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1. 发明申请

US20110303147A1 ATOMIC LAYER DEPOSITION APPARATUS 有权
标题翻译：原子层沉积装置
公开(公告)号：US20110303147A1
公开(公告)日：2011-12-15
申请号：US13203381
申请日：2010-02-15
申请人： Hiroyuki Tachibana , Kazutoshi Murata , Naomasa Miyatake , Yasunari Mori
发明人： Hiroyuki Tachibana , Kazutoshi Murata , Naomasa Miyatake , Yasunari Mori
IPC分类号： C23C16/44 , C23C16/455
CPC分类号： C23C16/4409 , C23C16/4407 , C23C16/45544 , C23C16/4583 , C23C16/46 , C23C16/54
摘要： An atomic layer deposition apparatus for forming a thin film on a substrate, including a first container that defines a first inner space, a second container provided inside the first container to define a second inner space, the second container being canister-shaped and including a first opening at one end thereof, a source gas that forms the thin film on the substrate flowing to the second inner space through the first opening, and a pressing member including a gas supply port for supplying the source gas to the second inner space through the first opening, the pressing member being configured to press the second container in a longitudinal direction of the second container so that the second inner space be separated from the first inner space.
摘要翻译：一种用于在基板上形成薄膜的原子层沉积装置，包括限定第一内部空间的第一容器，设置在第一容器内部以限定第二内部空间的第二容器，第二容器为罐形，在其一端的第一开口，在通过第一开口流到第二内部空间的基板上形成薄膜的源气体，以及包括气体供给口的加压构件，该气体供给口用于通过该第二内部空间供给源气体，第一开口，所述按压部件构造成沿着所述第二容器的长度方向按压所述第二容器，使得所述第二内部空间与所述第一内部空间分离。

2. 发明申请

US20130008382A1 THIN-FILM FORMING DEVICE 审中-公开
标题翻译：薄膜成型装置
公开(公告)号：US20130008382A1
公开(公告)日：2013-01-10
申请号：US13635725
申请日：2011-03-17
申请人： Nozomu Hattori , Yasunari Mori
发明人： Nozomu Hattori , Yasunari Mori
IPC分类号： C23C16/455
CPC分类号： C23C16/45544 , C23C16/45548 , C23C16/4557 , C23C16/45591
摘要： This thin-film forming device includes: a deposition vessel in which a reduced-pressure deposition space, to which a raw material gas and a reactant gas are alternately supplied on different timings, is formed in order to form a thin film on the substrate; and a gas supply unit configured to supply the raw material gas and the reactant gas to the deposition vessel. The gas supply unit is provided with at least one partition that bends a gas passage from an inlet port of each of the raw material gas and the reactant gas toward the deposition space.
摘要翻译：该薄膜形成装置包括：沉积容器，其中在不同时刻交替地供给原料气体和反应气体的减压沉积空间，以在基板上形成薄膜; 以及气体供给单元，其构造成将原料气体和反应气体供给到所述沉积容器。气体供给单元具有将来自原料气体和反应气体的入口的气体通路朝向沉积空间弯曲的至少一个分隔壁。

3. 发明申请

US20100236917A1 PLASMA GENERATING APPARATUS AND PLASMA GENERATING METHOD 有权
标题翻译：等离子体发生装置和等离子体发生方法
公开(公告)号：US20100236917A1
公开(公告)日：2010-09-23
申请号：US12294531
申请日：2007-03-29
申请人： Yasunari Mori
发明人： Yasunari Mori
IPC分类号： H05H1/24
CPC分类号： H05H1/46 , H01J37/32082 , H01J37/32183
摘要： An impedance matching device is provided with a basic element having variable characteristic parameters for impedance matching, and an auxiliary element having variable characteristic parameters. At the time of generating plasma by using the impedance matching device, the characteristic parameters of the basic element of each antenna element are fixed, respectively, and the characteristic parameters of the auxiliary element are adjusted for each antenna element. Thus, in an adjusted status where impedance matching for each antenna element is adjusted, each antenna element of an antenna array is fed with a high frequency signal, an electromagnetic wave is radiated from the antenna element, the characteristic parameters of the basic element of each antenna element are synchronized and adjusted, and the impedances of the whole antenna array are matched.
摘要翻译：阻抗匹配装置设置有具有用于阻抗匹配的可变特征参数的基本元件和具有可变特征参数的辅助元件。在通过使用阻抗匹配装置产生等离子体时，各天线元件的基本元件的特征参数分别固定，并且为每个天线元件调整辅助元件的特性参数。因此，在调整每个天线元件的阻抗匹配的调整状态下，天线阵列的每个天线元件馈送高频信号，电磁波从天线元件辐射，每个天线元件的基本元件的特征参数天线元件被同步和调整，并且整个天线阵列的阻抗匹配。

