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51. 发明申请

US20100059961A1 TORSION BEAM SUSPENSION 有权
标题翻译：扭转梁悬挂
公开(公告)号：US20100059961A1
公开(公告)日：2010-03-11
申请号：US12521811
申请日：2008-02-13
申请人： Yoshihisa Kato , Yoshiharu Isoshima , Yoshiaki Kadoma
发明人： Yoshihisa Kato , Yoshiharu Isoshima , Yoshiaki Kadoma
IPC分类号： B60G11/20 , B60G9/04
CPC分类号： B60G21/051 , B60B35/08 , B60G7/008 , B60G2200/21 , B60G2200/23 , B60G2200/422 , B60G2200/446 , B60G2202/136 , B60G2204/1246 , B60G2204/43 , B60G2204/4307 , B60G2206/012 , B60G2206/20 , B60G2206/50 , B60G2206/72 , B60G2206/8103 , B60G2206/8201
摘要： A torsion beam type suspension including a torsion beam in which arms are formed by bending both ends of a pipe material and also includes wheel installation members fixed to the arms, respectively. Portions to be inserted of the wheel installation members are inserted into open ends of the arms, and the wheel installation members are welded to the arms. The torsion beam type suspension can be produced at low cost and have high quality.
摘要翻译：一种扭力梁式悬架，包括扭力梁，其中通过弯曲管材的两端形成臂，并且还包括固定到臂的轮安装构件。将车轮安装部件插入的部分插入臂的开放端部，并将车轮安装部件焊接到臂部。扭力梁式悬架可以低成本生产，质量好。

52. 发明申请

US20090055576A1 MEMORY CONTROLLER, NONVOLATILE STORAGE DEVICE, NONVOLATILE STORAGE SYSTEM, AND DATA WRITING METHOD 有权
标题翻译：存储器控制器，非易失存储器件，非易失性存储系统和数据写入方法
公开(公告)号：US20090055576A1
公开(公告)日：2009-02-26
申请号：US11908715
申请日：2006-03-09
申请人： Masahiro Nakanishi , Tomoaki Izumi , Tetsushi Kasahara , Kazuaki Tamura , Kiminori Matsuno , Yutaka Nakamura , Masayuki Toyama , Yasushi Goho , Syunichi Iwanari , Yoshihisa Kato , Manabu Inoue
发明人： Masahiro Nakanishi , Tomoaki Izumi , Tetsushi Kasahara , Kazuaki Tamura , Kiminori Matsuno , Yutaka Nakamura , Masayuki Toyama , Yasushi Goho , Syunichi Iwanari , Yoshihisa Kato , Manabu Inoue
IPC分类号： G06F12/00 , G06F12/02
CPC分类号： G06F3/0656 , G06F3/0613 , G06F3/0619 , G06F3/0643 , G06F3/0679 , G06F12/0246 , G06F2212/1016 , G06F2212/7203
摘要： A nonvolatile storage device is provided with a nonvolatile main storage memory (114) whose erase size is larger than a cluster size, and a buffer (106), i.e. a nonvolatile auxiliary storage memory. At the time of writing data in the memory, the data is temporarily stored in the buffer (106), then, a plurality of data in the buffer (106) are collectively taken out to be stored in the main storage memory (114). Data in an original block is saved in a write block in the main storage memory. Thus, the data can be written in the main storage memory (114) at a high speed.
摘要翻译：非易失性存储装置具有擦除大小大于簇大小的非易失性主存储存储器（114）和缓冲器（106），即非易失性辅助存储存储器。在将数据写入存储器时，将数据临时存储在缓冲器（106）中，然后将缓冲器（106）中的多个数据集中取出以存储在主存储器（114）中。原始块中的数据保存在主存储器中的写入块中。因此，可以高速地将数据写入主存储存储器（114）。

53. 发明申请

US20080304794A1 Optical connector 有权
标题翻译：光连接器
公开(公告)号：US20080304794A1
公开(公告)日：2008-12-11
申请号：US12000896
申请日：2007-12-18
申请人： Yoshihisa Kato , Kanako Suzuki
发明人： Yoshihisa Kato , Kanako Suzuki
IPC分类号： G02B6/36
CPC分类号： G02B6/3846 , G02B6/02314 , G02B6/3806 , G02B6/382 , G02B6/3858
摘要： An optical connector has a ferrule, an optical fiber connector disposed at an back end of the ferrule, an internal optical fiber inserted into the ferrule and the optical fiber connector, the internal optical fiber being adapted to butt-connect at a back end face thereof to an external optical fiber to be inserted into the optical fiber connector, and a refractive index matching body attached to the back end face of the internal optical fiber. The refractive index matching body has a cross-linked and hardened cross-linkable refractive index matching agent including a stress-strain relaxation agent.
摘要翻译：光连接器具有套圈，配置在套圈的后端的光纤连接器，插入套圈的内部光纤和光纤连接器，内部光纤适于在其后端面对接涉及插入到光纤连接器中的外部光纤，以及安装在内部光纤的后端面的折射率匹配体。折射率匹配体具有包含应力 - 应变松弛剂的交联且硬化的可交联折射率匹配剂。

