权
标题翻译：摩擦传动带及其制造方法
公开(公告)号：US07988577B2
公开(公告)日：2011-08-02
申请号：US12091054
申请日：2007-07-09
申请人： Manabu Omori , Hiroyuki Shiriike , Hiroyuki Tachibana
发明人： Manabu Omori , Hiroyuki Shiriike , Hiroyuki Tachibana
IPC分类号： F16G1/28
CPC分类号： F16G5/20
摘要： In a friction drive belt B, at least a contact part 13 of a belt body 10 with a pulley is made of an elastomer composition. The contact part 13 of the belt body 10 with a pulley has a large number of cellular pores 15 formed in the contact surface with the pulley.
摘要翻译：在摩擦传动带B中，具有带轮的带体10的至少接触部13由弹性体组合物制成。皮带主体10的带皮带轮的接触部分13具有形成在与皮带轮的接触表面中的大量细胞孔15。

9. 发明授权

US07330165B2 Method of driving plasma display panel 失效
标题翻译：驱动等离子体显示面板的方法
公开(公告)号：US07330165B2
公开(公告)日：2008-02-12
申请号：US10515599
申请日：2004-03-23
申请人： Hiroyuki Tachibana , Naoki Kosugi , Nobuaki Nagao , Ryuichi Murai
发明人： Hiroyuki Tachibana , Naoki Kosugi , Nobuaki Nagao , Ryuichi Murai
IPC分类号： G09G3/28
CPC分类号： G09G3/2948 , G09G3/293 , G09G3/2986
摘要： A method drives a plasma display panel including priming electrodes. In the writing period of a sub-field, prior to the scanning of respective scan electrodes, priming discharge is caused between the scan electrodes and the priming electrodes. The time interval between the application of voltage to the priming electrodes for causing the priming discharge and the scanning of the corresponding scan electrodes is set within 10 μs.
摘要翻译：一种方法驱动包括底漆电极的等离子体显示面板。在子场的写入周期中，在扫描各扫描电极之前，在扫描电极和引发电极之间引起引发放电。施加用于引发放电的电极和相应扫描电极的扫描之间的电压之间的时间间隔设定在10μs以内。

10. 发明授权

US07084569B2 Plasma display panel 失效
标题翻译：等离子显示面板
公开(公告)号：US07084569B2
公开(公告)日：2006-08-01
申请号：US10512580
申请日：2004-02-18
申请人： Hiroyuki Tachibana , Naoki Kosugi , Masafumi Okawa , Ryuichi Murai
发明人： Hiroyuki Tachibana , Naoki Kosugi , Masafumi Okawa , Ryuichi Murai
IPC分类号： H01J17/49
CPC分类号： H01J11/12 , H01J11/28 , H01J11/38 , H01J11/46
摘要： A highly reliable plasma display panel is provided with less difference in wiring resistance, which can be driven at high speed even though the front or rear board has multilayer electrode wiring. A data electrode is covered with a dielectric layer, and a priming electrode is provided on the dielectric layer. An external wiring lead-out of the data electrode is provided on a rear substrate, and an external wiring lead-out of the priming electrode is provided on the dielectric layer. Wiring lead-out of the data electrode and wiring lead-out of the priming electrode have a step equivalent to the thickness of the dielectric layer.
摘要翻译：即使前板或后板具有多层电极布线，高可靠性等离子体显示面板的布线电阻差也较小。数据电极被覆盖有电介质层，并且在电介质层上设置引发电极。在后基板上设置有数据电极的外部布线引出线，并且在该电介质层上设置有引脚电极的外部引线。数据电极的接线引出和引发电极的引线引出具有等同于介电层厚度的步骤。

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