4. 发明申请

US20110305836A1 ATOMIC LAYER DEPOSITION APPARATUS AND THIN FILM FORMING METHOD 有权
标题翻译：原子层沉积装置和薄膜形成方法
公开(公告)号：US20110305836A1
公开(公告)日：2011-12-15
申请号：US13203400
申请日：2010-03-03
申请人： Kazutoshi Murata , Yasunari Mori
发明人： Kazutoshi Murata , Yasunari Mori
IPC分类号： C23C16/458
CPC分类号： C23C16/45544 , C23C14/56 , C23C14/562 , C23C14/568 , C23C16/4401 , C23C16/4409 , C23C16/45525 , C23C16/45553 , C23C16/46 , C23C16/50 , C23C16/54 , H01J37/32752
摘要： An atomic layer deposition apparatus, which forms a thin film on a substrate, includes a first container that defines a first inner space and includes a substrate carrying-in and carrying-out port and a gas introduction port in different positions, the substrate being carried in and out through the substrate carrying-in and carrying-out port, gas being introduced through the gas introduction port to form the thin film on the substrate, a second container that is provided in the first container to define a second inner space separated from the first inner space, the second container including a first opening, a first moving mechanism that moves the second container in a predetermined direction, and a controller that controls the first moving mechanism such that the second container is moved to a first position where the substrate carrying-in and carrying-out port and the first opening are located opposite each other when the substrate is carried in and out, the controller controlling the first moving mechanism such that the second container is moved to a second position where the gas introduction port and the first opening are located opposite each other when the thin film is formed on the substrate.
摘要翻译：在基板上形成薄膜的原子层沉积装置包括：第一容器，其限定第一内部空间，并且包括基板搬入口和排出口;以及气体导入口，位于不同的位置，所述基板被承载通过所述基板输入和输出端口进出的气体，所述气体通过所述气体引入口引入以在所述基板上形成所述薄膜;第二容器，设置在所述第一容器中，以限定与所述第二内部空间分离的第二内部空间; 所述第一内部空间，所述第二容器包括第一开口，沿预定方向移动所述第二容器的第一移动机构;以及控制器，其控制所述第一移动机构，使得所述第二容器移动到所述第一位置，当输入和输出基板时，输入和输出端口和第一开口彼此相对定位，控制器控制 e第一移动机构，使得当在基板上形成薄膜时，第二容器移动到第二位置，在第二位置，气体导入口和第一开口彼此相对定位。

5. 发明授权

US09194043B2 Atomic layer deposition apparatus 有权
标题翻译：原子层沉积装置
公开(公告)号：US09194043B2
公开(公告)日：2015-11-24
申请号：US13203381
申请日：2010-02-15
申请人： Hiroyuki Tachibana , Kazutoshi Murata , Naomasa Miyatake , Yasunari Mori
发明人： Hiroyuki Tachibana , Kazutoshi Murata , Naomasa Miyatake , Yasunari Mori
IPC分类号： C23C16/44 , C23C16/46 , C23C16/455 , C23C16/54 , C23C16/458
CPC分类号： C23C16/4409 , C23C16/4407 , C23C16/45544 , C23C16/4583 , C23C16/46 , C23C16/54
摘要： An atomic layer deposition apparatus for forming a thin film on a substrate, including a first container that defines a first inner space, a second container provided inside the first container to define a second inner space, the second container being canister-shaped and including a first opening at one end thereof, a source gas that forms the thin film on the substrate flowing to the second inner space through the first opening, and a pressing member including a gas supply port for supplying the source gas to the second inner space through the first opening, the pressing member being configured to press the second container in a longitudinal direction of the second container so that the second inner space be separated from the first inner space.
摘要翻译：一种用于在基板上形成薄膜的原子层沉积装置，包括限定第一内部空间的第一容器，设置在第一容器内部以限定第二内部空间的第二容器，第二容器为罐形，在其一端的第一开口，在通过第一开口流到第二内部空间的基板上形成薄膜的源气体，以及包括气体供给口的加压构件，该气体供给口用于通过该第二内部空间供给源气体，第一开口，所述按压部件构造成沿着所述第二容器的长度方向按压所述第二容器，使得所述第二内部空间与所述第一内部空间分离。