54. 发明授权

US06967859B2 Ferroelectric memory configuration having successively connected ferroelectric capacitor coupling to the gate of a read transistor and different bias voltages applied in read/write/erase 失效
标题翻译：铁电存储器配置具有连续的铁电电容器耦合到读取晶体管的栅极和在读/写/擦除中施加的不同偏置电压
公开(公告)号：US06967859B2
公开(公告)日：2005-11-22
申请号：US10626722
申请日：2003-07-25
申请人： Yoshihisa Kato , Yasuhiro Shimada
发明人： Yoshihisa Kato , Yasuhiro Shimada
IPC分类号： G11C11/22
CPC分类号： G11C11/22 , G11C11/223
摘要： A semiconductor memory of this invention contains a memory cell block including a plurality of ferroelectric capacitors successively connected to one another along a bit line direction each for storing a data in accordance with displacement of polarization of a ferroelectric film thereof, and a reading transistor whose gate is connected to one end of the successively connected plural ferroelectric capacitors for reading a data by detecting the displacement of the polarization of the ferroelectric film of a ferroelectric capacitor selected from the plural ferroelectric capacitors. A set line is connected to the other end of the successively connected plural ferroelectric capacitors. A bit line is connected to the drain of the reading transistor at one end thereof. A reset line is connected to the source of the reading transistor at one end thereof. A plurality of word lines respectively corresponding to the plural ferroelectric capacitors are provided perpendicularly to the bit line, so as to select a ferroelectric capacitor from the plural ferroelectric capacitors for data write or data read.
摘要翻译：本发明的半导体存储器包括存储单元块，该存储单元块包括沿着位线方向依次连接的多个强电介质电容器，每个强电介质电容器用于根据其铁电体膜的极化位移存储数据;以及读取晶体管，其栅极通过检测从多个强电介质电容器中选出的铁电体电容器的铁电体膜的极化位移来连接到连续连接的多个铁电电容器的一端，用于读取数据。设定线连接到连续连接的多个铁电电容器的另一端。位线在其一端连接到读取晶体管的漏极。复位线在其一端连接到读取晶体管的源极。分别对应于多个强电介质电容器的多个字线垂直于位线设置，以从多个用于数据写入或数据读取的强电介质电容器中选择铁电电容器。

55. 发明申请

US20050190597A1 Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20050190597A1
公开(公告)日：2005-09-01
申请号：US11064499
申请日：2005-02-24
申请人： Yoshihisa Kato
发明人： Yoshihisa Kato
IPC分类号： G11C11/22
CPC分类号： G11C11/22
摘要： The semiconductor device of the present invention includes a volatile latch circuit which holds data, a nonvolatile ferroelectric capacitor circuit which holds data, and a switch circuit which connects and disconnects between the latch circuit and the ferroelectric capacitor circuit.
摘要翻译：本发明的半导体器件包括保存数据的易失性锁存电路，保存数据的非易失性铁电电容器电路和连接和断开锁存电路与铁电电容电路的开关电路。

56. 发明申请

US20050184328A1 Semiconductor device and its manufacturing method 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20050184328A1
公开(公告)日：2005-08-25
申请号：US11059451
申请日：2005-02-17
申请人： Kiyoshi Uchiyama , Shintarou Ida , Yasuhiro Shimada , Kazunori Isogai , Yoshihisa Kato
发明人： Kiyoshi Uchiyama , Shintarou Ida , Yasuhiro Shimada , Kazunori Isogai , Yoshihisa Kato
IPC分类号： H01L21/02 , H01L21/8246 , H01L27/108 , H01L27/115
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/56
摘要： In a semiconductor device in which a thin film containing a metal oxide is formed on a semiconductor element, the thin film is an aggregate of crystal particles formed of the metal oxide, and the crystal particles are bonded to each other at a part of its surface.
摘要翻译：在其中在半导体元件上形成含有金属氧化物的薄膜的半导体器件中，薄膜是由金属氧化物形成的晶体颗粒的聚集体，并且晶体颗粒在其表面的一部分彼此结合。