6. 发明授权

US09068261B2 Atomic layer deposition apparatus and thin film forming method 有权
标题翻译：原子层沉积装置和薄膜形成方法
公开(公告)号：US09068261B2
公开(公告)日：2015-06-30
申请号：US13203400
申请日：2010-03-03
申请人： Kazutoshi Murata , Yasunari Mori
发明人： Kazutoshi Murata , Yasunari Mori
IPC分类号： C23C16/455 , C23C14/56 , C23C16/458 , C23C16/52 , H01J37/32 , C23C16/50 , C23C16/44 , C23C16/46 , C23C16/54 , C23C16/06 , C23C16/22
CPC分类号： C23C16/45544 , C23C14/56 , C23C14/562 , C23C14/568 , C23C16/4401 , C23C16/4409 , C23C16/45525 , C23C16/45553 , C23C16/46 , C23C16/50 , C23C16/54 , H01J37/32752
摘要： An atomic layer deposition apparatus, which forms a thin film on a substrate, includes a first container that defines a first inner space and includes a substrate carrying-in and carrying-out port and a gas introduction port in different positions, the substrate being carried in and out through the substrate carrying-in and carrying-out port, gas being introduced through the gas introduction port to form the thin film on the substrate, a second container that is provided in the first container to define a second inner space separated from the first inner space, the second container including a first opening, a first moving mechanism that moves the second container in a predetermined direction, and a controller that controls the first moving mechanism such that the second container is moved to a first position where the substrate carrying-in and carrying-out port and the first opening are located opposite each other when the substrate is carried in and out, the controller controlling the first moving mechanism such that the second container is moved to a second position where the gas introduction port and the first opening are located opposite each other when the thin film is formed on the substrate.
摘要翻译：在基板上形成薄膜的原子层沉积装置包括：第一容器，其限定第一内部空间，并且包括基板搬入口和排出口;以及气体导入口，位于不同的位置，所述基板被承载通过所述基板输入和输出端口进出的气体，所述气体通过所述气体引入口引入以在所述基板上形成所述薄膜;第二容器，设置在所述第一容器中，以限定与所述第一内部空间分离的第二内部空间; 所述第一内部空间，所述第二容器包括第一开口，沿预定方向移动所述第二容器的第一移动机构;以及控制器，其控制所述第一移动机构，使得所述第二容器移动到所述第一位置，当输入和输出基板时，输入和输出端口和第一开口彼此相对定位，控制器控制 e第一移动机构，使得当在基板上形成薄膜时，第二容器移动到第二位置，在第二位置，气体导入口和第一开口彼此相对定位。

7. 发明授权

US08098016B2 Plasma generating apparatus and plasma generating method 有权
标题翻译：等离子体发生装置和等离子体产生方法
公开(公告)号：US08098016B2
公开(公告)日：2012-01-17
申请号：US12294531
申请日：2007-03-29
申请人： Yasunari Mori
发明人： Yasunari Mori
IPC分类号： H01J7/24
CPC分类号： H05H1/46 , H01J37/32082 , H01J37/32183
摘要： An impedance matching device is provided with a basic element having variable characteristic parameters for impedance matching, and an auxiliary element having variable characteristic parameters. At the time of generating plasma by using the impedance matching device, the characteristic parameters of the basic element of each antenna element are fixed, respectively, and the characteristic parameters of the auxiliary element are adjusted for each antenna element. Thus, in an adjusted status where impedance matching for each antenna element is adjusted, each antenna element of an antenna array is fed with a high frequency signal, an electromagnetic wave is radiated from the antenna element, the characteristic parameters of the basic element of each antenna element are synchronized and adjusted, and the impedances of the whole antenna array are matched.
摘要翻译：阻抗匹配装置设置有具有用于阻抗匹配的可变特征参数的基本元件和具有可变特征参数的辅助元件。在通过使用阻抗匹配装置产生等离子体时，各天线元件的基本元件的特征参数分别固定，并且为每个天线元件调整辅助元件的特性参数。因此，在调整每个天线元件的阻抗匹配的调整状态下，天线阵列的每个天线元件馈送高频信号，电磁波从天线元件辐射，每个天线元件的基本元件的特征参数天线元件被同步和调整，并且整个天线阵列的阻抗匹配。

8. 发明申请

US20110293853A1 THIN FILM FORMING APPARATUS AND THIN FILM FORMING METHOD 审中-公开
标题翻译：薄膜成型装置和薄膜成型方法
公开(公告)号：US20110293853A1
公开(公告)日：2011-12-01
申请号：US13147878
申请日：2010-01-28
申请人： Kazuki Takizawa , Yasunari Mori , Kazutoshi Murata
发明人： Kazuki Takizawa , Yasunari Mori , Kazutoshi Murata
IPC分类号： C23C16/50 , C23C16/52 , C23C16/455
CPC分类号： C23C16/45544 , C23C16/45536 , C23C16/45557 , C23C16/507 , H01J37/321 , H01J37/3244 , H01J37/32449
摘要： A thin film forming apparatus controls pressures of a first internal space in a deposition vessel and a second internal space provided in the first internal space according to determined pressure conditions, respectively. The apparatus causes a source gas to flow onto a substrate in the second internal space and supplies a high-frequency power to a plasma source provided in the first internal space according to the pressure conditions, thereby generating plasma in the second internal space to form a thin film on the substrate.
摘要翻译：薄膜形成装置分别根据确定的压力条件控制沉积容器中的第一内部空间的压力和设置在第一内部空间中的第二内部空间。该装置使源气体流到第二内部空间中的基板上，并根据压力条件向设置在第一内部空间中的等离子体源提供高频电力，从而在第二内部空间中产生等离子体，形成基材上的薄膜。

9. 发明申请

US20100095888A1 PLASMA GENERATING APPARATUS AND PLASMA FILM FORMING APPARATUS 审中-公开
标题翻译：等离子体生成装置和等离子体膜形成装置
公开(公告)号：US20100095888A1
公开(公告)日：2010-04-22
申请号：US12531264
申请日：2008-03-28
申请人： Yasunari Mori , Kazuki Takizawa
发明人： Yasunari Mori , Kazuki Takizawa
IPC分类号： C23C16/52 , H05H1/46
CPC分类号： H01Q21/0006 , C23C16/509 , H01J37/32082 , H01J37/32183 , H01P5/12 , H01Q1/26 , H05H1/46
摘要： A plasma generating apparatus is provided with an impedance matching member, which is connected to a feeding line that supplies an antenna element with a high frequency signal, and has variable characteristic parameters for impedance matching; a distribution wire, which is arranged corresponding to the impedance matching member and connects the impedance matching member with at least two antenna elements; and a control section which changes at the same time impedance matching statuses of at least the two antenna elements connected to the impedance matching member through the distribution wire by changing the characteristic parameters of the impedance member. Thus, the number of impedance matching devices is smaller than that of the antenna elements, and a mechanism relating to impedance matching is made relatively small.
摘要翻译：等离子体发生装置具有阻抗匹配部件，该阻抗匹配部件连接到向天线元件供给高频信号的馈电线路，并且具有用于阻抗匹配的可变特性参数; 配线，其布置成对应于所述阻抗匹配构件并将所述阻抗匹配构件与至少两个天线元件连接; 以及控制部，其通过改变阻抗部件的特性参数，通过分配线同时改变连接到阻抗匹配部件的至少两个天线元件的阻抗匹配状态。因此，阻抗匹配装置的数量小于天线元件的数量，并且与阻抗匹配有关的机构相对较小。

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