57. 发明申请

US20050162890A1 Ferroelectric storage device 失效
标题翻译：铁电存储设备
公开(公告)号：US20050162890A1
公开(公告)日：2005-07-28
申请号：US11041251
申请日：2005-01-25
申请人： Takayoshi Yamada , Yoshihisa Kato
发明人： Takayoshi Yamada , Yoshihisa Kato
IPC分类号： G11C11/22 , G11C11/56
CPC分类号： G11C11/5657 , G11C11/22
摘要： In the present invention, a polarization having a lower polarization level than a saturation polarization is caused in a ferroelectric capacitor by applying a voltage that is lower than a saturation voltage to the ferroelectric capacitor. This allows a storage device to store many values by changing a length of a write-time during which the voltage is applied to the capacitor.
摘要翻译：在本发明中，通过向铁电电容器施加低于饱和电压的电压，在铁电电容器中产生具有比饱和极化低的极化电平的极化。这允许存储设备通过改变将电压施加到电容器的写入时间的长度来存储许多值。

58. 发明授权

US06898108B2 Semiconductor storage device and method for driving the same 失效
标题翻译：半导体存储装置及其驱动方法
公开(公告)号：US06898108B2
公开(公告)日：2005-05-24
申请号：US10647352
申请日：2003-08-26
申请人： Yoshihisa Kato , Takayoshi Yamada
发明人： Yoshihisa Kato , Takayoshi Yamada
IPC分类号： G11C11/22
CPC分类号： G11C11/22
摘要： In a memory block, for example, included in a semiconductor storage device, memory cells, reset transistors, and gain transistors are provided. The memory block further includes charge transistors for charging the gate potentials of the gain transistors, and current shutoff transistors for disconnecting electrical connection between the gain transistors and bit lines.
摘要翻译：在存储器块中，例如，包括在半导体存储器件中，提供存储单元，复位晶体管和增益晶体管。存储块还包括用于对增益晶体管的栅极电位充电的电荷晶体管，以及用于断开增益晶体管和位线之间的电连接的电流截止晶体管。

59. 发明授权

US06693840B2 Non-volatile semiconductor memory device with enhanced erase/write cycle endurance 失效
标题翻译：具有增强的擦除/写入周期耐久性的非易失性半导体存储器件
公开(公告)号：US06693840B2
公开(公告)日：2004-02-17
申请号：US10271139
申请日：2002-10-15
申请人： Yasuhiro Shimada , Yoshihisa Kato , Takayoshi Yamada
发明人： Yasuhiro Shimada , Yoshihisa Kato , Takayoshi Yamada
IPC分类号： G11C700
CPC分类号： G11C14/00 , G11C16/30
摘要： The power-supply unit, while directing externally supplied power to the control unit and the like, accumulates an amount of power that is required by the control unit to save data from the volatile memory to the non-volatile memory. When an external power supply has started, the control unit restores data of the non-volatile memory in the volatile memory; and when the external power supply has stopped, the control unit saves data from the volatile memory to the non-volatile memory.
摘要翻译：电源单元在向控制单元等引导外部供电的同时，累积控制单元所需的功率量，以将数据从易失性存储器保存到非易失性存储器。当外部电源开始时，控制单元恢复易失性存储器中的非易失性存储器的数据; 并且当外部电源停止时，控制单元将数据从易失性存储器保存到非易失性存储器。

60. 发明授权

US06509594B2 Semiconductor memory device having MFMIS transistor and increased data storage time 失效
标题翻译：具有MFMIS晶体管的半导体存储器件和增加的数据存储时间
公开(公告)号：US06509594B2
公开(公告)日：2003-01-21
申请号：US09874319
申请日：2001-06-06
申请人： Yoshihisa Kato , Yasuhiro Shimada
发明人： Yoshihisa Kato , Yasuhiro Shimada
IPC分类号： H01L31062
CPC分类号： H01L29/516 , H01L27/11502 , H01L29/6684 , H01L29/78391 , H01L51/0504
摘要： The semiconductor memory of this invention includes an MFMIS transistor including a field effect transistor and a ferroelectric capacitor formed above the field effect transistor. The semiconductor memory has a characteristic that a value of (&sgr;−p) is substantially not changed with time in a relational expression, V=(d/&egr;0)×(&sgr;−p), which holds among a potential difference V between an upper electrode and a lower electrode, a surface density of charge &sgr; of a ferroelectric film, polarization charge p of the ferroelectric film, a thickness d of the ferroelectric film and a dielectric constant &egr;0 of vacuum when a data is written in the MFMIS transistor and the ferroelectric film is in a polarized state.
摘要翻译：本发明的半导体存储器包括一个包括场效应晶体管和形成在场效应晶体管之上的铁电电容器的MFMIS晶体管。半导体存储器具有以下关系式中的时间（sigma-p）基本上不随时间变化的特性，V =（d / epsi0）x（sigma-p）），其保持在上电极和下电极，强电介质膜的电荷sigma的表面密度，铁电体膜的极化电荷p，强电介质膜的厚度d和当数据被写入MFMIS晶体管时的真空的介电常数εi0，以及铁电薄膜处于极化状态。

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